Abstract: A computing device, including: a first level; a second level, where the first level includes a plurality of interconnect lines, where the second level is disposed above the first level and includes a plurality of processor arrays; and a memory structure disposed above the first level, where the memory structure includes a control level, a first array of memory cells overlaying the control level, and a second array of memory cells overlaying the first array of memory cells, where at least one of the plurality of interconnect lines connect over a distance of at least 40 mm, and where the plurality of processor arrays include at least one Graphic Processor Unit (“GPU”).

Abstract: A semiconductor device, the device including: a first silicon layer including a first single crystal silicon; a first metal layer disposed over the first silicon layer; a second metal layer disposed over the first metal layer; a second level including a second single crystal silicon and a plurality of transistors, the second level is disposed over the second metal layer; a third metal layer disposed over the second level; a fourth metal layer disposed over the third metal layer; a via disposed through the second level, where the via has a diameter of less than 450 nm, where the second level thickness is less than four microns, and where the via includes contact to at least one of the plurality of transistors.

Abstract: A 3D semiconductor device, the device including: a first level including a first single crystal layer, the first level including a plurality of first metal layers; a second level overlaying the plurality of first metal layers, the second level including a second single crystal layer, a plurality of transistors, and a plurality of second metal layers, where at least one of the plurality of transistors includes a metal gate, where the second single crystal layer thickness is less than 2 microns, where the plurality of transistors includes one or more transistors with a first Threshold Voltage (Vt1), where the plurality of transistors includes one or more transistors with a second Threshold Voltage (Vt2), and where Vt1 is greater than Vt2.

Abstract: A 3D device including: a first level including first transistors and a first interconnect; a second level including second transistors and overlaying the first level; power decoupling capacitors; at least four functional units (FCUs); where each FCU includes a first circuit which includes a portion of the first transistors, and includes a second circuit which includes a portion of the second transistors, and includes a vertical connectivity structure (VCS), the VCS includes a plurality of pillars which provides electrical control connection between the first circuit and the second circuit. Each of the FCUs includes at least one memory control circuit and at least one memory array. The second level is bonded to the first level and includes metal to metal bonding regions. A third transistor and a fourth transistor are electrically connected and are at least 50 mm apart.

Abstract: A 3D semiconductor device, the device including: a first level including logic circuits; a second level including a plurality of connectivity units, where the first level is overlaid by the second level, where each of the plurality of connectivity units includes at least one receiver circuit; and horizontally oriented transmission lines, where at least one of the plurality of connectivity units includes an Orthogonal Frequency Division Multiple Access (“OFDMA”) modulation circuit.

Abstract: A method to process a semiconductor device: processing the substrate forming a first level with a first single-crystal silicon-layer, first transistors, input-and-output (“IO”) circuits; forming a first metal-layer; forming a second metal-layer including a power-delivery network, where interconnection of the first transistors includes the first metal-layer and the second metal-layer; processing a second level including second transistors with metal gates and a first array of memory-cells; processing a third level including a plurality of third transistors with metal gates and a second array of memory-cells; third level disposed over the second level; forming a fourth metal-layer over a third metal-layer over the third-level; processing a fourth level including a second single-crystal silicon-layer, fourth level is disposed over the fourth metal-layer; forming a via disposed through the second and third levels, connections of the device to external devices includes the “IO”-circuits; the second level is dispos

Abstract: A method for fabricating a semiconductor device comprising: forming a first level; disposing a second level on top of the first level; disposing a third level on top of the second level; forming a via connection through the second level and the third level, where the first level comprises first transistors, at least four independently controlled first memory arrays, and first filled holes therein, where the second level comprises second memory arrays and second filled holes therein, where disposing the third level comprises third transistors, a plurality of third memory arrays, and at least one metal layer therein; disposing a fourth level on top of the third level, where the fourth level comprises fourth transistors and at least one SRAM memory array therein; and bonding the fourth level to the third level via metal-to-metal bonding regions.

