Abstract: A flat bottom ball valve is provided in the present disclosure. According to an example, the flat bottom ball valve includes a valve body, a valve core, a valve rod, a bonnet and a flow path. The valve core is mounted inside the valve body. The valve rod is mounted on two opposite sides of the valve body, perpendicular to a liquid flow direction and capable of driving the valve core to turn over. The bonnet is movably mounted on the valve body and parallel to the valve rod. The flow path is defined inside the valve body and connects two ends of the valve body. The valve core includes a main body part, a connecting part formed by extending symmetrically from two sides of the main body part, an accessory defined on the main body part and a first mounting hole in the connecting part to engage with the valve rod. The valve core swings around the valve rod along a path above the valve rod and is capable of being hermetically engaged with the valve body to turn off/on the flow path.

Abstract: A power adaptor includes a main electric unit, a transformer unit and a bus capacitor unit. The main electric unit is disposed on a first surface. The transformer unit is configured on the main electric unit and disposed on a second surface. The first surface is perpendicular to the second surface. The main electric unit and the transformer unit form a containing space. The bus capacitor unit includes at least one bus capacitor. The bus capacitor unit is disposed in the containing space.

Abstract: A light-emitting diode (LED) chip (2) comprises a substrate (20), an epitaxial structure (21), a transparent conductive layer (22), a passivation protective layer (23), and at least one electrode (25). The epitaxial structure (21) is disposed on the substrate (20). The transparent conductive layer (22) is disposed on the epitaxial structure (21). The transparent conductive layer (22) defines one or more first through holes (220) that extend through the transparent conductive layer (22). The passivation protective layer (23) is disposed on the transparent conductive layer (22). The passivation protective layer (23) defines one or more second through holes (230) that extend through the passivation protective layer (23). The electrode (25) is disposed on the passivation protective layer (23). The electrode (25) electrically connects the transparent conductive layer (11) through the one or more second through holes (230).

Abstract: The present disclosure may provide a method for loading a driver during a terminal starting up and a terminal device. The terminal includes at least one component having a driver to be loaded during starting up. The method includes: receiving a startup instruction; reading a component list; determining whether the component list comprises a driver related to a component; and if the component list includes the driver related to the component, loading the related driver. By such means, the present disclosure increases a startup speed and improves user experience.

Abstract: Systems, methods, and apparatus are disclosed for identifying and analyzing online advertising performance data. Systems may receive data records that include data events characterizing interactions between users and online advertisement campaigns. The online advertising data records may include timestamp data characterizing creation dates for data events. The systems may generate intermediate data objects by partitioning at least some of the online advertising data records based on a first plurality of temporal data categories representing different units of time. Each intermediate data object may be associated with a temporal data category of the first plurality of temporal data categories. The systems may generate performance data objects by partitioning the intermediate data objects based on a second plurality of temporal data categories that are different than the first temporal data categories.

Abstract: A method for manufacturing a semiconductor device with an improved doping profile is provided. The method includes providing a measuring target including a first region having a plurality of layers, inputting a first input signal into the measuring target and measuring a resulting first output signal, such as a change over time of a first output electric field that is transmitted through or reflected by the first region. Based on a first model including first structural information of a plurality of first modeling layers and information on doping concentrations of each of the plurality of first modeling layers, calculating a second output signal. When a result of comparing the first output signal with the second output signal is smaller than a threshold value, a three-dimensional model of the measuring target may be estimated based on the first model.

Abstract: The method for inducing sleep by a sleep inducing system includes acquiring brain signals of a user as sleeping time passes; calculating a functional connectivity value between two channels for each frequency based on the acquired brain signals and performing brain network analysis; determining the stage of sleep of the user based on features of the analyzed brain network; determining a target frequency according to the determined stage of sleep and generating a binaural beat with which the brain signals of the user are induced to the target frequency; combining the generated binaural beat with ASMR information; providing the combined auditory stimulus information to the user; and determining whether the current stage of sleep of the user is maintained at an appropriate proportion with respect to total sleep time, determining whether or not to induce the next stage of sleep, and performing feedback according to the result of determination.

Abstract: A semiconductor device can include a semiconductor substrate and an active region in the semiconductor substrate, where the active region can include an oxide semiconductor material having a variable atomic concentration of oxygen. A first source/drain region can be in the active region, where the first source/drain region can have a first atomic concentration of oxygen in the oxide semiconductor material. A second source/drain region can be in the active region spaced apart from first source/drain region and a channel region can be in the active region between the first source/drain region and the second source/drain region, where the channel region can have a second atomic concentration of oxygen in the oxide semiconductor material that is less than the first atomic concentration of oxygen. A gate electrode can be on the channel region and extend between the first source/drain region and the second source/drain region.

Abstract: A converter includes a transformer, a primary side switch, a load detection circuit, a state detection circuit and a control circuit. The transformer is configured to output a voltage to a load. The primary side switch is coupled to a primary winding and a primary ground terminal. The load detection circuit is configured to detect a load state of the load and output a load state signal. The state detection circuit is configured to detect a reference time point. The control circuit is configured to output a control signal to turn on or off the primary side switch. The control circuit further sets a blanking time according to the load state signal, such that the primary side switch is turned on when a drain-source voltage of the primary side switch is at a valley of the resonance after the blanking time starting from the reference time point.

