Abstract: The present invention relates to a composition for improvement of female menopausal (climacteric) disorders, comprising as an active ingredient a combination of a red clover extract and a hops extract, more specifically a food composition for improvement of women's menopausal disorders or a pharmaceutical composition for prevention or treatment of women's menopausal disorders, comprising as an active ingredient a combination of a red clover extract and a hops extract; and a method for preparing said composition for improvement of women's menopausal disorders.

Abstract: A method of forming a method of forming a semiconductor device includes providing a semiconductor structure, etching back each gate structure of a plurality of gate structures to form an opening, forming a barrier layer over the dielectric layer, forming a sacrificial layer over the barrier layer, planarizing the sacrificial layer till a surface of the sacrificial layer is substantially flat, and using a gas cluster ion beam (GCIB) process to planarize the sacrificial layer and the barrier layer, and to remove the sacrificial layer and to provide a planarized barrier layer. The semiconductor structure includes a semiconductor substrate, a fin, the plurality of gate structures, and a dielectric layer over the semiconductor substrate between adjacent gate structures. A top of the dielectric layer is coplanar with a top of each of the plurality of gate structures.

Abstract: A semiconductor device and its fabrication method are provided. The method includes forming a core layer on a first region of a base substrate layer; forming sidewall spacer layers on sidewalls of two sides of the core layer along a first direction; forming a filling layer on a second region between adjacent sidewall spacer layers which are arranged along the first direction; forming a first dividing trench in the filling layer on the second region to divide the filling layer along a second direction, where sidewalls of the first dividing trench, arranged along the first direction, expose corresponding sidewall spacer layers; forming a second dividing trench in the core layer to divide the core layer along the second direction; forming a second dividing layer in the second dividing trench when forming a first dividing layer in the first dividing trench; and removing the filling layer and the core layer.

Abstract: The present invention relates to a locking mechanism for a press head, and an electronic device testing apparatus comprising the same, wherein a slider and a locking pin are disposed on the press head and a test socket substrate, respectively. When the press head is moved and engaged with the test socket substrate, an actuator drives the slider to secure the locking pin, so as to secure the press head and the test socket substrate and prevent the press head and the test socket substrate from being separated from each other. The mechanism is simple in construction, easy to install and maintain, reliable, and can be integrated into the support arms, and occupies a relatively small space. Energy is consumed only when the actuator is actuated to effect locking or unlocking. That is, only when the slider is driven and moved, energy is consumed. No extra energy is needed to persistently press down or drive the locking mechanism.

Abstract: The present disclosure provides a train turn-back control method, device and system. The method includes: determining first state information of a train when confirming that a turn-back instruction is received; directly resetting the first state information to obtain second state information; and performing turn-back control on the train according to the second state information. The present disclosure can realize turn-back control on the train based on a single set of vehicle on-board-device, thereby improving the turn-back success rate and turn-back efficiency of the train, and reducing the hardware consumption.

Abstract: The present disclosure provides mixtures of prenylated flavonoids, stilbenes, or both with flavans or curcuminoids or both capable of modulating joint inflammation, joint pain, joint stiffness, cartilage degradation, or improving mobility, range of motion, flexibility, joint physical function, or any combination thereof. Such a mixture of prenylated flavonoids, stilbenes, or both with flavans or curcuminoids or both can optionally be used in combination with other joint management agents, such as non-steroidal anti-inflammatory agents/analgesics, COX/LOX inhibiting agents, glucosamine compounds, neuropathic pain relief agents, or the like.

Abstract: The present invention relates to a locking mechanism for a press head, and an electronic device testing apparatus comprising the same, wherein a slider and a locking pin are disposed on the press head and a test socket substrate, respectively. When the press head is moved and engaged with the test socket substrate, an actuator drives the slider to secure the locking pin, so as to secure the press head and the test socket substrate and prevent the press head and the test socket substrate from being separated from each other. The mechanism is simple in construction, easy to install and maintain, reliable, and can be integrated into the support arms, and occupies a relatively small space. Energy is consumed only when the actuator is actuated to effect locking or unlocking. That is, only when the slider is driven and moved, energy is consumed. No extra energy is needed to persistently press down or drive the locking mechanism.

Abstract: A process for the preparation of amino alcohols includes condensing a compound of Formula (II), a stereoisomer, a tautomer, or a salt thereof with a compound of Formula (IIIa) or Formula (IIIb), a stereoisomer, a tautomer, or a salt thereof to form a condensation product; hydroxylating or acyloxylating the condensation product in the presence of an oxidant to obtain a hydroxylation or acyloxylation product; and subjecting the hydroxylation or acyloxylation product to one or more subsequent reactions comprising a hydrolysis reaction, alcohol deprotection, an amino lysis reaction, or a combination of two or more thereof to obtain an amino alcohol of Formula (I).

Abstract: An intelligent wearable device, and a work assistance method and system based thereon. The intelligent wearable device comprises: a control unit (11) for controlling the intelligent wearable device; a display unit (12) for displaying information for assisting working; a storage unit (13) for storing various pieces of data information during a working process; and a positioning and tracking unit (14) for respectively positioning and tracking an operator and an operation object, and notifying the operator of the positioned and tracked information.

