Abstract: An assembly structure for an electronic integrated power circuit, which circuit is fabricated on a semiconductor die having a plurality of contact pads associated with said integrated circuit and connected electrically to respective leads of said structure, wherein a shield element is coupled thermally to said die by a layer of an adhesive material.

Abstract: A pressure sensor including a pressure-sensor element having a monolithic body of semiconductor material, and a first main face and a second main face acting on which is a stress resulting from a pressure, the value of which is to be determined; and a package enclosing the pressure-sensor element. The package has an inner chamber containing liquid material, and the pressure-sensor element is arranged within the inner chamber in such a manner that the first and second main faces are both in contact with the liquid material. In particular, the liquid material is a silicone gel.

Abstract: In a micro-electromechanical structure, a rotor has a centroidal axis and includes a suspended structure which carries mobile electrodes. A stator carries fixed electrodes facing the mobile electrodes. The suspended structure is connected to a rotor-anchoring region via elastic elements. The stator includes at least one stator element, which carries a plurality of fixed electrodes and is fixed to a stator-anchoring region. One of the rotor-anchoring regions and stator-anchoring regions extends along the centroidal axis and at least another of the rotor-anchoring regions and stator-anchoring regions extends in the proximity of the centroidal axis.

Abstract: A micro-electro-mechanical device formed by a body of semiconductor material having a thickness and defining a mobile part and a fixed part. The mobile part is formed by a mobile platform, supporting arms extending from the mobile platform to the fixed part, and by mobile electrodes fixed to the mobile platform. The fixed part has fixed electrodes facing the mobile electrodes, a first biasing region fixed to the fixed electrodes, a second biasing region fixed to the supporting arms, and an insulation region of insulating material extending through the entire thickness of the body. The insulation region insulates electrically at least one between the first and the second biasing regions from the rest of the fixed part.

Abstract: A micro-electro-mechanical device formed by a body of semiconductor material having a thickness and defining a mobile part and a fixed part. The mobile part is formed by a mobile platform, supporting arms extending from the mobile platform to the fixed part, and by mobile electrodes fixed to the mobile platform. The fixed part has fixed electrodes facing the mobile electrodes, a first biasing region fixed to the fixed electrodes, a second biasing region fixed to the supporting arms, and an insulation region of insulating material extending through the entire thickness of the body. The insulation region insulates electrically at least one between the first and the second biasing regions from the rest of the fixed part.

Abstract: A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

Abstract: A power amplifier comprising at least a load element and at least an active element inserted, in series to each other, between a first and a second voltage reference is described. Advantageously, according to an embodiment of the invention, the load element comprises a DMOS transistor.

Abstract: In a micro-electromechanical structure, a rotor has a centroidal axis and includes a suspended structure which carries mobile electrodes. A stator carries fixed electrodes facing the mobile electrodes. The suspended structure is connected to a rotor-anchoring region via elastic elements. The stator includes at least one stator element, which carries a plurality of fixed electrodes and is fixed to a stator-anchoring region. One of the rotor-anchoring regions and stator-anchoring regions extends along the centroidal axis and at least another of the rotor-anchoring regions and stator-anchoring regions extends in the proximity of the centroidal axis.

Abstract: The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

Abstract: A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

Abstract: A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

Abstract: The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

Abstract: The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

Abstract: A method of producing suspended elements for electrical connection between two portions of a micro-mechanism that can move relative to one another provides for the formation of a layer of sacrificial material, the formation of the electrical connection elements on the layer of sacrificial material, and the selective removal of the layer of sacrificial material beneath the electrical connecting elements, the layer of sacrificial material being a thin film with at least one adhesive side that can be applied dry to the surface of the micro-mechanism.

Abstract: A power amplifier comprising at least a load element and at least an active element inserted, in series to each other, between a first and a second voltage reference is described. Advantageously, according to an embodiment of the invention, the load element comprises a DMOS transistor.

Abstract: A micro-electro-mechanical device formed by a body of semiconductor material having a thickness and defining a mobile part and a fixed part. The mobile part is formed by a mobile platform, supporting arms extending from the mobile platform to the fixed part, and by mobile electrodes fixed to the mobile platform. The fixed part has fixed electrodes facing the mobile electrodes, a first biasing region fixed to the fixed electrodes, a second biasing region fixed to the supporting arms, and an insulation region of insulating material extending through the entire thickness of the body. The insulation region insulates electrically at least one between the first and the second biasing regions from the rest of the fixed part.

Abstract: A micromachined device made of semiconductor material is formed by: a semiconductor body; an intermediate layer set on top of the semiconductor body; and a substrate, set on top of the intermediate layer. A cavity extends in the intermediate layer and is delimited laterally by bottom fixed regions, at the top by the substrate, and at the bottom by the semiconductor body. The bottom fixed regions form fixed electrodes, which extend in the intermediate layer towards the inside of the cavity. An oscillating element is formed in the substrate above the cavity and is separated from top fixed regions through trenches, which extend throughout the thickness of the substrate. The oscillating element is formed by an oscillating platform set above the cavity, and by mobile electrodes, which extend towards the top fixed regions in a staggered way with respect to the fixed electrodes. The fixed electrodes and mobile electrodes are thus comb-fingered in plan view but formed on different levels.

Abstract: An assembly structure for an electronic integrated power circuit, which circuit is fabricated on a semiconductor die having a plurality of contact pads associated with said integrated circuit and connected electrically to respective leads of said structure, wherein a shield element is coupled thermally to said die by a layer of an adhesive material.

Abstract: The manufacture process includes: forming a first wafer of semiconductor material housing integrated electronic components forming a microactuator control circuit and a signal preamplification circuit; forming microactuators, each including a rotor and a stator, in a surface portion of a second wafer of semiconductor material; attaching the second wafer to the first wafer, with the surface portion of the second wafer facing the first wafer; thinning the second wafer; attaching the second wafer to a third wafer to obtain a composite wafer; thinning the first wafer; cutting the composite wafer into a plurality of dice connected to a protection chip; removing the protection chip; attaching read/write transducers to the dice; and attaching the dice to supporting blocks for hard-disk drivers.

Abstract: An electrical connection structure having connection elements which electrically connect a movable part to a fixed part of a microelectromechanical device, for example a microactuator. The movable part and fixed part are separated by trenches and are mechanically connected by spring elements, which determine, together with the connection elements, the torsional rigidity of the microelectromechanical device. Each connection element is formed by multiple sub-arms connected in parallel and having a common movable anchorage region anchored to the movable part, and a common fixed anchorage region anchored to the fixed part, whereby the mechanical resistance of the connection elements is negligible. The sub-arms have a width equal to a sub-multiple of the width necessary in case of a single connection element for the latter to have a preset electrical resistance, which is determined in the design.