Patents by Inventor Bo-Sung Kim

Bo-Sung Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 7639337
    Abstract: A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.
    Type: Grant
    Filed: January 12, 2009
    Date of Patent: December 29, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joong-Hyun Mun, Jang-Kun Song, Yong-Woo Choi, Bo-Sung Kim, Kwan-Wook Jung, Jung-Ho Lee, Hyo-Rak Nam
  • Patent number: 7638358
    Abstract: According to an embodiment of the present invention, a manufacturing method of a display device includes forming a plurality of gate wires comprising a gate electrode on an insulating substrate, forming an electrode layer comprising a source electrode and a drain electrode spaced apart from each other to define a channel region on the gate electrode interposed therebetween, forming a first barrier wall having a first opening for exposing the channel region, a portion of the source electrode, and a portion of the drain electrode on the electrode layer where the first barrier wall has a surface, forming a shielding film to cover the channel region inside the first opening, treating the surface of the first barrier wall, removing the shielding film, and forming an organic semiconductor layer inside the first opening.
    Type: Grant
    Filed: November 17, 2006
    Date of Patent: December 29, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joon-hak Oh, Mun-pyo Hong, Bo-sung Kim, Yong-uk Lee
  • Patent number: 7638800
    Abstract: First, a Cr film and a CrOx film are deposited and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a gate wire including a plurality of gate lines, a plurality of gate electrodes and a plurality of gate pads. Next, a gate insulating film, a semiconductor layer and an ohmic contact layer are formed in sequence. A Cr film and CrOx film are deposited in sequence and patterned using an etchant including 8-12% Ce(NH4)2(NO3)6, 10-20% NH3 and remaining ultra pure water to form a data wire including a plurality of data lines, a plurality of source electrodes, a plurality of drain electrodes and a plurality of data pads. A passivation layer is deposited and patterned to form a plurality of contact holes respectively exposing the drain electrodes, the gate pads and the data pads.
    Type: Grant
    Filed: July 29, 2002
    Date of Patent: December 29, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Seung-Hee Yu, Mun-Pyo Hong, Soo-Guy Rho, Nam-Seok Rho, Keun-Kyu Song, Hee-Hwan Choe, Bo-Sung Kim, Sang-Gab Kim, Sung-Chul Kang, Hong-Sick Park
  • Publication number: 20090317942
    Abstract: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
    Type: Application
    Filed: September 3, 2009
    Publication date: December 24, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Bo-sung KIM, Soo-jin KIM, Young-min KIM, Keun-kyu SONG, Yong-uk LEE, Mun-pyo HONG, Tae-young CHOI, Joon-hak OH
  • Patent number: 7619245
    Abstract: The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.
    Type: Grant
    Filed: August 1, 2006
    Date of Patent: November 17, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bo-sung Kim, Joon-hak Oh, Yong-uk Lee
  • Patent number: 7619608
    Abstract: An electrophoretic display (EPD) shows a high contrast and a color display. The EPD blocks a channel of a thin film transistor from an incident light in order to prevent a current leakage. The color display may also include a white, black, red, green, blue, yellow, cyan, magenta or other color pigment in a micro-capsule.
    Type: Grant
    Filed: April 22, 2004
    Date of Patent: November 17, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Yong-Uk Lee, Bo-Sung Kim, Mun-Pyo Hong
  • Patent number: 7605395
    Abstract: A thin film transistor substrate includes an insulating substrate, a gate electrode formed on the insulating substrate, a first gate insulating film formed on the gate electrode and having an opening for exposing at least part of the gate electrode, a second gate insulating film covering the gate electrode exposed by the opening and having a larger dielectric constant than the first gate insulating film, a source electrode and a drain electrode disposed apart from each other in a central area of the second gate insulating film and defining a channel region there between, and an organic semiconductor layer formed in the channel region. A method for forming the TFT substrate is also provided. Thus, the present invention provides a TFT substrate in which a characteristic of a TFT is improved.
