Abstract: A speech recognition system includes: a speech processor configured to identify an intention of a user included in an utterance of the user; a controller configured to identify whether a function corresponding to the intention of the utterance is performable, and if the function corresponding to the intention of the utterance is not performable, generate spoken text for requesting an other speech recognition system to perform the function corresponding to the intention of the user; and an utterance generator configured to convert the spoken text into a speech signal of an inaudible frequency band.

Abstract: A thermoplastic resin composition of the present invention comprises a rubber-modified vinyl-based graft copolymer, a first aromatic vinyl-based copolymer, a second aromatic vinyl-based copolymer, and a polyalkylene glycol, wherein the first aromatic vinyl-based copolymer is a copolymer of methyl methacrylate, methyl acrylate, an aromatic vinyl-based monomer, and a monomer copolymerizable with the aromatic vinyl-based monomer, the second aromatic vinyl-based copolymer is a copolymer of an aromatic vinyl-based monomer and a monomer copolymerizable with the aromatic vinyl-based monomer, and the weight ratio of methyl methacrylate to methyl acrylate, in the first aromatic vinyl-based copolymer, is approximately 1:0.01 to approximately 1:0.2. The thermoplastic resin composition has excellent discoloration resistance, color, transparency, and the like even after irradiation with ionizing radiation.

Abstract: A thermoplastic resin composition of the present invention comprises a rubber-modified vinyl-based graft copolymer, a first aromatic vinyl-based copolymer, a second aromatic vinyl-based copolymer, and a polyalkylene glycol, wherein the first aromatic vinyl-based copolymer is a copolymer of methyl methacrylate, methyl acrylate, an aromatic vinyl-based monomer, and a monomer copolymerizable with the aromatic vinyl-based monomer, the second aromatic vinyl-based copolymer is a copolymer of an aromatic vinyl-based monomer and a monomer copolymerizable with the aromatic vinyl-based monomer, and the weight ratio of methyl methacrylate to methyl acrylate, in the first aromatic vinyl-based copolymer, is approximately 1:0.01 to approximately 1:0.2. The thermoplastic resin composition has excellent discoloration resistance, color, transparency, and the like even after irradiation with ionizing radiation.

Abstract: A thermoplastic resin composition of the present invention comprises: a thermoplastic resin comprising a (meth)acrylic resin and an aromatic vinyl-based resin; and a siloxane compound represented by the chemical formula 1. The thermoplastic resin composition has excellent scratch resistance, mar resistance, colorability, appearance characteristics and the like.

Abstract: A thermoplastic resin composition includes a base resin including a rubber-modified vinyl graft copolymer and an aromatic vinyl resin, and a siloxane compound including a repeat unit represented by Formula 1 and a repeat unit represented by Formula 2, wherein the repeat unit represented by Formula 1 and the repeat unit represented by Formula 2 are present in a mole ratio of about 2: about 1 to about 4: about 1 in the siloxane compound: wherein R1 and R3 are each independently a hydrogen atom or a C1 to C5 alkyl group, R2 is a C2 to C10 alkylene group, R4 is C1 to C20 alkyl group, and Ar is a C6 to C20 aryl group.

Abstract: Structures and methods for deep trench capacitor connections are disclosed. The structure includes a reduced diameter top portion of the capacitor conductor. This increases the effective spacing between neighboring deep trench capacitors. Silicide or additional polysilicon are then deposited to complete the connection between the deep trench capacitor and a neighboring transistor.

Abstract: A thermoplastic resin composition of the present invention comprises: a thermoplastic resin comprising a (meth)acrylic resin and an aromatic vinyl-based resin; and a siloxane compound represented by the chemical formula 1. The thermoplastic resin composition has excellent scratch resistance, mar resistance, colorability, appearance characteristics and the like.

Abstract: A thermoplastic resin composition includes a base resin including a rubber-modified vinyl graft copolymer and an aromatic vinyl resin, and a siloxane compound including a repeat unit represented by Formula 1 and a repeat unit represented by Formula 2, wherein the repeat unit represented by Formula 1 and the repeat unit represented by Formula 2 are present in a mole ratio of about 2: about 1 to about 4: about 1 in the siloxane compound: wherein R1 and R3 are each independently a hydrogen atom or a C1 to C5 alkyl group, R2 is a C2 to C10 alkylene group, R4 is C1 to C20 alkyl group, and Ar is a C6 to C20 aryl group.

Abstract: Structures and methods for deep trench capacitor connections are disclosed. The structure includes a reduced diameter top portion of the capacitor conductor. This increases the effective spacing between neighboring deep trench capacitors. Silicide or additional polysilicon are then deposited to complete the connection between the deep trench capacitor and a neighboring transistor.

Abstract: A thermoplastic resin composition includes a thermoplastic resin including a polycarbonate resin; a siloxane compound represented by Formula 1; and surface-modified hydrophobic silica: wherein R1 and R2 are the same or different and are each independently C1 to C5 alkyl; R3 and R4 are the same or different and are each independently C2 to C10 alkylene; A1 and A2 are the same or different and are each independently a glycidoxy group, an epoxy group, an amine group, a hydroxyl group, a hydrogen atom, a vinyl group, a (meth)acryloyl group, or an aryl group; and n is an integer from 2 to 80. The thermoplastic resin composition can exhibit excellent properties in terms of impact resistance, heat resistance, scratch resistance, surface gloss, mar resistance, and the like.

