Patents by Inventor Bo-Young Seo

Bo-Young Seo has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200183003
    Abstract: An apparatus and method for identifying a short cut-in vehicle, and a vehicle using the same are disclosed. The apparatus includes a signal conversion unit configured to receive and signal-process a plurality of sensing signals, a computation unit configured to compute state information of a surrounding vehicle detected from the signal-processed signal, a sensor fusion track output unit configured to output a sensor fusion track based on the computed state information of the surrounding vehicle, an occupancy distance map (ODM) output unit configured to output ODM information including a grid map corresponding to a vehicle detection region and an ODM object including a plurality of detection points based on the computed state information of the surrounding vehicle, and a cut-in vehicle identification unit configured to identify a cut-in vehicle based on the output sensor fusion track and ODM information.
    Type: Application
    Filed: November 4, 2019
    Publication date: June 11, 2020
    Inventors: Hoon Lee, Ji Eun Won, Dong Gu Lee, Sang Bok Won, Min Kyun Yoo, Jae Pil Hwang, Hyung Sun Jang, Uk Il Yang, Hyok Jin Chong, Kyoung Jun Lee, Woo Young Lee, Seul Ki Han, Bo Young Yun, Su Min Jo, Seung Joon Lee, Byung Gi Hong, Soo Bin Jeon, Min Ho Park, Gi Hyun Seo, Kyu Ho Park, Jun Kwon Jee
  • Publication number: 20200077000
    Abstract: A camera module includes a housing having a lens module, an aperture module provided above the lens module and including blades that form incident holes having different sizes in multiple stages or successively, a moving part configured to linearly reciprocate to drive the blades, including a driving magnet facing a driving coil, a position sensor configured to sense a position of the moving part according to interaction with the driving magnet, and a controller configured to receive a signal from the position sensor and confirm or correct the position of the moving part.
    Type: Application
    Filed: February 22, 2019
    Publication date: March 5, 2020
    Applicant: Samsung Electro-Mechanics Co., Ltd.
    Inventors: Kyung Hun LEE, Jae Kyung KIM, Bo Sung SEO, Sang Joon KIM, Sung Ryung PARK, Ho Young JOO, Sang Eun PARK, Hwan Jun KANG
  • Publication number: 20190371861
    Abstract: An image sensor includes a sensor region for receiving light and generating an image data and a pad region adjacent to the sensor region, an insulation layer on the substrate, and a lower transparent electrode on the insulation layer in the sensor region, and an etch stop layer on the insulation layer in the sensor region and pad region. The etch stop layer may include silicon nitride. A height of an uppermost surface of the lower transparent electrode may be substantially equal to a height of an upper surface of the etch stop layer, with respect to the substrate.
    Type: Application
    Filed: February 26, 2019
    Publication date: December 5, 2019
    Applicant: Samsung Electronics Co., Ltd.
    Inventors: Dong Chan Kim, Kwan Sik Kim, Bo Yun Kim, Eun Sung Seo, II Young Yoon, Seung Hoon Choi
  • Patent number: 10454536
    Abstract: Disclosed herein are a method for transceiving a broadcast signal using a combination of multiple antenna schemes with layered division multiplexing and an apparatus for the method. A method for receiving a broadcast signal includes generating received signals based on signals that are received through multiple receiving antennas, estimating channels between the receiving antennas and transmitting antennas, restoring a core-layer signal corresponding to the received signals, and restoring an enhanced-layer signal based on a cancellation process, wherein the cancellation process corresponds to the core-layer signal and is separately performed for the individual receiving antennas.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: October 22, 2019
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung-Ik Park, Bo-Mi Lim, Sun-Hyoung Kwon, Heung-Mook Kim, Jae-Hyun Seo, Jae-Young Lee, Nam-Ho Hur, Hoi-Yoon Jung, David Gomez-Barquero, Eduardo Garro
  • Patent number: 10453801
    Abstract: A magnetic random-access memory (MRAM) device and a semiconductor package include a magnetic shielding layer that may suppress at least one of magnetic orientation errors and deterioration of magnetic tunnel junction (MTJ) structures due to external magnetic fields. A semiconductor device includes: a MRAM chip including a MRAM; and a magnetic shielding layer including an upper shielding layer and a via shielding layer. The upper shielding layer is on a top surface of the MRAM chip, and the via shielding layer extends from the upper shielding layer and passes through the MRAM chip.