    Type: Grant
    Filed: May 12, 2006
    Date of Patent: October 20, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Keun-kyu Song, Yong-uk Lee, Mun-pyo Hong, Tae-young Choi, Joon-hak Oh, Bo-sung Kim, Soo-jin Kim, Young-min Kim
  • Patent number: 7582903
    Abstract: A thin film transistor array panel according to the present invention includes: an insulating substrate; a gate wire formed on the insulating substrate and including a plurality of gate portions and a gate connection connecting the gate portions; a data wire insulated from the gate wire and intersecting the date wire; a thin film transistor connected to the gate wire and the data wire; and a pixel electrode connected to the thin film transitor.
    Type: Grant
    Filed: March 4, 2003
    Date of Patent: September 1, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Mun-Pyo Hong, Yong-Uk Lee, Bo-Sung Kim
  • Patent number: 7572667
    Abstract: A method of forming an organic semiconductor pattern is provided. A pattern is formed on a first substrate. An adhesive is coated on the pattern to form an adhesive pattern. An organic semiconductor layer is formed on a second substrate. The second substrate is combined with the first substrate to remove a portion of the organic semiconductor layer attached to the pattern from the second substrate to form the organic semiconductor pattern.
    Type: Grant
    Filed: January 20, 2006
    Date of Patent: August 11, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Min-Seong Ryu, Bo-Sung Kim, Yong-Uk Lee
  • Publication number: 20090180044
    Abstract: A thin film transistor substrate includes a gate line arranged on a substrate, a data line arranged to cross the gate line, an organic thin film transistor including a gate electrode connected to the gate line, a source electrode connected to the data line, a drain electrode spaced apart from the source electrode, and an organic semiconductor layer forming a channel between the source electrode and the drain electrode, a pixel electrode connected to the drain electrode, and an organic passivation layer to protect the organic semiconductor layer and to receive a white light and transmit a colored light.
    Type: Application
    Filed: November 26, 2008
    Publication date: July 16, 2009
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Young-Min KIM, Bo-Sung Kim, Jung-Han Shin, Tae-Young Choi, Bo-Kyoung Ahn
  • Patent number: 7538342
    Abstract: The invention provides a flat panel display having an insulating substrate; a data line formed on the insulating substrate; an interlayer insulating film formed on the data line having a first contact opening exposing the data line; a connecting member formed in a part of the first contact opening; an interlayer insulating film around the first contact opening; a gate insulating film formed on the connecting member having a second contact opening exposing the connecting member; and an organic semiconductor layer formed on the gate insulating film.
    Type: Grant
    Filed: July 14, 2006
    Date of Patent: May 26, 2009
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Tae-young Choi, Bo-sung Kim, Keun-kyu Song, Mun-pyo Hong
  • Publication number: 20090128725
    Abstract: A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.
    Type: Application
    Filed: January 12, 2009
    Publication date: May 21, 2009
    Inventors: Joong-Hyun Mun, Jang-Kun Song, Yong-Woo Choi, Bo-Sung Kim, Kwan-Wook Jung, Jung-Ho Lee, Hyo-Rak Nam
  • Publication number: 20090111211
    Abstract: The present disclosure relates to a display device comprising an insulating substrate; a source electrode and a drain electrode on the insulating substrate and separated by a channel area; an organic semiconductor layer formed in the channel area and on at least a portion of the source electrode and at least a portion of the drain electrode; and a self-assembly monolayer having a first portion disposed between the organic semiconductor layer and the source electrode and a second portion disposed between the organic semiconductor layer and the drain electrode to reduce contact resistance between the electrodes and the organic semiconductor layer. Thus, embodiments of present invention provide a display device including a TFT that is enhanced in its performance.
    Type: Application
    Filed: December 1, 2008
    Publication date: April 30, 2009
    Inventors: Bo-Sung KIM, Joon-hak Oh, Yoag-uk Lee
  • Patent number: 7525621
    Abstract: A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.
    Type: Grant
    Filed: November 30, 2005
    Date of Patent: April 28, 2009
    Assignee: Samsung Electronics, Co., Ltd.
