Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a dielectric layer, in a substrate, the dielectric layer including an electroless catalyst, wherein the electroless catalyst includes one or more of palladium, gold, silver, ruthenium, cobalt, copper, nickel, titanium, aluminum, lead, silicon, and tantalum; a first conductive trace having a first thickness in the dielectric layer, wherein the first thickness is between 4 um and 143 um; and a second conductive trace having a second thickness in the dielectric layer, wherein the second thickness is between 2 um and 141 um, wherein the first thickness is greater than the second thickness, and wherein the first conductive trace and the second conductive trace have sloped sidewalls.

Abstract: Embodiments disclosed herein include optical interconnects and methods of forming such optical interconnects. In an embodiment, the optical interconnect comprises a package substrate, where an optical waveguide is embedded in the package substrate. In an embodiment, a photonics integrated circuit (PIC) is over the package substrate, where the PIC comprises a laser that is configured to be optically coupled to the optical waveguide. In an embodiment, the optical interconnect further comprises a plasmonic junction between the laser and the optical waveguide.

Abstract: Embodiments disclosed herein include electronic packages with a ground plate embedded in the solder resist that extends over signal traces. In an embodiment, the electronic package comprises a substrate layer, a trace over the substrate layer, and a first pad over the substrate layer. In an embodiment, a solder resist is disposed over the trace and the first pad. In an embodiment a trench is formed into the solder resist, and the trench extends over the trace. In an embodiment, a conductive plate is disposed in the trench, and is electrically coupled to the first pad by a via that extends from a bottom surface of the trench through the solder resist.

Abstract: Microelectronic assemblies, and related devices and methods, are disclosed herein. For example, in some embodiments, a microelectronic assembly may include a substrate layer having a surface, wherein the substrate layer includes a photo-imageable dielectric (PID) and an electroless catalyst; a first conductive trace having a first thickness on the surface of the substrate layer; and a second conductive trace having a second thickness on the surface of the substrate layer, wherein the first thickness is greater than the second thickness.

Abstract: A magnetic material may be fabricated with a plurality of magnetic filler particles dispersed within a carrier material, wherein at last one of the magnetic filler particles may comprise a ferromagnetic core coated with an inert material to form a shell surrounding the ferromagnetic core. Such a coating may allow for the use of ferromagnetic materials for forming embedded inductors in package substrates without the risk of being incompatible with fabrication processes used to form these package substrates.

Abstract: Embodiments include package substrates and a method of forming the package substrates. A package substrate includes a dielectric having a cavity that has a footprint, a resistor embedded in the cavity of the dielectric, and a plurality of traces on the resistor, where a plurality of surfaces of the resistor are activated surfaces. The resistor may also have a plurality of sidewalls which may be activated sidewalls and tapered. The dielectric may include metallization particles/ions. The resistor may include resistive materials, such as nickel-phosphorus (NiP), aluminum-nitride (AlN), and/or titanium-nitride (TiN). The package substrate may further include a first resistor embedded adjacently to the resistor. The first resistor may have a first footprint of a first cavity that is different than the footprint of the cavity of the resistor. The resistor may have a resistance value that is thus different than a first resistance value of the first resistor.

Abstract: Embodiments include semiconductor packages and method of forming the semiconductor packages. A semiconductor package includes first waveguides over a package substrate. The first waveguides include first angled conductive layers, first transmission lines, and first cavities. The semiconductor package also includes a first dielectric over the first waveguides and package substrate, second waveguides over the first dielectric and first waveguides, and a second dielectric over the second waveguides and first dielectric. The second waveguides include second angled conductive layers, second transmission lines, and second cavities. The first angled conductive layers are positioned over the first transmission lines and package substrate having a first pattern of first triangular structures.

Abstract: Microelectronic assemblies, related devices and methods, are disclosed herein. In some embodiments, a microelectronic assembly may include a first die, having a first surface and an opposing second surface, in a first layer; a redistribution layer (RDL) on the first layer, wherein the RDL includes conductive vias having a greater width towards a first surface of the RDL and a smaller width towards an opposing second surface of the RDL; wherein the first surface of the RDL is electrically coupled to the second surface of the first die by first solder interconnects having a first solder; and a second die in a second layer on the RDL, wherein the second die is electrically coupled to the RDL by second solder interconnects having a second solder, wherein the second solder is different than the first solder.

Abstract: Embodiments herein relate to systems, apparatuses, or processes directed to an integrated optical coupler that may be used to optically couple a waveguide and a PIC. In embodiments, the integrated optical coupler may include an optical diffraction grating mechanism, an optical lens, and a Faraday rotator. In embodiments, the integrated optical coupler may at least partially within a housing. Other embodiments may be described and/or claimed.

Abstract: Disclosed herein are organic semiconductors using optical signaling on a microelectronics package and methods for manufacturing the same. The microelectronics packages may include a substrate, an acceptor, a donor, and a solder resist layer. The substrate may include a trace. The acceptor may be in electrical communication with the trace. The donor may be connected to the acceptor. The solder resist layer may be connected to the substrate and encapsulate a portion of at least the acceptor.

