Abstract: Disclosed is a sulfur-carbon composite, and a positive electrode for a lithium secondary battery and a lithium secondary battery including the same. More specifically, since the carbon contained in the sulfur-carbon composite includes carbon of various shapes and in particular, includes sheet-type carbon in a certain content, when the sulfur-carbon composite is applied as a positive electrode active material of a lithium secondary battery, the performance of the lithium secondary battery may be improved by preventing the leaching of sulfur and improving the reaction rate at the positive electrode.

Abstract: A device for preventing a submarine phenomenon in a fold and dive seat for a vehicle includes a seat cushion side frame, a seat back frame fastened to a rear end portion of the seat cushion side frame in a manner that is rotatable backward and forward, a seat cushion main-frame fastened between the seat cushion side frame and the seat back frame in a tiltable manner, and a dive link fastened by a hinge mechanism between a front end portion of the seat cushion main-frame and a front end portion of the seat cushion side frame, in which a stopper link rotatably mounted on the seat cushion side frame is rotated by an inertial force when a head-on collision occurs, and thus holds the dive link in place.

Abstract: A storage device having a multi drop structure is provided. The storage device comprises a storage controller configured to output a data signal, a first non-volatile memory configured to receive the data signal, a first wiring electrically connected to the storage controller and configured to transfer the data signal, a first termination module including a first impedance element that electrically connects the first wiring to at least one of a power voltage or a ground voltage, a second wiring electrically connected to the first wiring and configured to transfer the data signal to the first non-volatile memory, and a third wiring electrically connected to the first wiring and configured to transfer the data signal to the first termination module.

Abstract: The present disclosure relates to a force and complex vibration rendering system using a force feedback device and a wideband resonance actuator, and a method for providing force and complex vibration using the system.

Abstract: A substrate processing method, involving etching a silicon nitride layer selectively in a substrate where a silicon oxide layer and the silicon nitride layer are stacked, includes: wet-etching the silicon nitride layer with a phosphoric acid-based etching solution; and dry-etching a regrowth oxide, which is formed on a surface of the silicon oxide layer in the wet etching step, with an etching gas.

Abstract: The present disclosure relates to a crosslinkable compound, a composition containing the same for formation of a solid electrolyte, a method of preparing a solid electrolyte by using the composition, a solid electrolyte, and an electronic element including the solid electrolyte.

Abstract: A semiconductor device including an active region extending in a first direction on a substrate; a gate structure intersecting the active region and extending in a second direction on the substrate; and a source/drain region on the active region and at least one side of the gate structure, wherein the source/drain region includes a plurality of first epitaxial layers spaced apart from each other in the first direction, the plurality of first epitaxial layers including first impurities of a first conductivity type; and a second epitaxial layer filling a space between the plurality of first epitaxial layers, the second epitaxial layer including second impurities of the first conductivity type.

Abstract: A semiconductor memory device includes a stack structure including a plurality of layers vertically stacked on a substrate. Each of the plurality of layers includes a first dielectric layer, a semiconductor layer, and a second dielectric layer that are sequentially stacked, and a first conductive line in the second dielectric layer and extending in a first direction. The device also includes a second conductive line extending vertically through the stack structure, and a capacitor in the stack structure and spaced apart from the second conductive line. The semiconductor layer includes semiconductor patterns extending in a second direction intersecting the first direction between the first conductive line and the substrate. The second conductive line is between a pair of the semiconductor patterns adjacent to each other in the first direction. An end of each of the semiconductor patterns is electrically connected to a first electrode of the capacitor.

Abstract: The present disclosure relates to a positive electrode additive for a lithium secondary battery, and a positive electrode active material, a positive electrode and a lithium secondary battery including the same, and in particular, the positive electrode additive represented by Formula 1 is formed on a surface of a carbon material included in the positive electrode active material and is not dissolved in an electrolyte solution, which functions to electrically separate the positive electrode and a negative electrode, and accordingly, battery performance is enhanced by suppressing side reactions in the battery.

Abstract: Provided are a method of controlling safety of an Unmanned Aerial Vehicle (UAV) and a system for performing the method. The method of controlling the safety includes identifying a failure of a UAV for each of a plurality of mission performance operations of the UAV, based on status data of the UAV received in real time from the UAV and past flight performance data of a case where the UAV normally performs a mission and controlling safety of the UAV based on the failure for each of the plurality of mission performance operations and a risk level of the failure. The status data may include component operation status data of the UAV, power status data of the UAV, and communication connection status data of the UAV.

