Abstract: Two-terminal active devices, such as IMPATT and Gunn diodes, are combined with passive devices in a monolithic form using a plated metal heat sink to support the active elements and a coated-on dielectric to support the passive elements. Impedance-matching circuitry is preferably placed very close to (or partially overlapping) the active device, thereby eliminating detrimental device-to-circuit transition losses.

Abstract: The disclosure relates to a monolithic circuit and method of making same which includes the use of two substrates of different semiconductor materials or two substrates of the same semiconductor material wherein the processing steps required for certain parts of the circuit are incompatible with the processing steps required for other parts of the circuit.

Abstract: The disclosure relates to a semiconductor substrate having an active area for formation of an IMPATT device which is formed as a plurality of separated fingers having a common n+ region to spread the area over which the IMPATT is disposed and which provides such additional area for dissipation of heat through the substrate.

Abstract: In a distributed IMPATT structure, power is coupled out through a side contact. That is, in previously proposed distributed IMPATT structures, the gain medium (the active region of the IMPATT) operates as a transmission line. The prior art has attempted to couple output power from the gain medium through an end contact, i.e., through a contact which is perpendicular to the primary direction of energy propagation (and also to the direction of maximum elongation) of the active medium. In the present invention, a sidewall contact extends in a direction which is parallel to the principal direction of propagation of the energy in the active medium. Thus, the sidewall contact plus the active region together can be considered as a single transmission line. This extended transmission line is also connected to a second distributed semiconductor element which functions as a varactor.

Abstract: A two-port monolithic microwave amplifier, which uses a distributed negative resistance diode with gain (such as an IMPATT diode) as an active element. The diode is tapered (increasing in width but not in thickness) so that, as the RF signal propagates along the diode, it sees a wider and wider active diode region. This diode is operated in the power-saturated region, so that, as the RF signal propagates along the diode, terminal voltage remains essentially constant, but the RF current increases. This configuration is inherently undirectional.

Abstract: In a distributed IMPATT structure, power is coupled out through a side contact. That is, in previously proposed distributed IMPATT structures the gain medium (the active region of the IMPATT) operates as a transmission line. The prior art has attempted to couple output power from the gain medium through an end contact, i.e. through a contact which intercepts the primary direction of energy propagation of the active medium. In the present invention, a side contact extends along the whole active region in a direction which is parallel to the principal direction of propagation of the energy in the active medium. Thus, the side contact plus the active region together can be considered as a single transmission line.The present invention can be configured as an oscillator, amplifier, phase shifter, or attenuator. When configured as an oscillator, multiple short active regions can be sequentially coupled to a single long microstrip, which serves as the side contact for each of the active regions.

Abstract: A method of anodizing a compound semiconductor comprises(1) plating a metal on the compound semiconductor,(2) contacting the exposed surface of the metal with an electrolyte which permits anodic oxidation of the metal, and(3) passing an electric current through the electrolyte with the exposed surface of the metal acting as an anode, the current density not exceeding 100 microamps per square centimeter of the surface and the quantity of current being more than sufficient to oxidize anodically all the metal.

Abstract: A GaAs mosfet comprises a p-type gallium arsenide single crystal having two grooves formed therein, each groove containing a layer of indium, a layer of dopant overlying the indium and a layer of Al.sub.2 O.sub.3 overlying the dopant, each groove overlying a respective n.sup.+ region of the gallium arsenide, the surface of the gallium arsenide single crystal on each side of each groove comprising native oxide to a depth contiguous to the n.sup.+ regions, and the layers of dopant being in contact with the junctions between the n.sup.+ regions and the native oxides. A flat contact pad covers the native oxide between the grooves and is in contact with the Al.sub.2 O.sub.3 of both grooves, a second contact pad covers the native oxide on the remaining side of one groove and is in contact with the dopant via an electrically ruptured part of the Al.sub.2 O.sub.