Abstract: A dual sliding-type portable communication apparatus having a housing configured to slide in a twofold manner is provided. The apparatus includes a main housing, a sliding housing which is configured to slide on the main housing to expose/hide the main housing, a slider, and a dual sliding guide slidably coupled to the slider to enable the sliding housing to slide towards or away from the main housing in the longitudinal or perpendicular directions.

Abstract: A power management system for semiconductor manufacturing prevents malfunctions of loading devices when transient power interruption occurs by maintaining power to the facilities for a period of time after the transient power interruption occurs. The system includes an emergency cutoff circuit, a first power controller, and a second power controller. The emergency cutoff circuit prevents trips in a power relay for one second at the time of transient power interruption. The first power controller discharges a DC voltage for a predetermined time period when AC power is not supplied through a power supply line thereto due to transient power interruption. The second power controller receives the DC voltage provided from the first power controller and discharges the DC voltage during a transient power interruption.

Abstract: A temperature sensor device for use in a clean room has a housing, a covering tube extending from the housing, a lead wire protecting tube extending from the housing within the covering tube, and a generally cylindrical temperature sensor also disposed within the covering tube. A fixing end of the temperature sensor is detachably coupled to a distal end of the lead wire protecting tube. A plurality of lead wires protrude from the fixing end and extend through the lead wire protecting tube and into the housing. The temperature sensor includes a temperature sensor element at a free end thereof. The covering tube has at least one hole by which the temperature sensor element is exposed to the atmosphere. Accordingly, the temperature sensor is highly responsive to changes in temperature, and can be repaired, maintained or replaced with ease.

Abstract: A power management system for semiconductor manufacturing prevents malfunctions of loading devices when transient power interruption occurs by maintaining power to the facilities for a period of time after the transient power interruption occurs. The system includes an emergency cutoff circuit, a first power controller, and a second power controller. The emergency cutoff circuit prevents trips in a power relay for one second at the time of transient power interruption. The first power controller discharges a DC voltage for a predetermined time period when AC power is not supplied through a power supply line thereto due to transient power interruption. The second power controller receives the DC voltage provided from the first power controller and discharges the DC voltage during a transient power interruption.

Abstract: A temperature sensor device for use in a clean room has a housing, a covering tube extending from the housing, a lead wire protecting tube extending from the housing within the covering tube, and a generally cylindrical temperature sensor also disposed within the covering tube. A fixing end of the temperature sensor is detachably coupled to a distal end of the lead wire protecting tube. A plurality of lead wires protrude from the fixing end and extend through the lead wire protecting tube and into the housing. The temperature sensor includes a temperature sensor element at a free end thereof. The covering tube has at least one hole by which the temperature sensor element is exposed to the atmosphere. Accordingly, the temperature sensor is highly responsive to changes in temperature, and can be repaired, maintained or replaced with ease.

Abstract: A gate electrode having an agglomeration preventing layer formed on a metal silicide layer is disclosed. The agglomeration preventing layer prevents the metal silicide layer from agglomerating. The gate electrode in accordance with an embodiment of the present invention includes a gate dielectric film formed on a semiconductor substrate, an impurity-doped polysilicon layer formed on the gate dielectric film, a metal silicide layer formed on the polysilicon layer, a titanium nitride (TiN) barrier layer formed between the polysilicon layer and the metal silicide layer, and the agglomeration prevention layer formed on the metal silicide layer. The agglomeration preventing layer can be a TiN layer or TiSiN layer. In addition, a method for forming the gate electrode is also disclosed.

Abstract: A gate electrode having an agglomeration preventing layer formed on a metal silicide layer is disclosed. The agglomeration preventing layer prevents the metal silicide layer from agglomerating. The gate electrode in accordance with an embodiment of the present invention includes a gate dielectric film formed on a semiconductor substrate, an impurity-doped polysilicon layer formed on the gate dielectric film, a metal silicide layer formed on the polysilicon layer, a titanium nitride (TiN) barrier layer formed between the polysilicon layer and the metal silicide layer, and the agglomeration prevention layer formed on the metal silicide layer. The agglomeration preventing layer can be a TiN layer or TiSiN layer. In addition, a method for forming the gate electrode is also disclosed.

Abstract: A method of fabricating a gate of a semiconductor device, by which damage to a gate oxide layer is repaired, is provided. In an aspect of the method, a gate oxide layer is formed on a semiconductor substrate. A conductive layer containing silicon is formed on the gate oxide layer. A stacked structure with a polycrystalline silicon layer and a dichlorosilane-family tungsten silicide layer can be used as the conductive layer. A gate is formed by patterning the conductive layer. A silicon source layer which covers the sidewall of the gate is formed by selective epitaxial growth of silicon. The silicon source layer is grown to a thickness of about 200 Å or less. The silicon source layer is thermally treated at an oxidation atmosphere, thus repairing damage to the gate oxide layer.

Abstract: A resonator for a rotary compressor is provided to prevent generation of impact exciting force and pulsation sound occurred due to pressure pulsation and reduce a noise of a low frequency band generated in the compressor by forming a curved portion at a narrow unit of the resonator which is a pressure pulsation inflow path and controlling the ratio of a diameter to a length of each of the narrow unit and a resonance unit, for thereby smoothing the inflow of the pressure pulsation generated from a pressure chamber. To achieve such a resonator, in a resonator for a rotary compressor, which consists of a narrow unit serving as an inflow path of pressure pulsation which is generated from a compressor and communicating with an exhaust outlet and a resonance unit for reducing a noise by attenuating the pressure pulsation element flowed through the narrow unit, the improved resonator for the rotary compressor according to the present invention includes a curved portion formed at an end portion of the narrow unit.

Abstract: An ink jet print head, which sprays ink continuously by fixing an ink spray unit on which thin film layers each having a different residual stress are deposited so that both ends thereof are fixed on an ink chamber barrier layer located at the lower part of a nozzle plate, applying an electrostatic force to the thin film layers and then applying an impact force generated by the extension of the absolute lengths of the thin film layers caused by the difference of the residual stresses of the thin film layers.