    Type: Grant
    Filed: April 7, 2016
    Date of Patent: October 22, 2019
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bo-young Seo, Yong-kyu Lee
  • Patent number: 10428451
    Abstract: The present invention relates to a washing machine. A washing machine according to an embodiment of the present invention comprises: a casing for forming the exterior; a tub arranged inside the casing; a drum rotatably provided in the tub to contain laundry; and a water supply/distribution device arranged inside the casing, the water supply/distribution device having a temporary space, in which water flowing in from the outside gathers, a plurality of discharge ports for distributing the water in the temporary space towards a plurality of locations, and a pressure limiting unit for limiting the rise of water pressure in the temporary space.
    Type: Grant
    Filed: June 11, 2014
    Date of Patent: October 1, 2019
    Assignee: LG ELECTRONICS INC.
    Inventors: Bo Sung Seo, Jin Ho Kim, Soo Young Oh, Chang Oh Kim
  • Publication number: 20190275715
    Abstract: An injection molding apparatus for inserting atypical stiffener including an upper mold provided with an upper core and an under mold provided with an under core for manufacturing an injection molding product by receiving synthetic resin melt and curing in a state in which an atypical stiffener whose size is not constant is inserted, may include elastic clampers supported by the under mold, embedded in the under core, interlocked with the size of the atypical stiffener, and elastically pressurizing both sides to hold the atypical stiffener to be inserted into a correct position between the upper core and the under core by the atypical stiffener when the synthetic resin melt is introduced.
    Type: Application
    Filed: March 8, 2019
    Publication date: September 12, 2019
    Applicants: Hyundai Motor Company, Automobile Industrial ACE, Kia Motors Corporation
    Inventors: Yong Goan SEO, Hyun Kyung KIM, Byungkyu YOON, Do Jung CHOI, Bo Young CHOI, Taegbong CHO
  • Publication number: 20190265553
    Abstract: A liquid crystal display according to an exemplary embodiment of the present invention includes: a first display panel and a second display panel. A liquid crystal layer is between the first display panel and the second display panel with a sealant therebetween. The first display panel includes a display area and a non-display area. First light blocking members are disposed in the non-display area. The liquid crystal layer includes a plurality of liquid crystal molecules and a plurality of protrusions. The protrusions are adjacent to at least one of the first display panel or the second display panel.
    Type: Application
    Filed: September 21, 2018
    Publication date: August 29, 2019
    Inventors: Gi Hoon Yang, Ju Young Sung, Min Ki Kwon, Chu Young Seo, Bo Seul Lee
  • Publication number: 20190167647
    Abstract: A method for treating stroke in a subject includes administering to the subject a composition that includes a compound having a structure represented by Formula 1 as an active ingredient. The composition may treat a stroke by inhibiting 5? adenosine monophosphate-activated protein kinase (AMPK) activity of zinc neurotoxicity which is a main cause of strokes. The stroke may include hemorrhagic stroke, ischemic stroke or metal toxicity stroke.
    Type: Application
    Filed: August 8, 2017
    Publication date: June 6, 2019
    Inventors: Yang-Hee KIM, Hwangseo PARK, Jae-Young KOH, Jae-Won EOM, Tae-Youn KIM, Bo-Ra SEO
  • Patent number: 10303275
    Abstract: A touch display device includes a touch display panel for displaying an image corresponding to a touch applied from outside the touch display device, a gate driver for sequentially driving all gate lines of the touch display panel once during a unit field period including at least two continuous field periods, in such a manner that a total gate driving period corresponding to a sum of individual gate driving periods of all gate lines is shorter than the unit field period, and a touch control unit for defining periods of the unit field period other than the total gate driving period, as a touch sensing period, and performing an operation for sensing a touch on the touch display panel during the touch sensing period.
