Abstract: A chemical supply structure includes a bar-shaped body having a plurality of chemical reservoirs in which a plurality of chemicals is individually stored such that the body partially crosses an underlying substrate, a bar-shaped nozzle protruded from a bottom surface of the body and injecting injection chemicals onto the substrate, a plurality of the chemicals being mixed into the injection chemicals, and a hydrophobic unit arranged on the bottom surface of the body and on a side surface of the nozzle such that a mixed solution mixed with the injection chemicals is prevented from adhering to the bottom surface and the side surface by controlling a contact angle of the mixed solution with respect to the bottom surface and the side surface.

Abstract: A storage device includes a nonvolatile memory device, and a controller that manages a data encryption key (DEK). The DEK is used to encrypt data to be written in a storage space of the nonvolatile memory device by a first user and to decrypt data read from the storage space. The controller grants a second user authority to access the storage space by encrypting the DEK based on a Diffie-Hellman (DH) algorithm, grants a second user authority to access the encrypted DEK, and decrypts the encrypted DEK based on the DH algorithm.

Abstract: A support device for a substrate and a substrate cleaning apparatus, the support device including a support on which the substrate is loadable; a rotor that rotates the support; and an oscillator that oscillates the substrate in a direction perpendicular to a surface of the substrate, wherein the substrate oscillates according to a natural frequency of the substrate or a natural frequency of particles on the substrate.

Abstract: A storage device includes a nonvolatile memory device, and a controller that manages a data encryption key (DEK). The DEK is used to encrypt data to be written in a storage space of the nonvolatile memory device by a first user and to decrypt data read from the storage space. The controller grants a second user authority to access the storage space by encrypting the DEK based on a Diffie-Hellman (DH) algorithm, grants a second user authority to access the encrypted DEK, and decrypts the encrypted DEK based on the DH algorithm.

Abstract: A chemical supply structure includes a bar-shaped body having a plurality of chemical reservoirs in which a plurality of chemicals is individually stored such that the body partially crosses an underlying substrate, a bar-shaped nozzle protruded from a bottom surface of the body and injecting injection chemicals onto the substrate, a plurality of the chemicals being mixed into the injection chemicals, and a hydrophobic unit arranged on the bottom surface of the body and on a side surface of the nozzle such that a mixed solution mixed with the injection chemicals is prevented from adhering to the bottom surface and the side surface by controlling a contact angle of the mixed solution with respect to the bottom surface and the side surface.

Abstract: A mask blank includes: a light transmitting substrate; a first layer disposed on the light transmitting substrate, and including a chromium compound that contains chromium and at least one element selected from oxygen, nitrogen, and carbon; and a second layer disposed on the first layer as an outermost layer from among the first and second layers, and including a silicon compound that contains silicon and at least one element selected from oxygen, nitrogen, and carbon, an alloy of a transition metal and silicon, or a transition metal and silicon compound that contains a transition metal, silicon, and at least one element selected from oxygen, nitrogen, and carbon. The thickness of the first layer is 45 nm or less, and the thickness of the second layer is 5 nm or greater. An optical density of a stack composed of the first layer and the second layer is 3 or greater.

Abstract: A pellicle includes a pellicle frame, a pellicle membrane, and an attaching element, a first surface of the attaching element having exposed pores.

Abstract: Disclosed is a method of operating a memory system which executes a plurality of commands including a write command and a trim command. The memory system includes a memory device, which includes a plurality of blocks. The method further includes performing garbage collection for generating a free block, calculating a workload level in performing the garbage collection, and changing a command schedule based on the workload level.

Abstract: A support device for a substrate and a substrate cleaning apparatus, the support device including a support on which the substrate is loadable; a rotor that rotates the support; and an oscillator that oscillates the substrate in a direction perpendicular to a surface of the substrate, wherein the substrate oscillates according to a natural frequency of the substrate or a natural frequency of particles on the substrate.

