Abstract: Disclosed herein is a heat radiating substrate including: a heat radiating plate having a step formed so that one side and the other side thereof have thicknesses different from each other; a conductor pattern layer formed over the heat radiating plate and including a mounting pad on which a control device and a power device are mounted and a circuit pattern; and an insulating layer formed between the heat radiating plate and the conductor pattern layer.

Abstract: There is provided an inverter including: an inverter unit including at least one inverter arm having a plurality of switches, and switching the input power according to control to output an alternating current power; at least one driving unit including at least one high voltage gate driving unit having a plurality high voltage gate drivers connected to one another in series between an input terminal of an instruction signal instructing a switching control of an inverter unit and an output terminal of a control signal controlling switching of the inverter unit to control switching driving of a high side switch and including at least one low voltage gate driver to control switching driving of a low side switch; and at least one bootstrap unit charging/discharging and dividing a voltage generated at the time of switching the plurality of switches according to switching control of the driving unit.

Abstract: Disclosed herein is a heat radiating substrate including: a heat radiating plate including a plurality of holes having a predetermined depth and formed in a lower portion of one side thereof; a conductor pattern layer formed on the heat radiating plate and including a mounting pad on which a control device and a power device are mounted and a circuit pattern; and an insulating layer formed between the heat radiating plate and the conductor pattern layer.

Abstract: An inverter includes an inverter unit including at least one inverter arm having at least one high side switch and at least one low side switch connected to each other in series between a ground and an input power terminal providing input power having a preset voltage level, and switching the input power to output AC power; and a high voltage gate driving circuit unit including at least one high voltage gate driving unit having a plurality of high voltage gate drivers connected in series between an input terminal of an instruction signal requesting a switching control of the inverter unit and an output terminal of a control signal controlling switching of the inverter unit, such that switching of the high side switch is controlled, and voltage generated at the time of switching the high side switch is divided and applied to the plurality of high voltage gate drivers.

Abstract: Disclosed herein are a semiconductor device, and a method for manufacturing the semiconductor device. The semiconductor device includes a semiconductor substrate, a base region formed on an upper region of an inside of the semiconductor substrate, at least one gate electrode that penetrates through the base region and has an inverted triangular shape, a gate insulating film formed to enclose an upper portion of the semiconductor substrate and the gate electrode, an inter-layer insulating film formed on an upper portion of the gate electrode and the gate insulating film, an emitter region formed inside the base region and on both sides of the gate electrode, an emitter metal layer formed on an upper portion of the base region and inter-layer insulating film, and a buffer region formed to enclose a lower portion of the gate electrode and to be spaced apart from the base region.

Abstract: A gate driver circuit applicable to an inductive load, an inverter module, and an inverter apparatus are provided. The gate driver circuit includes a high side driver having a first output side and a first control side and generating a high side gate signal; and a low side driver generating a low side gate signal, wherein the high side driver includes a first VS pad formed on the first output side; a first output pad formed on the first output side, a first VB pad formed on the first control side; and a second VB pad formed to be adjacent to the first VB pad on the first control side and electrically connected to the first VS pad; and a first circuit unit connected to the plurality of pads to provide the high side gate signal through the first output pad.

Abstract: Disclosed herein is a power module package including an external connection terminal, a substrate in which a fastening unit allowing one end of the external connection terminal to be insertedly fastened thereinto is formed to penetrate in a thickness direction thereof, and a semiconductor chip mounted on one surface of the substrate.

Abstract: There is provided a semiconductor package module, and more particularly, a semiconductor package module constituted by modularizing power semiconductor devices incapable of being able to be easily integrated due to heat generated therefrom. To this end, the semiconductor package module includes a plurality of semiconductor packages; and a plurality of semiconductor packages; and a heat dissipation member having a pipe shape including a flow channel formed therein and including at least one or more through holes into which the semiconductor packages are inserted.

Abstract: Disclosed herein is a heat dissipation system for a power module, including: first cooling medium flow parts and second cooling medium flow parts allowing cooling media to flow in first and second directions, respectively.

Abstract: Disclosed herein is a double side cooling power semiconductor module including: a first cooler having a concave part formed in one surface thereof in a thickness direction; a first semiconductor chip mounted on the concave part of the first cooler; a second cooler having one surface and the other surface and formed on one surface of the first cooler so that one surface thereof contacts the first semiconductor chip; a circuit board formed on the other surface of the second cooler; a second semiconductor chip mounted on the circuit board; and a flexible substrate having a circuit layer electrically connecting the first and second semiconductor chips to each other.

Abstract: Provided are a semiconductor package capable of packaging and modularizing power semiconductor devices which are difficult to integrate due to heat generation, a semiconductor package module using the same, and a mounting structure thereof. The semiconductor package includes: a common connection terminal formed to have a flat plate shape; first and second electronic devices respectively bonded to both surfaces of the common connection terminals; first and second connection terminals having a flat plate shape and bonded to the first electronic device; and a third connection terminal having a flat plate shape and bonded to the second electronic device.

