Abstract: Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?535° C., for example, ?570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: A multi-layer thin film laminate comprises a dyad layer including a barrier layer and a decoupling layer formed over a substrate. The barrier layer comprises a hermetic glass material selected from the group consisting of tin fluorophosphate glasses, tungsten-doped tin fluorophosphate glasses, chalcogenide glasses, tellurite glasses, borate glasses and phosphate glasses and the decoupling layer comprises a polymer material.

Abstract: Sodium containing aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?535° C., for example, ?570° C., thermal expansion coefficients of from 8 to 9 ppm/° C., as well as liquidus viscosities in excess of 50,000 poise. As such they are ideally suited for being formed into sheet by the fusion process.

Abstract: CTE-matched silicate glasses and more particularly to low-alkali CTE-matched silicate glasses that are useful in semiconductor-based applications, such as photovoltaics are described along with methods of making such glasses.

Abstract: Embodiments are directed to glass frits containing phosphors that can be used in LED lighting devices and for methods associated therewith for making the phosphor containing glass frit and their use in glass articles, for example, LED devices.

Abstract: IR-transmitting alkaline earth selenogallo- and/or selenoindo-germanate glasses that are capable of hosting luminescent rare earth dopants. The relatively high Ga and/or In content of most compositions serves to eliminate the typical clustering tendency of rare earth dopants in chalcogenide glasses, resulting in improved luminescence.

Abstract: A sputtering target comprises a low Tg glass or an oxide of copper or tin. Such target materials can be used to form mechanically-stable thin films that exhibit a self-passivating phenomenon and which can be used to seal sensitive workpieces from exposure to air or moisture. Low Tg glass materials may include phosphate glasses such as tin phosphates and tin fluorophosphates, borate glasses, tellurite glasses and chalcogenide glasses, as well as combinations thereof.

Abstract: A method of forming a solid, dense, hermetic lithium-ion electrolyte membrane comprises combing an amorphous, glassy, or low melting temperature solid reactant with a refractory oxide reactant to form a mixture, casting the mixture to form a green body, and sintering the green body to form a solid membrane. The resulting electrolyte membranes can be incorporated into lithium-ion batteries.

Abstract: Aluminoborosilicate glasses which may be useful in photovoltaic, photochromic, electrochromic, or Organic Light Emitting Diode (OLED) lighting applications are described.

Abstract: Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature.

Abstract: A sealing method for decreasing the time it takes to hermetically seal a device and the resulting hermetically sealed device (e.g., a hermetically sealed OLED device) are described herein. The sealing method includes the steps of: (1) cooling an un-encapsulated device; (2) depositing a sealing material over at least a portion of the cooled device to form an encapsulated device; and (3) heat treating the encapsulated device to form a hermetically sealed device. In one embodiment, the sealing material is a low liquidus temperature inorganic (LLT) material such as, for example, tin-fluorophosphate glass, tungsten-doped tin fluorophosphate glass, chalcogenide glass, tellurite glass, borate glass and phosphate glass. In another embodiment, the sealing material is a Sn2+-containing inorganic oxide material such as, for example, SnO, SnO+P2O5 and SnO+BPO4.

Abstract: A compositional range of high strain point and/or intermediate expansion coefficient alkali metal free aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates or superstrates for photovoltaic devices, for example, thin film photovoltaic devices such as CdTe or CIGS photovoltaic devices or crystalline silicon wafer devices. These glasses can be characterized as having strain points ?600° C., thermal expansion coefficient of from 35 to 50×10?7/° C.

Abstract: A method for hermetically sealing a device without performing a heat treatment step and the resulting hermetically sealed device are described herein. The method includes the steps of: (1) positioning the un-encapsulated device in a desired location with respect to a deposition device; and (2) using the deposition device to deposit a sealing material over at least a portion of the un-encapsulated device to form a hermetically sealed device without having to perform a post-deposition heat treating step. For instance, the sealing material can be a Sn2+-containing inorganic oxide material or a low liquidus temperature inorganic material.

Abstract: Tungsten-titanium-phosphate materials and methods of making and using the same.

Abstract: Phase change memory materials and more particularly GeAs telluride materials useful for phase change memory applications, for example, optical and electronic data storage are described.

Abstract: A compositional range of high strain point alkali metal free, silicate, aluminosilicate and boroaluminosilicate glasses are described herein. The glasses can be used as substrates for photovoltaic devices, for example, thin film photovoltaic devices such as CIGS photovoltaic devices. These glasses can be characterized as having strain points ?570° C., thermal expansion coefficient of from 5 to 9 ppm/° C.

Abstract: IR-transmitting alkaline earth selenogallo- and/or selenoindo-germanate glasses that are capable of hosting luminescent rare earth dopants. The relatively high Ga and/or In content of most compositions serves to eliminate the typical clustering tendency of rare earth dopants in chalcogenide glasses, resulting in improved luminescence.

Abstract: The invention relates to a transparent and essentially colorless ?-quartz glass-ceramic material which is free of TiO2, As2O3, Sb2O3 and phosphates; articles formed from said glass-ceramic material; lithium aluminosilicate glasses, precursors for said glass-ceramic material; and methods of producing said glass-ceramic material and said articles formed from said glass-ceramic material.

Abstract: Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature.

Abstract: Methods and apparatus provide for: applying an inorganic barrier layer to at least a portion of a flexible substrate, the barrier layer being formed from a low liquidus temperature (LLT) material; and sintering the inorganic barrier layer while maintaining the flexible substrate below a critical temperature.