    Type: Grant
    Filed: September 9, 2014
    Date of Patent: May 28, 2019
    Assignee: LG Display Co., Ltd.
    Inventors: Dae-Seok Oh, Ju-Young Lee, Bo-Gun Seo, Hak-Su Kim, Yong-Hwa Park
  • Patent number: 9928892
    Abstract: A resistive memory apparatus includes a memory cell array having a plurality of memory cells and a first ground switch. The plurality of memory cells are arranged in a plurality of rows and a plurality of columns, and each memory cell in a first column of the plurality of memory cells is connected between a first bitline and a first source line. The first ground switch is connected in parallel with the first source line, and the first ground switch is configured to selectively provide a first current path from the first bitline to ground through a selected memory cell in the first column of the plurality of memory cells and the first source line, the current path traversing only a portion of the first source line.
    Type: Grant
    Filed: May 13, 2016
    Date of Patent: March 27, 2018
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bo-young Seo, Yong-seok Chung, Gwan-hyeob Koh, Yong-kyu Lee
  • Publication number: 20170345475
    Abstract: A resistive-type memory device is disclosed. The resistive-type memory device includes a memory cell array and a control logic circuit. The control logic circuit accesses the memory cell array in response to a command and an address provided from an outside. The memory cell array includes at least a first group of resistive-type memory cells and a second group of resistive-type memory cells. Each of the first group of resistive-type memory cells has a first feature size and each of the second group of resistive-type memory cells has a second feature size that is different from the first feature size.
    Type: Application
    Filed: January 9, 2017
    Publication date: November 30, 2017
    Inventors: Choong-Jae LEE, Gwan-Hyeob KOH, Bo-Young SEO, Yong-Kyu LEE
  • Patent number: 9805444
    Abstract: Magnetic random access memory (MRAM)-based frame buffering apparatus are provided that may reduce a size and power consumption thereof by using a pixel self-refresh (PSR) method. The MRAM-based frame buffering apparatus includes a frame buffer memory including magnetic random access memory (MRAM). The frame buffer memory stores at least one piece of frame data. The MRAM-based frame buffering apparatus further includes a magnetic field sensor configured to detect an external magnetic field; and a frame buffer controller configured to control the storing of the at least one piece of frame data according to the intensity of the detected external magnetic field.
    Type: Grant
    Filed: December 3, 2015
    Date of Patent: October 31, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Choong-jae Lee, Gwan-hyeob Koh, Dae-shik Kim, Bo-young Seo
  • Patent number: 9691459
    Abstract: A semiconductor memory device includes a shorted variable resistor element in a memory cell. The semiconductor memory device includes main cells and reference cells each including a cell transistor and a variable resistor element. The variable resistor element of the reference cell is shorted by applying a breakdown voltage of a magnetic tunnel junction (MTJ) element, connection in parallel to a conductive via element, connection to a reference bit line at a node between the cell transistor and the variable resistor element, or replacement of the variable resistor element with the conductive via element. A sense amplifier increases a sensing margin of the main cell by detecting and amplifying a current flowing in a bit line of the main cell and a current flowing in the reference bit line to which a reference resistor is connected.
    Type: Grant
    Filed: August 29, 2016
    Date of Patent: June 27, 2017
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Bo-young Seo, Suk-soo Pyo, Gwan-hyeob Koh, Yong-kyu Lee, Dae-shik Kim
  • Publication number: 20170062032
    Abstract: A semiconductor memory device includes a shorted variable resistor element in a memory cell. The semiconductor memory device includes main cells and reference cells each including a cell transistor and a variable resistor element. The variable resistor element of the reference cell is shorted by applying a breakdown voltage of a magnetic tunnel junction (MTJ) element, connection in parallel to a conductive via element, connection to a reference bit line at a node between the cell transistor and the variable resistor element, or replacement of the variable resistor element with the conductive via element. A sense amplifier increases a sensing margin of the main cell by detecting and amplifying a current flowing in a bit line of the main cell and a current flowing in the reference bit line to which a reference resistor is connected.
