Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements comprise at least two measurements with different polarization states of incident light, each measurement including illuminating eh measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between eth diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements comprise at least two measurements with different polarization states of incident light, each measurement including illuminating eh measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between eth diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

Abstract: Alignment of layers during manufacture of a multi-layer sample is controlled by applying optical measurements to a measurement site in the sample. The measurement site includes two diffractive structures located one above the other in two different layers, respectively. The optical measurements comprise at least two measurements with different polarization states of incident light, each measurement including illuminating eh measurement site so as to illuminate one of the diffractive structures through the other. The diffraction properties of the measurement site are indicative of a lateral shift between eth diffractive structures. The diffraction properties detected are analyzed for the different polarization states of the incident light to determine an existing lateral shift between the layers.

Abstract: A method and a system for optical measuring in a structure having a pattern in the form of spaced-apart parallel elongated regions of optical properties different from that of spaces between said regions. The system comprises a broadband illuminator (8) for generating incident radiation, a spectrophotometer arrangement (30) for detecting a spectral response of the structure to the incident radiation, and an optical arrangement (2) for directing the incident light to the structure and collecting the response of the structure, said optical arrangement (2) comprising a numerical aperture (32) selectively limiting the range of at least one of light incidence or collecting angles in direction substantially perpendicular to longitudinal axes of said elongated regions of the pattern.

Abstract: An optical system for use in measurements in a sample comprising a light source (102) operable to produce an incident light beam propagating in a certain direction towards the sample (S) through an illumination channel (IC), a detector unit (104) for collecting light coming from the sample through a detection channel (DC), and generating data indicative of the collected light, a light directing assembly (106) operable to direct the incident beam onto a certain location on the sample's plane with a plurality of incident angles, and to direct light returned from the illuminated location to the detector unit (104), the light directing assembly (106) comprising a plurality of beam deflector elements (108 A-D), at least one of the deflector elements being movable and position of said at least one movable deflector element defining one of the selected incident angles.

Abstract: The method for controlling layers alignment in a multi-layer sample (10), such a semiconductors wafer based on detecting a diffraction efficiency of radiation diffracted from the patterned structures (12, 14) located one above the other in two different layers of the sample.

Abstract: A method and system for optical measurements of line edge roughness (LER) of patterned structures based on illuminating the structure with incident radiation and detecting a spectral response of the structure, and further applying software and/or hardware utilities for deriving information representative of said line edge roughness parameter/s from said spectral response of the structure.

Abstract: A measurement method and system configured to determine parameters of a structure during production, the system including: a stage configured to support the structure during measurements; a measuring unit coupled to the stage; and a processor coupled to the measuring unit. The measuring unit includes: an illumination system configured to direct incident light of substantially broad wavelengths band toward a surface of the structure during measurements; and a detection system coupled to the illumination system and configured to detect light propagating from the surface of the structure during measurements. The measuring unit is configured to generate one or more output signals in response to the detected light during measurements. The processor is configured to determine the parameters of the structure from the one or more output signals during measurements. The parameters include a critical dimension of the structure and a layer characteristic of the structure.

Abstract: A method is presented for controlling a process to be applied to a patterned structure in a production run. Reference data is provided being representative of diffraction signatures corresponding to a group of different fields in a structure similar to the patterned structure in the production line, and of a control window for the process parameters corresponding to a signature representative of desired process results. The group of different fields is characterized by different process parameters used in the manufacture of these fields. The method utilizes an expert system trained to be responsive to input data representative of a diffraction signature to provide output data representative of corresponding effective parameters of the process. Optical measurements are applied to different sites on the patterned structure in the production line to obtain diffraction signatures of thereof and generate corresponding measured data.

Abstract: A method and system are presented for determing a line profile in a patterned structure, aimed at controlling a process of manufacture of the structure. The patterned structure comprises a plurality of different layers, the pattern in the structure being formed by patterned regions and un-patterned regions. At least first and second measurements are carried out, each utilizing illumination of the structure with a broad wavelengths band of incident light directed on the structure at a certain angle of incidence, detection of spectral characteristics of light returned from the structure, and generation of measured data representative thereof. The measured data obtained with the first measurement is analyzed, and at least one parameter of the structure is thereby determined. Then, this determined parameter is utilized, while analyzing the measured data obtained with the second measurements enabling the determination of the profile of the structure.

Abstract: A measurement method and system are presented for measuring parameters of a patterned structure. Scatterometry and SEM measurements are applied to the structure, measured data indicative of, respectively, the structure parameters and lateral pattern dimensions of the structure are generated. The entire measured data are analyzed so as to enable using measurement results of either one of the scatterometry and SEM measurements for optimizing the other measurement results.

Abstract: The method for controlling layers alignment in a multi-layer sample (10), such a semiconductors wafer based on detecting a diffraction efficiency of radiation diffracted from the patterned structures (12, 14) located one above the other in two different layers of the sample.

Abstract: A measurement method and system are presented for measuring parameters of a patterned structure. Scatterometry and SEM measurements are applied to the structure, measured data indicative of, respectively, the structure parameters and lateral pattern dimensions of the structure are generated. The entire measured data are analyzed so as to enable using measurement results of either one of the scatterometry and SEM measurements for optimizing the other measurement results.

Abstract: A method is presented for controlling a process to be applied to a patterned structure in a production run. Reference data is provided being representative of diffraction signatures corresponding to a group of different fields in a structure similar to the patterned structure in the production line, and of a control window for the process parameters corresponding to a signature representative of desired process results. The group of different fields is characterized by different process parameters used in the manufacture of these fields. The method utilizes an expert system trained to be responsive to input data representative of a diffraction signature to provide output data representative of corresponding effective parameters of the process. Optical measurements are applied to different sites on the patterned structure in the production line to obtain diffraction signatures of thereof and generate corresponding measured data.

Abstract: A hybrid gun for launching a projectile by a combined propulsion effect of a chemical propellant and electrothermal energy. The gun comprises a breech-associated electrothermal propulsion energy injector having a plasma beam generator and a tubular chamber holding a light working fluid that during the travel of the projectile in the barrel produces at the rear of the projectile a light gaseous buffer zone. Optionally the gun may have in addition one or more electrothermal propulsion energy injectors mounted on the barrel.There is also provided ammunition for use with a hybrid gun having a chemical propellant holding cartridge designed for ignition by working fluid injected by the breech associated electrothermal propulsion energy injector.