Abstract: Bi-containing glass-ceramic material, especially those containing ?-quartz and/or ?-spodumene solid solutions as the predominant crystalline phase, and the precursor glass material as well as process of making such glass-ceramic material and articles. The glass-ceramic can be made to have a dark color, and essentially to be free of V2O5, As2O3 and Sb2O3.

Abstract: The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the strain point of the glass or glass-ceramic equal to or greater than about 800° C.

Abstract: Bi-containing glass-ceramic material, especially those containing ?-quartz and/or ?-spodumene solid solutions as the predominant crystalline phase, and the precursor glass material as well as process of making such glass-ceramic material and articles. The glass-ceramic can be made to have a dark color, and essentially to be free of V2O5, As2O3 and Sb2O3.

Abstract: A method for inhibiting oxygen and moisture degradation of a device (e.g., an OLED device) and the resulting device are described herein. To inhibit the oxygen and moisture degradation of the device, a Sn2+-containing inorganic oxide material is used to form a barrier layer on the device. The Sn2+-containing inorganic oxide material can be, for example, SnO, blended SnO & P2O5 powders, and blended SnO & BPO4 powders.

Abstract: A method for hermetically sealing a device without performing a heat treatment step and the resulting hermetically sealed device are described herein. The method includes the steps of: (1) positioning the un-encapsulated device in a desired location with respect to a deposition device; and (2) using the deposition device to deposit a sealing material over at least a portion of the un-encapsulated device to form a hermetically sealed device without having to perform a post-deposition heat treating step. For instance, the sealing material can be a Sn2+-containing inorganic oxide material or a low liquidus temperature inorganic material.

Abstract: Tungsten-doped tin-fluorophosphate glasses are described herein which exhibit excellent humidity resistance, thermal resistance, and have a low glass transition temperature which makes them suitable for low temperature sealing applications, such as for encapsulating electronic components. In one embodiment, these glasses comprise 55-75% Sn, 4-14% P, 6-24% O, 4-22% F, and 0.15-15% W on a weight percent elemental basis.

Abstract: Disclosed are glass materials generally belonging to the P2O5—ZnO—TeO2 system and process for making the same. The glass may comprise Bi2O3 as well. The high refractive index and low Tg materials are particularly suitable for refractive lens elements for use in portable optical devices. The process involves the use of P2O5 source materials with reduced amounts of reducing agents or a step of removing the reducing agents from such source materials by an oxidizing step such as calcination.

Abstract: A method is disclosed for inhibiting oxygen and moisture penetration of a device comprising the steps of depositing a tin phosphate low liquidus temperature (LLT) inorganic material on at least a portion of the device to create a deposited tin phosphate LLT material, and heat treating the deposited LLT material in a substantially oxygen and moisture free environment to form a hermetic seal; wherein the step of depositing the LLT material comprises the use of a resistive heating element comprising tungsten. An organic electronic device is also disclosed comprising a substrate plate, at least one electronic or optoelectronic layer, and a tin phosphate LLT barrier layer, wherein the electronic or optoelectronic layer is hermetically sealed between the tin phosphate LLT barrier layer and the substrate plate. An apparatus is also disclosed having at least a portion thereof sealed with a tin phosphate LLT barrier layer.

Abstract: The invention is directed to chalcogenide glasses suitable for use in plastics forming processes. The glasses have the general formula YZ, where Y is Ge, As, Sb or a mixture of two or more of the sane; Z is Se, Te, or a mixture of Se+Te; and Y and Z are present in amounts (in atomic/element percent) in the range of Y=15-70% and Z=30-85%. The chalcogenide glasses of the invention have a 10,000 poise temperature of 400° C. and are resistant to crystallization when processed at high shear rates at their 10,000 poise temperature. The glasses can be used to make, among other items, molded telecommunication elements, lenses and infrared sensing devices.

Abstract: The present invention relates to semiconductor-on-insulator structures having strained semiconductor layers. According to one embodiment of the invention, a semiconductor-on-insulator structure has a first layer including a semiconductor material, attached to a second layer including a glass or glass-ceramic, with the CTEs of the semiconductor and glass or glass-ceramic selected such that the first layer is under tensile strain. The present invention also relates to methods for making strained semiconductor-on-insulator layers.

Abstract: The invention is directed to chalcogenide glasses suitable for use in plastics forming processes. The glasses have the general formula YZ, where Y is Ge, As, Sb or a mixture of two or more of the same; Z is S, Se, Te, or a mixture of two or more of the same; and Y and Z are present in amounts (in atomic/element percent) in the range of Y=15–70% and Z=30–85%. The chalcogenide glasses of the invention have a 10,000 poise temperature of 400° C. and are resistant to crystallization when processed at high shear rates at their 10,000 poise temperature. The glasses can be used to make, among other items, molded telecommunication elements, lenses and infrared sensing devices.