Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.

Abstract: An operation method of a controller for controlling a memory device includes: queuing an identifier of a logical address region associated with a read request from a host in a most recently used (MRU) entry of an internal logical address region queue; increasing a weighted value for a read count of the logical address region by a first value according to whether the identifier of the logical address region has been queued in the logical address region queue before being queued in the MRU entry; adding the weighted value to the read count of the logical address region; providing the host with a map segment corresponding to the logical address region according to a threshold of the read count; and controlling a read operation of the memory device based on a physical address according to whether the read request includes the physical address.

Abstract: A method, system for registration of a bone, and a trackable element, used to obtain a mark point information which can be obtained from a certain operation performed by a distal end of a trackable element on a surface of the bone; obtain an image data of the bone through scanning the surface of the bone by a scanning device of the trackable element; and to perform a virtual reconstruction of the surface of the bone according to the obtained mark point information and an image data of the bone which is obtained in advance. As a result, a precise registration of the patient's physical space coordinate system and image space coordinate system can be achieved, during which only one operator is enough for completing the registration. Therefore, operations with high accuracy and convenience are ensured, which can significantly improve the registration efficiency, and the operating experience of operators.

Abstract: The application provides a method, system for registration of a bone, and a trackable element, it is configured to obtain a mark point information which can be obtained from a certain operation performed by a distal end of a trackable element on a surface of the bone when a switch of the trackable element meets a setting condition corresponding to the operation; and to perform a virtual reconstruction of the surface of the bone according to the obtained mark point information and an image data of the bone which is obtained in advance. As a result, a precise registration of the patient's physical space coordinate system and image space coordinate system can be achieved, during which only one operator is enough for completing the registration. Therefore, operations with high accuracy and convenience are ensured, which can significantly improve the registration efficiency, and the operating experience of operators.

Abstract: A semiconductor device includes a substrate, a peripheral circuit layer, a first active pattern, a gate electrode, a first insulating layer, a conductive contact, and a second active pattern. The peripheral circuit layer is disposed on the substrate, and the peripheral circuit layer includes logic transistors and an interconnection layer that is disposed on the logic transistors. The first active pattern is disposed on the peripheral circuit layer. The gate electrode is disposed on a channel region of the first active pattern. The first insulating layer is disposed on the first active pattern and the gate electrode. The conductive contact is disposed in the first insulating layer and is electrically connected to a first source/drain region of the first active pattern, and the second active pattern is disposed on the first insulating layer. The channel region of the second active pattern vertically overlaps with the conductive contact.

Abstract: Disclosed is a dynamic matching method for improving wind power generation efficiency at medium and low wind speeds.

Abstract: The application provides a device, method and system for registration. The registration device includes a fixing member; a frame connected to the fixing member, at least one trackable element mounted on the frame; and a collection device connected to the fixing member, wherein the collection device is configured to simultaneously collect multiple point data from an object to be registered. The registration method includes obtaining simultaneously, by a registration device, a point cloud data from a surface of a cartilage of an object to be registered; and performing surface fitting based on the point cloud data to obtain a fitted surface of the cartilage of the object to be registered. The registration system includes the registration device; a first point cloud data acquisition module, configured to receive the point cloud data from the collection device; and a surface fitting module, configured for surface fitting with the point cloud data.

Abstract: A semiconductor memory device includes a substrate, a first active pattern on the substrate, a gate electrode intersecting a channel region of the first active pattern, a first insulating layer covering the first active pattern and the gate electrode, a contact penetrating the first insulating layer so as to be electrically connected to a first source/drain region of the first active pattern, and a second active pattern on the first insulating layer. A channel region of the second active pattern vertically overlaps with the contact.

Abstract: A converter includes a transformer, an active clamp circuit, a primary side switch, a secondary side switch, a load detection circuit, a state detection circuit and a control circuit. The active clamp circuit is electrically coupled to the primary winding of the transformer, and includes a clamp switch. The primary side switch is electrically coupled to the primary winding and a primary ground terminal. The secondary side switch is electrically coupled to a secondary winding of the transformer and a load. The control circuit outputs a control signal to turn on or turn off the clamp switch. The control circuit sets a blanking time according to the load state signal, such that the clamp switch is turned on when a drain-source voltage of the primary side switch is at a peak value of a resonance after the blanking time starting from the reference time point.