Abstract: Disclosed herein is a substrate for a power module. The substrate may include a metal base substrate, an insulating layer formed on the metal base substrate and including a plurality of insulating adhesion layers and a ceramic filler layer formed on a joining interface between the plurality of insulating adhesion layers, and a circuit layer formed on the insulating layer.

Abstract: There are provided a power factor correction circuit capable of transferring extra power to a ground before performing switching for a power factor correction to thereby reduce a switching loss generated in switching for a power factor correction, and a power supply device and a motor driving device having the same. The power factor correction circuit includes: a main switch switching input power to adjust a phase difference between a current and a voltage of the input power; and an auxiliary switch switched on before the main switch is switched on, to thereby form a transmission path for extra power of the main switch.

Abstract: A 3-phase inverter module is provided, which includes first and second U-phase switching elements connected in series to each other to constitute a U-phase inverter, first and second V-phase switching elements connected in series to each other to constitute a V-phase inverter, first and second W-phase switching elements connected in series to each other to constitute a W-phase inverter, a U-phase high voltage integrated circuit for generating a control signal for controlling the U-phase inverter according to a U-phase input signal, which has a fault-out terminal for the U-phase, a V-phase high voltage integrated circuit for generating a control signal for controlling the V-phase inverter according to a V-phase input signal, which has a fault-out terminal for the V-phase, and a W-phase high voltage integrated circuit for generating a control signal for controlling the W-phase inverter according to a W-phase input signal, which has a fault-out terminal for the W-phase.

Abstract: The motor driving inverter circuit module includes first-phase, second-phase, and third-phase high voltage drivers generating first-phase, second-phase, and third-phase upper arm and lower arm driving signals in response to input signals for driving the first-phase, second-phase, and third-phase upper and lower arms and a first-phase, second-phase, and third-phase upper arm and lower arm transistors, generating first-phase, second-phase, and third-phase motor driving output signals in response to the first-phase, second-phase, and third-phase upper arm and lower arm driving signals of the first-phase, second-phase, and third-phase high voltage drivers. The first-phase, second-phase, and third-phase high voltage drivers and the first-phase, second-phase, and third-phase upper arm and lower arm transistors are respectively integrated into separate chips.

Abstract: A power module for energy recovery and sustain of a plasma display panel is disclosed. The power module includes a first high-voltage integrated circuit which is of a single type, a first switching element for receiving an output from the first high-voltage integrated circuit, and performing a switching operation in response to the output received from the first high-voltage integrated circuit, a first diode connected to one terminal of the first switching element, a second high-voltage integrated circuit which is of a single type, and is arranged symmetrically with the first high-voltage integrated circuit, a second switching element for receiving an output from the second high-voltage integrated circuit, and performing a switching operation in response to the output received from the second high-voltage integrated circuit, and a second diode connected to one terminal of the second switching element.

Abstract: An Insulated Gate Bipolar Transistor (IGBT) fault protection system is provided. The fault protection system includes a GVPA, a gate voltage clamper, and a soft-off unit. The GVPA analyzes a gate voltage pattern of an IGBT to determine whether or not a fault has occurred. The gate voltage clamper prevents an increase in a gate voltage of the IGBT according to an output signal that the GVPA outputs when a fault has occurred. The soft-off unit softly turns off the IGBT according to an output signal that the GVPA outputs when a fault has occurred.

Abstract: The motor driving inverter circuit module includes first-phase, second-phase, and third-phase high voltage drivers generating first-phase, second-phase, and third-phase upper arm and lower arm driving signals in response to input signals for driving the first-phase, second-phase, and third-phase upper and lower arms and a first-phase, second-phase, and third-phase upper arm and lower arm transistors, generating first-phase, second-phase, and third-phase motor driving output signals in response to the first-phase, second-phase, and third-phase upper arm and lower arm driving signals of the first-phase, second-phase, and third-phase high voltage drivers. The first-phase, second-phase, and third-phase high voltage drivers and the first-phase, second-phase, and third-phase upper arm and lower arm transistors are respectively integrated into separate chips.

Abstract: The motor driving inverter circuit module includes first-phase, second-phase, and third-phase high voltage drivers generating first-phase, second-phase, and third-phase upper arm and lower arm driving signals in response to input signals for driving the first-phase, second-phase, and third-phase upper and lower arms and a first-phase, second-phase, and third-phase upper arm and lower arm transistors, generating first-phase, second-phase, and third-phase motor driving output signals in response to the first-phase, second-phase, and third-phase upper arm and lower arm driving signals of the first-phase, second-phase, and third-phase high voltage drivers. The first-phase, second-phase, and third-phase high voltage drivers and the first-phase, second-phase, and third-phase upper arm and lower arm transistors are respectively integrated into separate chips.

Abstract: An Insulated Gate Bipolar Transistor (IGBT) fault protection system is provided. The fault protection system includes a GVPA, a gate voltage clamper, and a soft-off unit. The GVPA analyzes a gate voltage pattern of an IGBT to determine whether or not a fault has occurred. The gate voltage clamper prevents an increase in a gate voltage of the IGBT according to an output signal that the GVPA outputs when a fault has occurred. The soft-off unit softly turns off the IGBT according to an output signal that the GVPA outputs when a fault has occurred.