Patents by Inventor Bo-Yun Jang

Bo-Yun Jang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10541407
    Abstract: The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.
    Type: Grant
    Filed: August 6, 2013
    Date of Patent: January 21, 2020
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Bo-Yun Jang, Jin-Seok Lee, Joon-Soo Kim
  • Patent number: 10052703
    Abstract: Disclosed is a wafer slicing apparatus which cuts a silicon ingot to fabricate a silicon wafer, and more specifically, a silicon wafer slicing apparatus cutting the silicon ingot using wire discharge machining is disclosed. The present invention provides a silicon wafer slicing apparatus using wire discharge machining comprising: a water tank which contains an electrolyte; a cutting wire which has a cutting section dipped into the water tank and is transferred by a wire driving means; an ingot transferring unit which includes an electrode on which a silicon ingot, an object to be cut, is fixed, and moves the silicon ingot up and down within the cutting section of the cutting wire; an electrolyte circulating means which circulates and refines the electrolyte stored in the water tank; and a power supply unit which supplies a source voltage to the electrode of the ingot transferring unit and the cutting wire.
    Type: Grant
    Filed: July 15, 2015
    Date of Patent: August 21, 2018
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Bo-Yun Jang, Sun-Ho Choi, Hee-Eun Song
  • Patent number: 10014523
    Abstract: There is disclosed that a MOx nanostructure manufacturing apparatus and a manufacturing method thereof can not only supply a reaction gas more effectively to the surface of a molten metal with ease by injecting a carrier gas to the surface of the molten metal above a graphite crucible as well as bringing the reaction gas in the lower side of the graphite crucible, but also maximize volatilization rates through an inflow of the reaction gas from the lower portion toward the upper of the graphite crucible.
    Type: Grant
    Filed: February 13, 2013
    Date of Patent: July 3, 2018
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Bo-Yun Jang, Joon-Soo Kim, Jin-Seok Lee
  • Patent number: 9975782
    Abstract: Disclosed herein are a SiOx nanoparticle manufacturing apparatus that can not only manufacture a SiOx nanoparticle in large quantities but also prevent a silicon melt residue from being stuck and solidified on an inner bottom surface of a crucible by designing a sliding type tapping structure, and a SiOx nanoparticle manufacturing method using the same.
    Type: Grant
    Filed: February 13, 2013
    Date of Patent: May 22, 2018
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Joon-Soo Kim, Bo-Yun Jang, Jin-Seok Lee
  • Publication number: 20180133928
    Abstract: Provided are a silicon ingot slicing apparatus capable of slicing silicon ingots in various forms such as blocks or wafers using microbubbles and wire electric discharge machining.
    Type: Application
    Filed: May 2, 2017
    Publication date: May 17, 2018
    Inventors: Bo-Yun JANG, Joon-Soo KIM, Hui-Chan MOON, Sun-Ho CHOI
  • Patent number: 9947926
    Abstract: Disclosed is a method of forming a nitrogen-doped porous graphene envelope. The method of forming the nitrogen-doped porous graphene envelope includes dissolving a nitrogen precursor in an organic precursor and then vaporizing the resulting precursor to thus simultaneously synthesize the graphene envelope and perform nitrogen doping in a single step.
    Type: Grant
    Filed: May 26, 2016
    Date of Patent: April 17, 2018
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Hee-yeon Kim, Bo-yun Jang, Guk Hyeon Kwon
  • Patent number: 9802826
    Abstract: An apparatus for producing silicon nanoparticles using ICP includes a gas supply part in which first and second pipes for introducing a respective first and second gas into the plasma reactor therethrough are arranged alternately, the first pipes extending from an inlet of the reactor to a plasma initiation region; a plasma reaction part having an ICP coil wound therearound in which the particles are formed as the gases introduced through the respective pipes undergo a plasma reaction; and a collection part for collecting the particles. The apparatus can fully mix the gases introduced through the first gas supply pipes, thus allowing for uniform plasma reaction between the first and second gas, minimizing plasma expansion to increase plasma density within short retention time, easily controlling the size distribution by quenching and capturing nanoparticles, and improving the production yield by preventing the secondary aggregation of particles with cooling gas.
