Abstract: This disclosure above describes a method, a device, and a system for encrypting/decrypting physical channels in a wireless communication network. Among various embodiments are: pre-allocating a key, dynamically granting a key, encrypting the physical channel based on key in various levels, dividing the spectrum into two categories, or dividing a network into an initial access network and a private network. In one embodiment, a method for physical channel encryption is disclosed. Performed by a UE, the method may include obtaining a first key for decrypting a first physical channel, the first physical channel being encrypted; and decrypting the first physical channel based on the first key to obtain a signal or data transmitted by a first network element, the signal or the data being carried in the first physical channel.

Abstract: Disclosed is a pyridazinone compound represented by Formula (I), or a pharmaceutically acceptable salt, prodrug, hydrate, solvate, polymorph, stereoisomer, or isotopic variant thereof. The compound can be used for preparation of medicinal products for treatment and/or prophylaxis of a disease or condition associated with thyroid hormone abnormalities. The compound has higher selectivity to TH?, better pharmacokinetic parameters, desired stability, and higher agonistic activity toward TH?.

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.

Abstract: The present utility model relates to a device for improving gas detection in a photoionization detector. A gas detector is provided. The device reduces interference of photoelectric noise on the reading of the gas detector for target gases such as volatile organic compounds.

Abstract: The present disclosure provides a request identification method and apparatus, a device, and a storage medium. The method includes: obtaining a to-be-identified access request and a frequent item set for identifying an abnormal request, the frequent item set including a target client feature obtained based on mining of historical request data, a quantity of historical request data corresponding to the target client feature being greater than a predetermined frequent threshold, and the frequent item set being an item set that passes a request timestamp distribution abnormality detection; matching client information carried in the to-be-identified access request with the target client feature included in the frequent item set to obtain a matching result; and determining, when the matching result indicates a successful match, the to-be-identified access request as an abnormal request. The abnormal request is identified based on the pre-generated frequent item set for identifying the abnormal request.

Abstract: The present disclosure provides a flow battery and a cell stack. The cell stack includes: a first end plate; a second end plate; and at least one cell module arranged between the first end plate and the second end plate. Each cell module includes a first flow channel end plate, a second flow channel end plate arranged opposite to the first flow channel end plate, and single-cell assemblies arranged between the first flow channel end plate and the second flow channel end plate. The single-cell assemblies include at least three hermetically-assembled cell assemblies, the first flow channel end plate is provided with arch-like flow channels, the second flow channel end plate is provided with arch-like flow channels, and each arch-like flow channel is provided with a flow channel aperture in communication with the at least three hermetically-assembled cell assemblies.

Abstract: The invention relates to a method for preparing high-stability liquid blueberry anthocyanins, belonging to the field of food processing. A method for preparing high-stability liquid blueberry anthocyanins comprises the following process steps: adding graphene oxide and chitosan to an MES buffer solution at room temperature, mixing homogeneously and adding EDC and NHS sequentially, reacting to obtain a first solution; adding dry blueberry anthocyanin powder in the first solution, adjusting pH to 4.5 to 5.0 and mixing homogeneously to obtain a second solution, and treating the second solution at 350 to 420 MPa and 2 to 4° C. to obtain the product. The method for increasing the stability of blueberry anthocyanins provided by the present invention uses dry blueberry anthocyanin powder as a raw material and adds graphene oxide combined with chitosan compound as an anthocyanin stabilizer, thereby increasing the stability of blueberry anthocyanins during processing and production.

Abstract: The present disclosure provides a direct current (DC) transformer error detection apparatus for a pulsating harmonic signal, including a DC and pulsating harmonic current output module and an external detected input module, where the DC and pulsating harmonic current output module outputs a DC and a DC superimposed pulsating harmonic current to an internal sampling circuit and a self-calibrated standard resistor array; and the internal sampling circuit converts the input DC and the input DC superimposed pulsating harmonic current into a voltage signal, and sends the voltage signal to an analog-to-digital (AD) sampling and measurement component through a front-end conditioning circuit and a detected input channel. The DC transformer error detection apparatus can complete self-calibration for measurement of the DC and the pulsating harmonic signal on a test site.

Abstract: Embodiments include semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system. The one or more deposition precursors may include a silicon-containing precursor that may be a cyclic compound. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: Disclosed are a rod-shaped sodium ion positive electrode material, a preparation method therefor and an application thereof. The material comprises a rod-shaped base material and nanofibers inserted into the base material. C—Na is loaded on the nanofibers. The chemical general formula of the rod-shaped sodium ion positive electrode material is Na(FeaTb)PO4/CNF-c(C—Na), and 0.001?c?0.1, wherein T is at least one of Ni, Co, Zn, Mn, Fe, V, Ti or Mo, 0.9?a<1, 0<b?0.2, and 0.001?c?0.1. In the present invention, on one hand, some transition metal elements are doped to improve the electrochemical performance thereof, and on the other hand, a modulator is added to synthesize the rod-shaped sodium ion positive electrode material, and the C—Na loaded nanofibers are added to adjust the proportion of large and small rod-shaped materials, so that the composition of a single Na(FeaTb)PO4 rod-shaped nanostructure is optimized.

Abstract: Embodiments include semiconductor processing methods to form low-K films on semiconductor substrates are described. The processing methods may include flowing one or more deposition precursors to a semiconductor processing system, wherein the one or more deposition precursors include a silicon-containing precursor. The silicon-containing precursor may include a carbon chain. The methods may include generating a deposition plasma from the one or more deposition precursors. The methods may include depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant less than or about 3.0.

