Abstract: A pressure sensing device may include a body configured to distribute a load applied between first and second parts positioned one against the other, and a pressure sensor carried by the body. The pressure sensor may include a support body, and an IC die mounted with the support body and defining a cavity. The IC die may include pressure sensing circuitry responsive to bending associated with the cavity, and an IC interface coupled to the pressure sensing circuitry.

Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectri

Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectri

Abstract: Displacement transducer device, adapted to be coupled to reference points of a structure, includes a first element integrally securable to a first reference point of the structure, first and second magnets arranged so as to magnetically repel one another, a transducer arranged proximate the first and second magnets so as to detect a variation in the magnetic field between the first and second magnet and to convert the variation into a signal processed by a processing unit, the displacement transducer device includes a second element integrally securable to a second reference point of the structure, and one of the first or second magnet or transducer being connected to the first element and the remaining elements of the first or second magnet or transducer being connected to the second element such that a relative movement of the first or the second reference point causes a variation in the magnetic field.

Abstract: A packaged pressure sensor, comprising: a MEMS pressure-sensor chip; and an encapsulating layer of elastomeric material, in particular PDMS, which extends over the MEMS pressure-sensor chip and forms a means for transferring a force, applied on a surface thereof, towards the MEMS pressure-sensor chip.

Abstract: A method of fabricating a thermoelectric converter that includes providing a layer of a Silicon-based material having a first surface and a second surface, opposite to and separated from the first surface by a Silicon-based material layer thickness; forming a plurality of first thermoelectrically active elements of a first thermoelectric semiconductor material having a first Seebeck coefficient, and forming a plurality of second thermoelectrically active elements of a second thermoelectric semiconductor material having a second Seebeck coefficient, wherein the first and second thermoelectrically active elements are formed to extend through the Silicon-based material layer thickness, from the first surface to the second surface; forming electrically conductive interconnections in correspondence of the first surface and of the second surface of the layer of Silicon-based material, for electrically interconnecting the plurality of first thermoelectrically active elements and the plurality of second thermoelectri

Abstract: A pressure sensing device may include a body configured to distribute a load applied between first and second parts positioned one against the other, and a pressure sensor carried by the body. The pressure sensor may include a support body, and an IC die mounted with the support body and defining a cavity. The IC die may include pressure sensing circuitry responsive to bending associated with the cavity, and an IC interface coupled to the pressure sensing circuitry.

Abstract: A projective MEMS device, including: a fixed supporting structure made at least in part of semiconductor material; and a number of projective modules. Each projective module includes an optical source, fixed to the fixed supporting structure, and a microelectromechanical actuator, which includes a mobile structure and varies the position of the mobile structure with respect to the fixed supporting structure. Each projective module further includes an initial optical fiber, which is mechanically coupled to the mobile structure and optically couples to the optical source according to the position of the mobile structure.

Abstract: Displacement transducer device, adapted to be coupled to reference points of a structure, includes a first element integrally securable to a first reference point of the structure, first and second magnets arranged so as to magnetically repel one another, a transducer arranged proximate the first and second magnets so as to detect a variation in the magnetic field between the first and second magnet and to convert the variation into a signal processed by a processing unit, the displacement transducer device includes a second element integrally securable to a second reference point of the structure, and one of the first or second magnet or transducer being connected to the first element and the remaining elements of the first or second magnet or transducer being connected to the second element such that a relative movement of the first or the second reference point causes a variation in the magnetic field.

Abstract: A pressure sensing device may include a body configured to distribute a load applied between first and second parts positioned one against the other, and a pressure sensor carried by the body. The pressure sensor may include a support body, and an IC die mounted with the support body and defining a cavity. The IC die may include pressure sensing circuitry responsive to bending associated with the cavity, and an IC interface coupled to the pressure sensing circuitry.

Abstract: A packaged pressure sensor, comprising: a MEMS pressure-sensor chip; and an encapsulating layer of elastomeric material, in particular PDMS, which extends over the MEMS pressure-sensor chip and forms a means for transferring a force, applied on a surface thereof, towards the MEMS pressure-sensor chip.