    Type: Grant
    Filed: November 25, 2013
    Date of Patent: October 31, 2017
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Bo-Yun Jang, Joon-Soo Kim, Hee-Eun Song
  • Publication number: 20160362302
    Abstract: An apparatus for producing silicon nanoparticles using ICP includes a gas supply part in which first and second pipes for introducing a respective first and second gas into the plasma reactor therethrough are arranged alternately, the first pipes extending from an inlet of the reactor to a plasma initiation region; a plasma reaction part having an ICP coil wound therearound in which the particles are formed as the gases introduced through the respective pipes undergo a plasma reaction; and a collection part for collecting the particles. The apparatus can fully mix the gases introduced through the first gas supply pipes, thus allowing for uniform plasma reaction between the first and second gas, minimizing plasma expansion to increase plasma density within short retention time, easily controlling the size distribution by quenching and capturing nanoparticles, and improving the production yield by preventing the secondary aggregation of particles with cooling gas.
    Type: Application
    Filed: November 25, 2013
    Publication date: December 15, 2016
    Inventors: Bo-Yun JANG, Joon-Soo KIM, Hee-Eun SONG
  • Publication number: 20160346769
    Abstract: Disclosed is a method of forming a nitrogen-doped porous graphene envelope. The method of forming the nitrogen-doped porous graphene envelope includes dissolving a nitrogen precursor in an organic precursor and then vaporizing the resulting precursor to thus simultaneously synthesize the graphene envelope and perform nitrogen doping in a single step.
    Type: Application
    Filed: May 26, 2016
    Publication date: December 1, 2016
    Applicant: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Hee-yeon KIM, Bo-yun JANG, Guk Hyeon KWON
  • Patent number: 9455367
    Abstract: Provided is a method of disassembling a photovoltaic module. The method includes: applying heat to the photovoltaic module in an oxidizing atmosphere; removing an insulating protective layer wrapping a photovoltaic cell of the photovoltaic module; and obtaining the photovoltaic cell of the photovoltaic module.
    Type: Grant
    Filed: October 1, 2014
    Date of Patent: September 27, 2016
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jin Seok Lee, Young Soo Ahn, Bo Yun Jang, Joon Soo Kim, Gi Hwan Kang
  • Publication number: 20160152480
    Abstract: An apparatus for producing Si nanoparticles using microwave plasma and a method of producing Si nanoparticles using the same are disclosed.
    Type: Application
    Filed: May 14, 2015
    Publication date: June 2, 2016
    Inventors: Bo-Yun JANG, Joon-Soo KIM, Jin-Seok LEE, Sun-Ho CHOI, Jeong-Boon KOO
  • Publication number: 20160020463
    Abstract: There is disclosed that a MOx nanostructure manufacturing apparatus and a manufacturing method thereof can not only supply a reaction gas more effectively to the surface of a molten metal with ease by injecting a carrier gas to the surface of the molten metal above a graphite crucible as well as bringing the reaction gas in the lower side of the graphite crucible, but also maximize volatilization rates through an inflow of the reaction gas from the lower portion toward the upper of the graphite crucible.
    Type: Application
    Filed: February 13, 2013
    Publication date: January 21, 2016
    Inventors: Bo-Yun JANG, Joon-Soo KIM, Jin-Seok LEE
  • Publication number: 20160016143
    Abstract: Disclosed herein is an apparatus for manufacturing silicon-based nanoparticles such as Si—C composite and SiOx using plasmas. An apparatus for manufacturing silicon-based nanoparticles in accordance with one embodiment of the present disclosure comprises a reaction chamber for providing a reaction space; a plasma torch for generating plasma to decompose silicon (Si) precursors and produce Si particles, provided on an upper portion of the reaction chamber; a cooling part for cooling Si particles supplied into the reaction chamber, provided within the reaction chamber; and a carbon material supplying part for supplying carbonaceous materials or carbon precursors into the reaction chamber.
