Patents by Inventor Byoung Gon Yu

Byoung Gon Yu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20110223716
    Abstract: Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
    Type: Application
    Filed: May 18, 2011
    Publication date: September 15, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Seung Yun LEE, Young Sam PARK, Sung Min YOON, Soon Won JUNG, Byoung Gon YU
  • Patent number: 7989793
    Abstract: Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.
    Type: Grant
    Filed: December 2, 2008
    Date of Patent: August 2, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Seung Yun Lee, Young Sam Park, Sung Min Yoon, Soon Won Jung, Byoung Gon Yu
  • Patent number: 7977674
    Abstract: A phase change memory device and a method of fabricating the same are provided. A phase change material layer of the phase change memory device is formed of germanium (Ge)-antimony (Sb)-Tellurium (Te)-based Ge2Sb2+xTe5 (0.12?x?0.32), so that the crystalline state is determined as a stable single phase, not a mixed phase of a metastable phase and a stable phase, in phase transition between crystalline and amorphous states of a phase change material, and the phase transition according to increasing temperature directly transitions to the single stable phase from the amorphous state. As a result, set operation stability and distribution characteristics of set state resistances of the phase change memory device can be significantly enhanced, and an amorphous resistance can be maintained for a long time at a high temperature, i.e., around crystallization temperature, and thus reset operation stability and rewrite operation stability of the phase change memory device can be significantly enhanced.
    Type: Grant
    Filed: September 29, 2008
    Date of Patent: July 12, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung Min Yoon, Byoung Gon Yu, Seung Yun Lee, Young Sam Park, Kyu Jeong Choi, Nam Yeal Lee
  • Publication number: 20110159669
    Abstract: Provided is a method of depositing an amorphous silicon thin film by chemical vapor deposition (CVD) to prevent bubble defect occurring when an amorphous silicon thin film is deposited on a substrate contaminated by air exposure. The deposition method includes cleaning a surface of the contaminated substrate with a reaction gas activated by plasma and depositing an amorphous silicon thin film on the cleaned substrate. Here, a vacuum state is maintained from the substrate cleaning step to the thin film deposition step in order to prevent contamination of the surface of the cleaned substrate by re-exposure to air.
    Type: Application
    Filed: September 18, 2009
    Publication date: June 30, 2011
    Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTIT
    Inventors: Woo Seok Yang, Seong mok Cho, Ho Jun Ryu, Sang Hoon Cheon, Byoung Gon Yu, Chang Auck Choi
  • Patent number: 7952086
    Abstract: Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption.
    Type: Grant
    Filed: May 16, 2008
    Date of Patent: May 31, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Byoung Gon Yu, Sung Min Yoon, Se Young Choi, Tae Jin Park
  • Patent number: 7920413
    Abstract: Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time.
    Type: Grant
    Filed: February 29, 2008
    Date of Patent: April 5, 2011
    Assignees: Electronics & Telecommunications Research Institute, Cungbuk Nat'l Univ. Industry Academic Cooperation Foundation
    Inventors: Byoung-Gon Yu, Byung-Do Yang, Seung-Yun Lee, Sung-Min Yoon, Young Sam Park, Nam Yeal Lee
  • Patent number: 7911227
    Abstract: Provided is a programmable logic block of a field-programmable gate array (FPGA). The programmable logic block includes a pull-up access transistor connected to a power source, an up-phase-change memory device connected to the pull-up access transistor, a down-phase-change memory device connected to the up-phase-change memory device, an output terminal between the up-phase-change memory device and the down-phase-change memory device, and a pull-down access transistor connected to the down-phase-change memory device and a ground. The resistance values of the up-phase-change memory device and the down-phase-change memory device are individually programmed.
    Type: Grant
    Filed: December 8, 2009
    Date of Patent: March 22, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Byoung Gon Yu, Yong-Joo Kim, Sung Min Yoon, Seung-Yun Lee, Young Sam Park, Soonwon Jung
  • Publication number: 20110065246
    Abstract: An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
    Type: Application
    Filed: November 9, 2010
    Publication date: March 17, 2011
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Seung-Yun LEE, Sang ouk RYU, Sung Min YOON, Young Sam PARK, Kyu-Jeong CHOI, Nam-Yeal LEE, Byoung-Gon YU
  • Patent number: 7884347
    Abstract: A phase-change memory device in which a phase-change material layer has a multilayered structure with different compositions and a method of fabricating the same are provided. The phase-change memory device includes a first electrode layer formed on a substrate, a heater electrode layer formed on the first electrode layer, an insulating layer formed on the heater electrode layer and having a pore partially exposing the heater electrode layer, a phase-change material layer formed to fill the pore and partially contacting the heater electrode layer, and a second electrode layer formed on the phase-change material layer.
