Abstract: The carbon nanotube dispersion includes: carbon nanotubes; polyarylene ether having a number-average molecular weight of about 5,000 g/mol to about 25,000 g/mol; and a solvent, wherein the polyarylene ether may be non-covalently bonded to surfaces of the carbon nanotubes via ?-? stacking interaction. The carbon nanotube dispersion is prepared by dispersing carbon nanotubes using inexpensive polyarylene ether.

Abstract: A thermoplastic resin composition includes (A) thermoplastic resin in an amount of about 100 parts by weight, (B) flame retardant in an amount of about 1 to about 10 parts by weight, and (C) carbon nanotubes in an amount of about 0.005 to about 0.05 parts by weight. The thermoplastic resin composition of the present invention can have excellent anti-dripping properties.

Abstract: A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also deposited on a second region of the continuous active layer such that the first raised epitaxial layer is in close proximity to the second raised epitaxial layer. A mask may be used to etch a trench structure into the continuous active layer at both the first and the second raised epitaxial layer, whereby the etched trench structure is filled with isolation material for electrically isolating the first raised epitaxial layer from the second raised epitaxial layer.

Abstract: A method of forming a semiconductor structure may include preparing a continuous active layer in a region of the substrate and forming a plurality of adjacent gates on the continuous active layer. A first raised epitaxial layer may be deposited on a recessed region of the continuous active layer between a first and a second one of the plurality of gates, whereby the first and second gates are adjacent. A second raised epitaxial layer may be deposited on another recessed region of the continuous active layer between the second and a third one of the plurality of gates, whereby the second and third gates are adjacent. Using a cut mask, a trench structure is etched into the second gate structure and a region underneath the second gate in the continuous active layer. The trench is filled with isolation material for electrically isolating the first and second raised epitaxial layers.

Abstract: A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also deposited on a second region of the continuous active layer such that the first raised epitaxial layer is in close proximity to the second raised epitaxial layer. A mask may be used to etch a trench structure into the continuous active layer at both the first and the second raised epitaxial layer, whereby the etched trench structure is filled with isolation material for electrically isolating the first raised epitaxial layer from the second raised epitaxial layer.

Abstract: A method of transferring graphene includes depositing graphene on a side of at least one metal substrate to provide a metal substrate-graphene layer, stacking a target substrate on a side of the metal substrate-graphene layer to provide a stacked structure in which a side of the target substrate faces the graphene layer, and exposing the stacked structure to an electrolysis bath to remove the metal substrate and transfer the graphene onto the side of the target substrate.

Abstract: Disclosed herein are an electrically conductive thermoplastic resin composition and a plastic article. The electrically conductive thermoplastic resin composition comprises about 80 to about 99% by weight of a thermoplastic resin, about 0.1 to about 10% by weight of carbon nanotubes and about 0.1 to about 10% by weight of an organo nanoclay.

Abstract: A supported catalyst with a solid sphere structure of the present invention includes an oxide supporting body and a metal such as Ni, Co, Fe, or a combination thereof distributed on the surface and inside of the supporting body. The supported catalyst with a solid sphere structure can maintain a spherical shape during heat treatment and can be used with a floating bed reactor due to the solid sphere structure thereof.

Abstract: A semiconductor structure, a fabrication method, and a design structure for a FinFet. The FinFet includes a dielectric layer, a central semiconductor fin region on the dielectric layer, a first semiconductor seed region on the dielectric layer, and a first strain creating fin region. The first semiconductor seed region is sandwiched between the first strain creating fin region and the dielectric layer. The first semiconductor seed region includes a first semiconductor material. The first strain creating fin region includes the first semiconductor material and a second semiconductor material different than the first semiconductor material. A first atom percent of the first semiconductor material in the first semiconductor seed region is different than a second atom percent of the first semiconductor material in the first strain creating fin region.

Abstract: The present invention provides a supported catalyst for synthesizing carbon nanotubes. The supported catalyst includes a metal catalyst supported on a supporting body and a water-soluble polymer, and has an average diameter of about 30 to about 100 ?m.

