Abstract: The present invention generally is directed toward a spinal fixation system whereby a coupling element allows the physician to selectively lock or unlock either the connection between the coupling element and a fastener, such as to allow for repositioning of the coupling element, or the connection between the coupling element and an elongate rod. The locking or unlocking of these connections may be made independently and as desired by the physician.

Abstract: One integrated circuit (IC) product disclosed herein includes a first conductive source/drain contact structure of a first transistor and an insulating source/drain cap positioned above at least a portion of an upper surface of the first conductive source/drain contact structure. In one example, the product also includes a gate-to-source/drain (GSD) contact structure that is conductively coupled to the first conductive source/drain contact structure and a first gate structure of a second transistor, wherein an upper surface of the GSD contact structure is positioned at a first level that is at a level above the upper surface of the first conductive source/drain contact structure, and a CB gate contact structure that is conductively coupled to a second gate structure of a third transistor, wherein an upper surface of the CB gate contact structure is positioned at a level that is above the first level.

Abstract: Structures for a static random access memory (SRAM) bitcell and methods for forming a SRAM bitcell. The SRAM includes a storage element with a first pull-up (PU) vertical-transport field-effect transistor (VTFET) having a first bottom source/drain region and a fin projecting from the first bottom source/drain region, and a second pull-up (PU) VTFET with a second bottom source/drain region and a fin projecting from the second bottom source/drain region. The fin of the first PU VTFET is arranged over a first active region in which the first bottom source/drain region is centrally arranged, and the fin of the second PU VTFET is arranged over a second active region in which the second bottom source/drain region is centrally arranged. The second source/drain region is aligned with the first bottom source/drain region. A read port may be connected with the storage element, and may also be formed using VTFETs.

Abstract: A joint spacer therapeutically maintains separation of bones of a joint. A carriage is slideably retained within the frame and has at least one ramped surface. An actuator screw is threadably engaged with the frame, and rotatably connected to the carriage, to cause the carriage to slideably move within the frame when the actuator screw is rotated. First and second endplates engage the bones of the joint, and each has at least one ramped surface that is mateable with the ramped surface of the carriage, whereby when the carriage is slideably moved by rotation of the actuator screw, the endplates ramped surface slides against the carriage ramped surface to cause the endplates to move along an axis transverse to the longitudinal axis of the frame, to increase the height of the spacer. Piercing elements are connected to the carriage to pierce bone of the joint when the carriage is moved.

Abstract: An intervertebral prosthetic implant having a first endplate having a first surface configured to substantially engage with a first vertebral body and a second surface having an extension with a concave contact surface, the concave contact surface being spaced apart from the second surface. A second endplate is provided with a first surface configured to substantially engage with a second vertebral body and a second surface comprising a convex contact surface, and the second endplate having a securing element positioned along and above the second surface defining a first and second window on opposing sides of the second surface. The securing element extends along the width and length of the lower endplate and configured with an access hole. An extension portion extends from the first surface of the first endplate through the access hole of the securing element and contacts the second surface of the second endplate.

Abstract: A first S/D region includes a first P-type region, a first N-type region, and a first conductive layer thereon to define a first cell node. A second S/D region includes a second P-type region, a second N-type region, and a second conductive layer thereon to define a second cell node. A PDL transistor and PGLA, PGLB transistors have bottom SD regions in the first N-type region. A PUL transistor has a bottom SD region positioned in the first P-type region. A PDR transistor and PGRA, PGRB have bottom SD regions in the second N-type region. A PUR transistor has a bottom SD region in the second P-type region. A first gate is positioned around channel regions of the PUL and PDL transistors and conductively coupled to the second node. A second gate is positioned around channel regions of the PUR and PDR transistors and conductively coupled to the first node.

Abstract: A method for forming a buried local interconnect in a source/drain region is disclosed including, among other things, forming a plurality of VOC structures, forming a first source/drain region between a first pair of the plurality of VOC structures, forming a second source/drain region between a second pair of the plurality of VOC structures, and forming an isolation structure between the first and second source/drain regions. A first trench is formed in the first and second source/drain regions and the isolation structure. A liner layer is formed in the first trench, and a first conductive line is formed in the first trench. A dielectric material is formed above the first conductive line. A first opening is formed in the dielectric material to expose a portion of the first conductive line. A first conductive feature is formed in the first opening contacting the exposed portion of the first conductive line.

Abstract: Structures and circuits including multiple nanosheet field-effect transistors and methods of forming such structures and circuits. A complementary field-effect transistor includes a first nanosheet transistor with a source/drain region and a second nanosheet transistor with a source/drain region stacked over the source/drain region of the first nanosheet transistor. A contact extends vertically to connect the source/drain region of the first nanosheet transistor of the complementary field-effect transistor and the source/drain region of the second nanosheet transistor of the complementary field-effect transistor.

Abstract: A soft tissue repair system is provided for covering or filling openings in the annulus of an intervertebral disc. The soft tissue repair system uses a single plug or a combination of a first plug and a second plug. The second plug is a flowable plug such as an adhesive material or a material that hardens to a flexible plug material. Each plug is configured to close the opening in the annulus and can be positioned within the opening, over the opening at the exterior surface or over the opening at the interior surface. The plug can also be combined with a clamping mechanism that engages the annulus to secure the plug in the opening.

Abstract: Structures for a bitcell of a two-port static random access memory (SRAM) and methods for forming a structure for a bitcell of a two-port SRAM. A storage element of the SRAM includes a first pull-up (PU) vertical-transport field-effect transistor (VTFET) with a fin, a first pull-down (PD) VTFET with a fin that is aligned in a first row with the fin of the first PU VTFET, a second PU VTFET with a fin, and a second PD VTFET with a fin that is aligned in a second row with the fin of the second PU VTFET. The structure further includes a read port coupled with the storage element. The read port includes a read port pull-down (RPD) VTFET with a fin and a read port access (RPG) VTFET with a fin that is aligned in a third row with the fin of the RPG VTFET.

