Abstract: A battery pack mounting structure for vehicles, includes a frame side member extending in a front and rear direction on each side of a vehicle to form a chassis frame, a battery disposed to be overlapped horizontally on inside of both frame side members, and a battery case enclosing the battery therein, wherein a case side portion provided on a side of the battery case is coupled to a lower side of the frame side member.

Abstract: A button-type secondary battery includes: a lower can configured to operate as a first electrode terminal; an upper can coupled to the lower can to surround the lower can and configured to operate as a second electrode terminal; and a gasket between the lower can and the upper can. A recessed lower insertion groove and a recessed upper insertion groove are defined in a surface of the lower can and a surface of the upper can, which are in close contact with the gasket, respectively. The lower insertion groove and the upper insertion groove are spaced apart from each other so as not to face each other.

Abstract: A multilayer electronic component has a body and a non-conductive resin layer. The non-conductive resin layer includes a body cover portion disposed in a region of an external surface of the body in which an electrode layer of an external electrode is not disposed, and an extending portion extending from the body cover portion between the electrode layer and a conductive resin layer of the external electrode, to thereby suppress arc discharge, improve bending strength, and improve moisture resistance.

Abstract: The present disclosure includes a frame side member forming a chassis frame and disposed on both sides of a vehicle in a forward-backward direction, a battery disposed to overlap inwardly from the frame side member in a horizontal direction, and a battery case surrounding the battery and coupled to the frame side member, wherein a cross section of the frame side member forms a plurality of closed spaces.

Abstract: A battery pack mounting structure of a vehicle includes: a frame side member of a chassis frame provided so that an upper end portion thereof is located at a position spaced downward by a predetermined reference downward distance from a step height set in consideration of ease of boarding of passengers; a battery case provided so that a battery accommodated in the battery case overlaps the frame side member in a horizontal direction thereof; a case side portion forming a side surface of the battery case, coupled to a lower side of the frame side member, and including a lower end portion aligned with a lowest ground height of the vehicle; and a case lower plate forming the battery case while supporting a lower side of the battery and disposed at a position spaced upwards from the lowest ground height.

Abstract: An embodiment rear side member of a vehicle includes a front portion extending forward in a vehicle length direction, a rear portion extending rearward in the vehicle length direction and disposed offset to an inside of the vehicle with respect to the front portion, and a transition portion in a curved shape connecting a rear end of the front portion and a front end of the rear portion and passing through both a first point configured to engage with a first arm of a first type suspension and a second point configured to engage with a second arm of a second type suspension different from the first type suspension.

Abstract: A battery pack mounting structure of a vehicle includes: a frame side member of a chassis frame provided so that an upper end portion thereof is located at a position spaced downward by a predetermined reference downward distance from a step height set in consideration of ease of boarding of passengers; a battery case provided so that a battery accommodated in the battery case overlaps the frame side member in a horizontal direction thereof; a case side portion forming a side surface of the battery case, coupled to a lower side of the frame side member, and including a lower end portion aligned with a lowest ground height of the vehicle; and a case lower plate forming the battery case while supporting a lower side of the battery and disposed at a position spaced upwards from the lowest ground height.

Abstract: A chassis cab vehicle includes a lower frame, which constitutes a lower structure of the vehicle and is equipped with a pair of side members extending in a lengthwise direction of the vehicle. A battery is coupled between the side members. An upper body is coupled to a front portion of the lower frame and forms a cabin interior. A side sill is formed at a lower end at each side of the upper body and extends to a rear side of the cabin interior. The side sills overlap the respective side members in a lateral direction of the vehicle when coupled to the lower frame.

Abstract: A frame structure for a vehicle includes: an inner panel connected to a side member and defining an inner side of a rear part of the side member; an outer panel connected to a rear side of the side member and coupled to an outer side of the inner panel defining a closed cross-section together with the inner panel and defining an outer side of the rear part of the side member; an opening portion formed below the inner and outer panels partially opening the closed cross-section so that a front end of a rear suspension arm can be inserted into the opening portion; and a reinforcing member disposed in the opening portion defining the closed cross-section together with the outer panel and the inner panel and configured to close an internal space in the outer and inner panels.