Abstract: The present invention provides a supported catalyst for synthesizing carbon nanotubes. The supported catalyst includes a metal catalyst supported on a supporting body, and the supported catalyst has a surface area of about 15 to about 100 m2/g. The supported catalyst for synthesizing carbon nanotubes according to the present invention can lower production costs by increasing surface area of a catalytic metal to thereby allow production of a large amount of carbon nanotubes using a small amount of the catalyst.

Abstract: A deep trench structure process for forming a deep trench in a silicon on insulator (SOI) substrate. The SOI substrate has a bulk silicon layer, a buried oxide (BOX) layer and an SOI layer. In the process, the trench fill is recessed only to a level within the SOI layer so as to avoid lateral etching of the BOX layer. The buried strap is then formed followed by the STI oxide.

Abstract: The present invention provides a metal nano catalyst, a method for preparing the same and a method for controlling the growth types of carbon nanotubes using the same. The metal nano catalyst can be prepared by burning an aqueous metal catalyst derivative comprising Co, Fe, Ni or a combination thereof in the presence of a supporting body precursor.

Abstract: A deep trench structure process for forming a deep trench in a silicon on insulator (SOI) substrate. The SOI substrate has a bulk silicon layer, a buried oxide (BOX) layer and an SOI layer. In the process, the trench fill is recessed only to a level within the SOI layer so as to avoid lateral etching of the BOX layer. The buried strap is then formed followed by the STI oxide.

Abstract: A passenger discriminating apparatus according to the present invention includes a plurality of load sensors for measuring a load of a passenger, which is applied to a passenger seat disposed within a vehicle, and a pair of dummy sensors configured to support the load of the passenger seat and not having a load sensing function. The type of the passenger is discriminated by comparing a sum of values in which the load values measured by the plurality of load sensors, respectively, are multiplied by a load weight of the load sensors and a reference value. Accordingly, the passenger discriminating apparatus can save the prime cost, reduce its weight, and secure an equivalent or more performance.

Abstract: A supported catalyst with a solid sphere structure of the present invention includes an oxide supporting body and a metal such as Ni, Co, Fe, or a combination thereof distributed on the surface and inside of the supporting body. The supported catalyst with a solid sphere structure can maintain a spherical shape during heat treatment and can be used with a floating bed reactor due to the solid sphere structure thereof.

Abstract: A method for classifying passengers comprises the steps of providing a plurality of load sensors disposed in a passenger seat of an automobile for measuring a load applied to the passenger seat; obtaining a sum by summing respective values obtained by multiplying respective load values measured from the plurality of load sensors by weighted load values of the respective load sensors; and comparing the sum with a reference value to classify a passenger on the passenger seat.

Abstract: A semiconductor structure, a fabrication method, and a design structure for a FinFet. The FinFet includes a dielectric layer, a central semiconductor fin region on the dielectric layer, a first semiconductor seed region on the dielectric layer, and a first strain creating fin region. The first semiconductor seed region is sandwiched between the first strain creating fin region and the dielectric layer. The first semiconductor seed region includes a first semiconductor material. The first strain creating fin region includes the first semiconductor material and a second semiconductor material different than the first semiconductor material. A first atom percent of the first semiconductor material in the first semiconductor seed region is different than a second atom percent of the first semiconductor material in the first strain creating fin region.

Abstract: Disclosed herein are an electrically conductive thermoplastic resin composition and a plastic article. The electrically conductive thermoplastic resin composition comprises about 80 to about 99% by weight of a thermoplastic resin, about 0.1 to about 10% by weight of carbon nanotubes and about 0.1 to about 10% by weight of an organo nanoclay.

Abstract: A passenger differentiating apparatus with an independent frame structure includes a passenger seat disposed to be movable in a back-and-forth direction within a car by a user, a pair of guide rails disposed below the passenger seat and configured to guide the movement of the passenger seat, a pair of load sensors disposed to be spaced apart from each other in a back-and-forth direction on one of the pair of guide rails to sense a load of a passenger sitting on the passenger seat, and an overload prevention unit disposed on the guide rails and configured to prevent damage to the pair of load sensors.