Abstract: A system and method for decoding command signals that includes a command decoder configured to generate internal control signals to perform an operation based on the command signals and an operating state. The same combination of command signals can request different commands depending on the operating state. A command is selected from a first set of operations according to the command signals when the memory system is in a first operating state and a command is selected from a second set of operations according to the command signals when the memory system is in a second operating state.

Abstract: Embodiments of the present invention provide electronic devices, memory devices and methods of driving an on-chip signal off a chip. In one such embodiment, an on-chip signal and a second signal complementary to the on-chip signal are generated and provided to the two inputs of a differential driver. One output of the differential driver circuitry is coupled to an externally-accessible output terminal of the package. The other output may be terminated off the chip, but within the package. By routing the output signal and a second complementary output through the package, crosstalk potentially caused by the output signal can be reduced. Simultaneous switching output noise may also be reduced through use of a current-steering differential driver topology. Signal symmetry may also improve, reducing inter-symbol interference.

Abstract: A system and method for decoding command signals that includes a command decoder configured to generate internal control signals to perform an operation based on the command signals and an operating state. The same combination of command signals can request different commands depending on the operating state. A command is selected from a first set of operations according to the command signals when the memory system is in a first operating state and a command is selected from a second set of operations according to the command signals when the memory system is in a second operating state.

Abstract: A method and system for generating a reference voltage for memory device signal receivers operates in either a calibration mode or a normal operating mode. In the calibration mode, the magnitude of the reference voltage is incrementally varied, and a digital signal pattern is coupled to the receiver at each reference voltage. An output of the receiver is analyzed to determine if the receiver can accurately pass the signal pattern at each reference voltage level. A range of reference voltages that allow the receiver to accurately pass the signal pattern is recorded, and a final reference voltage is calculated at the approximate midpoint of the range. This final reference voltage is applied to the receiver during normal operation.

Abstract: Processes are disclosed which facilitate improved high-density memory circuitry, most preferably dynamic random access memory (DRAM) circuitry. A semiconductor memory device includes i) a total of no more than 68,000,000 functional and operably addressable memory cells arranged in multiple memory arrays formed on a semiconductor die; and ii) circuitry formed on the semiconductor die permitting data to be written to and read from one or more of the memory cells, at least one of the memory arrays containing at least 100-square microns of continuous die surface area having at least 128 of the functional and operably addressable memory cells, more preferably, at least 100 square microns of continuous die surface area having at least 170 of the functional and operably addressable memory cells.

Abstract: Embodiments of the present invention provide electronic devices, memory devices and methods of driving an on-chip signal off a chip. In one such embodiment, an on-chip signal and a second signal complementary to the on-chip signal are generated and provided to the two inputs of a differential driver. One output of the differential driver circuitry is coupled to an externally-accessible output terminal of the package. The other output may be terminated off the chip, but within the package. By routing the output signal and a second complementary output through the package, crosstalk potentially caused by the output signal can be reduced. Simultaneous switching output noise may also be reduced through use of a current-steering differential driver topology. Signal symmetry may also improve, reducing inter-symbol interference.

Abstract: Processes are disclosed which facilitate improved high-density memory circuitry, most preferably dynamic random access memory (DRAM) circuitry. A semiconductor memory device includes i) a total of no more than 68,000,000 functional and operably addressable memory cells arranged in multiple memory arrays formed on a semiconductor die; and ii) circuitry formed on the semiconductor die permitting data to be written to and read from one or more of the memory cells, at least one of the memory arrays containing at least 100-square microns of continuous die surface area having at least 128 of the functional and operably addressable memory cells, more preferably, at least 100 square microns of continuous die surface area having at least 170 of the functional and operably addressable memory cells.

Abstract: Various embodiments include apparatus, systems, and methods having multiple dice arranged in a stack in which a defective cell may be replaced by a spare cell on the same die or a different die.

Abstract: Some embodiments include apparatus and methods having dice arranged in a stack. The dice include at least a first die and a second die, and a connection coupled to the dice. The connection may be configured to transfer control information to the first die during an assignment of a first identification to the first die and to transfer the control information from the first die to the second die during an assignment of a second identification to the second die.

Abstract: Some embodiments include apparatus, systems, and methods having a base, a first die, a second arranged in a stacked with the first die and the base, and a structure located in the stack and outside at least one of the first and second dice and configured to transfer signals between the base and at least one of the first and second dice.

Abstract: A method of controlling the output of data from a memory device includes deriving from an external clock signal a read clock and a control clock for operating an array of storage cells, both the read clock and the control clock each being comprised of clock pulses. A value is preloaded into one or both of a first counter located in the read clock domain and a second counter located in the control clock domain such that the difference in starting counts between the two counters is equal to a column address strobe latency (L) minus a synchronization (SP) overhead. A start signal is generated for initiating production of a running count of the read clock pulses in the first counter. The input of the start signal to the second counter is delayed so as to delay the initiation of a running count of the control clock pulses. A value of the second counter is held in response to a read command.