Abstract: A thin-film insulator comprises a first electrode over a substrate. A photo up-converting material is over the first electrode. A cured photo-imageable dielectric (PID) containing a high-k filler material is over the photo up-converting material, wherein the cured PID is less than 4 ?m in thickness, and a second electrode is over the cured PID.

Abstract: A substrate for an electronic device may include a first layer, a second layer, and may include a third layer. The first layer may include a capacitive material, and the capacitive material may be segmented into a first section, and a second section. Each of the first section and the second section may include a first surface and a second surface. The second layer may include a first conductor. The third layer may include a second conductor. The first surface of the second section of capacitive material may be directly coupled to the first conductor. The second surface of the second section of the capacitive material may be directly coupled to the second conductor. A first filler region may include a dielectric material and the first filler region may be located in a first gap between the first section of capacitive material and the second section of capacitive material.

Abstract: Embodiments include package substrates and method of forming the package substrates. A package substrate includes a first encapsulation layer over a substrate, and a second encapsulation layer below the substrate. The package substrate also includes a first interconnect and a second interconnect vertically in the first encapsulation layer, the second encapsulation layer, and the substrate. The first interconnect includes a first plated-through-hole (PTH) core, a first via, and a second via, and the second interconnect includes a second PTH core, a third via, and a fourth via. The package substrate further includes a magnetic portion that vertically surrounds the first interconnect. The first PTH core has a top surface directly coupled to the first via, and a bottom surface directly coupled to the second via. The second PTH core has a top surface directly coupled to the third via, and a bottom surface directly coupled to the fourth via.

Abstract: Embodiments include electronic packages and methods of forming such packages. In an embodiment, an electronic package comprises a first substrate, and a second substrate coupled to the first substrate. In an embodiment, the second substrate comprises a core, and the core comprises an organic material. In an embodiment, a third substrate is coupled to the second substrate, and the third substrate comprises a glass layer.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such packages. In an embodiment, an electronic package comprises a core, where the core comprises an organic material. In an embodiment, a via is provided through a thickness of the core. In an embodiment, a shell is around the via, where the shell comprises a magnetic material. In an embodiment, a mold layer is over the core, and a bridge is embedded in the mold layer. In an embodiment, a column is through the mold layer, where the column is aligned with the via.

Abstract: An electronic device comprises a mold layer that includes multiple integrated circuit (IC) dice having contact pads, a glass core patch embedded in encapsulating material that surrounds the top, bottom, and sides of the glass core patch, and a first redistribution layer arranged between the first mold layer and the glass core patch. The first redistribution layer includes electrically conductive interconnect that electrically connects one or more contact pads of the IC dice to the glass core patch.

Abstract: Techniques for self-assembly of regions in a dielectric layer with different electrical properties are described herein. In one example, a package includes a substrate, a layer of dielectric material over the substrate, the layer of dielectric material including a filler material. The package includes a plurality of conductive traces in the layer of dielectric material, and a filler-depleted radial region of the dielectric material around each of the plurality of conductive traces. The filler-depleted radial region has a lower volume-percentage of filler than other regions of the layer of dielectric material. In one example, the conductive traces, filler, or both include a coating to cause the filler and traces to have opposing surface chemistry.

Abstract: Embodiments disclosed herein include electronic packages and methods of forming such electronic packages. In an embodiment, an electronic package comprises a plurality of stacked layers. In an embodiment, a first trace is on a first layer, wherein the first trace has a first thickness. In an embodiment, a second trace is on the first layer, wherein the second trace has a second thickness that is greater than the first thickness. In an embodiment, a second layer is over the first trace and the second trace.

Abstract: Embodiments described herein may be related to apparatuses, processes, and techniques directed to a glass core within a substrate in a package, with one or more through glass vias (TGV) that are filled with a conductive material to electrically couple a first side of the glass core with a second side of the glass layer opposite the first side. A pad, also of conductive material, is electrically and physically coupled with a first and/or second end of the conductive material of the TGV. A layer of dielectric material is between at least a portion of the pad and the surface of the glass core between the pad and the glass core during manufacturing, handling, and/or operation to facilitate a reduction of stress cracks in the glass core. Other embodiments may be described and/or claimed.

Abstract: Transmission pathways in substrates, and associated methods are shown. Example transmission pathways include a semiconductor substrate with a core, a dielectric layer fixed on the core, at least one first electrical transmission pathway extending through at least one of the dielectric layer and the core. The first pathway includes a magnetic material disposed within the at least the core of the at least one first electrical transmission pathway, at least one second electrical transmission pathway extending through the magnetic material, a nickel layer disposed on inner circumferential surface of the magnetic material at least within the second electrical transmission pathway, a copper layer disposed on at least the nickel layer within the second electrical transmission pathway. The dielectric spacer or the nickel layer separates the copper layer from the magnetic material.