Abstract: Embodiments of this application disclose an interference coordination method and an apparatus. The method includes: A first TDD system and a second TDD system are adjacent asynchronous TDD systems of each other, the first TDD system communicates with UE in a first slot by using a first specified frequency domain resource, and the second TDD system communicates with the UE in a second slot by using a second specified frequency domain resource, where the first specified frequency domain resource is different from the second specified frequency domain resource. Alternatively, the first TDD system modifies a slot configuration of a third slot corresponding to the first slot when communicating with the UE in the first slot, and the second TDD system modifies a slot configuration of a fourth slot corresponding to the second slot when communicating with the UE in the second slot. The first slot and the second slot have same time domain positions and different functions.

Abstract: A method for dielectric filling of a feature on a substrate yields a seamless dielectric fill with high-k for narrow features. In some embodiments, the method may include depositing a metal material into the feature to fill the feature from a bottom of the feature wherein the feature has an opening ranging from less than 20 nm to approximately 150 nm at an upper surface of the substrate and wherein depositing the metal material is performed using a high ionization physical vapor deposition (PVD) process to form a seamless metal gap fill and treating the seamless metal gap fill by oxidizing/nitridizing the metal material of the seamless metal gap fill with an oxidation/nitridation process to form dielectric material wherein the seamless metal gap fill is converted into a seamless dielectric gap fill with high-k dielectric material.

Abstract: Semiconductor processing methods are described for forming UV-treated, low-? dielectric films. The methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-carbon-containing precursor. The methods may further include generating a deposition plasma from the deposition precursors within the substrate processing region, and depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The as-deposited silicon-and-carbon-containing material may be characterized by greater than or about 5% hydrocarbon groups. The methods may still further include exposing the deposited silicon-and-carbon-containing material to ultraviolet light. The exposed silicon-and-carbon-containing material may be characterized by less than or about 2% hydrocarbon groups.

Abstract: Exemplary semiconductor processing methods may include providing a silicon-containing precursor to a processing region of a semiconductor processing chamber. A substrate may be disposed within the processing region of the semiconductor processing chamber. The methods may include forming a plasma of the silicon-containing precursor in the processing region. The plasma may be at least partially formed by an RF power operating at between about 50 W and 1,000 W, at a pulsing frequency below about 100,000 Hz, and at a duty cycle between about 5% and 95%. The methods may include forming a layer of material on the substrate. The layer of material may include a silicon-containing material.

Abstract: Embodiments of the semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (? value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.

Abstract: Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF3 plasma effluents, and greater than or about 1000 sccm of O2 plasma effluents.

Abstract: A controller of a host system executes a method for detecting an external AC electrical device. While an AC charging inlet of the host system is electrically connected to the device via different vehicle-to-live (V2L) and jump-charge connections, the controller detects a control pilot voltage and a proximity voltage. When the control pilot voltage is 0V, the controller determines whether entry conditions are satisfied indicative of a desire to offload power from the host system to the device. When the entry conditions are satisfied, the proximity or control pilot voltage are modulated to generate a modulated voltage signal, which the controller compares to an expected voltage indicative of the device. Power is offloaded to the device when the modulated voltage signal matches the expected voltage.

Abstract: A blending device (100) is provided including a blade assembly (106) having a blade coupling structure, the blade coupling structure comprising a set of blade electrical connectors (128). The blending device also includes a blender base assembly (104) having a base coupling structure, the base coupling structure comprising a plurality of base electrical connector coupler sets (130A-130C). Each base electrical connector coupler set corresponds with a coupling position of the blade coupling structure and the base coupling structure. The blade assembly and the blender base assembly are electrically coupled in a closed configuration in which the set of blade electrical connectors is in contact with one of the plurality of base electrical connector coupler sets. A method of manufacturing the blending device is also provided.

Abstract: A packet transmission method includes generating, by a first router, a first routing information update packet; generating, by the first router, a first source-tracing packet, where the first source-tracing packet is used to indicate that the first router is a source router generating the first routing information update packet; and determining, by the first router, that a second router adjacent to the first router has a source-tracing capability, and sending the first source-tracing packet to the second router.

Abstract: A fault root cause analysis method and apparatus are provided. The method includes: obtaining a first alarm event set, where the first alarm event set includes a plurality of alarm events; for a first alarm event in the first alarm event set, extracting a feature vector of the first alarm event, where a part of or all features of the feature vector are used to represent a relationship between the first alarm event and another alarm event in the first alarm event set; and determining, based on the feature vector of the first alarm event, whether the first alarm event is a root cause alarm event. In this application, whether the first alarm event is the root cause alarm event is determined based on a feature vector of the relationship between the first alarm event and the another alarm event, and the accuracy of fault root cause identification is improved.

