Abstract: A liquid crystal display includes first and second substrates. The first substrate has a first insulating substrate, and a pixel electrode formed on the first insulating substrate with a first opening pattern. The second substrate has a second insulating substrate, and a common electrode formed on the second insulating substrate with a second opening pattern. The first and the second opening patterns proceed parallel to each other while being arranged in an alternate manner. A liquid crystal material is injected between the first and the second substrates. A spacer is positioned at an end of the second opening pattern to maintain the distance between the first and the second substrates.

Abstract: The present invention provides a thin film transistor comprising: a substrate (110); a gate electrode (124) formed on the substrate; a gate insulating layer (140) covering the substrate and the gate electrode; a source electrode and a drain electrode (173, 175) formed on the gate insulating layer; a semiconductor layer (150) formed on the gate insulating layer, the source electrode and the drain electrode; and a passivation layer (180) covering the semiconductor layer, the source electrode, the drain electrode and the gate insulating layer, wherein at least one of the gate insulating layer and the passivation layer is made of Parylene.

Abstract: Provided are a semiconductor device which substantially prevents repair failure and a method of manufacturing the same. The semiconductor device includes a plurality of first fuses formed apart from each other on a semiconductor substrate, and on which a protective layer is formed; a first insulating layer filled in between the first fuses and configured to expose the protective layer; a plurality of second fuses formed between the first fuses and on the first insulating layer; and a second insulating layer formed on the first insulating layer, wherein the second insulating layer includes a fuse window configured to fully expose the second fuses and the protective layer formed on the first fuses.

Abstract: A method for manufacturing an organic thin film transistor substrate comprising forming a gate electrode on a substrate, forming a gate insulating layer on the gate electrode, defining a channel region on the gate insulating layer between a source electrode and a drain electrode, neutralizing the channel region, forming a bank insulating layer on the source electrode and the drain electrode, and forming an organic semiconductor layer in a region prepared by the bank insulating layer.

Abstract: A method for a thin film transistor array panel includes forming a gate line and a pixel electrode on a substrate, forming a gate insulating layer covering the gate line, forming a data line including a source electrode and a drain electrode on the gate insulating layer, forming an interlayer insulating layer covering the data line and the drain electrode on the gate insulating layer, forming a first opening in the interlayer insulating layer, forming an organic semiconductor in the first opening, forming a passivation layer on the organic semiconductor and the interlayer insulating layer, and forming a second opening in the interlayer insulating layer to expose the pixel electrode.

Abstract: A method of manufacturing a thin film transistor panel is provided, which includes forming a first signal line on a substrate. The method also includes forming in sequence a first insulating layer and a semiconductor layer on the first signal line. The method further includes patterning the semiconductor layer and the first insulating layer through one photolithography process to form a patterned semiconductor layer and a patterned first insulating layer. The method also includes forming a second signal line on the patterned semiconductor layer and the patterned first insulating layer.

Abstract: A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mas, removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes and forming second wire connected to the firs wire via the contact holes.

Abstract: An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.

Abstract: An elecotrophoretic display device includes a first substrate, a gate line formed on the first substrate, a data line crossing the gate line to form a defined area, a source electrode connected to the data line, a drain electrode facing the source electrode to define a channel area, a color filter formed on the first substrate, a first electrode formed on the color filter, the first electrode electrically connected to the drain electrode, a second substrate facing the first substrate, a second electrode formed on the second substrate and a fluid and a plurality of charged particles interposed between the first electrode and the second electrode.

Abstract: A method for manufacturing a semiconductor device including forming a first wire on a substrate, forming a lower film on the first wire, forming a photosensitive pattern on the lower film using a photosensitive material, forming contact holes for exposing the first wire by etching the lower film using the photosensitive film as an etching mas, removing part of the photosensitive film pattern by an ashing process to expose a borderline of the lower film defining the contact holes and forming second wire connected to the firs wire via the contact holes.

Abstract: A display substrate includes an insulation substrate, a gate line formed on the insulation substrate, a data line formed on the insulation substrate and crossing the gate line, a switching element formed on the insulation substrate and electrically connected to the gate line and the data line, and a pixel electrode formed on the insulation substrate. The pixel electrode is electrically connected to the switching element and includes a reflective electrode layer which reflects light and an absorption electrode layer which absorbs light.

Abstract: A manufacturing method for a thin film transistor array panel including forming a gate electrode, forming an insulating layer on the gate electrode, sequentially forming a lower conducting layer and a upper conducting layer on the insulating layer, etching the upper conducting layer to form a first source electrode and a first drain electrode, etching the lower conducting layer to form the second source electrode and the second drain electrode, over-etching the second source electrode and the second drain electrode, and forming an organic semiconductor between the second source electrode and the second drain electrode.

