Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-nitrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-carbon-and-nitrogen-containing material on the substrate. The layer of silicon-carbon-and-nitrogen-containing material may be characterized by a dielectric constant of less than or about 4.0. The layer of silicon-carbon-and-nitrogen-containing material may be characterized by a leakage current at 2 MV/cm of less than or about 3E-08 A/cm2.

Abstract: Provided is a composition comprising aflibercept and a variant thereof, wherein the variant is a truncation variant with a truncated VEGF binding portion of aflibercept, and wherein the content of the truncation variant is less than or equal to about 20% by mass percentage. Also provided is a pharmaceutical formulation comprising the composition. Further, provided are a method for detecting the variant and use of the variant in quality inspection or quality control of an aflibercept-containing product.

Abstract: A beamforming-based communication method includes: obtaining cell information; when the cell information meets a preset low-load condition, dividing to-be-processed broadcast messages into a plurality of broadcast message groups; determining, based on a preset correspondence between a broadcast message and a broadcast beam, a broadcast beam group corresponding to each broadcast message group and a broadcast beam for sending no broadcast message in each time window; sending the broadcast message group in each time window by using the broadcast beam group; and shutting down, in each time window, the broadcast beam for sending no broadcast message. Some broadcast beams are used in each time window to send the broadcast message, and the broadcast beam for sending no broadcast message is shut down.

Abstract: Exemplary semiconductor processing methods may include providing a first silicon-containing precursor and a second silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The first silicon-containing precursors may include Si—O bonding. The methods may include forming a plasma of the first silicon-containing precursor and the second silicon-containing precursor in the processing region. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-oxygen-and-carbon-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-oxygen—and—carbon-containing material on the substrate. The layer of silicon-oxygen—and—carbon-containing material may be characterized by a dielectric constant of less than or about 4.5. The layer of silicon-oxygen—and—carbon-containing material may be characterized by a density of greater than or about 2.0 g/cm3.

Abstract: Provided are a method and system for understanding a medical Chinese spoken language, an electronic device, and a storage medium, which relate to the field of semantic understanding technologies. The method includes: inputting a concatenated first vector determined based on the first weighted vector matrix and the medical identification vector semantic representation matrix to an intent recognition model to obtain an intent recognition prediction value; constructing a slot filling question sentence based on the intent recognition prediction value and inputting the slot filling question sentence into a second semantic vector determining model to obtain a slot filling vector semantic representation matrix, thereby determining a concatenated second vector; and inputting the concatenated second vector into a slot filling model to obtain a slot filling prediction value. This improves accuracy of understanding the medical Chinese spoken language.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by a pulsing RF power operating at less than or about 2,000 W. The methods may include forming a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant less than or about 3.0.

Abstract: Embodiments disclosed herein include a method of post development treatment of a metal-oxide photoresist. In an embodiment, a method includes depositing a metal-oxide photoresist over a substrate, exposing the metal-oxide photoresist with an extreme ultra-violet (EUV) exposure to form exposed regions and unexposed regions, developing the exposed metal-oxide photoresist, and performing a surface treatment of the developed metal-oxide photoresist to form a coating on the developed metal-oxide photoresist.

Abstract: Exemplary processing methods may include providing a treatment precursor to a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region. The substrate may include a layer of a silicon-containing material. The methods may include forming inductively-coupled plasma effluents of the treatment precursor. The methods may include contacting the layer of the silicon-containing material with the inductively-coupled plasma effluents of the treatment precursor to produce a treated layer of the silicon-containing material. The contacting may reduce a dielectric constant of the layer of the silicon-containing material.

Abstract: Exemplary semiconductor processing methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors, wherein the plasma effluents are formed at a plasma power of less than or about 2,000 W. The methods may include depositing a layer of silicon-containing material on the substrate.

