Abstract: A plasma doping method and a plasma doping apparatus, having a superior in-plane uniformity of an amorphous layer formed on a sample surface, are provided. In the plasma doping method by which plasma is generated within a vacuum chamber, and impurity ions contained in the plasma are caused to collide with the surface of the sample so as to quality-change the surface of the sample into an amorphous state thereof, a plasma irradiation time is adjusted in order to improve an in-plane uniformity. If the plasma irradiation time becomes excessively short, then a fluctuation of the plasma is transferred to depths of an amorphous layer formed on a silicon substrate, so that the in-plane uniformity is deteriorated. On the other hand, if the irradiation time becomes excessively long, then an effect for sputtering the surface of the silicon substrate by using the plasma becomes dominant, then the in-plane uniformity is deteriorated.

Abstract: An object of the invention is to provide a plasma doping method and a plasma doping apparatus in which uniformity of concentration of impurities introduced into a sample surface are excellent. The plasma doping apparatus of the invention introduces a predetermined mass flow of gas from a gas supply device (2) into a vacuum chamber (1) while discharging the gas through an exhaust port (11) by a turbo-molecular pump (3), which is an exhaust device in order to maintain the vacuum chamber (1) under a predetermined pressure by a pressure adjusting valve (4). A high-frequency power source (5) supplies high-frequency power of 13.56 MHz to a coil (8) disposed in the vicinity of a dielectric window (7) opposite a sample electrode (6) in order to generate an inductively coupled plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying high-frequency power to the sample electrode (6) is provided.

Abstract: An object of the invention is to provide a plasma doping method excellent in the uniformity of concentration of impurities introduced into the surface of a sample and a plasma processing device capable of uniformly performing plasma processing of a sample. In a plasma doping device according to the invention, a vacuum chamber (1) is evacuated with a turbo-molecular pump (3) as an exhaust device via a exhaust port 11 while a predetermined gas is being introduced from a gas supply device (2) in order to maintain the inside of the vacuum chamber (1) to a predetermined pressure with a pressure regulating valve (4). A high-frequency power of 13.56 MHz is supplied by a high-frequency power source (5) to a coil (8) provided in the vicinity of a dielectric window (7) opposed to a sample electrode (6) to generate inductive-coupling plasma in the vacuum chamber (1). A high-frequency power source (10) for supplying a high-frequency power to the sample electrode (6) is provided.

Abstract: Disclosed is a charge neutralizing device which is capable of being applied to a substrate 13 having a large area and in which electrons having low energy of 5 eV or less, and preferably 2 eV, are supplied so that charge due to ion implantation and damage by the electrons are avoided with respect to a cusp device. The charge neutralizing device includes a microwave generating unit, a plasma generating unit that generates electron plasma using a microwave generated from the microwave generating unit, and a contact unit that brings the electron plasma generated from the plasma generating unit into contact with a beam plasma region including an ion beam.

Abstract: A method of introducing an impurity and an apparatus for introducing the impurity forms an impurity layer easily in a shallower profile. Component devices manufactured taking advantage of these method or apparatus are also disclosed. When introducing a material to a solid substance which has an oxidized film or other film sticking at the surface, the present method and apparatus first removes the oxidized film and other film using at least one means selected from among the group consisting of a means for irradiating the surface of solid substance with plasma, a means for irradiating the surface of solid substance with gas and a means for dipping the surface of solid substance in a reductive liquid; and then, attaches or introduces a certain desired particle. The way of attaching, or introducing, a particle is bringing a particle-containing gas to make contact to the surface, which surface has been made to be free of the oxidized film and other film.

Abstract: It is an object to prevent functions expected originally from being unexhibited when impurities to be introduced into a solid sample are mixed with each other, and to implement plasma doping with high precision. In order to distinguish impurities which may be mixed from impurities which should not be mixed, first of all, an impurity introducing mechanism of a core is first distinguished. In order to avoid a mixture of the impurities in very small amounts, a mechanism for delivering a semiconductor substrate to be treated and a mechanism for removing a resin material to be formed on the semiconductor substrate are used exclusively.