Abstract: A frame structure for a purpose built vehicle (PBV) includes: two main side members extending while gradually rising toward a front of the PBV and extending in a front/rear direction to be disposed on either side of the PBV; two auxiliary side members respectively extending in a front/rear direction to be disposed on a lower side of the two main side members; a front cross member connecting the two auxiliary side members in a lateral direction of the PBV; and a plurality of vertical members respectively connecting the main side members and the auxiliary side members in a vertical direction.

Abstract: A multilayer electronic component has a body and a non-conductive resin layer. The non-conductive resin layer includes a body cover portion disposed in a region of an external surface of the body in which an electrode layer of an external electrode is not disposed, and an extending portion extending from the body cover portion between the electrode layer and a conductive resin layer of the external electrode, to thereby suppress arc discharge, improve bending strength, and improve moisture resistance.

Abstract: A frame for a purpose-built vehicle (PBV) includes: a front part frame positioned at a front side of a vehicle; a rear part frame positioned at a rear side of the vehicle; and a center part frame. The center part frame has a rectangular planar shape and is coupled between the front part frame and the rear part frame.

Abstract: Provided is a surface-treated implant structure. The implant structure according to an aspect includes a fixture acting as an artificial tooth root, and the nano-protrusions included in the outer peripheral surface of the fixture exhibit a certain level of height, depth, and aspect ratio.

Abstract: Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time.

Abstract: A method of fabricating a semiconductor device can include forming a trench in a semiconductor substrate, forming a first conductive layer on a bottom surface and side surfaces of the trench, and selectively forming a second conductive layer on the first conductive layer to be buried in the trench. The second conductive layer may be formed selectively on the first conductive layer by using an electroless plating method or using a metal organic chemical vapor deposition (MOCVD) or an atomic layer deposition (ALD) method.

Abstract: Methods of forming a semiconductor device include providing a substrate having an area including a source and a drain region of a transistor. A nickel (Ni) metal film is formed on the substrate area including the source and the drain region. A first heat-treatment process is performed including heating the substrate including the metal film from a first temperature to a second temperature at a first ramping rate and holding the substrate including the metal film at the second temperature for a first period of time. A second heat-treatment process is then performed including heating the substrate including the metal film from a third temperature to a fourth temperature at a second ramping rate and holding the substrate at the fourth temperature for a second period of time. The fourth temperature is different from the second temperature and the second period of time is different from the first period of time.

Abstract: Methods of forming a gate electrode can be provided by forming a trench in a substrate, conformally forming a polysilicon layer to provide a polysilicon conformal layer in the trench defining a recess surrounded by the polysilicon conformal layer, wherein the polysilicon conformal layer is formed to extend upwardly from a surface of the substrate to have a protrusion and the protrusion has a vertical outer sidewall adjacent the surface of the substrate, forming a tungsten layer in the recess to form an upper surface that includes an interface between the polysilicon conformal layer and the tungsten layer, and forming a capping layer being in direct contact with top surfaces of the polysilicon conformal layer and the tungsten layer without any intervening layers.

Abstract: A gate structure can include a polysilicon layer, a metal layer on the polysilicon layer, a metal silicide nitride layer on the metal layer and a silicon nitride mask on the metal silicide nitride layer.

Abstract: Disclosed are a variety of methods for increasing the relative thickness in the peripheral or edge regions of gate dielectric patterns to suppress leakage through these regions. The methods provide alternatives to conventional GPOX processes and provide the improved leakage resistance without incurring the degree of increased gate electrode resistance associated with GPOX processes. Each of the methods includes forming a first opening to expose an active area region, forming an oxidation control region on the exposed portion and then forming a second opening whereby a peripheral region free of the oxidation control region is exposed for formation of a gate dielectric layer. The resulting gate dielectric layers are characterized by a thinner central region surrounded or bounded by a thicker peripheral region.

Abstract: In an ohmic layer and methods of forming the ohmic layer, a gate structure including the ohmic layer and a metal wiring having the ohmic layer, the ohmic layer is formed using tungsten silicide that includes tungsten and silicon with an atomic ratio within a range of about 1:5 to about 1:15. The tungsten silicide may be obtained in a chamber using a reaction gas including a tungsten source gas and a silicon source gas by a partial pressure ratio within a range of about 1.0:25.0 to about 1.0:160.0. The reaction gas may have a partial pressure within a range of about 2.05 percent to about 30.0 percent of a total internal pressure of the chamber. When the ohmic layer is employed for a conductive structure, such as a gate structure or a metal wiring, the conductive structure may have a reduced resistance.