Abstract: A method for forming a semiconductor structure is provided. In one form, a method includes: providing a base, a dummy gate structure, a source-drain doped region, and an interlayer dielectric layer; removing the dummy gate structure located at an isolation region to form an isolation opening; performing first ion doping on a fin below the isolation opening, to form an isolation doped region, where a doping type of the isolation doped region is different from a doping type of the source-drain doped region; filling an isolation structure in the isolation opening; removing the remaining dummy gate structure, to form a gate opening; and forming a gate structure in the gate opening.

Abstract: A semiconductor structure includes: a channel protrusion structure, suspended on a base, including channel layers arranged at intervals along a longitudinal direction; a gate structure, spanning the channel protrusion structure and covering part of a top and part of a side wall of the channel protrusion structure, surrounding and covering the channel layers, the gate structure located between adjacent channel layers in the longitudinal direction and between adjacent channel layers and the base serving as an inner gate structure, and the inner gate structure and the adjacent channel layers, and/or, the inner gate structure, the adjacent channel layers and the base forming an inner trench; an inner spacer, located in the inner trench; and a source/drain doped layer, located on the base and connected to two ends of the channel layer, the source/drain doped layer and the inner spacer having a gap therebetween used as an air spacer.

Abstract: A semiconductor structure and its fabrication method. First sacrificial layers are formed on a base substrate. Channel structures are formed on the first sacrificial layers. Each channel structure includes stacked channel stack layer(s). Each channel stack layer includes a second sacrificial layer and a channel layer. Dummy gate structures crossing the channel structures are also formed on the base substrate. Etching resistance of the first sacrificial layers is smaller than etching resistance of the second sacrificial layers. The channel structures and the first sacrificial layers on two sides of each dummy gate structure are removed to form first grooves. The first sacrificial layers at the bottoms of the channel structures are removed to form second grooves connected to the first grooves. Isolation layers are formed in the second grooves; and source-drain doping layers are formed in the first grooves.

Abstract: Semiconductor structure and forming method thereof are provided. The semiconductor structure includes a substrate and a plurality of transistors located over the substrate. A transistor of the plurality of transistors includes: a channel layer parallel to a substrate surface, a gate structure surrounding the channel layer, and a source/drain doped region located on two sides of the gate structure. The source/drain doped region is in contact with the channel layer, and the gate structure is electrically isolated from the source/drain doped region. The semiconductor structure also includes a first metal structure located over the substrate, and a second metal structure located over the first metal structure and the gate structure. The first metal structure is in contact with the source/drain doped region. The first metal structure, the source/drain doped region and the gate structure are arranged along a first direction. The first direction is parallel to the substrate surface.

Abstract: A semiconductor structure includes a substrate, channel layers arranged in parallel along a first direction, gate structures arranged in parallel along a second direction, source doped regions and drain doped regions located on two sides of the gate structures respectively, and a metal layer. The gate structures surround the channel layers, respectively. The first and second directions are parallel to a substrate surface and perpendicular to each other. The source and drain doped regions contact the channel layers, respectively. The metal layer contacts one of the source or drain doped regions. The metal layer, one of the source doped regions, one of the drain doped regions, and one of the gate structures are stacked along the second direction.

Abstract: A semiconductor structure and a formation method of the semiconductor structure are provided in the present disclosure. The semiconductor structure includes a substrate, including a first device region and a second device region; a first device layer on the substrate, where a first transistor at the first device region is in the first device layer; a second device layer on the first device layer, where a second transistor at the second device region is in the second device layer, and projections of the first transistor and the second transistor on a surface of the substrate are non-overlapped with each other; and an electrical interconnection structure in the first device layer and the second device layer, where the electrical interconnection structure is electrically connected to each of the first transistor and the second transistor.

Abstract: A cooking device, which includes: a frame; a base, connected to the frame; a pot assembly, including a pot, the pot being configured to be connected to the base; a first seasoning mechanism, disposed on the frame, the first seasoning mechanism being capable of conveying solid materials into the pot; and a second seasoning mechanism, disposed on the frame, the second seasoning mechanism being capable of conveying liquid materials into the pot. During a cooking process, the cooking device may respectively put the solid materials and the liquid materials into the pot by using the first seasoning mechanism and the second seasoning mechanism, so as to replace manual material feeding. Therefore, the problems in the related art of long cooking time during the using of an automatic cooking machine by a user and poor user experience are solved, thereby improving user experience.

Abstract: A semiconductor structure includes a plurality of composite layers formed on a portion of a substrate. An interlayer dielectric layer is formed on the substrate and the plurality of composite layers. A first gate trench is formed on the interlayer dielectric layer, and a gate sidewall is formed on a side surface of the first gate trench. The composite layer includes stacked channel layers and a second gate trench between neighboring channel layers. The first gate trench and the gate sidewall cross over a portion of a sidewall and a portion of a top surface of the composite layer, and the first gate trench communicates with the second gate trench. A gate is formed in the first and second gate trenches. The doping region is formed in a channel layer. The source-drain layer is formed in the composite layer on two sides of the gate structure.

Abstract: The present disclosure provides Diels-Alder adducts of chalcone and prenylphenyl moieties capable of modulating the activity of cannabinoid receptors, and to oligomers of flavan-3-ol capable of modulating fat absorption and storage. Such Diels-Alder adducts of chalcone and prenylphenyl moieties or oligomers of flavan-3-ol can optionally be used in combination with other weight management agents, such as anorectic agents, a lipase inhibitors, other cannabinoid receptor modulators, psychotropic agents, insulin sensitizers, stimulants, or satiety agents, as well as to methods of use thereof such as treating or preventing weight gain or obesity, promoting weight loss, appetite suppression, modifying satiety, or the like.