Abstract: A method for performing plasma doping which is high in uniformity. A prescribed gas is introduced into a vacuum container from gas supply apparatus while being exhausted through an exhaust hole by a turbomolecular pump as an exhaust apparatus. The pressure in the vacuum container is kept at a prescribed value by a pressure regulating valve. High-frequency power of 13.56 MHz is supplied from a high-frequency power source to a coil which is disposed close to a dielectric window which is opposed to a sample electrode, whereby induction-coupled plasma is generated in the vacuum container. The dielectric window is composed of plural dielectric plates, and grooves are formed in at least one surface of at least two dielectric plates opposed to each other. Gas passages are formed by the grooves and a flat surface(s) opposed to the grooves, and gas flow-out holes which are formed in the dielectric plate that is closest to the sample electrode communicate with the grooves inside the dielectric window.

Abstract: A measuring device includes a magnetic shielding part for shielding an outer magnetic field, and a plurality of magnetic field sensors which are arranged in a shielding space which is formed by the magnetic shielding part, wherein the magnetic field sensor includes a plurality of magnetic field collection mechanisms which collect magnetic fields which the beam current to be measured generates, and the magnetic field collection mechanism is a cylindrical structural body which has at least a surface thereof formed of a superconductive body and includes a bridge portion which has only a portion thereof formed of a superconductive body on an outer peripheral portion thereof, and a magnetic field which the beam current to be measured generates is measured by the magnetic field sensors. Due to the arrangement of the plurality of magnetic field sensors, a beam position and a beam current can be detected.

Abstract: To provide an asher, an ashing method and an impurity doping apparatus group which can detect the interface between a surface hardening layer of a resist and an internal nonhardening layer and the interface between the nonhardening layer and a semiconductor substrate, with a high throughput. The invention provides the asher for plasma ashing the surface hardening layer formed on the resist and the internal nonhardening layer, the resist for use as a mask coated on the semiconductor substrate and doped with impurity, characterized by comprising an elipsometer for causing a linearly polarized light to enter the semiconductor substrate to detect a reflected, elliptically polarized light during plasma ashing, and detecting the interface between the hardening layer and the nonhardening layer and the interface between the nonhardening layer and the semiconductor substrate.

Abstract: An object of the invention is to provide a method and an apparatus for plasma processing which can accurately monitor an ion current applied to the surface of a sample. Predetermined gas is exhausted via an exhaust port 11 by a turbo-molecular pump 3 while introducing the gas within the vacuum chamber 1 from a gas supply device 2, and the pressure within the vacuum chamber 1 is kept at a predetermined value by a pressure regulating valve 4. A high-frequency power supply 5 for a plasma source supplies a high-frequency power to a coil 8 provided near a dielectric window 7 to generate inductively coupled plasma within the vacuum chamber 1. A high-frequency power supply 10 for the sample electrode for supplying the high-frequency power to the sample electrode 6 is provided. A matching circuit 13 for the sample electrode and a high-frequency sensor 14 are provided between the sample electrode high-frequency power supply and the sample electrode 6.

Abstract: Gas supplied to gas flow passages of a top plate from a gas supply device by gas supply lines forms flow along a vertical direction along a central axis of a substrate, so that the gas blown from gas blow holes can be made to be uniform, and a sheet resistance distribution is rotationally symmetric around a substrate center.

Abstract: There are provided a plasma doping method and apparatus which is excellent in a repeatability and a controllability of an implanting depth of an impurity to be introduced into a sample or a depth of an amorphous layer. A plasma doping method of generating a plasma in a vacuum chamber and colliding an ion in the plasma with a surface of a sample to modify a surface of a crystal sample to be amorphous, includes the steps of carrying out a plasma irradiation over a dummy sample to perform an amorphizing treatment together with a predetermined number of samples, irradiating a light on a surface of the dummy sample subjected to the plasma irradiation, thereby measuring an optical characteristic of the surface of the dummy sample, and controlling a condition for treating the sample in such a manner that the optical characteristic obtained at the measuring step has a desirable value.

Abstract: A semiconductor device includes: a first semiconductor region formed on a substrate and having an upper surface and a side surface; a first impurity region of a first conductivity type formed in an upper portion of the first semiconductor region; a second impurity region of a first conductivity type formed in a side portion of the first semiconductor region; and a gate insulating film formed so as to cover at least a side surface and an upper corner of a predetermined portion of the first semiconductor region. A radius of curvature r? of an upper corner of a portion of the first semiconductor region located outside the gate insulating film is greater than a radius of curvature r of an upper corner of a portion of the first semiconductor region located under the gate insulating film and is less than or equal to 2r.

