Abstract: A shielded probe apparatus is provided with a shielded probe and a tri-axial cable that are electrically connected within a shielded chassis. The shielded probe apparatus is capable of electrically testing a semiconductor device at a sub 100 fA operating current and an operating temperature up to 300 C.

Abstract: A probe apparatus and method of terminating a probe that probes a semiconductor device with a signal cable from a tester side by side at a proximal end of the probe and a distal end of the signal cable. In one embodiment, the probe apparatus includes: a chassis; a dielectric block mounted in the chassis for retaining the probe, the probe extending on the chassis from a proximal end of the probe to the dielectric block, extending through the dielectric block, and projecting from the dielectric block towards the semiconductor device at a distal end of the probe; and a terminating apparatus, mounted in the chassis, for terminating the proximal end of the probe with a distal end of the signal cable side by side.

Abstract: A tile used to hold one or more probes for testing a semiconductor wafer. The tile has one or more sites for inserting one or more probes to test the semiconductor wafer. Each site has one or more holes. Each hole is coupled with a slot forming an angle. A probe is inserted into the file from a top of the tile through the hole and seated on the slot. The probe has a probe tip. The probe fip is in contact with the semiconductor wafer at one end of the slot at a bottom of the file. The probe fip is aligned with an X and Y coordinates of a bond pad on the semiconductor wafer.

Abstract: A shielded probe apparatus is provided with a shielded probe and a tri-axial cable that are electrically connected within a shielded chassis. The shielded probe apparatus is capable of electrically testing a semiconductor device at a sub 100 fA operating current and an operating temperature up to 300 C.

Abstract: A probe needle apparatus having a conductive central core with alternating layers of dielectric and conductive materials is provided. The apparatus includes the conductive central core, a first layer of dielectric material applied to maintain electrical access to the conductive central core while providing continuous isolation of the conductive central core elsewhere, and a conductive driven guard layer applied around the first layer of dielectric material in electrical isolation from the conductive central core. The conductive driven guard layer is applied on the first layer of dielectric material with a mask on an end of the conductive central core to prevent the conductive driven guard layer from touching the conductive central core.

Abstract: A method and apparatus for terminating a probe that probes a semiconductor device with a signal cable from a tester is provided to connect layers of the probe to layers of the signal cable side by side. The probe and signal cable can be a co-axial or tri-axial probe and signal cable, respectively. A center conductive probe needle of the probe is disposed side by side with and electrically connects to a center signal conductor of the signal cable. A dielectric layer of the probe is disposed side by side with and connects to a dielectric layer of the signal cable. A conductive guard layer of the probe is disposed side by side with and electrically connects to a conductive dispersion/guard layer of the signal cable, and a sleeve of the probe is disposed side by side with and connects to a sleeve of the signal cable. In a tri-axial embodiment, a second dielectric layer of the probe is disposed side by side with and connects to a second dielectric layer of the signal cable.

Abstract: A tile used to hold one or more probes for testing a semiconductor wafer. The tile has one or more sites for inserting one or more probes to test the semiconductor wafer. Each site has one or more holes. Each hole is coupled with a slot forming an angle. A probe is inserted into the tile from a top of the tile through the hole and seated on the slot. The probe has a probe tip. The probe tip is in contact with the semiconductor wafer at one end of the slot at a bottom of the tile. The probe tip is aligned with an X and Y coordinates of a bond pad on the semiconductor wafer.

Abstract: A method and apparatus for terminating a probe that probes a semiconductor device with a signal cable from a tester is provided to connect layers of the probe to layers of the signal cable side by side. The probe and signal cable can be a co-axial or tri-axial probe and signal cable, respectively. A center conductive probe needle of the probe is disposed side by side with and electrically connects to a center signal conductor of the signal cable. A dielectric layer of the probe is disposed side by side with and connects to a dielectric layer of the signal cable. A conductive guard layer of the probe is disposed side by side with and electrically connects to a conductive dispersion/guard layer of the signal cable, and a sleeve of the probe is disposed side by side with and connects to a sleeve of the signal cable. In a tri-axial embodiment, a second dielectric layer of the probe is disposed side by side with and connects to a second dielectric layer of the signal cable.

Abstract: A tile used to hold one or more probes for testing a semiconductor wafer. The tile has one or more sites for inserting one or more probes to test the semiconductor wafer. Each site has one or more holes. Each hole is coupled with a slot forming an angle. A probe is inserted into the tile from a top of the tile through the hole and seated on the slot. The probe has a probe tip. The probe tip is in contact with the semiconductor wafer at one end of the slot at a bottom of the tile. The probe tip is aligned with an X and Y coordinates of a bond pad on the semiconductor wafer.

Abstract: A shielded probe apparatus is provided with a shielded probe and a tri-axial cable that are electrically connected within a shielded chassis. The shielded probe apparatus is capable of electrically testing a semiconductor device at a sub 100 fA operating current and an operating temperature up to 300C.

Abstract: A tile used to hold one or more probes for testing a semiconductor wafer. The tile has one or more sites for inserting one or more probes to test the semiconductor wafer. Each site has one or more holes. Each hole is coupled with a slot forming an angle. A probe is inserted into the tile from a top of the tile through the hole and seated on the slot. The probe has a probe tip. The probe tip is in contact with the semiconductor wafer at one end of the slot at a bottom of the tile. The probe tip is aligned with X and Y coordinates of a bond pad on the semiconductor wafer.

Abstract: A tile used to hold one or more probes for testing a semiconductor wafer. The tile has one or more sites for inserting one or more probes to test the semiconductor wafer. Each site has one or more holes. Each hole is coupled with a slot forming an angle. A probe is inserted into the tile from a top of the tile through the hole and seated on the slot. The probe has a probe tip. The probe tip is in contact with the semiconductor wafer at one end of the slot at a bottom of the tile. The probe tip is aligned with an X and Y coordinates of a bond pad on the semiconductor wafer.

Abstract: A system and method for a plurality of probe tiles and a probe platform for electrically probing a semiconductor wafer over a broad area of the semiconductor wafer. Nine ceramic tiles are configured in a flat three by three matrix, and are held in place by a probing platform. Each tile may be moved independently in an X and Y direction. The probe platform has three control knobs on the side to move a tile in the X direction and three control knobs on the front to move a tile in the Y direction. The control knobs are attached to transmission shafts which slide back and forth into three ball detent positions. The ball detent positions determine which tile is engaged and can be manipulated. The ceramic tiles hold self-aligning tungsten probe tips to permit semiconductor wafer testing over a wide temperature range.