Abstract: A method for authentication, a user terminal and an authentication server for executing the same are disclosed. An authentication server according to an embodiment disclosed includes a number receiver that receives a number of a user terminal from a callee who has received a call originated from the user terminal, a device authenticator that determines whether to generate an authentication key based on the number of the user terminal received from the callee and a caller number received from the user terminal, and generates the authentication key when it is determined to generate the authentication key, and an authentication key transmitter that transmits the authentication key to the user terminal.

Abstract: The present disclosure relates to a novel cell-penetrating multifunctional peptide, a composition including the same.

Abstract: A multilayer electronic component includes a body including a dielectric layer and internal electrodes stacked in a first direction with the dielectric layer interposed therebetween and external electrodes including a first electrode layer connected to the internal electrodes and including Ni, and a second electrode layer disposed on the first electrode layer and including an Ni—Cu alloy. A Cu content of the second electrode layer is 70 mol to 90 mol compared to 100 mol of the total content of Ni and Cu of the second electrode layer.

Abstract: Disclosed are a composition for forming a hole transport layer of a light-transmitting solar cell, a method for manufacturing the light-transmitting solar cell, and a light-transmitting solar cell manufactured thereby. The light-transmitting solar cell manufactured with the composition for forming the hole transport layer may have excellent durability and therefore, not only deposit a transparent electrode, which is an upper electrode, without damage even without buffer layer, thereby reducing the process cost but also deposit the transparent electrode without damage by using a general sputter equipment even without using an expensive special sputter equipment.

Abstract: The present invention relates to a coating resin composition comprising a siloxane resin chemically bonded by compounds including an alkoxy silane containing epoxy or acrylic in the chemical structure; a dialkoxysilane of a silane D structure; or a trialkoxy silane of a silane T structure, and to a coating film comprising a cured article of the resin composition as a coating layer.

Abstract: The present specification relates to a viewing angle compensation film, a polarizing plate including the same, and a display device including the same, and the viewing angle compensation film includes: a pattern layer; and a low refractive layer, in which a difference in refractive index between the pattern layer and the low refractive layer is 0.02 to 0.

Abstract: An authentication server according to an embodiment disclosed includes a number receiver that receives a number of a user terminal from a callee who has received a call originated from the user terminal, an device authenticator that determines whether to generate an authentication key based on the number of the user terminal received from the callee and a caller number received from the user terminal, and generates the authentication key when it is determined to generate the authentication key, and an authentication key transmitter that transmits the authentication key to the user terminal.

Abstract: A modeling method for designing a flow field of a fuel cell including a membrane electrode assembly including a catalyst layer and an electrolyte membrane, a gas diffusion layer, a flow field, and a bipolar plate includes modeling using a numerical model derived from a governing equation including a mass conservation equation of species, a fluid momentum in a porous media, and a modified Butler-Volmer's equation and outputting an oxygen diffusion characteristic in a catalyst layer from the modeling result.

Abstract: An electronic device is disclosed. An electronic device comprises: a first memory in which an operating system and an application program executed on the operating system are stored; a second memory; a processor for loading at least some codes among codes corresponding to an application program from the first memory to the second memory, and when access information of the codes loaded in the second memory is received from a kernel of an operating system, accessing an area in which the loaded codes are stored, on the basis of the received information and executing the application program; and a snoop for monitoring access to an area in which a preset code, the access of which has been limited, from among codes loaded in the second memory is stored.

Abstract: Provided is a dispatching method in a factory based on reinforcement learning. The dispatching method in a factory based on reinforcement learning may comprise: constructing a Markov decision process (MDP) for dispatching actions of a dispatcher in the factory and resulting rewards and states of the factory; performing learning by applying reinforcement learning (RL) to the constructed MDP; and as a result of said RL, selecting a job that maximizes a weighted sum of a plurality of scored dispatching rules.

Abstract: Provided is a method for resource planning in a factory based on simulations. The method for resource planning may comprise: modeling factory resources as capacity buckets; allocating a plurality of demands to the modeled capacity buckets; and, constructing factory resource planning by performing capacity bucket simulations (CBSs) based on the factory resources to which the plurality of demands are allocated.

Abstract: Provided is a dispatching method in a factory based on reinforcement learning. The dispatching method in a factory based on reinforcement learning may comprise: constructing a Markov decision process (MDP) for dispatching actions of a dispatcher in the factory and resulting rewards and states of the factory; performing learning by applying reinforcement learning (RL) to the constructed MDP; and as a result of said RL, selecting a job that maximizes a weighted sum of a plurality of scored dispatching rules.

Abstract: A semiconductor device includes an element layer, a plurality of first interconnect lines on the element layer, a first insulation layer including carbon having a uniform concentration distribution between the first interconnect lines, a plurality of second interconnect lines spaced from the first interconnect lines, and a second insulation layer between the second interconnect lines. An air spacing is included between the second interconnect lines.

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

Abstract: A semiconductor device includes a first insulating interlayer on a first region of a substrate and a second insulating interlayer on a second region of the substrate, a plurality of first wiring structures on the first insulating interlayer, the first wiring structures being spaced apart from each other, a plurality of second wiring structures filling a plurality of trenches on the second insulating interlayer, respectively, an insulation capping structure selectively on a surface of the first insulating interlayer between the first wiring structures and on a sidewall and an upper surface of each of the first wiring structures, the insulation capping structure including an insulating material, a third insulating interlayer on the first and second wiring structures, and an air gap among the first wiring structures under the third insulating interlayer.

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes a first interlayer insulating layer including a first trench, on a substrate a first liner layer formed along a side wall and a bottom surface of the first trench and including noble metal, the noble metal belonging to one of a fifth period and a sixth period of a periodic chart that follows numbering of International Union of Pure and Applied Chemistry (IUPAC) and belonging to one of eighth to tenth groups of the periodic chart, and a first metal wire filling the first trench on the first liner layer, a top surface of the first metal wire having a convex shape toward a bottom surface of the first trench.

Abstract: Semiconductor devices may include a diffusion prevention insulation pattern, a plurality of conductive patterns, a barrier layer, and an insulating interlayer. The diffusion prevention insulation pattern may be formed on a substrate, and may include a plurality of protrusions protruding upwardly therefrom. Each of the conductive patterns may be formed on each of the protrusions of the diffusion prevention insulation pattern, and may have a sidewall inclined by an angle in a range of about 80 degrees to about 135 degrees to a top surface of the substrate. The barrier layer may cover a top surface and the sidewall of each if the conductive patterns. The insulating interlayer may be formed on the diffusion prevention insulation pattern and the barrier layer, and may have an air gap between neighboring ones of the conductive patterns.

Abstract: A semiconductor device includes a first interlayer dielectric film on a substrate, first and second wires respectively extending in a first direction within the first interlayer dielectric film, the first and second wires being adjacent to each other in a second direction different from the first direction, a hard mask pattern on the first interlayer dielectric film, the hard mask pattern including an opening, and an air gap within the first interlayer dielectric film, the air gap including a first portion overlapping vertically with the opening and a second portion not overlapping with the opening in the first direction.

Abstract: A semiconductor device and a method of fabricating the same are provided. The semiconductor device includes an interlayer insulating film on a substrate, the interlayer insulating film including an opening, a barrier conductive film extending along a sidewall of the opening and a bottom surface exposed by the opening, a first film disposed on the barrier conductive film and in the opening, and the first film including cobalt, and a conductive liner on the barrier conductive film, the conductive liner extending along a portion of a side all of the opening and including a metal other than cobalt.