Abstract: To provide a fine transistor of high precision. A method for fabricating a transistor comprises the step of forming a gate electrode (340) on the surface of a semiconductor substrate, the step of introducing an impurity across said gate electrode (340), and the step of activating said impurity, thereby to form a source/drain region (310, 320) in the region having said impurity introduced thereinto. In the transistor fabricating method, the step of introducing said impurity includes a plasma irradiating step. The method further comprises the step of forming, prior to said activating step, a reflection preventing film (400) on the surface of the region having said impurity introduced thereinto, so that the optical reflectivity of said impurity introduced region may be lower than the reflectivity of said gate electrode surface.

Abstract: A plasma doping method that can control a dose precisely is realized. In-plane uniformity of the dose is improved. It has been found that, if a bias is applied by irradiating B2H6/He plasma onto a silicon substrate, there is a time at which a dose of boron is made substantially uniform, and the saturation time is comparatively long and ease to stably use, compared with a time at which repeatability of an apparatus control can be secured. The invention has been finalized focusing on the result. That is, if plasma irradiation starts, a dose is initially increased, but a time at which the dose is made substantially uniform without depending on a time variation is continued. In addition, if the time is further increased, the dose is decreased. The dose can be accurately controlled through a process window of the time at which the dose is made substantially uniform without depending on the time variation.

Abstract: A semiconductor region having an upper surface and a side surface is formed on a substrate. A first impurity region is formed in an upper portion of the semiconductor region. A second impurity region is formed in a side portion of the semiconductor region. The resistivity of the second impurity region is substantially equal to or smaller than that of the first impurity region.

Abstract: To provide an impurity introducing method which can repeatedly carry out such a process that plasma irradiation for realization of amorphous and plasma doping were combined, in such a situation that steps are simple and through-put is high, without destroying an apparatus. At the time of switching over plasmas which are used in plasma irradiation for realization of amorphous and plasma doping, electric discharge is stopped, and an initial condition of a matching point of a high frequency power supply and a peripheral circuit is reset so as to adapt to plasma which is used in each step, or at the time of switching, a load, which is applied to the high frequency power supply etc., is reduced by increasing pressure and decreasing a bias voltage.

Abstract: It is intended to provide a plasma processing method and apparatus capable of increasing the uniformity of amorphyzation processing. A prescribed gas is introduced into a vacuum container 1 from a gas supply apparatus 2 through a gas inlet 11 while being exhausted by a turbomolecular pump 3 as an exhaust apparatus through an exhaust hole 12. The pressure in the vacuum container 1 is kept at a prescribed value by a pressure regulating valve 4. High-frequency electric power of 13.56 MHz is supplied from a high-frequency power source 5 to a coil 8 disposed close to a dielectric window 7 which is opposed to a sample electrode 6, whereby induction-coupled plasma is generated in the vacuum container 1. A high-frequency power source 10 for supplying high-frequency electric power to the sample electrode 6 is provided and functions as a voltage source for controlling the potential of the sample electrode 6.

Abstract: There are provided a plasma doping method and an apparatus which have excellent reproducibility of the concentration of impurities implanted into the surfaces of samples. In a vacuum container, in a state where gas is ejected toward a substrate placed on a sample electrode through gas ejection holes provided in a counter electrode, gas is exhausted from the vacuum container through a turbo molecular pump as an exhaust device, and the inside of the vacuum container is maintained at a predetermined pressure through a pressure adjustment valve, the distance between the counter electrode and the sample electrode is set to be sufficiently small with respect to the area of the counter electrode to prevent plasma from being diffused outward, and capacitive-coupled plasma is generated between the counter electrode and the sample electrode to perform plasma doping. The gas used herein is a gas with a low concentration which contains impurities such as diborane or phosphine.

Abstract: A liquid phase etching method which comprises spraying a chemically reactive liquid, with a specific speed, to a solid article, an aggregate of solid articles or a gelatinous material to be treated; and a liquid etching apparatus having a mechanism for holding a processing object to be treated and a nozzle structure for spraying a chemically reactive liquid to the processing object to be treated which is held by the mechanism. The method and apparatus allow the significant improvement of the etching rate while maintaining the accuracy of etching.