Abstract: A method and circuitry for improved write latency tracking in a SDRAM is disclosed. In one embodiment, a delay locked loop is used in the command portion of the write path, and receives the system clock as its reference input. The DLL includes a modeled delay which models the delay in transmission of the internal Write Valid signal and system clock distribution to the deserializers in the data path portion of the write path, which is otherwise controlled by the intermittently asserted write strobe signal. With the input distribution delay of the system clock (Clk) and the write strobe (WS) matched by design, the distributed system clock and Write Valid signal are synchronized to the WS distribution path by means of the DLL delay with reference to the system clock input to the DLL.

Abstract: A 256 Meg dynamic random access memory is comprised of a plurality of cells organized into individual arrays, with the arrays being organized into 32 Meg array blocks, which are organized into 64 Meg quadrants. Sense amplifiers are positioned between adjacent rows in the individual arrays while row decoders are positioned between adjacent columns in the individual arrays. In certain of the gap cells, multiplexers are provided to transfer signals from I/O lines to datalines. A data path is provided which, in addition to the foregoing, includes array I/O blocks, responsive to the datalines from each quadrant to output data to a data read mux, data buffers, and data driver pads. The write data path includes a data in buffer and data write muxes for providing data to the array I/O blocks. A power bus is provided which minimizes routing of externally supplied voltages, completely rings each of the array blocks, and provides gridded power distribution within each of the array blocks.

Abstract: A technique to increase transfer rate of command and address signals via a given number of command and address pins in each of one or more integrated circuit memory devices during a clock cycle of a clock signal. In one example embodiment, the command and address signals are sent on both rising and falling edges of a clock cycle of a clock signal to increase the transfer rate and essentially reduce the number of required command and address pins in each integrated circuit memory device.

Abstract: A method and circuitry for improved write latency tracking in a SDRAM is disclosed. In one embodiment, a delay locked loop is used in the command portion of the write path, and receives the system clock as its reference input. The DLL includes a modeled delay which models the delay in transmission of the internal Write Valid signal and system clock distribution to the deserializers in the data path portion of the write path, which is otherwise controlled by the intermittently asserted write strobe signal. With the input distribution delay of the system clock (Clk) and the write strobe (WS) matched by design, the distributed system clock and Write Valid signal are synchronized to the WS distribution path by means of the DLL delay with reference to the system clock input to the DLL.

Abstract: Embodiments of the present invention provide electronic devices, memory devices and methods of driving an on-chip signal off a chip. In one such embodiment, an on-chip signal and a second signal complementary to the on-chip signal are generated and provided to the two inputs of a differential driver. One output of the differential driver circuitry is coupled to an externally-accessible output terminal of the package. The other output may be terminated off the chip, but within the package. By routing the output signal and a second complementary output through the package, crosstalk potentially caused by the output signal can be reduced. Simultaneous switching output noise may also be reduced through use of a current-steering differential driver topology. Signal symmetry may also improve, reducing inter-symbol interference.

Abstract: A method and system for generating a reference voltage for memory device signal receivers operates in either a calibration mode or a normal operating mode. In the calibration mode, the magnitude of the reference voltage is incrementally varied, and a digital signal pattern is coupled to the receiver at each reference voltage. An output of the receiver is analyzed to determine if the receiver can accurately pass the signal pattern at each reference voltage level. A range of reference voltages that allow the receiver to accurately pass the signal pattern is recorded, and a final reference voltage is calculated at the approximate midpoint of the range. This final reference voltage is applied to the receiver during normal operation.

Abstract: A technique to increase transfer rate of command and address signals via a given number of command and address pins in each of one or more integrated circuit memory devices during a clock cycle of a clock signal. In one example embodiment, the command and address signals are sent on both rising and falling edges of a clock cycle of a clock signal to increase the transfer rate and essentially reduce the number of required command and address pins in each integrated circuit memory device.

Abstract: An apparatus and method for repairing a semiconductor memory device includes a first memory cell array, a first redundant cell array and a repair circuit configured to nonvolatilely store a first address designating at least one defective memory cell in the first memory cell array. A first volatile cache stores a first cached address corresponding to the first address designating the at least one defective memory cell. The repair circuit distributes the first address designating the at least one defective memory cell of the first memory cell array to the first volatile cache. Match circuitry substitutes at least one redundant memory cell from the first redundant cell array for the at least one defective memory cell in the first memory cell array when a first memory access corresponds to the first cached address.

Abstract: A method of controlling the output of data from a memory device includes deriving from an external clock signal a read clock and a control clock for operating an array of storage cells, both the read clock and the control clock each being comprised of clock pulses. A value is preloaded into one or both of a first counter located in the read clock domain and a second counter located in the control clock domain such that the difference in starting counts between the two counters is equal to a column address strobe latency (L) minus a synchronization (SP) overhead. A start signal is generated for initiating production of a running count of the read clock pulses in the first counter. The input of the start signal to the second counter is delayed so as to delay the initiation of a running count of the control clock pulses. A value of the second counter is held in response to a read command.