Abstract: Disclosed is a 3-D printing apparatus. The apparatus includes an ink output module including an ink supply unit having an ink for forming an electrode portion, electrolyte or packaging portion received therein and an ink discharge unit coupled to the ink supply unit; a driving unit having the ink output module mounted thereon to move the ink output module in an X, Y, Z axis direction with respect to a substrate where a supercapacitor or secondary battery will be formed; a dispenser connected to the ink supply unit to supply gas having controlled pressure to the ink supply unit through a gas supply tube and to supply the ink within the ink supply unit through the ink discharge unit; and a controller controlling the output of the ink by transmitting a control command for fabricating the supercapacitor or the secondary battery to the dispenser and the driving unit.

Abstract: Disclosed is a 3-D printing apparatus. The apparatus includes an ink output module including an ink supply unit having an ink for forming an electrode portion, electrolyte or packaging portion received therein and an ink discharge unit coupled to the ink supply unit; a driving unit having the ink output module mounted thereon to move the ink output module in an X, Y, Z axis direction with respect to a substrate where a supercapacitor or secondary battery will be formed; a dispenser connected to the ink supply unit to supply gas having controlled pressure to the ink supply unit through a gas supply tube and to supply the ink within the ink supply unit through the ink discharge unit; and a controller controlling the output of the ink by transmitting a control command for fabricating the supercapacitor or the secondary battery to the dispenser and the driving unit.

Abstract: Provided are a silicon ingot slicing apparatus capable of slicing silicon ingots in various forms such as blocks or wafers using microbubbles and wire electric discharge machining.

Abstract: The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.

Abstract: Disclosed is a wafer slicing apparatus which cuts a silicon ingot to fabricate a silicon wafer, and more specifically, a silicon wafer slicing apparatus cutting the silicon ingot using wire discharge machining is disclosed. The present invention provides a silicon wafer slicing apparatus using wire discharge machining comprising: a water tank which contains an electrolyte; a cutting wire which has a cutting section dipped into the water tank and is transferred by a wire driving means; an ingot transferring unit which includes an electrode on which a silicon ingot, an object to be cut, is fixed, and moves the silicon ingot up and down within the cutting section of the cutting wire; an electrolyte circulating means which circulates and refines the electrolyte stored in the water tank; and a power supply unit which supplies a source voltage to the electrode of the ingot transferring unit and the cutting wire.

Abstract: There is disclosed that a MOx nanostructure manufacturing apparatus and a manufacturing method thereof can not only supply a reaction gas more effectively to the surface of a molten metal with ease by injecting a carrier gas to the surface of the molten metal above a graphite crucible as well as bringing the reaction gas in the lower side of the graphite crucible, but also maximize volatilization rates through an inflow of the reaction gas from the lower portion toward the upper of the graphite crucible.

Abstract: Disclosed herein are a SiOx nanoparticle manufacturing apparatus that can not only manufacture a SiOx nanoparticle in large quantities but also prevent a silicon melt residue from being stuck and solidified on an inner bottom surface of a crucible by designing a sliding type tapping structure, and a SiOx nanoparticle manufacturing method using the same.

Abstract: Provided are a silicon ingot slicing apparatus capable of slicing silicon ingots in various forms such as blocks or wafers using microbubbles and wire electric discharge machining.

Abstract: Disclosed is a method of forming a nitrogen-doped porous graphene envelope. The method of forming the nitrogen-doped porous graphene envelope includes dissolving a nitrogen precursor in an organic precursor and then vaporizing the resulting precursor to thus simultaneously synthesize the graphene envelope and perform nitrogen doping in a single step.

Abstract: An apparatus for producing silicon nanoparticles using ICP includes a gas supply part in which first and second pipes for introducing a respective first and second gas into the plasma reactor therethrough are arranged alternately, the first pipes extending from an inlet of the reactor to a plasma initiation region; a plasma reaction part having an ICP coil wound therearound in which the particles are formed as the gases introduced through the respective pipes undergo a plasma reaction; and a collection part for collecting the particles. The apparatus can fully mix the gases introduced through the first gas supply pipes, thus allowing for uniform plasma reaction between the first and second gas, minimizing plasma expansion to increase plasma density within short retention time, easily controlling the size distribution by quenching and capturing nanoparticles, and improving the production yield by preventing the secondary aggregation of particles with cooling gas.