    Type: Grant
    Filed: April 16, 2009
    Date of Patent: February 8, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Sung Min Yoon, Byoung Gon Yu, Soon Won Jung, Seung Yun Lee, Young Sam Park, Joon Suk Lee
  • Patent number: 7884328
    Abstract: Provided are a microbolometer having a cantilever structure and a method of manufacturing the same, and more particularly, a microbolometer having a three-dimensional cantilever structure, which is improved from a conventional two-dimensional cantilever structure, and a method of manufacturing the same. The method includes providing a substrate including a read-out integrated circuit and a reflective layer for forming an absorption structure, forming a sacrificial layer on the substrate, forming a cantilever structure having an uneven cross-section in the sacrificial layer, forming a sensor part isolated from the substrate by the cantilever structure, and removing the sacrificial layer.
    Type: Grant
    Filed: July 29, 2008
    Date of Patent: February 8, 2011
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Seong Mok Cho, Ho Jun Ryu, Woo Seok Yang, Sang Hoon Cheon, Byoung Gon Yu, Chang Auck Choi
  • Patent number: 7855421
    Abstract: An embedded memory required for a high performance, multifunction SOC, and a method of fabricating the same are provided. The memory includes a bipolar transistor, a phase-change memory device and a MOS transistor, adjacent and electrically connected, on a substrate. The bipolar transistor includes a base composed of SiGe disposed on a collector. The phase-change memory device has a phase-change material layer which is changed from an amorphous state to a crystalline state by a current, and a heating layer composed of SiGe that contacts the lower surface of the phase-change material layer.
    Type: Grant
    Filed: December 4, 2006
    Date of Patent: December 21, 2010
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Seung-Yun Lee, Sangouk Ryu, Sung Min Yoon, Young Sam Park, Kyu-Jeong Choi, Nam-Yeal Lee, Byoung-Gon Yu
  • Publication number: 20100258780
    Abstract: Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
    Type: Application
    Filed: June 23, 2010
    Publication date: October 14, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Seung-Yun Lee, Young Sam Park, Sung Min Yoon, Kyu-Jeong Choi, Nam-Yeal Lee, Byoung-Gon Yu
  • Publication number: 20100243994
    Abstract: Provided are a transparent nonvolatile memory thin film transistor (TFT) and a method of manufacturing the same. The memory TFT includes source and drain electrodes disposed on a transparent substrate. A transparent semiconductor thin layer is disposed on the source and drain electrodes and the transparent substrate interposed between the source and drain electrodes. An organic ferroelectric thin layer is disposed on the transparent semiconductor thin layer. A gate electrode is disposed on the organic ferroelectric thin layer in alignment with the transparent semiconductor thin layer. Thus, the transparent nonvolatile memory TFT employs the organic ferroelectric thin layer, the oxide semiconductor thin layer, and auxiliary insulating layers disposed above and below the organic ferroelectric thin layer, thereby enabling low-cost manufacture of a transparent nonvolatile memory device capable of a low-temperature process.
    Type: Application
    Filed: September 9, 2009
    Publication date: September 30, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sung Min Yoon, Shin Hyuk Yang, Soon Woon Jung, Seung Youl Kang, Doo Hee Cho, Chun Won Byun, Chi Sun Hwang, Byoung Gon Yu, Kyoung Ik Cho
  • Patent number: 7767994
    Abstract: Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.
