Abstract: A two-transistor memory cell based upon a thyristor for an SRAM integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM.

Abstract: A memory cell based upon thyristors for an SRAM integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM. Special circuitry provides lowered power consumption during standby.

Abstract: A two-transistor memory cell based upon a thyristor for an SRAM integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM.

Abstract: A two-transistor memory cell based upon a thyristor for an SRAM integrated circuit is described together with methods of operation. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM.

Abstract: A two-transistor memory cell based upon a thyristor for an SRAM integrated circuit is described together with methods of operation. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM.

Abstract: A volatile memory array using vertical thyristors is disclosed together with methods of operating the array to read, write, retain and refresh data stored therein.

Abstract: A volatile memory array using vertical thyristors is disclosed together with methods of reducing power consumption in such arrays.

Abstract: A volatile memory array using vertical thyristors is disclosed together with methods of fabricating the array.

Abstract: A memory cell based upon thyristors for an SRAM integrated circuit is described together with a process for fabricating it. The memory cell can be implemented in different combinations of MOS and bipolar select transistors, or without select transistors, with thyristors in a semiconductor substrate with shallow trench isolation. Standard CMOS process technology can be used to manufacture the SRAM. Special circuitry provides lowered power consumption during standby.

Abstract: A volatile memory array using vertical thyristors is disclosed together with methods of operating the array to read data from and write data to the array.

Abstract: A sampling circuit for testing an integrated circuit receives several signals from points of interest in the integrated circuit, digitizes them, and determines whether the digitized signal is above or below a threshold. By sampling the signal at different phases of a system clock signal, a determination can be made of when during the system clock signal the signal at a point of interest changed state. Circuits are provided for making minimal impact on the circuit being observed. Circuits are also provided for clocking the observed signal so that it can be compared to other observed signals.

Abstract: A circuit for isolating an interconnect line from unwanted input signal voltage levels is described. One implementation of the circuit includes a transmission gate coupled in series between an input signal and an interconnect line having its gate coupled to the output of an inverter and the input of the inverter coupled to the input signal. The inverter senses the input signal and when it sense voltages that are either too high or low, the isolation circuit decouples the input signal from the interconnect line such that the input signal can transition independently with respect to the voltage levels on the interconnect line.

Abstract: A current limiting, process compensating circuit for CMOS memory arrays is provided. A dual transistor bias circuit is connected to each of a pair of columns of the array with a four transistor voltage reference circuit having its output connected to the gates of the active P-channel transistor of each bias circuit. A first P-channel transistor of the voltage reference circuit is sized to be less than the P-channel transistor of the bias circuit and the other three N-channel transistors are sized to be the same as the second transistor of the bias circuit and the two transistors of each memory cell in the array. As supply voltage to the array moves up or down making more or less current available, the combined circuit maintains nearly constant current on the first transistor of each bias circuit while compensating for process variation.