Abstract: The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

Abstract: A graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surround by an induction coil, wherein a plurality of first slits are vertically formed through the outer wall and an inner wall of the crucible, and a plurality of second slits are vertically formed from an edge of the disc-shaped bottom of the crucible toward a center of the bottom.

Abstract: Provided is a method of disassembling a photovoltaic module. The method includes: applying heat to the photovoltaic module in an oxidizing atmosphere; removing an insulating protective layer wrapping a photovoltaic cell of the photovoltaic module; and obtaining the photovoltaic cell of the photovoltaic module.

Abstract: Disclosed is an apparatus for preparing silicon nanoparticles. The apparatus includes a corona discharge section charging silicon nanoparticles to exhibit unipolarity in order to prevent agglomeration of the silicon nanoparticles after the silicon nanoparticles are generated from an injected gas by plasma reaction of an inductively coupled plasma (ICP) coil. The apparatus may facilitate grain size control of silicon nanoparticles while improving discharge performance of a mesh filter for collection of generated nanoparticles by preventing agglomeration of the silicon nanoparticles generated by plasma reaction using inductively coupled plasma (ICP), and may permit replacement of the mesh filter even during operation of the apparatus, thereby improving productivity while reducing manufacturing costs.

Abstract: The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.

Abstract: Disclosed herein are a graphite crucible for electromagnetic induction-based silicon melting and an apparatus for silicon melting/refining using the same, which performs a melting operation by a combination of indirect melting and direct melting. The crucible is formed of a graphite material and includes a cylindrical body having an open upper part through which a silicon raw material is charged into the crucible, and an outer wall surrounded by an induction coil, wherein a plurality of slits are vertically formed through the outer wall and an inner wall of the crucible such that an electromagnetic force created by an electric current flowing in the induction coil acts toward an inner center of the crucible to prevent a silicon melt from contacting the inner wall of the crucible.

Abstract: Disclosed is an apparatus for preparing silicon nanoparticles. The apparatus includes a corona discharge section charging silicon nanoparticles to exhibit unipolarity in order to prevent agglomeration of the silicon nanoparticles after the silicon nanoparticles are generated from an injected gas by plasma reaction of an inductively coupled plasma (ICP) coil. The apparatus may facilitate grain size control of silicon nanoparticles while improving discharge performance of a mesh filter for collection of generated nanoparticles by preventing agglomeration of the silicon nanoparticles generated by plasma reaction using inductively coupled plasma (ICP), and may permit replacement of the mesh filter even during operation of the apparatus, thereby improving productivity while reducing manufacturing costs.

Abstract: Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.

Abstract: The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.

Abstract: Methods and apparatus for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit which is placed on a first electron beam-irradiating region corresponding to the first electron gun and to which powdery raw silicon is fed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun. The unidirectional solidification unit is provided therein with a start block driven in a downward direction to transfer molten silicon in the downward direction and is formed at a lower side thereof with a cooling channel. The start block includes a dummy bar having a silicon button joined to an upper portion of the dummy bar.

Abstract: Apparatus and method for manufacturing high purity polysilicon. The apparatus includes a vacuum chamber maintaining a vacuum atmosphere; first and second electron guns disposed at an upper side of the vacuum chamber to irradiate electron beams into the vacuum chamber; a silicon melting unit placed on a first electron beam-irradiating region corresponding to the first electron gun and in which powdery raw silicon is placed and melted by the first electron beam; and a unidirectional solidification unit placed on a second electron beam-irradiating region corresponding to the second electron gun and connected to the silicon melting unit via a runner. The unidirectional solidification unit is formed at a lower part thereof with a cooling channel and is provided therein with a start block driven in a downward direction.

Abstract: There is disclosed an apparatus for manufacturing a silicon substrate including a crucible part, a molding part extended from an outlet of the crucible part, the molding part comprising a molding space where a silicon substrate is formed, and a dummy bar inserted in the molding space from a predetermined portion of the molding part, wherein the dummy bar is formed of a single-crystalline material.