Abstract: The present disclosure provides a method for forming a semiconductor structure. The method includes providing a to-be-etched layer; forming a plurality of initial sidewall spacers on the to-be-etched layer; and performing at least one modification treatment process on the plurality of initial sidewall spacers to form a plurality of sidewall spacers. Each of the at least one modification treatment process includes modifying the plurality of initial sidewall spacers to form a transition layer on the top and sidewall surfaces of each initial sidewall spacer of the plurality of initial sidewall spacers, and then removing the transition layer.

Abstract: A semiconductor structure and a method for forming the semiconductor structure are provided. The method includes providing a to-be-etched layer; forming an initial mask layer over the to-be-etched layer; forming a patterned structure, on the initial mask layer and exposing a portion of the initial mask layer; forming a barrier layer on a sidewall surface of the patterned structure; using the patterned structure and the barrier layer as a mask, performing an ion doping process on the initial mask layer to form a doped region and an un-doped region between doped regions in the initial mask layer; removing the patterned structure and the barrier layer; and forming a mask layer on a top surface of the to-be-etched layer by removing the un-doped region. The mask layer includes a first opening exposing the top surface of the to-be-etched layer.

Abstract: A method for forming a semiconductor structure includes providing a substrate; forming a gate structure on the substrate, the gate structure extending along a first direction; removing a portion of the gate structure to form a trench in the gate structure, the trench penetrating through the gate structure along a second direction which is different form the first direction; performing a first cleaning treatment process on the trench to remove non-metal residues; and performing a second cleaning treatment process on the trench to remove metal residues.

Abstract: A method of forming a semiconductor structure includes providing a to-be-etched layer, forming a core layer over the to-be-etched layer, the core layer including a first trench extending along a first direction, forming a sidewall spacer layer on a top surface of the core layer and on sidewalls and a bottom surface of the first trench, forming a block cut structure in the first trench after forming the sidewall spacer layer, and after forming the block cut structure, etching back the sidewall spacer layer until exposing the top surface of the core layer, thereby leaving a sidewall spacer on the sidewalls of the first trench. The block cut structure extends through the first trench along a second direction. The second direction and the first direction are different. The block cut structure includes a first block-cut layer and a second block-cut layer.

Abstract: A method of forming a method of forming a semiconductor device includes providing a semiconductor structure, etching back each gate structure of a plurality of gate structures to form an opening, forming a barrier layer over the dielectric layer, forming a sacrificial layer over the barrier layer, planarizing the sacrificial layer till a surface of the sacrificial layer is substantially flat, and using a gas cluster ion beam (GCIB) process to planarize the sacrificial layer and the barrier layer, and to remove the sacrificial layer and to provide a planarized barrier layer. The semiconductor structure includes a semiconductor substrate, a fin, the plurality of gate structures, and a dielectric layer over the semiconductor substrate between adjacent gate structures. A top of the dielectric layer is coplanar with a top of each of the plurality of gate structures.

Abstract: A semiconductor device and its fabrication method are provided. The method includes forming a core layer on a first region of a base substrate layer; forming sidewall spacer layers on sidewalls of two sides of the core layer along a first direction; forming a filling layer on a second region between adjacent sidewall spacer layers which are arranged along the first direction; forming a first dividing trench in the filling layer on the second region to divide the filling layer along a second direction, where sidewalls of the first dividing trench, arranged along the first direction, expose corresponding sidewall spacer layers; forming a second dividing trench in the core layer to divide the core layer along the second direction; forming a second dividing layer in the second dividing trench when forming a first dividing layer in the first dividing trench; and removing the filling layer and the core layer.

Abstract: The method prevents or inhibits, during a heating process, burning in a food heating device (20) of a flowable food substance against a heating surface (6) delimiting or contained in a device's cavity (21) that contains the food substance. The heating device comprises an agitator (4) movable in the cavity (21). The method includes the steps of: introducing the flowable food substance into the cavity (21); heating the heating surface (6) and moving the agitator (4) at an agitator speed (41,42) to generate in the cavity (21) a flow of the food substance over the heating surface (6) and in contact therewith; and disturbing the flow of the food substance to break and/or causing asymmetric flow of the food substance in the cavity (21).

Abstract: The present disclosure provides a semiconductor device and a fabrication method. The method includes: providing a substrate having fins and forming an initial gate structure across the fins, which covers a portion of a top surface and sidewall surfaces of the fins, and includes an initial first region and an initial second region on the initial first region. A bottom boundary of the initial second region is higher than the top surface of the fins, and a size of the initial first region is larger than a size of the initial second region. A first etching process is performed on sidewalls of the initial gate structure to form a gate structure, which includes a first region formed by etching the initial first region, and a second region formed by etching the initial second region. A size of the first region is smaller than a size of the second region.

Abstract: The present disclosure provides a mixture of sugar apple and rosemary extracts, optionally in combination with prickly ash extract, for use as skin care compositions.

Abstract: The present disclosure provides a train turn-back control method, device and system. The method includes: determining first state information of a train when confirming that a turn-back instruction is received; directly resetting the first state information to obtain second state information; and performing turn-back control on the train according to the second state information. The present disclosure can realize turn-back control on the train based on a single set of vehicle on-board-device, thereby improving the turn-back success rate and turn-back efficiency of the train, and reducing the hardware consumption.