Abstract: A tensile stress measurement device is to be attached to an object to be measured. The tensile stress measurement device may include an IC having a semiconductor substrate and tensile stress detection circuitry, the semiconductor substrate having opposing first and second attachment areas. The tensile stress measurement device may include a first attachment plate coupled to the first attachment area and extending outwardly to be attached to the object to be measured, and a second attachment plate coupled to the second attachment area and extending outwardly to be attached to the object to be measured. The tensile stress detection circuitry may be configured to detect a tensile stress imparted on the first and second attachment plates when attached to the object to be measured.

Abstract: A packaged pressure sensor, comprising: a MEMS pressure-sensor chip; and an encapsulating layer of elastomeric material, in particular PDMS, which extends over the MEMS pressure-sensor chip and forms a means for transferring a force, applied on a surface thereof, towards the MEMS pressure-sensor chip.

Abstract: A pressure sensor with double measuring scale includes: a flexible body designed to undergo deflection as a function of a the pressure; piezoresistive transducers for detecting the deflection; a first focusing region designed to concentrate, during a first operating condition, a first value of the pressure in a first portion of the flexible body so as to generate a deflection of the first portion of the flexible body; and a second focusing region designed to concentrate, during a second operating condition, a second value of said pressure in a second portion of the flexible body so as to generate a deflection of the second portion of the flexible body. The piezoresistive transducers correlate the deflection of the first portion of the flexible body to the first pressure value and the deflection of the second portion of the flexible body to the second pressure value.

Abstract: An integrated electronic device, for detecting for detecting changes in an environmental parameter indicative of an environment surrounding the device, includes: a first conductive element and a second conductive element; a measurement circuit including a first measurement terminal and a second measurement terminal respectively coupled to the first conductive element and the second conductive element. The measurement circuit is configured to provide an electrical potential difference between the first conductive element and the second conductive element is configured to determine a change in an impedance of an electromagnetic circuit including the first conductive element and the second conductive element and formed between the first measurement terminal and the second measurement terminal. The device determines that an increase in a presence of water within the environment has occurred in response to a decrease in a real part of the impedance of the electromagnetic circuit.

Abstract: A load-sensing device is arranged in a package forming a chamber. The package has a deformable substrate configured, in use, to be deformed by an external force. A sensor unit is positioned in direct contact with the deformable substrate and is configured to detect deformations of the deformable substrate. An elastic element within of the chamber is arranged to act between the package and the sensor unit to generate, on the sensor unit, a force keeping the sensor unit in contact with the deformable substrate. The deformable substrate may be a base of the package, and the elastic element may be a metal lamina arranged between the lid of the package and the sensor unit. The sensor unit may be a semiconductor die integrating piezoresistors.

Abstract: A projective MEMS device, including: a fixed supporting structure made at least in part of semiconductor material; and a number of projective modules. Each projective module includes an optical source, fixed to the fixed supporting structure, and a microelectromechanical actuator, which includes a mobile structure and varies the position of the mobile structure with respect to the fixed supporting structure. Each projective module further includes an initial optical fiber, which is mechanically coupled to the mobile structure and optically couples to the optical source according to the position of the mobile structure.

Abstract: An integrated electronic device, for detecting for detecting changes in an environmental parameter indicative of an environment surrounding the device, includes: a first conductive element and a second conductive element; a measurement circuit including a first measurement terminal and a second measurement terminal respectively coupled to the first conductive element and the second conductive element. The measurement circuit is configured to provide an electrical potential difference between the first conductive element and the second conductive element is configured to determine a change in an impedance of an electromagnetic circuit including the first conductive element and the second conductive element and formed between the first measurement terminal and the second measurement terminal. The device determines that an increase in a presence of water within the environment has occurred in response to a decrease in a real part of the impedance of the electromagnetic circuit.

Abstract: A pressure sensing device may include a body configured to distribute a load applied between first and second parts positioned one against the other, and a pressure sensor carried by the body. The pressure sensor may include a support body, and an IC die mounted with the support body and defining a cavity. The IC die may include pressure sensing circuitry responsive to bending associated with the cavity, and an IC interface coupled to the pressure sensing circuitry.

Abstract: A projective MEMS device, including: a fixed supporting structure made at least in part of semiconductor material; and a number of projective modules. Each projective module includes an optical source, fixed to the fixed supporting structure, and a microelectromechanical actuator, which includes a mobile structure and varies the position of the mobile structure with respect to the fixed supporting structure. Each projective module further includes an initial optical fiber, which is mechanically coupled to the mobile structure and optically couples to the optical source according to the position of the mobile structure.