Abstract: Semiconductor memory devices are provided. A semiconductor memory device includes an isolation layer in a first trench and a first gate electrode portion on the isolation layer. The semiconductor memory device includes a second gate electrode portion in a second trench. In some embodiments, the second gate electrode portion is wider, in a direction, than the first gate electrode portion. Moreover, in some embodiments, an upper region of the second trench is spaced apart from the first trench by a greater distance, in the direction, than a lower region of the second trench. Related methods of forming semiconductor memory devices are also provided.

Abstract: A lithium secondary battery includes a cell stack having one or more unit cells. Each of the one or more unit cells includes a positive electrode, a negative electrode, and a separator between the positive electrode and the negative electrode. The lithium secondary battery includes a lithium nitrate holder in a solid state, an electrolyte solution, and a battery case. The cell stack, the lithium nitrate holder in the solid state, and the electrolyte solution are in the battery case.

Abstract: A semiconductor memory device may include a substrate, a bit line structure extending in one direction on the substrate, the bit line structure including a sidewall, a storage node contact on the sidewall of the bit line structure, first and second spacers between the sidewall of the bit line structure and the storage node contact, the first spacer separated from the second spacer by a space between the first spacer and the second spacer, an interlayer dielectric layer on the bit line structure, the interlayer dielectric layer including a bottom surface, a spacer capping pattern extending downward from the bottom surface of the interlayer dielectric layer toward the space between the first and second spacers, and a landing pad structure penetrating the interlayer dielectric layer, the landing pad structure coupled to the storage node contact.

Abstract: A semiconductor memory device includes word lines extending in a first direction on a semiconductor substrate, bit line structures crossing over the word lines and extending in a second direction intersecting the first direction, and contact pad structures between the word lines and between the bit line structures in plan view. A spacer structure extends between the bit line structures and the contact pad structures. The spacer structure includes a first air gap extending in the second direction along sidewalls of the bit line structures and a second air gap surrounding each of the contact pad structures and coupled to the first air gap.

Abstract: The present disclosure provides a method for determining the remaining capacity of a lithium-sulfur battery using a voltage drop value obtained by applying a constant current in an open-circuit state and a battery pack implementing the method.

Abstract: The present disclosure relates to a lithium secondary battery containing tellurium as an additive for a positive electrode and bis (2,2,2-trifluoroethyl)ether as an additive for an electrolyte solution, which has an effect of improving the lifetime characteristic of the lithium secondary battery.

Abstract: Semiconductor devices are provided. A semiconductor device includes a substrate. The semiconductor device includes a stack structure on the substrate. The stack structure includes a first insulating material and a second insulating material that is on the first insulating material. The semiconductor device includes a spacer that extends from a sidewall of the first insulating material of the stack structure to a portion of a sidewall of the second insulating material of the stack structure. Moreover, the semiconductor device includes a conductive line that is on the spacer. Methods of forming semiconductor devices are also provided.

Abstract: A method of forming a semiconductor device includes forming first sacrificial patterns on a lower structure, forming first remaining mask layers having a “U” shape between the first sacrificial patterns to be in contact with the first sacrificial patterns, forming first remaining mask patterns by pattering the first remaining mask layers, each of the first remaining mask patterns including a horizontal portion, parallel to an upper surface of the lower structure, and a vertical portion, perpendicular to the upper surface of the lower structure, forming second mask patterns spaced apart from the vertical portions of the first remaining mask patterns, removing the first sacrificial patterns remaining after forming the second mask patterns, and forming first mask patterns by etching the horizontal portions of the first remaining mask patterns.

Abstract: The present invention relates to a surface acoustic wave device package and a method of manufacturing the same, and more specifically, to a method of manufacturing a miniaturized surface acoustic wave device package.

Abstract: A semiconductor device includes a plurality of lower electrode structures disposed on a substrate, and a supporter pattern disposed between pairs of lower electrode structures of the plurality of lower electrode structures. The semiconductor device further includes a capacitor dielectric layer disposed on surfaces of each of the plurality of lower electrode structures and the supporter pattern, and an upper electrode disposed on the capacitor dielectric layer. The plurality of lower electrode structures includes a first lower electrode and a second lower electrode disposed on the first lower electrode and having a cylindrical shape. The first lower electrode has a pillar shape. The first lower electrode includes an insulating core. The insulating core is disposed in the first lower electrode. An outer side surface of the first lower electrode and an outer side surface of the second lower electrode are coplanar.