Abstract: A wear diagnosis system and method for a floating tile of an oil receiver based on industrial Internet are provided and includes the following. The plurality of vibration sensors are installed on the oil receiver of a hydroturbine, the vibration sensors are configured for collecting vibration data of the oil receiver. The plurality of swing sensors are installed on the oil receiver of the hydroturbine, and the swing sensors are configured for collecting swing data of the oil receiver. The monitoring subsystem is configured for collecting start-stop information of an oil pump of an oil collecting device of the hydroturbine, an oil level of a hub high-level oil tank and unit load information. The test result collection subsystem is configured for collecting oiling test results of each oil tank of the hydroturbine. The diagnosis subsystem is configured to diagnose whether the floating tile of the oil receiver is worn.

Abstract: Semiconductor processing methods are described for forming low-? dielectric materials. The methods may include providing deposition precursors to a processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-carbon-and-hydrogen-containing precursor. A substrate may be disposed within the processing region. The methods may include forming plasma effluents of the deposition precursors. The methods may include depositing a layer of silicon-containing material on the substrate. The layer of silicon-containing material may be characterized by a dielectric constant of less than or about 4.0.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by an RF power operating at between about 50 W and 1,000 W, at a pulsing frequency below about 100,000 Hz, and at a duty cycle between about 5% and 95%. The methods may include forming a layer of material on the substrate. The layer of material may include a silicon-containing material.

Abstract: Disclosed in the present disclosure are a catalytic combustion type hydrogen sensor and a manufacturing method therefor. The catalytic combustion type hydrogen sensor includes a catalytic combustion element and a compensation element, where both the catalytic combustion element and the compensation element are planar film structures taking mica sheets as substrates, and platinum resistors and aluminum oxide film carriers are sequentially adhered on surfaces of the mica sheets. A layer of palladium nanoparticles are further adhered to a surface of the aluminum oxide film carrier of the catalytic combustion element as a catalyst.

Abstract: Method of forming low-k films with reduced dielectric constant, reduced CHx content, and increased hardness are described. A siloxane film is on a substrate surface using a siloxane precursor comprising O—Si—O bonds and cured using ultraviolet light.

Abstract: Embodiments include semiconductor processing methods to form dielectric films on semiconductor substrates are described. The methods may include providing a silicon-containing precursor and a nitrogen-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region. The methods may include providing an inert precursor to the processing region of the semiconductor processing chamber. The methods may include generating plasma effluents of the silicon-containing precursor, the nitrogen-containing precursor, and the inert precursor. The methods may include depositing a silicon-containing material on the substrate.

Abstract: The present disclosure generally relates to autonomous vehicle (AV) prediction systems and in particular, to novel methods for training a prediction layer of the AV software stack. In some aspects, the disclosure can provide a process for receiving road data representing a plurality of entities, predicting, using a prediction layer of an autonomous vehicle (AV), a first set of future trajectories for one or more of the plurality of entities, and predicting, using a kinematics model, a second set of future trajectories for one or more of the plurality of entities. In some approaches, the process can further include steps for flagging one or more instances in the road data for which the first set of future trajectories is less accurate than the second set of future trajectories. Systems and machine-readable media are also provided.

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.

Abstract: In accordance with an embodiment, a method applied to an access network device includes: configuring a first frequency domain resource for a physical downlink shared channel (PDSCH) of a cell, wherein the first frequency domain resource occupies a part of an available bandwidth of the access network device; configuring a second frequency domain resource for the cell, wherein the second frequency domain resource is a frequency domain resource available to the cell for transmitting downlink information, the second frequency domain resource occupies a part of the available bandwidth of the access network device, and the second frequency domain resource at least partially overlaps the first frequency domain resource; and adjusting a bandwidth of the second frequency domain resource based on at least one of a physical resource block utilization of the cell or an amount of downlink data of a terminal device in the cell.

Abstract: Exemplary methods of forming a silicon-and-carbon-containing material may include flowing a silicon-oxygen-and-carbon-containing precursor into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma within the processing region of the silicon-and-carbon-containing precursor. The plasma may be formed at a frequency less than 15 MHz (e.g., 13.56 MHz). The methods may include depositing a silicon-and-carbon-containing material on the substrate. The silicon-and-carbon-containing material as-deposited may be characterized by a dielectric constant below or about 3.5 and a hardness greater than about 3 Gpa.