Abstract: Provided is a method of manufacturing a semiconductor device. The method of manufacturing a semiconductor device includes forming a target etching layer on a substrate, patterning the target etching layer to form a pattern layer including a pattern portion having a first height and a first width and a recess portion having a second width, providing a first gas and a second gas on the pattern layer, and performing a reaction process including reacting the first and second gases with a surface of the pattern portion by irradiating a laser beam on the pattern layer. The performing the reaction process includes removing a portion of sidewalls of the pattern portion so that the pattern portion has a third width that is smaller than the first width.

Abstract: Disclosed is a method of operating a memory system which executes a plurality of commands including a write command and a trim command. The memory system includes a memory device, which includes a plurality of blocks. The method further includes performing garbage collection for generating a free block, calculating a workload level in performing the garbage collection, and changing a command schedule based on the workload level.

Abstract: A semiconductor device includes a memory cell array including a first memory region and a second memory region; a plurality of register sets for storing a plurality of parameter sets; and a control logic circuit configured to, activate a first register set among the plurality of register sets in response to a selection signal, and perform an access operation on the first memory region using a parameter set stored in an activated register set from among the plurality of register sets.

Abstract: Disclosed is a method of operating a memory system which executes a plurality of commands including a write command and a trim command. The memory system includes a memory device, which includes a plurality of blocks. The method further includes performing garbage collection for generating a free block, calculating a workload level in performing the garbage collection, and changing a command schedule based on the workload level.

Abstract: A pellicle includes a pellicle membrane, which includes a porous thin film. The porous thin film includes a plurality of nanowires, which are arranged across one another to form a net structure. A photomask assembly includes the pellicle and a photomask, wherein the pellicle is fixed to a surface of the photomask.

Abstract: A method of manufacturing a pellicle assembly, the method including attaching a carbon-containing thin film onto a transfer membrane in a wet atmosphere; attaching the carbon-containing thin film to a pellicle frame in a dry atmosphere while the carbon-containing thin film is attached onto the transfer membrane; and separating the transfer membrane from the carbon-containing thin film while the carbon-containing thin film is attached to the pellicle frame.

Abstract: A photomask includes a transparent substrate, a mask pattern formed on the substrate, and a protective layer pattern covering side walls of the mask pattern, wherein a top of the protective layer pattern is exposed.

Abstract: A pellicle includes a pellicle frame, a pellicle membrane, and an attaching element, a first surface of the attaching element having exposed pores.

Abstract: A method of inspecting a surface includes loading an inspection object on a stage of a multibeam inspection device configured to generate a beam array, and scanning a plurality of inspection areas of the inspection object at a same time with the beam array, wherein one of the first inspection areas is smaller than an area formed by a quadrangle connecting respective centers of corresponding four adjacent beams of the beam array, and an adjacent area of the one first inspection area is not scanned with the beam array.

Abstract: A method for measuring a critical dimension of a mask pattern, including generating a mask pattern using an optically proximity-corrected (OPC) mask design including at least one block; measuring a first critical dimension of a target-region of interest (target-ROI) including neighboring blocks having a same critical dimension (CD), in the mask pattern; determining a group region of interest including the target-ROI and at least one neighboring block adjacent to the target-ROI; measuring second CDs of the neighboring blocks of the group region of interest; and correcting a measuring value of the first CD using a measuring value of the second CDs.

Abstract: A mask blank includes: a light transmitting substrate; a first layer disposed on the light transmitting substrate, and including a chromium compound that contains chromium and at least one element selected from oxygen, nitrogen, and carbon; and a second layer disposed on the first layer as an outermost layer from among the first and second layers, and including a silicon compound that contains silicon and at least one element selected from oxygen, nitrogen, and carbon, an alloy of a transition metal and silicon, or a transition metal and silicon compound that contains a transition metal, silicon, and at least one element selected from oxygen, nitrogen, and carbon. The thickness of the first layer is 45 nm or less, and the thickness of the second layer is 5 nm or greater. An optical density of a stack composed of the first layer and the second layer is 3 or greater.