Abstract: One illustrative 6T SRAM cell structure disclosed herein includes a first active region with a first N-type pass gate transistor, a first N-type pull-down transistor and a first P-type pull-up transistor, each of which are formed in and above the first active region, wherein the first N-type pull-down transistor is positioned laterally between the first N-type pass gate transistor and the first P-type pull-up transistor, and a second active region with a second N-type pass gate transistor, a second N-type pull-down transistor and a second P-type pull-up transistor, each of which are formed in and above the second active region, wherein the second N-type pull-down transistor is positioned laterally between the second N-type pass gate transistor and the second P-type pull-up transistor.

Abstract: A piston ring that is pre-treated by grit blasting to a defined roughness, followed by PVD coating with a metal nitride to a thickness of at least 10 ?m, leaving peaks and valleys in the coated piston ring. The coated piston ring is then lapped to remove the peaks without penetrating the coating, so that valleys and plateaus remain in the coated surface. The resulting piston ring exhibits superior coating retention due to the increased surface area created by the grit blasting, and yet also superior performance, as the cavities remaining increase the porosity of the coating and thus enhance the lubrication of the ring.

Abstract: The present invention relates generally to a prosthetic spinal disc for replacing a damaged disc between two vertebrae of a spine and methods for inserting said discs. The intervertebral prosthetic discs are provided with connections for facilitating implantation and removal and features which enhance primary and secondary stability over time.

Abstract: Implementations of the present disclosure generally relate to an improved factory interface that is coupled to an on-board metrology housing configured for measuring film properties of a substrate. In one implementation, an apparatus comprises a factory interface, and a metrology housing removably coupled to the factory interface through a load port, the metrology housing comprises an on-board metrology assembly for measuring properties of a substrate to be transferred into the metrology housing.

Abstract: A magneto-resistive memory (MRM) structure includes a source line and a first transistor that includes a source region and a drain region. The source line is electrically connected to the source region of the first transistor. The MRM structure further includes an MRM cell that includes an MRM transistor electrically in series with an MRM magnetic tunnel junction (MTJ). The MRM transistor is electrically connected to the drain region of the first transistor such that the MRM cell is electrically in series with the first transistor. Still further, the MRM structure further includes a voltage amplifier electrically connected to a mid-point node of the first transistor and the MRM transistor, a sense-amplifier electrically connected to the voltage amplifier, and a bit line electrically connected to the MRM MTJ of the MRM cell.

Abstract: In an embodiment, a method includes depositing a silicon matrix on a substrate; exposing the silicon matrix to a first wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber; exposing the silicon matrix to a second wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the second wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range; exposing the silicon matrix to a third wavelength or wavelength range of ultraviolet radiation in an ultraviolet processing chamber, wherein the third wavelength or wavelength range includes a wavelength lower than any wavelength in the first wavelength or wavelength range and second wavelength or wavelength range; and a repeat exposure of any wavelength range. In some embodiments, a healing operation comprising a deposition operation, a reactive cure, a thermal cure, or a combination thereof may be performed.

Abstract: Improved spinal instruments are provided. In particular, the present application relates to an improved rongeur that allows for multiple bites of bone to be performed in a patient before removing the rongeur from the patient. The rongeur includes a lower shaft and an upper shaft slidable relative to the lower shaft. The lower shaft and upper shaft form a jaw mechanism that can take multiple bites of bone, which can be deposited in a storage cavity formed in the upper shaft. To assist in removing the bone from within the storage cavity, an internal plunger mechanism can be provided that is actuated by a finger hold. In addition, at least portions of the upper shaft are detachable from the lower shaft such that the upper shaft can be thoroughly cleaned and re-used if desired.

Abstract: The described disclosure presents embodiments of an efficient shortwave radio technique using a network of multiple sites located in and around an operating region (e.g., continental USA), calibrated distributed beacons, a detailed knowledge of ionospheric behavior, and sophisticated operational tools and software, that geo-locates targets without depending on satellites. The embodiments of the technique described herein, for example, accurately may locate a target by utilizing remote field units, a network of radio receive sites, receivers that accept and time stamp pertinent signals, demodulators that recognize and extract meaningful data from received signals, communications from all receive sites to a Network Operations Center (NOC), communications from NOC to field units to keep shortwave channel choices relevant and effective, and a processor within the NOC that analyzes and evaluates data.

Abstract: A joint spacer therapeutically maintains separation of bones of a joint. A carriage is slideably retained within the frame and has at least one ramped surface. An actuator screw is threadably engaged with the frame, and rotatably connected to the carriage, to cause the carriage to slideably move within the frame when the actuator screw is rotated. First and second endplates engage the bones of the joint, and each has at least one ramped surface that is mateable with the ramped surface of the carriage, whereby when the carriage is slideably moved by rotation of the actuator screw, the endplates ramped surface slides against the carriage ramped surface to cause the endplates to move along an axis transverse to the longitudinal axis of the frame, to increase the height of the spacer. Piercing elements are connected to the carriage to pierce bone of the joint when the carriage is moved.

Abstract: Structures and circuits including multiple nanosheet field-effect transistors and methods of forming such structures and circuits. A complementary field-effect transistor includes a first nanosheet transistor with a source/drain region and a second nanosheet transistor with a source/drain region stacked over the source/drain region of the first nanosheet transistor. A contact extends vertically to connect the source/drain region of the first nanosheet transistor of the complementary field-effect transistor and the source/drain region of the second nanosheet transistor of the complementary field-effect transistor.