    Inventors: Joong-Hyun Mun, Jang-Kun Song, Yong-Woo Choi, Bo-Sung Kim, Kwan-Wook Jung, Jung-Ho Lee, Hyo-Rak Nam
  • Publication number: 20090096949
    Abstract: A thin film transistor array panel includes an insulating substrate, a first conductive layer disposed on the insulating substrate, an organic semiconductor disposed between the source electrode and the drain electrode, a gate insulating layer disposed on the organic semiconductor, and a second conductive layer disposed on the gate insulating layer. The first conductive layer includes a data line, a source electrode connected to the data line, a drain electrode spaced apart from the source electrode, and a pixel electrode connected to the drain electrode and formed of the same layer as the drain electrode, and the second conductive layer includes a gate line and a gate electrode connected to the gate line.
    Type: Application
    Filed: August 7, 2008
    Publication date: April 16, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Seung-hwan CHO, Bo-sung KIM, Keun- Kyu SONG, Jung-hun NOH
  • Publication number: 20090072228
    Abstract: An organic thin film transistor substrate includes a gate electrode formed on a substrate, a gate insulation layer formed on the gate electrode to have a source-connecting portion and a drain-seating groove, a source electrode formed in the source-connecting portion, a drain electrode formed in the drain-seating groove and an organic semiconductor layer contacting the gate insulation layer, the source electrode and the drain electrode.
    Type: Application
    Filed: August 14, 2008
    Publication date: March 19, 2009
    Inventors: Tae-Young CHOI, Seong-Sik Shin, Bo-Sung Kim
  • Publication number: 20090054097
    Abstract: In a Push-To-Talk (PTT) communication method, during a PTT conversation between multiple mobile terminals in a PTT chat-room, a first mobile terminal specifies a second mobile terminal as a target for a forced leave and makes a request to a PTT server for a forced leave of the second mobile terminal. The PTT server forces the second mobile terminal to leave the PTT chat-room. During a PTT chat-room conversation, a disruptive member can be forced to leave the PTT chat room and is not allowed to later re-join the PTT chat room. Thus, it is possible to more smoothly run a PTT chat room in a manner fitting for the purpose, enhancing user convenience.
    Type: Application
    Filed: July 10, 2008
    Publication date: February 26, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Bo Sung KIM, Seung Woo Park, Chang Hyun Chun
  • Patent number: 7486364
    Abstract: A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.
    Type: Grant
    Filed: May 10, 2007
    Date of Patent: February 3, 2009
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Joong-Hyun Mun, Jang-Kun Song, Yong-Woo Choi, Bo-Sung Kim, Kwan-Wook Jung, Jung-Ho Lee, Hyo-Rak Nam
  • Publication number: 20090026575
    Abstract: Provided are a semiconductor device which substantially prevents repair failure and a method of manufacturing the same. The semiconductor device includes a plurality of first fuses formed apart from each other on a semiconductor substrate, and on which a protective layer is formed; a first insulating layer filled in between the first fuses and configured to expose the protective layer; a plurality of second fuses formed between the first fuses and on the first insulating layer; and a second insulating layer formed on the first insulating layer, wherein the second insulating layer includes a fuse window configured to fully expose the second fuses and the protective layer formed on the first fuses.
    Type: Application
    Filed: October 1, 2008
    Publication date: January 29, 2009
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventor: Bo-sung Kim
  • Publication number: 20080296566
    Abstract: An organic thin film transistor substrate for a display device includes a gate line, a data line insulated from the gate line, at least two organic thin film transistors, each of which is connected between the gate line and the data line, and both of which are commonly connected to a main drain electrode, and a pixel electrode connected to the main drain electrode.
    Type: Application
    Filed: May 30, 2008
    Publication date: December 4, 2008
    Inventors: Keun-Kyu Song, Jung-Han Shin, Bo-Sung Kim, Seon-Pil Jang, Seung-Hwan Cho, Min-Ho Yoon, Jung-Hun Noh