Abstract: A lithium manganate positive electrode active material, comprising a lithium manganate matrix and a cladding layer as a “barrier layer” and a “functional layer” are described. The cladding layer can not only “prevent” the transition metal ions which have been produced by the lithium manganate matrix from directly “running” into the electrolyte solution, but also “prevent” the hydrofluoric acid in the electrolyte solution from directly contacting with the lithium manganate substrate, and then prevent the lithium manganate matrix from dissolving out more transition metal manganese ions; as a “functional layer”, the cladding layer contains various effective ingredients inside, which can reduce the transition metal manganese ions already present inside the battery through chemical reactions or adsorption effects, thus slowing down the generation of transition metal manganese and the decomposition of the SEI film (solid electrolyte interphase film) catalyzed by the transition metal manganese.

Abstract: A semiconductor structure includes a semiconductor on insulator (SOI) substrate, a first electrically conductive structure, and a second electrically conductive structure. The SOI substrate includes a base substrate, a buried insulation layer disposed on the base substrate, a semiconductor layer disposed on the buried insulation layer, and a trap rich layer disposed between the buried insulation layer and the base substrate. At least a part of the first electrically conductive structure and at least a part of the second electrically conductive structure are disposed in the trap rich layer. A part of the trap rich layer is disposed between the first electrically conductive structure and the second electrically conductive structure. The first electrically conductive structure, the second electrically conductive structure, and the trap rich layer disposed between the first electrically conductive structure and the second electrically conductive structure are at least a portion of an anti-fuse structure.

Abstract: An optical lens comprises: a first lens (L1) having a negative focal power; a second lens (L2); a third lens (L3); a fourth lens (L4); a fifth lens (L5), wherein the fourth lens (L4) and the fifth lens (L5) forms an achromatic lens group; and a sixth lens (L6), wherein the first lens (L1), the second lens (L2), the third lens (L3), the fourth lens (L4), the fifth lens (L5), and the sixth lens (L6) are sequentially disposed along a direction from an object side to an image side, wherein the first lens (L1) has at least one object surface (S1) facing the object side, and the object surface (S1) of the first lens (L1) is convex, and wherein the second lens (L2) has at least one image surface (S4) facing the image side, and the image surface (S4) of the second lens (L2) is convex so as to facilitate forming a concentric circle structure.

Abstract: Provided are a flavone derivative represented by formula I and a pharmaceutically acceptable salt, hydrate or solvate thereof. (I) In formula I, R1 is selected from the group consisting of H, C1-4 alkyl, amino and C1-4 acyl; R2 is isopentenyl or 2-hydroxy-isopentyl; R3 is selected from the group consisting of H, methyl and deuterated methyl; R4 is selected from the group consisting of C1-4 alkyl, amino, C1-4 acyl, and (II), wherein R5 represents a monosaccharide residue or an oligosaccharide residue; L is selected from the group consisting of a polypeptide, C1-C20 linear alkyl or a derivative thereof, a derivative of C1-C20 linear or branched acyl, C1-C20 glycol or a derivative thereof, and (III), wherein Y is (IV), a is an integer from 0-100, b is an integer from 1-100, c is an integer from 1-10, d is an integer from 0-100, and e is an integer from 0-100. The flavone derivative according to the present invention exhibits an potent and broad-spectrum anti-cancer activity.

Abstract: Exemplary semiconductor processing methods may include providing one or more deposition precursors to a processing region of a semiconductor processing chamber. A semiconductor substrate may be positioned within the processing region. The methods may include forming a layer of low dielectric constant material on the semiconductor substrate. The methods may include purging the processing region of the one or more deposition precursors. A plasma power may be maintained at less than or about 750 W while purging the processing region. The methods may include forming an interface layer on the layer of low dielectric constant material. The methods may include forming a cap layer on the interface layer.

Abstract: Disclosed is an oven, including a body assembly, an air inlet cylinder and a support member. The body assembly mounted on the support member includes a body, a top cover and an enclosure; the body includes a bottom plate and a side plate which includes a top end and a bottom end; the bottom plate is provided with a first air inlet hole, a side of the side plate near the top end is provided with a second air inlet hole; the enclosure is provided around the side plate, the enclosure, the side plate and the top cover form a first air inlet channel; an inner cavity in the body is communicated with the first air inlet channel through the second air inlet hole; an air inlet cylinder in the inner cavity is provided with a second air inlet channel for air entering the inner cavity from the outside.

Abstract: A method for dielectric filling of a feature on a substrate yields a seamless dielectric fill with high-k for narrow features. In some embodiments, the method may include depositing a metal material into the feature to fill the feature from a bottom of the feature wherein the feature has an opening ranging from less than 20 nm to approximately 150 nm at an upper surface of the substrate and wherein depositing the metal material is performed using a high ionization physical vapor deposition (PVD) process to form a seamless metal gap fill and treating the seamless metal gap fill by oxidizing/nitridizing the metal material of the seamless metal gap fill with an oxidation/nitridation process to form dielectric material wherein the seamless metal gap fill is converted into a seamless dielectric gap fill with high-k dielectric material.

Abstract: A fault diagnosis method includes detecting a state of a relay device, sending a fault diagnosis trigger signal to the relay device based on the stateto enable the relay device to enter a fault diagnosis mode, where the fault diagnosis trigger signal includes one or more of a variable supply voltage value, a transmit/receive control signal, and a diagnosis control signal, detecting a state of the relay device in the fault diagnosis mode, determining a fault code based on the state, and determining a fault based on the fault code.

Abstract: Method of forming low-k films with reduced dielectric constant, reduced CHx content, and increased hardness are described. A siloxane film is on a substrate surface using a siloxane precursor comprising O—Si—O bonds and cured using ultraviolet light.