Abstract: A display substrate includes a thin film transistor and a pixel electrode. The thin film transistor includes source and drain electrodes, an active layer covering the source and drain electrodes, and a gate electrode formed on the active layer. The pixel electrode includes the same material as that of the gate electrode, and is formed in the process of forming the gate electrode to reduce the number of process steps and the number of masks.

Abstract: A thin film transistor array panel includes a gate electrode formed on a substrate, a gate insulator covering the gate electrode, a source electrode including a first transparent material and disposed on the gate insulator, a drain electrode including a second transparent material and disposed on the gate insulator, and an organic semiconductor formed on the source and drain electrodes, and the gate insulator therebetween. The source electrode includes a first boundary opposing a second boundary of the drain electrode relative to the gate electrode, and the opposing boundaries overlap boundaries of the gate electrode with an alignment margin in the range of about ?1 to +5 microns.

Abstract: An organic thin film transistor array panel is provided, which includes: a substrate; a data line formed on the substrate and including a source electrode; a drain electrode formed on the substrate and separated from the data line; an organic semiconductor disposed on the source electrode and the drain electrode; a gate insulator formed on the organic semiconductor; a gate line including a gate electrode disposed on the gate insulator; a passivation layer formed on the gate line and having a first contact hole on the drain electrode; a pixel electrode connected to the drain electrode through the first contact hole; and an opaque light blocking member disposed under the organic semiconductor.

Abstract: A method for forming a contact of an organic active layer is provided. In this method, a transparent conductive oxide thin film is formed on a substrate, and a surface of the oxide thin film is activated by inducing a base —OH and an oxide —O. Then, the oxide thin film is washed with a hydrophobic material after activating the surface. A self-assembled monolayer is formed on the oxide thin film after washing, and an organic active layer is formed on the self-assembled monolayer. A method for manufacturing a flat panel display including formation of the contact, and an organic thin film transistor display panel and an organic light emitting diode display including the contact are also provided.

Abstract: A thin film transistor array panel is provided, which includes an insulating substrate, a gate line formed on the insulating substrate, a gate insulating layer covering the gate line, a data line formed on the gate insulating layer, a lower passivation layer covering the data line, an upper passivation layer formed on the lower passivation layer and made of organic insulating material, and a pixel electrode formed on the upper passivation layer. The thicknesses of the gate insulating layer, the lower passivation layer, and the pixel electrode are respectively represented as dG, dP, and dI, the refraction indexes of the gate insulating layer, the passivation layer, and the pixel electrode are respectively represented as nG, nP, and nI, and condition equations are satisfied according to: 4(dGnG+dPnP)=, which is an even multiple of the wavelength; and 4dInI=, which is an even multiple of the wavelength.

Abstract: A method for manufacturing a thin film transistor array panel includes forming a gate electrode, forming a source electrode and a drain electrode opposing each other and separated from each other on the gate electrode, forming a gate insulator on the gate electrode, forming an organic semiconductor on the gate insulator, and forming a passivation member covering the organic semiconductor, wherein the source and drain electrodes contact the organic semiconductor, and an ink-jet printing process is used to form at least two among the gate insulator, the organic semiconductor, and the passivation member, and wherein a mixed solvent including at least two among a gate insulator material, an organic semiconductor material, and a passivation member material is sprayed in the ink-jet printing process.

Abstract: A method of manufacturing a flexible display is provided, which includes: adhering a plastic substrate on a supporter using an adhesive; forming a thin film pattern on the plastic substrate; and separating the plastic substrate from the supporter using a solvent including THF (tetrahydrofuran). In this manner, the plastic substrate may be tidily separated from the supporter by using THF.

Abstract: An organic thin film transistor substrate and a method of manufacturing the organic thin film transistor substrate capable of preventing overflow of an organic semiconductor layer. An organic thin film transistor substrate comprises a gate line formed on the substrate, a data line intersecting the gate line, a thin film transistor connected to the gate line and the data line and including an organic semiconductor layer, a pixel electrode connected to the thin film transistor, an organic protective layer protecting the thin film transistor, a first bank-insulating layer providing filling areas in the organic gate insulating layer and the organic semiconductor layer, and a second bank-insulating layer providing the filling area of the organic semiconductor layer together with the first bank-insulating layer and formed on a source electrode and a drain electrode of the thin film transistor.