    Type: Application
    Filed: July 15, 2015
    Publication date: January 21, 2016
    Inventors: Bo-Yun JANG, Jin-Seok LEE, Joon-Soo KIM, Jeong-Boon KOO
  • Publication number: 20160016243
    Abstract: Disclosed is a wafer slicing apparatus which cuts a silicon ingot to fabricate a silicon wafer, and more specifically, a silicon wafer slicing apparatus cutting the silicon ingot using wire discharge machining is disclosed. The present invention provides a silicon wafer slicing apparatus using wire discharge machining comprising: a water tank which contains an electrolyte; a cutting wire which has a cutting section dipped into the water tank and is transferred by a wire driving means; an ingot transferring unit which includes an electrode on which a silicon ingot, an object to be cut, is fixed, and moves the silicon ingot up and down within the cutting section of the cutting wire; an electrolyte circulating means which circulates and refines the electrolyte stored in the water tank; and a power supply unit which supplies a source voltage to the electrode of the ingot transferring unit and the cutting wire.
    Type: Application
    Filed: July 15, 2015
    Publication date: January 21, 2016
    Inventors: Bo-Yun JANG, Sun-Ho CHOI, Hee-Eun SONG
  • Publication number: 20160002055
    Abstract: Disclosed herein are a SiOx nanoparticle manufacturing apparatus that can not only manufacture a SiOx nanoparticle in large quantities but also prevent a silicon melt residue from being stuck and solidified on an inner bottom surface of a crucible by designing a sliding type tapping structure, and a SiOx nanoparticle manufacturing method using the same.
    Type: Application
    Filed: February 13, 2013
    Publication date: January 7, 2016
    Inventors: Joon-Soo KIM, Bo-Yun JANG, Jin-Seok LEE
  • Patent number: 9127197
    Abstract: The present disclosure provides ?-SiAlON phosphors, a method of preparing the same, and an LED chip package using the same. The method includes weighing and mixing raw materials of Ca0.8-xRexAlaySi12-yO1.2N14.8 (Re is a rare-earth element, 0?x?0.2, 2.6?y?3.0, and 0.6?a?0.95), and sintering the mixed raw materials via normal pressure sintering to prepare phosphors having a composition of Ca0.8-xRexAlaySi12-yO1.2N14.8.
    Type: Grant
    Filed: October 14, 2011
    Date of Patent: September 8, 2015
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Bo-Yun Jang, Sung-Soon Park, Joo-Seok Park
  • Patent number: 9096946
    Abstract: A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.
    Type: Grant
    Filed: November 25, 2011
    Date of Patent: August 4, 2015
    Assignee: Korea Institute of Energy Research
    Inventors: Jin Seok Lee, Bo Yun Jang, Young Soo Ahn
  • Patent number: 9040010
    Abstract: The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.
    Type: Grant
    Filed: October 6, 2011
    Date of Patent: May 26, 2015
    Assignee: KOREA INSTITUTE OF ENERGY RESEARCH
    Inventors: Jin-Seok Lee, Bo-Yun Jang, Young-Soo Ahn
  • Patent number: 9001863
    Abstract: A graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surround by an induction coil, wherein a plurality of first slits are vertically formed through the outer wall and an inner wall of the crucible, and a plurality of second slits are vertically formed from an edge of the disc-shaped bottom of the crucible toward a center of the bottom.
    Type: Grant
    Filed: November 17, 2008
    Date of Patent: April 7, 2015
    Assignee: Korea Institute of Energy Research
    Inventors: Bo Yun Jang, Young Soo Ahn, Joon Soo Kim, Sang Hyun Park, Dong Kook Kim, Gwon Jong Yu
  • Patent number: 8997524
    Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.
    Type: Grant
    Filed: May 4, 2012
    Date of Patent: April 7, 2015
    Assignee: Korea Institute of Energy Research
    Inventors: Bo Yun Jang, Jin Seok Lee, Joon Soo Kim, Young Soo Ahn