Abstract: A conversion device includes a primary side circuit, a secondary side circuit, a transformer, and a control circuit. The primary side circuit includes a primary side switch and is configured to receive an input voltage. The secondary side circuit outputs an output voltage to a load. The transformer comprises a primary winding and a secondary winding, the primary winding is electrically coupled to the primary side circuit and the secondary winding electrically coupled to the secondary side circuit. The control circuit is configured to control a peak value of the current flowing through the primary side switch, to be limited in a band range.

Abstract: A hybrid database table is stored as both a row and a column store. One or more techniques may be employed alone or in combination to enhance performance of the hybrid table by regulating access to, and/or the size of, the processing-intensive column store data. For example during an insert operation, the column store data may be searched for a uniqueness violation only after certain filtering and/or boundary conditions have been considered. In another technique, a hybrid table manager may control movement of data to the column store based upon considerations such as frequency of access, or underlying business logic. In still another technique, querying of the hybrid table may result in a search of the column store data only after an initial search of row store data fails to return a result.

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

Abstract: A method for fabricating an optoelectronic device includes forming an adhesion layer on a substrate, forming a material layer on the adhesion layer and applying release tape to the material layer. The substrate is removed at the adhesion layer by mechanically yielding the adhesion layer. A conductive layer is applied to the material layer on a side opposite the release tape to form a transfer substrate. The transfer substrate is transferred to a target substrate to join the target substrate to the conductive layer of the transfer substrate. The release tape is removed from the material layer to form a top emission optoelectronic device.

Abstract: A semiconductor device may include first and second fins formed side by side on a substrate, a first elevated doped region formed on the first fin and having a first doping concentration of impurities, a second elevated doped region formed on the second fin, and a first bridge connecting the first elevated doped region and the second elevated doped region to each other. Methods of manufacturing such a semiconductor device are also disclosed.

Abstract: A battery pack is disclosed. In one aspect, the battery pack includes a chargeable battery and a battery management system (BMS) configured to charge the battery in a plurality of charging periods each including a constant current supply period and a constant voltage supply period. The battery pack also includes a resistance estimator configured to estimate the resistance of the battery. The BMS is further configured to change a charging period of the battery from a constant voltage supply period of an ith charging period to a constant current supply period of an (i+1)th charging period based on the resistance of the battery, and wherein i is a natural number.

Abstract: A hybrid database table is stored as both a row and a column store. One or more techniques may be employed alone or in combination to enhance performance of the hybrid table by regulating access to, and/or the size of, the processing-intensive column store data. For example during an insert operation, the column store data may be searched for a uniqueness violation only after certain filtering and/or boundary conditions have been considered. In another technique, a hybrid table manager may control movement of data to the column store based upon considerations such as frequency of access, or underlying business logic. In still another technique, querying of the hybrid table may result in a search of the column store data only after an initial search of row store data fails to return a result.

Abstract: A semiconductor device and a method of fabricating a semiconductor device, the device including a substrate; an active pattern spaced apart from the substrate and extending in a first direction; and a gate structure on the active pattern and extending in a second direction crossing the first direction, wherein a lower portion of the active pattern extends in the first direction and includes a first lower surface that is sloped with respect to an upper surface of the substrate.

Abstract: A converter includes a transformer, a main switch, an active clamping circuit, a synchronous rectifying switch and a processing circuit. The transformer includes a primary winding and a secondary winding. The main switch is coupled to the primary winding. The active clamping circuit clamps the voltage across the main switch when it is OFF. The active clamping circuit includes an auxiliary switch. The synchronous rectifying switch is coupled to the secondary winding. The processing circuit determines whether the rectifying switch is in a main conducting period or a sub conducting period according to a first voltage signal across the rectifying switch and at least one detecting signal from the converter, and generates a driving signal to control the synchronous rectifying switch accordingly.

Abstract: The present invention relates to an improved food waste dryer utilizing waste heat, which includes a main frame, a dryer drum with an access door, to be positioned in the main frame, and an agitator positioned in the dryer drum. The improved food waste dryer comprises: a waste heat supply unit, a heating jacket positioned on the outer surface of the dryer drum, with a hot-air inlet to receive the waste heat from the waste heat supply unit and a hot-air outlet to discharge the waste heat inside the dryer drum, and a condensation system positioned in the main frame, to remove moisture included in the interior air of the dryer drum to increase the drying efficiency of the food waste dryer utilizing waste heat.

Abstract: A method for manufacturing a semiconductor device and a semiconductor device, the method including forming an active pattern on a substrate such that the active pattern includes sacrificial patterns and semiconductor patterns alternately and repeatedly stacked on the substrate; and forming first spacer patterns at both sides of each of the sacrificial patterns by performing an oxidation process, wherein the first spacer patterns correspond to oxidized portions of each of the sacrificial patterns, wherein the sacrificial patterns include a first semiconductor material containing impurities, wherein the semiconductor patterns include a second semiconductor material different from the first semiconductor material, and wherein the impurities include an element different from semiconductor elements of the first semiconductor material and the second semiconductor material.