Patents by Inventor Brian H. Burrows
Brian H. Burrows has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20140014745Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.Type: ApplicationFiled: July 9, 2013Publication date: January 16, 2014Applicant: APPLIED MATERIALS, INC.Inventors: Brian H. BURROWS, Alexander TAM, Ronald STEVENS, Kenric T. CHOI, James David FELSCH, Jacob GRAYSON, Sumedh ACHARYA, Sandeep NIJHAWAN, Lori D. WASHINGTON, Nyi O. MYO
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Patent number: 8481118Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.Type: GrantFiled: July 12, 2011Date of Patent: July 9, 2013Assignee: Applied Materials, Inc.Inventors: Brian H. Burrows, Alexander Tam, Ronald Stevens, Kenric T. Choi, James D. Felsch, Jacob Grayson, Sumedh Acharya, Sandeep Nijhawan, Lori D. Washington, Nyi O. Myo
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Patent number: 8183132Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.Type: GrantFiled: March 31, 2010Date of Patent: May 22, 2012Assignee: Applied Materials, Inc.Inventors: Sandeep Nijhawan, Brian H. Burrows, Tetsuya Ishikawa, Olga Kryliouk, Anand Vasudev, Jie Su, David H. Quach, Anzhong Chang, Yuriy Melnik, Harsukhdeep S. Ratia, Son T. Nguyen, Lily Pang
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Publication number: 20120024388Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.Type: ApplicationFiled: July 12, 2011Publication date: February 2, 2012Inventors: Brian H. Burrows, Alexander Tam, Ronald Stevens, Kenric T. Choi, James D. Felsch, Jacob Grayson, Sumedh Acharya, Sandeep Nijhawan, Lori D. Washington, Nyi O. Myo
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Patent number: 7976631Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.Type: GrantFiled: October 16, 2007Date of Patent: July 12, 2011Assignee: Applied Materials, Inc.Inventors: Brian H. Burrows, Alexander Tam, Ronald Stevens, Kenric T. Choi, James D. Felsch, Jacob Grayson, Sumedh Acharya, Sandeep Nijhawan, Lori D. Washington, Nyi O. Myo
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Publication number: 20110121503Abstract: Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.Type: ApplicationFiled: August 5, 2010Publication date: May 26, 2011Applicant: APPLIED MATERIALS, INC.Inventors: BRIAN H. BURROWS, Ronald Stevens, Jacob Grayson, Joshua J. Podesta, Sandeep Nijhawan, Lori D. Washington, Alexander Tam, Sumedh Acharya
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Publication number: 20110076400Abstract: One embodiment of the forming a nanocrystalline diamond-structured carbon layer on a silicon carbide layer comprises providing a silicon carbide layer in a reaction chamber and exposing the silicon carbide layer to a chlorine containing gas for an exposure time period to form a nanocrystalline diamond-structured carbon layer from the silicon carbide layer.Type: ApplicationFiled: September 22, 2010Publication date: March 31, 2011Applicant: Applied Materials, Inc.Inventors: Olga Kryliouk, Yuriy Melnik, Brian H. Burrows, Ronald Stevens, Jacob Grayson, Sandeep Nijhawan
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Publication number: 20110049779Abstract: Embodiments of the present invention relate to methods and apparatus for supporting substrates during processing. One embodiment of the present invention provides a substrate carrier comprising a body configured to provide structure support to one or more substrates. One or more pockets are formed in the body from a top surface. Each pocket is configured to retain one substrate by contacting only a portion of a back side of the substrate. Each pocket has a bottom surface and sidewalls surrounding the bottom surface. The sidewalls define an opening larger than a surface area of the substrate so that at least a majority portion of a bevel edge of the substrate is not in contact with the sidewalls.Type: ApplicationFiled: August 30, 2010Publication date: March 3, 2011Applicant: APPLIED MATERIALS, INC.Inventors: GLEN ERIC EGAMI, Brian H. Burrows, Kyawwin Maung
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Publication number: 20100261340Abstract: The present invention generally provides apparatus and methods for forming LED structures. One embodiment of the present invention provides a method for fabricating a compound nitride structure comprising forming a first layer comprising a first group-III element and nitrogen on substrates in a first processing chamber by a hydride vapor phase epitaxial (HVPE) process or a metal organic chemical vapor deposition (MOCVD) process, forming a second layer comprising a second group-III element and nitrogen over the first layer in a second processing chamber by a MOCVD process, and forming a third layer comprising a third group-III element and nitrogen over the second layer by a MOCVD process.Type: ApplicationFiled: March 31, 2010Publication date: October 14, 2010Applicant: APPLIED MATERIALS, INC.Inventors: SANDEEP NIJHAWAN, Brian H. Burrows, Tetsuya Ishikawa, Olga Kryliouk, Anand Vasudev, Jie Su, David H. Quach, Anzhong Chang, Yuriy Melnik, Harsukhdeep S. Ratia, Son T. Nguyen, Lily Pang
