Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

Abstract: Systems and methods are provided for matching the impedance of a load to an impedance of a power generator. Embodiments include a matching network with a dynamically configurable component assembly array couplable to the variable impedance load and the RF power generator, wherein the component assembly array includes one or more tune and load electrical components. The component assembly array is adapted to be configured for each recipe step, and at least one of the electrical components is a variable impedance component adjustable to reduce RF energy reflected from the variable impedance load for each recipe step. Numerous other aspects are provided.

Abstract: An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.

Abstract: A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

Abstract: A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.

Abstract: Systems and methods are provided for matching the impedance of a load to an impedance of a power generator. Embodiments include a matching network with a dynamically configurable component assembly array couplable to the variable impedance load and the RF power generator, wherein the component assembly array includes one or more tune and load electrical components. The component assembly array is adapted to be configured for each recipe step, and at least one of the electrical components is a variable impedance component adjustable to reduce RF energy reflected from the variable impedance load for each recipe step. Numerous other aspects are provided.

Abstract: A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises two conductors, one of which has a plurality of apertures. In one aspect, apertures in different portions of the conductor have different sizes, spacing or orientations. In another aspect, adjacent apertures at successive longitudinal positions are offset along the transverse dimension. In another aspect, the apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

Abstract: A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

Abstract: For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.

Abstract: A plasma source includes upper and lower portions. In a first aspect, an electrical power source supplies greater power to the upper portion than to the lower portion. In a second aspect, the plasma source includes three or more power couplers that are spaced apart vertically, wherein the number of plasma power couplers in the upper portion is greater than the number of plasma power couplers in the lower portion. The upper and lower portions of the plasma source can be defined as respectively above and below a horizontal geometric plane that bisects the vertical height of the plasma source. Alternatively, the upper and lower portions can be defined as respectively above and below a horizontal geometric plane that bisects the combined area of first and second workpiece positions.

Abstract: Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

Abstract: In large area plasma processing systems, process gases may be introduced to the chamber via the showerhead assembly which may be driven as an RF electrode. The gas feed tube, which is grounded, is electrically isolated from the showerhead. The gas feed tube may provide not only process gases, but also cleaning gases from a remote plasma source to the process chamber. The inside of the gas feed tube may remain at either a low RF field or a zero RF field to avoid premature gas breakdown within the gas feed tube that may lead to parasitic plasma formation between the gas source and the showerhead. By feeding the gas through an RF choke, the RF field and the processing gas may be introduced to the processing chamber through a common location and thus simplify the chamber design.

Abstract: A plasma processing system having at-electrode RF matching and a method for processing substrates utilizing the same is provided. In one embodiment, the plasma processing system includes a chamber body, the substrate support, an electrode, a lid assembly and an RF tuning element. A substrate support is disposed in a processing volume defined in the chamber body. The electrode is positioned above the substrate support and below a cover of the lid assembly. The RF tuning element is disposed between the cover and the electrode and is coupled to the electrode.

Abstract: A transmission line RF applicator apparatus and method for coupling RF power to a plasma in a plasma chamber. The apparatus comprises an inner conductor and one or two outer conductors. The main portion of each of the one or two outer conductors includes a plurality of apertures that extend between an inner surface and an outer surface of the outer conductor.

Abstract: The present invention generally relates to a linear PECVD apparatus. The apparatus is designed to process two substrates simultaneously so that the substrates share plasma sources as well as gas sources. The apparatus has a plurality of microwave sources centrally disposed within the chamber body of the apparatus. The substrates are disposed on opposite sides of the microwave sources with the gas sources disposed between the microwave sources and the substrates. The shared microwave sources and gas sources permit multiple substrates to be processed simultaneously and reduce the processing cost per substrate.

Abstract: A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.

Abstract: An apparatus for introducing gas into a processing chamber comprising one or more gas distribution tubes having gas-injection holes which may be larger in size, greater in number, and/or spaced closer together at sections of the gas introduction tubes where greater gas conductance through the gas-injection holes is desired. An outside tube having larger gas-injection holes may surround each gas distribution tube. The gas distribution tubes may be fluidically connected to a vacuum foreline to facilitate removal of gas from the gas distribution tube at the end of a process cycle.

Abstract: Substrate support methods and apparatus include vertically aligned lift pins that have bearing surfaces that engage friction plates and/or magnetic fields to maintain the vertical orientation of the lift pins during substrate lifting. In some embodiments, a magnetic field and/or weighting may alternatively or additionally be used to control the vertical orientation of the lift pins, limit the angle of the lift pins, and/or prevent the lift pins from unintentionally binding in a susceptor as the susceptor is raised and prevent the resulting uneven support of the substrate.