Abstract: The present disclosure relates to signal sending and detection methods and apparatus. In one example method, a sending apparatus generates characteristic sequence signals corresponding to a plurality of time division duplexing (TDD) network standards, where the characteristic sequence signals are used for remote interference detection. The sending apparatus sends the characteristic sequence signals in a spatial multiplexing manner.

Abstract: A beamforming-based communication method includes: obtaining cell information; when the cell information meets a preset low-load condition, dividing to-be-processed broadcast messages into a plurality of broadcast message groups; determining, based on a preset correspondence between a broadcast message and a broadcast beam, a broadcast beam group corresponding to each broadcast message group and a broadcast beam for sending no broadcast message in each time window; sending the broadcast message group in each time window by using the broadcast beam group; and shutting down, in each time window, the broadcast beam for sending no broadcast message. Some broadcast beams are used in each time window to send the broadcast message, and the broadcast beam for sending no broadcast message is shut down.

Abstract: This application provides a data processing method and an apparatus, to detect an interference source, shorten a transmit period and a detection period of a feature sequence, and improve interference detection efficiency. The method includes: determining, by a first base station, a transmit parameter of a first feature sequence based on a first bandwidth and a preset rule, where the first bandwidth is a bandwidth greater than a threshold in a plurality of base stations; and if a frequency corresponding to the transmit parameter of the first feature sequence falls within a bandwidth range of the first base station, sending, by the first base station, the first feature sequence in the bandwidth range of the first base station, so that when receiving the first feature sequence, a second base station determines, based on the first feature sequence, whether the first base station causes interference to the second base station.

Abstract: A controller of a host system executes a method for detecting an external AC electrical device. While an AC charging inlet of the host system is electrically connected to the device via different vehicle-to-live (V2L) and jump-charge connections, the controller detects a control pilot voltage and a proximity voltage. When the control pilot voltage is 0V, the controller determines whether entry conditions are satisfied indicative of a desire to offload power from the host system to the device. When the entry conditions are satisfied, the proximity or control pilot voltage are modulated to generate a modulated voltage signal, which the controller compares to an expected voltage indicative of the device. Power is offloaded to the device when the modulated voltage signal matches the expected voltage.

Abstract: The present invention belongs to the medical and technical field and provides a medicine or health food composition of nicotinamide mononucleotide and mogroside. In addition, the present invention also provides the preparation method, formulation and application of the composition.

Abstract: Embodiments of the present disclosure disclose a method, apparatus, device, and storage medium for switching a voice role. The method includes: recognizing an instruction of switching a voice role input by a user, and determining a target voice role corresponding to the instruction of switching the voice role; switching a current voice role of a smart terminal to the target voice role, different voice roles having different role attributes, and a role attribute including a role utterance attribute; generating interactive response information corresponding to an interactive voice, based on the interactive voice input by the user and a role utterance attribute of the target voice role; and providing a response voice corresponding to the interactive response information to the user. The embodiments of the present disclosure enable different voice roles to have different role utterance attributes, so that the voice role has a role sense.

Abstract: Semiconductor processing methods are described for forming UV-treated, low-? dielectric films. The methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-and-carbon-containing precursor. The methods may further include generating a deposition plasma from the deposition precursors within the substrate processing region, and depositing a silicon-and-carbon-containing material on the substrate from plasma effluents of the deposition plasma. The as-deposited silicon-and-carbon-containing material may be characterized by greater than or about 5% hydrocarbon groups. The methods may still further include exposing the deposited silicon-and-carbon-containing material to ultraviolet light. The exposed silicon-and-carbon-containing material may be characterized by less than or about 2% hydrocarbon groups.

Abstract: A method of forming a low-k dielectric layer with barrier properties is disclosed. The method comprises forming a dielectric layer by PECVD which is doped with one or more of boron, nitrogen or phosphorous. The dopant gas of some embodiments may be coflowed with the other reactants during deposition.

Abstract: Exemplary semiconductor processing methods to clean a substrate processing chamber are described. The methods may include depositing a dielectric film on a first substrate in a substrate processing chamber, where the dielectric film may include a silicon-carbon-oxide. The first substrate having the dielectric film may be removed from the substrate processing chamber, and the dielectric film may be deposited on at least one more substrate in the substrate processing chamber. The at least one more substrate may be removed from the substrate processing chamber after the dielectric film is deposited on the substrate. Etch plasma effluents may flow into the substrate processing chamber after the removal of a last substrate having the dielectric film. The etch plasma effluents may include greater than or about 500 sccm of NF3 plasma effluents, and greater than or about 1000 sccm of O2 plasma effluents.

Abstract: Embodiments of the semiconductor processing methods to form low-? films on semiconductor substrates are described. The processing methods may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber. The deposition precursors may include a silicon-containing precursor that has at least one vinyl group. The methods may further include generating a deposition plasma in the substrate processing region from the deposition precursors. A silicon-and-carbon-containing material, characterized by a dielectric constant (? value) less than or about 3.0, may be deposited on the substrate from plasma effluents of the deposition plasma.