Abstract: The present disclosure provides a graphite crucible induction-based silicon melting. The graphite crucible comprises a cylindrical body having a plurality of slits which is formed through an outer wall and an inner wall of the cylindrical body and a bottom part connected with an edge of the cylindrical body to seal an end of the cylindrical body.

Abstract: The present disclosure relates to an apparatus for producing silicon nanocrystals, which can minimize plasma diffusion by finely adjusting a plasma region created by an ICP coil. The apparatus includes a reactor having an ICP coil wound around an outer wall thereof and a tube inserted into the reactor, wherein a primary gas for forming silicon nanocrystals and a secondary gas for surface reaction of the silicon nanocrystals are separately supplied to the reactor through an inner side and an outer side of the tube, respectively.

Abstract: The present disclosure provides an apparatus for manufacturing a silicon substrate for solar cells using continuous casting, which can improve quality, productivity and energy conversion efficiency of the silicon substrate. The apparatus includes a crucible unit configured to receive raw silicon and having a discharge port, a heating unit provided to an outer wall and an external bottom surface of the crucible unit and heating the crucible unit to form molten silicon, a casting unit casting the molten silicon into a silicon substrate, a cooling unit rapidly cooling the silicon substrate, and a transfer unit disposed at one end of the cooling unit and transferring the silicon substrate. The casting unit includes a casting unit body having a casting space defined therein to be horizontally connected to the discharge port, and an assistant heating mechanism that preheats the casting unit body to control a solidification temperature of the silicon substrate.

Abstract: A dual crucible for silicon melting and a manufacturing apparatus of a silicon thin film including the same are disclosed. The dual crucible for the silicon melting includes a graphite crucible formed in a container shape with an open top and a bottom having an outlet part formed therein to exhaust silicon melt, the graphite crucible comprising a slope part configured to connect the outlet part and an inner wall with each other, with a predetermined slope with respect to a top surface of the outlet part, and a quartz crucible insertedly coupled to the graphite crucible, with being formed in a corresponding shape to the graphite crucible, the quartz crucible having a silicon base material charged therein.

Abstract: The present disclosure provides an apparatus for manufacturing a single crystal silicon ingot having a dual crucible for silicon melting which can be reused due to a dual crucible structure. The apparatus includes a dual crucible for silicon melting, into which raw silicon is charged, a crucible heater heating the dual crucible to melt the raw silicon into molten silicon, a crucible drive unit controlling rotation and elevation of the dual crucible, and a pull-up drive unit disposed above the dual crucible and pulling up a seed crystal dipped in the molten silicon to produce a silicon ingot. The dual crucible has a container shape open at an upper side thereof, and includes a graphite crucible having an inclined surface connecting an inner bottom and an inner wall, and a quartz crucible inserted into the graphite crucible and receiving the raw silicon charged into the dual crucible.

Abstract: The present disclosure provides ?-SiAlON phosphors, a method of preparing the same, and an LED chip package using the same. The method includes weighing and mixing raw materials of Ca0.8-xRexAlaySi12-yO1.2N14.8 (Re is a rare-earth element, 0?x?0.2, 2.6?y?3.0, and 0.6?a?0.95), and sintering the mixed raw materials via normal pressure sintering to prepare phosphors having a composition of Ca0.8-xRexAlaySi12-yO1.2N14.8.

Abstract: The present disclosure provides a method of producing high purity SiOx nanoparticles with excellent volatility and an apparatus for producing the same, which enables mass production of SiOx nanoparticles by melting silicon through induction heating and injecting gas to a surface of the molten silicon. The apparatus includes a vacuum chamber, a graphite crucible into which raw silicon is charged, the graphite crucible being mounted inside the vacuum chamber, an induction melting part which forms molten silicon by induction heating of the silicon material received in the graphite crucible, a gas injector which injects a gas into the graphite crucible to be brought into direct contact with a surface of the molten silicon, and a collector disposed above the graphite crucible and collecting SiOx vapor produced by reaction between the molten silicon and the injected gas.