Abstract: An apparatus for producing silicon nanoparticles using ICP includes a gas supply part in which first and second pipes for introducing a respective first and second gas into the plasma reactor therethrough are arranged alternately, the first pipes extending from an inlet of the reactor to a plasma initiation region; a plasma reaction part having an ICP coil wound therearound in which the particles are formed as the gases introduced through the respective pipes undergo a plasma reaction; and a collection part for collecting the particles. The apparatus can fully mix the gases introduced through the first gas supply pipes, thus allowing for uniform plasma reaction between the first and second gas, minimizing plasma expansion to increase plasma density within short retention time, easily controlling the size distribution by quenching and capturing nanoparticles, and improving the production yield by preventing the secondary aggregation of particles with cooling gas.

Abstract: Disclosed is a method of forming a nitrogen-doped porous graphene envelope. The method of forming the nitrogen-doped porous graphene envelope includes dissolving a nitrogen precursor in an organic precursor and then vaporizing the resulting precursor to thus simultaneously synthesize the graphene envelope and perform nitrogen doping in a single step.

Abstract: Provided is a method of disassembling a photovoltaic module. The method includes: applying heat to the photovoltaic module in an oxidizing atmosphere; removing an insulating protective layer wrapping a photovoltaic cell of the photovoltaic module; and obtaining the photovoltaic cell of the photovoltaic module.

Abstract: An apparatus for producing Si nanoparticles using microwave plasma and a method of producing Si nanoparticles using the same are disclosed.

Abstract: Disclosed herein is an apparatus for manufacturing silicon-based nanoparticles such as Si—C composite and SiOx using plasmas. An apparatus for manufacturing silicon-based nanoparticles in accordance with one embodiment of the present disclosure comprises a reaction chamber for providing a reaction space; a plasma torch for generating plasma to decompose silicon (Si) precursors and produce Si particles, provided on an upper portion of the reaction chamber; a cooling part for cooling Si particles supplied into the reaction chamber, provided within the reaction chamber; and a carbon material supplying part for supplying carbonaceous materials or carbon precursors into the reaction chamber.

Abstract: Disclosed is a wafer slicing apparatus which cuts a silicon ingot to fabricate a silicon wafer, and more specifically, a silicon wafer slicing apparatus cutting the silicon ingot using wire discharge machining is disclosed. The present invention provides a silicon wafer slicing apparatus using wire discharge machining comprising: a water tank which contains an electrolyte; a cutting wire which has a cutting section dipped into the water tank and is transferred by a wire driving means; an ingot transferring unit which includes an electrode on which a silicon ingot, an object to be cut, is fixed, and moves the silicon ingot up and down within the cutting section of the cutting wire; an electrolyte circulating means which circulates and refines the electrolyte stored in the water tank; and a power supply unit which supplies a source voltage to the electrode of the ingot transferring unit and the cutting wire.

Abstract: There is disclosed that a MOx nanostructure manufacturing apparatus and a manufacturing method thereof can not only supply a reaction gas more effectively to the surface of a molten metal with ease by injecting a carrier gas to the surface of the molten metal above a graphite crucible as well as bringing the reaction gas in the lower side of the graphite crucible, but also maximize volatilization rates through an inflow of the reaction gas from the lower portion toward the upper of the graphite crucible.

Abstract: Disclosed herein are a SiOx nanoparticle manufacturing apparatus that can not only manufacture a SiOx nanoparticle in large quantities but also prevent a silicon melt residue from being stuck and solidified on an inner bottom surface of a crucible by designing a sliding type tapping structure, and a SiOx nanoparticle manufacturing method using the same.

Abstract: The present disclosure provides ?-SiAlON phosphors, a method of preparing the same, and an LED chip package using the same. The method includes weighing and mixing raw materials of Ca0.8-xRexAlaySi12-yO1.2N14.8 (Re is a rare-earth element, 0?x?0.2, 2.6?y?3.0, and 0.6?a?0.95), and sintering the mixed raw materials via normal pressure sintering to prepare phosphors having a composition of Ca0.8-xRexAlaySi12-yO1.2N14.8.

Abstract: A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.