Abstract: A pressure side impact sensor for a vehicle according to an exemplary embodiment of the present invention includes: a housing which has a connector; a middle cover which is connected with the housing, and has a flow path for transmitting air; an air pressure sensor which is positioned between the housing and the middle cover, and detects air pressure in a vehicle; and a cover which is connected with the middle cover, in which the middle cover has a locking hole, and the cover further includes a guide locking portion which is movable inward and outward from the cover, and coupled to the locking hole.

Abstract: Partial removal of organic planarizing layer (OPL) material forms a plug of OPL material within an aperture that protects underlying material or electronic device such as a deep trench capacitor during other manufacturing processes. The OPL plug thus can absorb any differences or non-uniformity in, for example, etch rates across the chip or wafer and preserve recess dimensions previously formed. Control of a lateral component of later removal of the OPL plug by etching also can increase tolerance of overlay error in forming connections and thus avoid loss in manufacturing yield.

Abstract: A thermoplastic resin composition includes a thermoplastic resin including a polycarbonate resin; a siloxane compound represented by Formula 1; and surface-modified hydrophobic silica: wherein R1 and R2 are the same or different and are each independently C1 to C5 alkyl; R3 and R4 are the same or different and are each independently C2 to C10 alkylene; A1 and A2 are the same or different and are each independently a glycidoxy group, an epoxy group, an amine group, a hydroxyl group, a hydrogen atom, a vinyl group, a (meth)acryloyl group, or an aryl group; and n is an integer from 2 to 80. The thermoplastic resin composition can exhibit excellent properties in terms of impact resistance, heat resistance, scratch resistance, surface gloss, mar resistance, and the like.

Abstract: A method of transferring graphene includes depositing graphene on a side of at least one metal substrate to provide a metal substrate-graphene layer, stacking a target substrate on a side of the metal substrate-graphene layer to provide a stacked structure in which a side of the target substrate faces the graphene layer, and exposing the stacked structure to an electrolysis bath to remove the metal substrate and transfer the graphene onto the side of the target substrate.

Abstract: Partial removal of organic planarizing layer (OPL) material forms a plug of OPL material within an aperture that protects underlying material or electronic device such as a deep trench capacitor during other manufacturing processes. The OPL plug thus can absorb any differences or non-uniformity in, for example, etch rates across the chip or wafer and preserve recess dimensions previously formed. control of a lateral component of later removal of the OPL plug by etching also can increase tolerance of overlay error in forming connections and thus avoid loss in manufacturing yield.

Abstract: Disclosed herein are carbon nanotubes and a method of manufacturing the same. The carbon nanotubes include at least one element selected from aluminum (Al), magnesium (Mg) and silicon (Si) and at least one metal selected from cobalt (Co), nickel (Ni), iron (Fe), manganese (Mn) and molybdenum (Mo), and have an intensity ratio (ID/IG) of about 1.10 or less as measured by Raman spectroscopy and a carbon purity of about 98% or higher. The carbon nanotubes prepared by the method can be controlled in terms of carbon purity and preparation yield while eliminating the need for post-refining treatment.

Abstract: A method of forming a semiconductor structure may include preparing a continuous active layer in a region of the substrate and forming a plurality of adjacent gates on the continuous active layer. A first raised epitaxial layer may be deposited on a recessed region of the continuous active layer between a first and a second one of the plurality of gates, whereby the first and second gates are adjacent. A second raised epitaxial layer may be deposited on another recessed region of the continuous active layer between the second and a third one of the plurality of gates, whereby the second and third gates are adjacent. Using a cut mask, a trench structure is etched into the second gate structure and a region underneath the second gate in the continuous active layer. The trench is filled with isolation material for electrically isolating the first and second raised epitaxial layers.

Abstract: A thermoplastic resin composition includes (A) thermoplastic resin in an amount of about 100 parts by weight, (B) flame retardant in an amount of about 1 to about 10 parts by weight, and (C) carbon nanotubes in an amount of about 0.005 to about 0.05 parts by weight. The thermoplastic resin composition of the present invention can have excellent anti-dripping properties.

Abstract: Partial removal of organic planarizing layer (OPL) material forms a plug of OPL material within an aperture that protects underlying material or electronic device such as a deep trench capacitor during other manufacturing processes. The OPL plug thus can absorb any differences or non-uniformity in, for example, etch rates across the chip or wafer and preserve recess dimensions previously formed. control of a lateral component of later removal of the OPL plug by etching also can increase tolerance of overlay error in forming connections and thus avoid loss in manufacturing yield.

Abstract: The present invention relates to a method for manufacturing carbon nanotubes comprising: a preparatory step of a supported catalyst; a temperature-raising step of inserting the supported catalyst into a reactor, injecting hydrocarbon gas and hydrogen gas at the same time, and raising the temperature of the reactor to between 900 to 1000° C. to synthesize carbon nanotubes; and a temperature-lowering step of lowering the temperature of the reactor to between a room temperature to 200° C., injecting only hydrogen gas, and synthesizing carbon nanotubes. The carbon nanotubes manufactured by the above method have high purity, and excellent selectivity for double wall carbon nanotubes can be achieved.