    Type: Grant
    Filed: December 5, 2007
    Date of Patent: August 3, 2010
    Assignee: Electronics and Telecommunications Research Institute
    Inventors: Seung-Yun Lee, Young Sam Park, Sung Min Yoon, Kyu-Jeong Choi, Nam-Yeal Lee, Byoung-Gon Yu
  • Publication number: 20100155601
    Abstract: An infrared sensor and a method of fabricating the same are provided. The sensor includes a substrate including a reflection layer and a plurality of pad electrodes, an interdigitated sensing electrode connected to the pad electrode and formed to be spaced apart from the reflection layer by a predetermined distance and a sensing layer formed on the sensing electrode and having an opening exposing a portion in which an interdigitated region of the sensing electrode connected to one pad region is separated from the sensing electrode connected to the other pad electrode. Therefore, the sensor has an electrode in a very simple constitution, and a sensing layer divided into rectangular blocks, so that current that non-uniformly flows into the electrode can be removed. Accordingly, the sensor in which current of the sensing layer can be uniformly flown, and noise is lowered can be implemented.
    Type: Application
    Filed: July 29, 2009
    Publication date: June 24, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Seong Mok Cho, Ho Jun Ryu, Woo Seok Yang, Sang Hoon Cheon, Byoung Gon Yu, Chang Auck Choi
  • Publication number: 20100147070
    Abstract: Provided are a humidity sensor and a method of manufacturing the same. The humidity sensor has high sensitivity, quick response time, improved temperature characteristics, low hysteresis and excellent durability. Moreover, for the humidity sensor, a humidity sensitive layer may be formed of various materials. The humidity sensor may be manufactured in a small size on a large scale.
    Type: Application
    Filed: November 12, 2009
    Publication date: June 17, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Chi Hoon JUN, Sang Choon Ko, Chang Auck Choi, Byoung Gon Yu
  • Publication number: 20100148067
    Abstract: Provided are a bolometer structure, an infrared detection pixel employing the bolometer structure, and a method of fabricating the infrared detection pixel.
    Type: Application
    Filed: July 22, 2009
    Publication date: June 17, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Sang Hoon CHEON, Ho Jun Ryu, Woo Seok Yang, Seong Mok Cho, Byoung Gon Yu, Chang Auck Choi
  • Publication number: 20100148821
    Abstract: Provided is a programmable logic block of a field-programmable gate array (FPGA). The programmable logic block includes a pull-up access transistor connected to a power source, an up-phase-change memory device connected to the pull-up access transistor, a down-phase-change memory device connected to the up-phase-change memory device, an output terminal between the up-phase-change memory device and the down-phase-change memory device, and a pull-down access transistor connected to the down-phase-change memory device and a ground. The resistance values of the up-phase-change memory device and the down-phase-change memory device are individually programmed.
    Type: Application
    Filed: December 8, 2009
    Publication date: June 17, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Byoung Gon YU, Yong-Joo Kim, Sung Min Yoon, Seung-Yun Lee, Young Sam Park, Soonwon Jung
  • Publication number: 20100148141
    Abstract: Provided is a non-volatile programmable device including a first terminal, a first threshold switching layer connected to part of the first terminal, a phase change layer connected to the first threshold switching layer, a second threshold switching layer connected to the phase change layer, a second terminal connected to the second threshold switching layer, and third and fourth terminals respectively connected to a side portion of the phase change layer and the other side portion opposite to the side portion of the phase change layer.
    Type: Application
    Filed: June 25, 2009
    Publication date: June 17, 2010
    Applicant: Electronics and Telecommunications Research Institute
    Inventors: Seung Yun Lee, Young Sam Park, Sung Min Yoon, Soonwon Jung, Sang Hoon Cheon, Byoung Gon Yu
  • Publication number: 20100132467
    Abstract: Provided is a high-sensitivity MEMS-type z-axis vibration sensor, which may sense z-axis vibration by differentially shifting an electric capacitance between a doped upper silicon layer and an upper electrode from positive to negative or vice versa when center mass of a doped polysilicon layer is moved due to z-axis vibration. Particularly, since a part of the doped upper silicon layer is additionally connected to the center mass of the doped polysilicon layer, and thus an error made by the center mass of the doped polysilicon layer is minimized, it may sensitively respond to weak vibration of low frequency such as seismic waves. Accordingly, since the high-sensitivity MEMS-type z-axis vibration sensor sensitively responds to a small amount of vibration in a low frequency band, it can be applied to a seismograph sensing seismic waves of low frequency which have a very small amount of vibration and a low vibration speed.
    Type: Application
    Filed: July 24, 2009
    Publication date: June 3, 2010
    Applicant: Electronics and Telecomunications Research Institute
    Inventors: Sang Choon Ko, Chi Hoon Jun, Byoung Gon Yu, Chang Auck Choi