Abstract: A semiconductor package substrate with embedded crack cessation structures and methods of forming the same is provided. Crack cessation structures include blind vias structures, through vias structures, and methods of forming the same are provided. Crack cessation structures may be formed by trenching of one or more structures, and deposition of metallic or insulative materials to form a crack cessation structures in the semiconductor package substrate core.

Abstract: A method and apparatus are provided for manufacturing a packaged assembly by attaching a plurality of multi-height integrated circuit components to an carrier or package substrate with embedded active and/or passive circuit elements and then forming an encapsulating molding compound to cover the multi-height integrated circuit components and then etching or grinding the encapsulating molding compound to expose each of the integrated circuit components at a planar heat dissipation surface so that a heat sink lid/cover can be formed with one or more thermal conductive layers to contact each of the exposed integrated circuit components, thereby enabling removal of heat from the integrated circuit components and the embedded active and/or passive circuit elements of the package substrate.

Abstract: A semiconductor package substrate with embedded passive devices and methods of forming the same is provided. Embedded passive devices include inductors and inductor modules and methods of forming the same are provided. Embedded inductors may be formed by deposition of magnetic core material, trenching of one or more channels, and placement of conductive wires to form an module embeddable in the semiconductor package substrate core. Provided are methods and apparatus for formation of embeddable pot-core, toroidal, and helical inductors.

Abstract: In integrated circuit packages, a coaxial pair of signals are routed through a plated through hole between circuitry on one face of the core substrate material with circuitry on an opposing face of the core substrate material. Provided are methods and apparatuses where signals are routed within a concentric reference conductor within traditional package substrates. Methods for forming a hole in the core substrate material through which the coaxial pair of signals is passed on a fine pitch.

Abstract: A system and method for rapidly accessing a tourniquet located in a pouch with a pull-away cover includes a tear-away cover. The tourniquet holder allows users to safely store in a fabric pouch a prepared tourniquet that is quickly accessible and coupled to a removable cover of the pouch. Users are able to fold the tourniquet in a manner that allows the tourniquet to be removed from the pouch and used nearly instantaneously.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A system and method for rapidly accessing a tourniquet located in a pouch with a pull-away cover. The tourniquet holder allows users to safely store in a fabric pouch a prepared tourniquet that is quickly accessible and coupled to a removable cover of the pouch. Users are able to fold tourniquet in a manner that allow the tourniquet to be removed from the pouch and used nearly instantaneously.

Abstract: Various interposers and method of manufacturing related thereto are disclosed. In one aspect, a method of manufacturing is provided that includes coupling an identification structure to an interposer. The identification structure is operable to provide identification information about the interposer. The identification structure is programmable to create or alter the identification information.

Abstract: A system and method for rapidly accessing a tourniquet located in a pouch with a pull-away cover. The tourniquet holder allows users to safely store in a fabric pouch a prepared tourniquet that is quickly accessible and coupled to a removable cover of the pouch. Users are able to fold tourniquet in a manner that allow the tourniquet to be removed from the pouch and used nearly instantaneously.

Abstract: Various interposers and methods of manufacturing related thereto are disclosed. In one aspect, an apparatus is provided that includes an interposer that has a first side and a second side opposite the first side. The first side has a first reticle field and a second reticle field larger than the first reticle field. Plural conductor pads are positioned on the first side in the first reticle field. Plural dummy conductor pads are positioned on the first side in the second reticle field and outside the first reticle field.

Abstract: Various semiconductor workpieces with selective backside metallizations and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor workpiece that has multiple dies. A backside metallization is fabricated on a first die of the dies but not on a second die of the dies.

Abstract: Various interposers and methods of manufacturing related thereto are disclosed. In one aspect, an apparatus is provided that includes an interposer that has a first side and a second side opposite the first side. The first side has a first reticle field and a second reticle field larger than the first reticle field. Plural conductor pads are positioned on the first side in the first reticle field. Plural dummy conductor pads are positioned on the first side in the second reticle field and outside the first reticle field.

Abstract: A method of manufacturing is provided that includes applying a thermal interface tape to a side of a semiconductor wafer that includes at least one semiconductor chip. The thermal interface material tape is positioned on the at least one semiconductor chip. The at least one semiconductor chip is singulated from the semiconductor wafer with at least a portion of the thermal interface tape still attached to the semiconductor chip.

Abstract: Various semiconductor workpieces with selective backside metallizations and methods of making the same are disclosed. In one aspect, a method of manufacturing is provided that includes providing a semiconductor workpiece that has multiple dies. A backside metallization is fabricated on a first die of the dies but not on a second die of the dies.

Abstract: Various through silicon via capacitors and methods of fabricating the same are disclosed. In one aspect, an apparatus is provided that includes a semiconductor substrate with a portion doped with a first impurity type and a doped region of a second impurity type in the portion of the semiconductor substrate. The doped region is operable to function as a first capacitor plate. A first via hole is in the doped region. The first via hole has a first sidewall. A first insulating layer is on the first sidewall. The first insulating layer is operable to function as a capacitor dielectric. A first conductive via is in the first via hole. The first conductive via is operable to function as a second capacitor plate.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: Various semiconductor chip and interposer devices are disclosed. In one aspect, an apparatus is provided that includes an interposer, a first semiconductor chip mounted on the interposer and a second semiconductor chip mounted on and electrically connected to the first semiconductor chip by the interposer. The second semiconductor chip includes offloaded logic of the first semiconductor chip.

Abstract: A semiconductor chip with conductive vias and a method of manufacturing the same are disclosed. The method includes forming a first plurality of conductive vias in a layer of a first semiconductor chip. The first plurality of conductive vias includes first ends and second ends. A first conductor pad is formed in ohmic contact with the first ends of the first plurality of conductive vias.

Abstract: A method of assembling a semiconductor chip device is provided that includes placing an interposer on a first semiconductor chip. The interposer includes a first surface seated on the first semiconductor chip and a second surface adapted to thermally contact a heat spreader. The second surface includes a first aperture. A second semiconductor chip is placed in the first aperture.