Abstract: A 3D device includes a first level including a first single crystal layer with control circuitry which includes first single crystal transistors; a first metal layer atop first single crystal layer; a second, third, and fourth metal layer providing connections between the first transistors; at least one second level (includes a plurality of second transistors including metal gates, and a plurality of memory cells) atop the first level; a fourth metal layer above the second level; a fifth metal layer atop the fourth metal layer, where the second level includes at least one first oxide layer overlaid by a transistor layer and then overlaid by a second oxide layer; a global power distribution grid; a local power distribution grid, where the first level includes first Electrostatic Discharge (ESD) circuits, and the first single crystal transistors or second transistors include at least two FinFet transistors each having different threshold voltages.

Abstract: An integrated semiconductor device including: a first level including single crystal silicon and logic circuits each include first transistors; a second level, disposed above the first level and includes arrays of first memory cells, where the second level includes a plurality of second transistors, where each of the first memory cells includes at least one of the second transistors, where the first level is bonded to the second level; an array of processors; a plurality of SerDes circuits; and a third level, where the third level includes a plurality of third transistors, where the third level is disposed above the second level and includes a plurality of arrays of second memory cells, where each of the second memory cells includes at least one of the third transistors, where the device includes a substrate having an area greater than 1,000 mm2, and where the substrate includes at least one interconnect.

Abstract: A 3D semiconductor device including: a first level including a first single crystal layer and a memory control circuit including first transistors and control circuit connectivity provided by first, second, and third metal layers; a second level including second transistors (one which includes a metal gate) disposed atop the first level; third transistors disposed atop second transistors with a fourth metal layer disposed atop; a memory array including word-lines, the memory array includes at least four memory mini arrays, where each mini array includes at least four rows by four columns of memory cells, and where each of the memory cells includes at least one of the second or third transistors; a connection path from the fourth metal to the third or second metal layer, which includes a via disposed through the second level, and where the memory control circuit includes at least one power down control circuit.

Abstract: A 3D semiconductor device including: a first level with first transistors, a single-crystal layer and at least one metal layer which includes interconnects between the first transistors forming first control circuits with a plurality of sense amplifiers; the first metal layer(s) overlaid by a second metal layer which is overlaid by a second level which includes first memory-cells which include second transistors with a metal-gate, overlaid by a third level which includes second memory cells which include third transistors which control the data written to second memory cells; a fourth metal layer overlaying a third metal layer which overlays the third level; where third transistor gate locations are aligned to second transistor gate locations within greater than 0.2 nm error, the first transistors or the second transistors comprise at least two FinFet transistors, and two of the FinFet transistors each have different threshold voltages.

Abstract: A 3D device including: a first level including first transistors, a first interconnect; a second level including second transistors, the second level overlaying the first level and bonded to each other includes metal to metal bonding regions; at least four functional units each includes a first circuit which includes a portion of the first transistors; a redundancy circuit, where each of the at least four functional units includes a second circuit which includes a portion of the second transistors, and includes at least one memory control circuit and at least one memory array; where each of the at least four functional units includes a vertical connectivity structure which includes a plurality of pillars which provides electrical control connection between the first circuit and the second circuit; and a third transistor and a fourth transistor electrically connected to each other and are at least 100 mm apart.

Abstract: An intercalation doping apparatus including: a reactor chamber where single or multiple wafers or substrates (SoMWoSubs) are disposed within the reactor chamber, where SOMWoSubs have a diameter or a side distance from 25 mm to 450 mm; a heater, where the heater is configured to provide heat to the SOMWoSubs disposed within the reactor chamber, where the SoMWoSubs include a temperature from 25° C. to 500° C.; where pressure is applied to at least one surface of the SOMWoSubs disposed within the reactor chamber within a range of 2 bar to 500 bar; and a dopant application apparatus, where the dopant application apparatus includes at least valves and tubing which bring dopants from outside to within the reactor chamber and includes at least a dopant crucible disposed within the reactor chamber, where the dopants include material in solid, liquid, or gaseous phase, and where the dopants include intercalation doping agents.