Abstract: Semiconductor structure and formation method are provided. A method of forming a semiconductor structure includes providing a dielectric layer on a substrate, the dielectric layer including a first region and a second region under the first region, the first region including discrete first initial nanowires, and the second region including discrete second initial nanowires; etching the dielectric layer and the first initial nanowires in the first region to form a first opening in the first region, and forming first nanowires from the first initial nanowires; etching the dielectric layer at a bottom of the first opening and the second initial nanowires to form a second opening in the second region, and forming second nanowires from the second initial nanowires; forming a second source/drain layer in the second opening; forming an isolation layer on the second source/drain layer; and forming a first source/drain layer in the first opening.

Abstract: Semiconductor structures and methods for forming the same are provided.

Abstract: A semiconductor structure and a method for forming the same are provided.

Abstract: An authorized access list generation method including: at least one network service providing device registering for an authorized access list notification service with a server, the authorized access list including at least one authorization related record of at least one legitimate user device; the legitimate user device outputting a user ID to the server to log into the server, and directly sending an access request to a target network service provider after logging into the server, and continuing to provide an IP address being used and a device ID to the server to update a corresponding authorization related record; and the target network service providing device comparing the IP address, stored in each authorization related record of the authorized access list, with the IP address of a user device issuing an access request, and rejecting the access request if no matched result is found.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes a substrate, having a plurality of fins on a surface of the substrate; a gate structure across the plurality of fins. The gate structure is located on a portion of a top surface and sidewall surfaces of the plurality of fins. The gate structure includes a first region and a second region on the first region. A bottom boundary of the second region is higher than the top surface of the plurality of fins. A size of the first region in an extending direction of the plurality of fins is smaller than a size of the second region in the extending direction of the plurality of fins.

Abstract: The present disclosure discloses a shoulder joint prosthesis containing zirconium-niobium alloy on oxidation layer and a preparation method thereof, the preparation method comprises: using zirconium-niobium alloy powder as a raw material, conducting a 3D printing for one-piece molding to obtain an intermediate products of the humeral handle with articular surface and the scapular glenoid plate, and performing Sinter-HIP, cryogenic cooling and surface oxidation to obtain humeral handle with articular surface and scapular glenoid plate. The prosthesis comprises a humeral handle, an articular surface, a humeral head and a scapular glenoid plate, a bone trabeculae is arranged on the outer surface of the upper part of the humeral handle, the upper surface of the scapular glenoid plate and the outer surface of the circular pipe with internal thread.

Abstract: A semiconductor structure and a forming method therefor are provided. The forming method includes: providing a base, a gate structure, a source/drain doped area, and a bottom dielectric layer; forming a source/drain interconnect layer running through the bottom dielectric layer on a top of the source/drain doped area; forming a top dielectric layer on the bottom dielectric layer; forming a gate contact running through the top dielectric layer on a top of the gate structure and a source/drain contact running through the top dielectric layer on a top of the source/drain interconnect layer; forming a sacrificial side wall layer on side walls of the gate contact and the source/drain contact; forming a gate plug filling the gate contact and a source/drain plug filling the source/drain contact; removing the sacrificial side wall layer to form a first gap; and forming a sealing layer sealing the first gap.

Abstract: Semiconductor structures and forming methods are disclosed. One form of a method includes: forming mask spacers on a base; patterning a target layer using the mask spacers as masks, to form discrete initial pattern layers, where the initial pattern layers extend along a lateral direction and grooves are formed between a longitudinal adjacent initial pattern layers; forming boundary defining grooves that penetrate through the initial pattern layers located at boundary positions of the target areas and cutting areas along the lateral direction; forming spacing layers filled into the grooves and the boundary defining grooves; and using the spacing layers located in boundary defining grooves and the spacing layers located in the grooves as stop layers along the lateral and the longitudinal directions respectively, etching the initial pattern layers located in the cutting areas, and using the remaining initial pattern layers located in the target areas as the target pattern layers.

Abstract: A semiconductor structure and a forming method thereof are provided. The method includes: providing a substrate, a dummy spacer being formed on a side wall of the gate structure, a contact etch stop layer being formed on a side wall of the dummy spacer, and a source/drain doped area being formed in the substrate on two sides of the gate structure; forming a sacrificial dielectric layer above tops of the source/drain doped area and the gate structure; forming a source/drain plug running through the sacrificial dielectric layer; etching the sacrificial dielectric layer until a top of the dummy spacer is exposed; removing, after the top of the dummy spacer is exposed, the dummy spacer to form a gap between the contact etch stop layer and the side wall of the gate structure; and forming a top dielectric layer filling between the source/drain plugs.

Abstract: An integrated binocular augmented reality smart glass, which comprises an integrated structure of glass temples, an imaging system, a nose pad, a battery module and a glass frame, and a circuit board processor module and a control system are integrated therein. The integrated binocular augmented reality smart glass has a small volume, a light weight and a strong mobile flexibility and is convenient in usage and interaction, and can be worn stably for a long time under various application scenarios without generating discomfort. The imaging system of the integrated binocular augmented reality smart glass is a multi-layer structure, and comprises filter glasses, display glasses and functional glasses, where the filter glasses and the functional glasses are respectively located at two sides of the display glasses and are mounted on the glass frame.

Abstract: Provided is a surface-treated implant structure. The implant structure according to an aspect includes a fixture acting as an artificial tooth root, and the nano-protrusions included in the outer peripheral surface of the fixture exhibit a certain level of height, depth, and aspect ratio.