Abstract: Systems and methods are provided for tool-free dismountable furniture. An exemplary system (100) includes a plurality of primary connectors and a plurality of secondary connectors which connect parts of an armchair. The system (100) includes a backrest (104) with a first pair of primary connectors on a top portion and a second pair of primary connectors on a bottom portion. These primary connectors connect to secondary connectors on a rear end of a set of handrails (112,114). The handrails (112,114) also have primary connectors on a front end which connect to secondary connectors on a seat board (102).

Abstract: A conversion device includes a primary side circuit, a secondary side circuit, a transformer, and a control circuit. The primary side circuit includes a primary side switch and is configured to receive an input voltage. The secondary side circuit outputs an output voltage to a load. The transformer comprises a primary winding and a secondary winding, the primary winding is electrically coupled to the primary side circuit and the secondary winding electrically coupled to the secondary side circuit. The control circuit is configured to control a peak value of the current of the primary side switch, to be limited in a band range.

Abstract: A converter includes a transformer, a primary side switch, a load detection circuit, a state detection circuit and a control circuit. The transformer is configured to output a voltage to a load. The primary side switch is coupled to a primary winding and a primary ground terminal. The load detection circuit is configured to detect a load state of the load and output a load state signal. The state detection circuit is configured to detect a reference time point. The control circuit is configured to output a control signal to turn on or off the primary side switch. The control circuit further sets a blanking time according to the load state signal, such that the primary side switch is turned on when a drain-source voltage of the primary side switch is at a valley of the resonance after the blanking time starting from the reference time point.

Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

Abstract: A semiconductor device includes a substrate, an oxide semiconductor film on the substrate, a first gate structure on the oxide semiconductor film and a contact that is in contact with the oxide semiconductor film, the contact being disposed on a boundary surface with the oxide semiconductor film, and including a metal oxide film that includes a transition metal.

Abstract: A semiconductor device includes a channel layer located on a substrate, the channel layer including a conductive oxide, a gate structure located on the channel layer, the gate structure including a gate electrode and gate spacers located on both sidewalls of the gate electrode, and source and drain regions located on both sides of the gate structure in recess regions having a first height from a top surface of the channel layer. The source and drain regions are configured to apply tensile stress to a portion of the channel layer located under the gate structure.

Abstract: A conversion device includes a primary side circuit, a secondary side circuit, a transformer, and a control circuit. The primary side circuit includes a primary side switch and is configured to receive an input voltage. The secondary side circuit outputs an output voltage to a load. The transformer comprises a primary winding and a secondary winding, the primary winding is electrically coupled to the primary side circuit and the secondary winding electrically coupled to the secondary side circuit. The control circuit is configured to control a peak value of the current flowing through the primary side switch, to be limited in a band range.

Abstract: The present disclosure may provide a method for loading a driver during a terminal starting up and a terminal device. The terminal includes at least one component having a driver to be loaded during starting up. The method includes: receiving a startup instruction; reading a component list; determining whether the component list comprises a driver related to a component; and if the component list includes the driver related to the component, loading the related driver. By such means, the present disclosure increases a startup speed and improves user experience.

Abstract: Aspects of the present inventive concept provide a semiconductor device capable of enhancing performance and reliability through source/drain engineering in a transistor including an oxide semiconductor layer. The semiconductor device includes a substrate, a metal oxide layer disposed on the substrate, a source/drain pattern being in contact with the metal oxide layer and including a portion protruding from a top surface of the metal oxide layer, a plurality of gate structures disposed on the metal oxide layer with the source/drain pattern interposed therebetween and each including gate spacers and an insulating material layer, the insulating material layer being in contact with the metal oxide layer, and not extending along a top surface of the source/drain pattern, and a contact disposed on the source/drain pattern, the contact being connected to the source/drain pattern.

Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

Abstract: Disclosed is a dynamic matching method for improving wind power generation efficiency at medium and low wind speeds.