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Publication number: 20100215854Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.Type: ApplicationFiled: May 7, 2010Publication date: August 26, 2010Inventors: Brian H. Burrows, Alexander Tam, Ronald Stevens, Jacob Grayson, Kenric T. Choi, Sumedh Acharya, Sandeep Nijhawan, Olga Kryliouk, Yuriy Melnik
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Patent number: 7704327Abstract: A method including removing an impurity from a gas stream to a processing chamber at a point of use. An apparatus with a point of use purifier on a gas stream. An apparatus including a shelf having dimensions suitable for placement within a thermal processing including a body of a material that renders the body opaque to radiation frequency range used for a temperature measurement of a substrate in a thermal processing chamber.Type: GrantFiled: September 30, 2002Date of Patent: April 27, 2010Assignee: Applied Materials, Inc.Inventors: Ann P. Waldhauer, Juan M. Chacin, Brian H. Burrows
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Publication number: 20090194024Abstract: Embodiments of the present invention generally relate to methods and apparatus for chemical vapor deposition (CVD) on a substrate, and, in particular, to a process chamber and components for use in metal organic chemical vapor deposition. The apparatus comprises a chamber body defining a process volume. A showerhead in a first plane defines a top portion of the process volume. A carrier plate extends across the process volume in a second plane forming an upper process volume between the showerhead and the susceptor plate. A transparent material in a third plane defines a bottom portion of the process volume forming a lower process volume between the carrier plate and the transparent material. A plurality of lamps forms one or more zones located below the transparent material. The apparatus provides uniform precursor flow and mixing while maintaining a uniform temperature over larger substrates thus yielding a corresponding increase in throughput.Type: ApplicationFiled: January 31, 2008Publication date: August 6, 2009Inventors: Brian H. Burrows, Ronald Stevens, Jacob Grayson, Joshua J. Podesta, Sandeep Nijhawan, Lori D. Washington, Alexander Tam, Sumedh Acharya
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Publication number: 20090194026Abstract: One embodiment of a processing system for fabricating compound nitride semiconductor devices comprises one or more processing chamber operable with form a compound nitride semiconductor layer on a substrate, a transfer chamber coupled with the processing chamber, a loadlock chamber coupled with the transfer chamber, and a load station coupled with the loadlock chamber, wherein the load station comprises a conveyor tray movable to convey a carrier plate loaded with one or more substrates into the loadlock chamber. Compared to a single chamber reactor, the multi-chamber processing system expands the potential complexity and variety of compound structures. Additionally, the system can achieve higher quality and yield by specialization of individual chambers for specific epitaxial growth processes. Throughput is increased by simultaneous processing in multiple chambers.Type: ApplicationFiled: January 31, 2008Publication date: August 6, 2009Inventors: BRIAN H. BURROWS, Lori D. Washington, Ronald Stevens, Kenric T. Choi, Anthony F. White, Roger N. Anderson, Sandeep Nijhawan, Joshua J. Podesta, Alexander Tam
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Publication number: 20090098276Abstract: A method and apparatus that may be utilized for chemical vapor deposition and/or hydride vapor phase epitaxial (HVPE) deposition are provided. In one embodiment, a metal organic chemical vapor deposition (MOCVD) process is used to deposit a Group III-nitride film on a plurality of substrates. A Group III precursor, such as trimethyl gallium, trimethyl aluminum or trimethyl indium and a nitrogen-containing precursor, such as ammonia, are delivered to a plurality of straight channels which isolate the precursor gases. The precursor gases are injected into mixing channels where the gases are mixed before entering a processing volume containing the substrates. Heat exchanging channels are provided for temperature control of the mixing channels to prevent undesirable condensation and reaction of the precursors.Type: ApplicationFiled: October 16, 2007Publication date: April 16, 2009Inventors: Brian H. BURROWS, Alexander Tam, Ronald Stevens, Kenric T. Choi, James D. Felsch, Jacob Grayson, Sumedh Acharya, Sandeep Nijhawan, Lori D. Washington, Nyi O. Myo
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Publication number: 20080314317Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.Type: ApplicationFiled: October 26, 2007Publication date: December 25, 2008Inventors: BRIAN H. BURROWS, Olga Kryliouk, Yuriy Melnik, Jacob Grayson, Sandeep Nijhawan, Ronald Stevens, Sumedh Acharya