    Type: Application
    Filed: August 29, 2016
    Publication date: March 2, 2017
    Inventors: Bo-young Seo, Suk-soo Pyo, Gwan-hyeob Koh, Yong-kyu Lee, Dae-shik kim
  • Patent number: 9583534
    Abstract: A semiconductor device comprises a magneto-resistive device capable of performing multiple functions with low power. The semiconductor device comprises a cell transistor in which a first impurity region and a second impurity region are respectively arranged on both sides of a channel region in a channel direction, a source line connected to the first impurity region of the cell transistor, and the magneto-resistive device connected to the second impurity region of the cell transistor. The first impurity region and the second impurity region are asymmetrical about a center of the cell transistor in the channel direction with respect to at least one of a shape and an impurity concentration distribution.
    Type: Grant
    Filed: July 9, 2015
    Date of Patent: February 28, 2017
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Choong-jae Lee, Hong-kook Min, Bo-young Seo, Aliaksei Ivaniukovich, Yong-kyu Lee
  • Publication number: 20170053688
    Abstract: A resistive memory apparatus includes a memory cell array having a plurality of memory cells and a first ground switch. The plurality of memory cells are arranged in a plurality of rows and a plurality of columns, and each memory cell in a first column of the plurality of memory cells is connected between a first bitline and a first source line. The first ground switch is connected in parallel with the first source line, and the first ground switch is configured to selectively provide a first current path from the first bitline to ground through a selected memory cell in the first column of the plurality of memory cells and the first source line, the current path traversing only a portion of the first source line.
    Type: Application
    Filed: May 13, 2016
    Publication date: February 23, 2017
    Inventors: Bo-young SEO, Yong-seok CHUNG, Gwan-hyeob KOH, Yong-kyu LEE
  • Publication number: 20170047507
    Abstract: A magnetic random-access memory (MRAM) device and a semiconductor package include a magnetic shielding layer that may suppress at least one of magnetic orientation errors and deterioration of magnetic tunnel junction (MTJ) structures due to external magnetic fields. A semiconductor device includes: a MRAM chip including a MRAM; and a magnetic shielding layer including an upper shielding layer and a via shielding layer. The upper shielding layer is on a top surface of the MRAM chip, and the via shielding layer extends from the upper shielding layer and passes through the MRAM chip.
    Type: Application
    Filed: April 7, 2016
    Publication date: February 16, 2017
    Inventors: Bo-young SEO, Yong-kyu LEE
  • Publication number: 20160163254
    Abstract: Magnetic random access memory (MRAM)-based frame buffering apparatus are provided that may reduce a size and power consumption thereof by using a pixel self-refresh (PSR) method. The MRAM-based frame buffering apparatus includes a frame buffer memory including magnetic random access memory (MRAM). The frame buffer memory stores at least one piece of frame data. The MRAM-based frame buffering apparatus further includes a magnetic field sensor configured to detect an external magnetic field; and a frame buffer controller configured to control the storing of the at least one piece of frame data according to the intensity of the detected external magnetic field.
    Type: Application
    Filed: December 3, 2015
    Publication date: June 9, 2016
    Inventors: Choong-jae Lee, Gwan-hyeob Koh, Dae-shik Kim, Bo-young Seo
  • Publication number: 20160124674
    Abstract: Provided is a method and apparatus for controlling a plurality of memory devices. According to various embodiments of the present disclosure, there is provided an electronic device. The electronic device includes a first memory and a second memory, and a processor that is functionally connected with the first memory and the second memory. The processor is configured to determine at least one state associated with the electronic device, and allocate at least a partial area of one of the first memory and the second memory to at least some data of at least one process to be executed in the electronic device based on the at least one state. Other embodiments are possible.
    Type: Application
    Filed: November 4, 2015
    Publication date: May 5, 2016
    Inventors: Bo-Young Seo, Min-Jung Kim, Jung-Yup Kang, Sei-Jin Kim, Dong-Wook Suh, Sung-Hwan Yun