Abstract: In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the substrate using a reaction gas while increasing a temperature of the reaction chamber from the first temperature to a second temperature under a second pressure. Additionally, the oxide layer is nitrified in the reaction chamber to form the oxynitride layer on the substrate. When the oxide layer and/or the oxynitride layer are formed on the substrate, minute patterns of a semiconductor device, for example a DRAM device, an SRAM device or an LOGIC device may be easily formed on the oxide layer or the oxynitride layer.

Abstract: A pad structure, a method of forming a pad structure, a semiconductor device having a pad structure and a method of manufacturing a semiconductor device are disclosed. The pad structure may include a first pad, a second pad, a third pad and/or a spacer. The first pad may contact a contact region on a substrate. The first pad may include doped polysilicon. The second pad may contact the first pad. The second pad may include a metal silicide or a metal silicongermanium. The third pad may contact the second pad. The third pad may include a conductive material (e.g., doped polysilicon, a metal or a metal nitride). The spacer may be formed on sidewalls of the second and the third pads.

Abstract: The present invention is related to an image acquisition/output apparatus and a picture system for ophthalmic operation using the same. The picture system for ophthalmic operation according to the present invention includes a near-infrared microscope for irradiating an affect part through an objective lens with near-infrared ray emitted from a light source, and transmitting near-infrared images formed by the objective lens to a first and a second ocular lenses, an image acquisition apparatus for converting near-infrared images transmitted to the first and the second ocular lenses into a first and a second electrical image signals for output, and a display apparatus for receiving the first and the second image signals and outputting them in three-dimensional images.

Abstract: Example embodiments of the present invention relate to methods of manufacturing a semiconductor device. Other example embodiments of the present invention relate to methods of manufacturing a semiconductor device having a gate electrode. In the method of manufacturing the semiconductor device, a gate electrode may be formed on a semiconductor substrate. Damage in the semiconductor substrate and a sidewall of the gate electrode may be cured, or repaired, by a radical re-oxidation process to form an oxide layer on the semiconductor substrate and the gate electrode.

Abstract: A tunnel dielectric layer is formed on a semiconductor device. A floating gate layer is formed on the tunnel dielectric layer. An intergate dielectric layer (ONO layer) is formed on the floating gate layer. An in-situ doped silicon is deposited on the intergate dielectric layer to form a control gate layer and then, an annealing is carried out. The control gate layer, the intergate dielectric layer, and the floating gate layer are patterned through a photolithographic process. The phase transformation of the control gate silicon layer does not occur during a subsequent gate oxidation process to reduce the thickness variation of the ONO layer, thereby improving endurance and bake retention characteristics of the semiconductor device.

Abstract: A method of forming a gate structure of a semiconductor device includes forming a gate insulation film and a polysilicon film on a semiconductor substrate where an active region and a field region are defined, followed by forming a buffer layer on the polysilicon film to minimize damage to the polysilicon film during a subsequent ion implantation process. The polysilicon film is made electrically conductive by the implanting of impurities into the polysilicon film. Gate patterns are then formed by etching the conductive polysilicon film and the gate insulation film. Defects, such as active pitting, associated with dual electrodes are effectively prevented because the polysilicon film is protected during the ion implanting process.

Abstract: An insulation layer containing bonds of Si—N may be formed on a substrate. An electrode may be formed on the insulation layer. The substrate and the insulation layer exposed by the electrode may be treated with free radicals, which may improve the insulation capacity of the insulation layer and/or partially oxidize a surface of the substrate. The bonds of Si—N may be transformed into bonds of Si—O such that damage to the substrate and the insulation layer may be cured.

Abstract: Disclosed is a method of manufacturing a MOS transistor having an enhanced reliability. A passivation layer is formed on a gate electrode and on a substrate to prevent a generation of a recess on the substrate. After a mask pattern is formed on the substrate for masking a portion of the substrate, impurities are implanted into an exposed portion of the substrate to form source and drain regions. The substrate is rinsed so that the passivation layer or a recess-prevention layer is substantially entirely or partially removed while the mask pattern is substantially completely removed, thereby forming the MOS transistor. Therefore, the generation of the recess in the source and drain region of the substrate can be prevented due to the passivation layer during rinsing of the substrate.