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Publication number: 20080314311Abstract: A method and apparatus that may be utilized in deposition processes, such as hydride vapor phase epitaxial (HVPE) deposition of metal nitride films, are provided. A first set of passages may introduce a metal containing precursor gas. A second set of passages may provide a nitrogen-containing precursor gas. The first and second sets of passages may be interspersed in an effort to separate the metal containing precursor gas and nitrogen-containing precursor gas until they reach a substrate. An inert gas may also be flowed down through the passages to help keep separation and limit reaction at or near the passages, thereby preventing unwanted deposition on the passages.Type: ApplicationFiled: June 24, 2007Publication date: December 25, 2008Inventors: Brian H. Burrows, Alexander Tam, Ronald Stevens, Jacob Grayson, Kenric T. Choi, Sumedh Acharya, Sandeep Nijhawan, Olga Kryliouk, Yuriy Melnik
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Publication number: 20080289575Abstract: An improved method and apparatus for depositing a Group III-V for a hydride vapor phase epitaxy (HVPE) process are provided. In one embodiment, an apparatus for a hydride vapor phase epitaxy process may include an elongated body having a trough defined between a first and a second wall, a channel formed in the first wall configured to provide a gas to the trough, and an inlet port formed in the body coupled to the channel. In another embodiment, a method for a hydride vapor phase epitaxy process may include providing Group III metal liquid precursor in a container disposed in a chamber, flowing a halogen containing gas across the container to form a Group III metal halide vapor to a reacting zone in the chamber, and mixing the Group III metal halide vapor with a Group V gas supplied in the chamber in the reacting zone.Type: ApplicationFiled: May 24, 2007Publication date: November 27, 2008Inventors: Brian H. Burrows, Nyi O. Myo, Ronald Stevens, Jacob Grayson, Lori D. Washington, Sandeep Nijhawan
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Publication number: 20080276860Abstract: A method and apparatus for hydride vapor phase epitaxial (HVPE) deposition is disclosed. In the HVPE process, a hydride gas flows over a metal source to react with the metal source, which then reacts at the surface of a substrate to deposit a metal nitride layer. The metal source comprises gallium, aluminum, and/or indium. The hydride gas is evenly provided over the metal source to increase efficiency of hydride-metal source reaction. An exhaust positioned diametrically across the chamber from the metal source creates a cross flow of the hydride-metal source product and nitrogen precursor across the chamber tangential to the substrate. A purge gas flowing perpendicular to the cross flow directs the hydride-metal source product and nitrogen precursor to remain as close to the substrate as possible.Type: ApplicationFiled: May 10, 2007Publication date: November 13, 2008Inventors: BRIAN H. BURROWS, Jacob Grayson, Nyi O. Myo, Ronald Stevens, Kenric T. Choi, Sumedh Acharya, Sandeep Nijhawan, Lori D. Washington
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Publication number: 20080017116Abstract: A method and apparatus for positioning a substrate support within a processing chamber is provided. In one embodiment, an apparatus for positioning a substrate support includes a first portion configured to mount to a bottom of a processing chamber and second portion configured to support a substrate support. The first portion is releaseably coupled to the second portion. The second portion includes a lower housing coupled to a lower collar. The lower collar is laterally positionable relative to the first portion. The lower housing has a planar orientation that is adjustable relative to a planar orientation of the lower collar.Type: ApplicationFiled: July 18, 2006Publication date: January 24, 2008Inventors: Jeffrey Campbell, Brian H. Burrows
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Publication number: 20080017117Abstract: Methods for positioning a substrate support within a processing chamber are provided. In one embodiment, a method for adjusting the orientation of a substrate support within a processing chamber using a mounting assembly is provided. The mounting assembly includes an upper portion coupled to the processing chamber and a lower portion coupled to the upper portion. The method includes adjusting a lateral position of a collar of the second portion relative to the first portion, and adjusting a planar orientation of the lower housing of the second portion relative to the first portion.Type: ApplicationFiled: July 18, 2006Publication date: January 24, 2008Inventors: JEFFREY CAMPBELL, BRIAN H. BURROWS