Abstract: A quantum memory system includes a chalcogenide optical fiber link, a magnetic field generation unit and a pump laser. The chalcogenide optical fiber link includes a photon receiving end opposite a photon output end and is positioned within a magnetic field of the magnetic field generation unit when the magnetic field generation unit generates the magnetic field. The pump laser is optically coupled to the photon receiving end of the chalcogenide optical fiber link. The chalcogenide optical fiber link includes a core doped with a rare-earth element dopant. The rare-earth element dopant is configured to absorb a storage photon traversing the chalcogenide optical fiber link upon receipt of a first pump pulse output by the pump laser. Further, the rare-earth element dopant is configured to release the storage photon upon receipt of a second pump pulse output by the pump laser.

Abstract: A quantum memory system includes a chalcogenide optical fiber link, a magnetic field generation unit and a pump laser. The chalcogenide optical fiber link includes a photon receiving end opposite a photon output end and is positioned within a magnetic field of the magnetic field generation unit when the magnetic field generation unit generates the magnetic field. The pump laser is optically coupled to the photon receiving end of the chalcogenide optical fiber link. The chalcogenide optical fiber link includes a core doped with a rare-earth element dopant. The rare-earth element dopant is configured to absorb a storage photon traversing the chalcogenide optical fiber link upon receipt of a first pump pulse output by the pump laser. Further, the rare-earth element dopant is configured to release the storage photon upon receipt of a second pump pulse output by the pump laser.

Abstract: Embodiments are directed to glass frits containing phosphors that can be used in LED lighting devices and for methods associated therewith for making the phosphor containing glass frit and their use in glass articles, for example, LED devices.

Abstract: A compositional range of manganese aluminosilicate glass-ceramics with high durability, and methods for making the same, are described herein. The glass-ceramics can be used in conjunction with electronic devices, such as in protective exteriors for such devices. The glass-ceramics can be characterized as having ring-on-ring strengths of at least 300 MPa and fracture toughnesses of at least 1.5 MPa·m1/2.

Abstract: Selenogermanate, selenogallo- or selenoindo-germanate glasses that are modified by alkali metals, for example, Na or Li and, as such, are characterized by high alkali ion mobility or conductivity. Ionic conducting chalcogenide glasses have potential application as an electrolyte medium for solid state batteries.

Abstract: A non-stoichiometric glass composition having greater than or equal to about 50 mol. % to less than or equal to about 95 mol. % GeX2; greater than or equal to about 0.5 mol. % to less than or equal to about 35 mol. % Ga2X3, In2X3, or a combination thereof; and greater than or equal to about 0.5 mol. % to less than or equal to about 40 mol. % RX. R can be an alkaline earth metal. X can be present in a non-stoichiometric amount and can be selected from Se, Te, S, and combinations thereof. A method for making a non-stoichiometric glass including forming a GaGeX precursor material, grinding the precursor material, loading the ground precursor material with an alkaline earth metal component, and forming an alkaline earth metal GaGeX glass.

Abstract: Disclosed herein are methods for producing glass articles by hot-melt processing techniques. The methods involve the use of arsenic-free chalcogenide glasses. Despite the absence of arsenic, the chalcogenide glasses have low characteristic temperatures and are stable against crystallization. The low characteristic temperatures render the glasses capable of being hot-melt processed using conventional equipment. The glasses disclosed herein are suitable for the fabrication of optical devices, including but not limited to IR-transmitting optical devices.

Abstract: A compositional range of manganese aluminosilicate glass-ceramics with high durability, and methods for making the same, are described herein. The glass-ceramics can be used in conjunction with electronic devices, such as in protective exteriors for such devices. The glass-ceramics can be characterized as having ring-on-ring strengths of at least 300 MPa and fracture toughnesses of at least 1.5 MPa·m1/2.

Abstract: A compositional range of fusion-formable, high strain point sodium free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?540° C., thermal expansion coefficient of from 6.5 to 10.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: A thin film battery comprises a substrate, anode and cathode current collector layers formed over the substrate, anode and cathode layers formed over and in electrical contact with respective ones of the current collector layers, and an electrolyte layer formed between the anode and cathode layers. The thin film battery further comprises a barrier layer formed from a material such as tin oxide, tin phosphate, tin fluorophosphate, chalcogenide glass, tellurite glass or borate glass. The barrier layer is configured to encapsulate the thin film battery layers and substantially inhibit or prevent exposure of the thin film battery layers to air or moisture.

Abstract: Fusion-formable sodium-containing aluminosilicate and boroaluminosilicate glasses are described. The glasses are particularly useful for controlled release of sodium—useful in semiconductor applications, such as thin film photovoltaics where the sodium required to optimize cell efficiency is to be derived from the substrate glass.

Abstract: Sodium-containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?540° C., thermal expansion coefficient of from 6.5 to 9.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such, they are ideally suited for being formed into sheet by the fusion process.

Abstract: A quantum memory system includes a chalcogenide optical fiber link, a magnetic field generation unit and a pump laser. The chalcogenide optical fiber link includes a photon receiving end opposite a photon output end and is positioned within a magnetic field of the magnetic field generation unit when the magnetic field generation unit generates the magnetic field. The pump laser is optically coupled to the photon receiving end of the chalcogenide optical fiber link. The chalcogenide optical fiber link includes a core doped with a rare-earth element dopant. The rare-earth element dopant is configured to absorb a storage photon traversing the chalcogenide optical fiber link upon receipt of a first pump pulse output by the pump laser. Further, the rare-earth element dopant is configured to release the storage photon upon receipt of a second pump pulse output by the pump laser.

Abstract: A compositional range of high strain point and/or intermediate expansion coefficient alkali metal free aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CdTe or CIGS photovoltaic devices or crystalline silicon wafer devices. These glasses can be characterized as having strain points ?600° C., thermal expansion coefficient of from 35 to 50×10?7/° C.

Abstract: Fusion-formable sodium-containing aluminosilicate and boroaluminosilicate glasses are described. The glasses are particularly useful for controlled release of sodium—useful in semiconductor applications, such as thin film photovoltaics where the sodium required to optimize cell efficiency is to be derived from the substrate glass.

Abstract: Embodiments are directed to glass frits containing phosphors that can be used in LED lighting devices and for methods associated therewith for making the phosphor containing glass frit and their use in glass articles, for example, LED devices.

Abstract: A quantum memory system includes a chalcogenide optical fiber link, a magnetic field generation unit and a pump laser. The chalcogenide optical fiber link includes a photon receiving end opposite a photon output end and is positioned within a magnetic field of the magnetic field generation unit when the magnetic field generation unit generates the magnetic field. The pump laser is optically coupled to the photon receiving end of the chalcogenide optical fiber link. The chalcogenide optical fiber link includes a core doped with a rare-earth element dopant. The rare-earth element dopant is configured to absorb a storage photon traversing the chalcogenide optical fiber link upon receipt of a first pump pulse output by the pump laser. Further, the rare-earth element dopant is configured to release the storage photon upon receipt of a second pump pulse output by the pump laser.

Abstract: A compositional range of high strain point and/or intermediate expansion coefficient alkali metal free aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CdTe or CIGS photovoltaic devices or crystalline silicon wafer devices. These glasses can be characterized as having strain points ?600° C., thermal expansion coefficient of from 35 to 50×10?7/° C.

Abstract: Sodium-containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?540° C., thermal expansion coefficient of from 6.5 to 9.5 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: Embodiments are directed to glass frits containing phosphors that can be used in LED lighting devices and for methods associated therewith for making the phosphor containing glass frit and their use in glass articles, for example, LED devices.