Abstract: A method to process a semiconductor device: processing the substrate forming a first level with a first single-crystal silicon-layer, first transistors, input-and-output (“IO”) circuits; forming a first metal-layer; forming a second metal-layer including a power-delivery network, where interconnection of the first transistors includes the first metal-layer and the second metal-layer; processing a second level including second transistors with metal gates and a first array of memory-cells; processing a third level including a plurality of third transistors with metal gates and a second array of memory-cells; third level disposed over the second level; forming a fourth metal-layer over a third metal-layer over the third-level; processing a fourth level including a second single-crystal silicon-layer, fourth level is disposed over the fourth metal-layer; forming a via disposed through the second and third levels, connections of the device to external devices includes the “IO”-circuits; the second level is dispos

Abstract: A 3D device including: a first level including first transistors and a first interconnect; a second level including second transistors, the second level overlaying the first level; and at least four electronic circuit units (ECUs), where each of the ECUs include a first circuit, the first circuit including a portion of the first transistors, where each of the ECUs includes a second circuit, the second circuit including a portion of the second transistors, where each of the ECUs includes a first vertical bus, where the first vertical bus provides electrical connections between the first circuit and the second circuit, where each of the ECUs includes at least one processor and at least one memory array, where the second level is bonded to the first level, and where the bonded includes oxide to oxide bonding regions and metal to metal bonding regions.

Abstract: A 3D semiconductor device including: a first level including a first single crystal layer and first transistors, which each include a single crystal channel; a first metal layer with an overlaying second metal layer; a second level including second transistors, overlaying the first level; a third level including third transistors, overlaying the second level; a fourth level including fourth transistors, overlaying the third level, where the second level includes first memory cells, where each of the first memory cells includes at least one of the second transistors, where the fourth level includes second memory cells, where each of the second memory cells includes at least one of the fourth transistors, where the first level includes memory control circuits, where second memory cells include at least four memory arrays, each of the four memory arrays are independently controlled, and at least one of the second transistors includes a metal gate.

Abstract: Methods to fabricate a semiconductor device, the method including: forming a first level, the first level including a single crystal silicon layer, a plurality of transistors, and a plurality of first metal layers, where each transistor of the plurality of transistors includes a single crystal channel, and where the plurality of first metal layers include interconnections between the transistors of the plurality of transistors; thinning the single crystal silicon layer to a thickness of less than two microns; forming a second level, the second level including a plurality of second metal layers, where the second level is disposed underneath the first level; and forming a connection path between at least one of the transistors to at least one of the plurality of second metal layers, where the connective path includes at least one via disposed through at least the single crystal silicon layer.

Abstract: A 3D device including: a first level including first transistors, a first interconnect; a second level including second transistors, the second level overlaying the first level and bonded to each other includes metal to metal bonding regions; at least four functional units each includes a first circuit which includes a portion of the first transistors; a redundancy circuit, where each of the at least four functional units includes a second circuit which includes a portion of the second transistors, and includes at least one memory control circuit and at least one memory array; where each of the at least four functional units includes a vertical connectivity structure which includes a plurality of pillars which provides electrical control connection between the first circuit and the second circuit; and a third transistor and a fourth transistor electrically connected to each other and are at least 100 mm apart.

Abstract: Methods of fabricating a 3D semiconductor device including: forming a first level including a first single crystal layer and first transistors, includes a single crystal channel; forming a first metal layer in the first level and a second metal layer overlaying the first metal layer; forming memory control circuits in the first level; forming a second level including second transistors, where at least one of the second transistors includes a metal gate; forming a third level including third transistors; forming a fourth level including fourth transistors, where the second level includes first memory cells, where the fourth level includes second memory cells, where the memory control circuits include control of data written into the first memory cells and into the second memory cells, where at least one of the transistors includes a hafnium oxide gate dielectric.

Abstract: A diffusion-couple synthesis method using a graphene synthesis tool(GST) including: providing a substrate-load(SL) which includes first-prepared substrate(fPS) and second-prepared- substrate(sPS), where fPS includes a first-carbon-source(fCS), a first-sacrificial-diffusion layer(fSDL), and a first-device-level(fDL), where a first-dielectric-layer(fDiLy) is disposed atop fDL, where fSDL is disposed directly atop fDiLy, where fCS is disposed directly atop the fSDL, and where the sPS includes a secondCS, a secondSDL, and a secondDL, where secondDL is disposed atop the secondDL, where the secondSDL is disposed atop secondDiLy, where secondCS is disposed atop secondSDL; providing a GST capable of applying pressure and temperature to SL within a process chamber(PC); placing SL within PC; applying the pressure and the temperature to SL, where sPS is inverted and disposed above fPS, where fCS is in direct contact with secondCS; forming graphene at a first interface between the fDiLy and the fSDL and at a second inter