Abstract: A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and performing a re-oxidation process for curing damage of the semiconductor substrate and/or a sidewall of the conductive layer pattern, when the preliminary gate electrode is formed by forming an oxide layer on an outer surface of the preliminary gate electrode and on the semiconductor substrate, by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased; and the semiconductor device comprising a preliminary gate electrode formed on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and a re-oxidized semiconductor substrate and/o

Abstract: A method of forming a high dielectric film using atomic layer deposition (ALD), and a method of manufacturing a capacitor having the high dielectric film, include supplying a precursor containing a metal element to a semiconductor substrate and purging a reactor; supplying an oxidizer and purging the reactor; and supplying a reaction source containing nitrogen and purging the reactor.

Abstract: In methods of forming an oxide layer and an oxynitride layer, a substrate is loaded into a reaction chamber having a first pressure and a first temperature. The oxide layer is formed on the substrate using a reaction gas while increasing a temperature of the reaction chamber from the first temperature to a second temperature under a second pressure. Additionally, the oxide layer is nitrified in the reaction chamber to form the oxynitride layer on the substrate. When the oxide layer and/or the oxynitride layer are formed on the substrate, minute patterns of a semiconductor device, for example a DRAM device, an SRAM device or an LOGIC device may be easily formed on the oxide layer or the oxynitride layer.

Abstract: A method of forming a gate structure of a semiconductor device includes forming a gate insulation film and a polysilicon film on a semiconductor substrate where an active region and a field region are defined, followed by forming a buffer layer on the polysilicon film to minimize damage to the polysilicon film during a subsequent ion implantation process. The polysilicon film is made electrically conductive by the implanting of impurities into the polysilicon film. Gate patterns are then formed by etching the conductive polysilicon film and the gate insulation film. Defects, such as active pitting, associated with dual electrodes are effectively prevented because the polysilicon film is protected during the ion implanting process.

Abstract: A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and performing a re-oxidation process for curing damage of the semiconductor substrate and/or a sidewall of the conductive layer pattern, when the preliminary gate electrode is formed by forming an oxide layer on an outer surface of the preliminary gate electrode and on the semiconductor substrate, by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased; and the semiconductor device comprising a preliminary gate electrode formed on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and a re-oxidized semiconductor substrate and/o

Abstract: Disclosed is a method of manufacturing a MOS transistor having an enhanced reliability. A passivation layer is formed on a gate electrode and on a substrate to prevent a generation of a recess on the substrate. After a mask pattern is formed on the substrate for masking a portion of the substrate, impurities are implanted into an exposed portion of the substrate to form source and drain regions. The substrate is rinsed so that the passivation layer or a recess-prevention layer is substantially entirely or partially removed while the mask pattern is substantially completely removed, thereby forming the MOS transistor. Therefore, the generation of the recess in the source and drain region of the substrate can be prevented due to the passivation layer during rinsing of the substrate.

Abstract: A tunnel dielectric layer is formed on a semiconductor device. A floating gate layer is formed on the tunnel dielectric layer. An intergate dielectric layer (ONO layer) is formed on the floating gate layer. An in-situ doped silicon is deposited on the intergate dielectric layer to form a control gate layer and then, an annealing is carried out. The control gate layer, the intergate dielectric layer, and the floating gate layer are patterned through a photolithographic process. The phase transformation of the control gate silicon layer does not occur during a subsequent gate oxidation process to reduce the thickness variation of the ONO layer, thereby improving endurance and bake retention characteristics of the semiconductor device.

Abstract: A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and performing a re-oxidation process for curing damage of the semiconductor substrate and/or a sidewall of the conductive layer pattern, when the preliminary gate electrode is formed by forming an oxide layer on an outer surface of the preliminary gate electrode and on the semiconductor substrate, by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased; and the semiconductor device comprising a preliminary gate electrode formed on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and a re-oxidized semiconductor substrate and/o

Abstract: A semiconductor device and method of production are disclosed, the method including forming a preliminary gate electrode on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and performing a re-oxidation process for curing damage of the semiconductor substrate and/or a sidewall of the conductive layer pattern, when the preliminary gate electrode is formed by forming an oxide layer on an outer surface of the preliminary gate electrode and on the semiconductor substrate, by supplying an oxygen gas and a chlorine-including gas while restraining a thickness of the gate oxide layer pattern from being increased; and the semiconductor device comprising a preliminary gate electrode formed on a semiconductor substrate, the preliminary gate electrode including a gate oxide layer pattern and a conductive layer pattern stacked on the gate oxide layer pattern, and a re-oxidized semiconductor substrate and/o