Abstract: An apparatus for providing a return current path for RF current between a chamber wall and a substrate support is provided comprising a low impedance flexible curtain having a first end and a second end, the first end adapted to be electrically connected to the chamber wall and the second end adapted to be connected to the substrate support, wherein the curtain further comprises at least one fold in the curtain material, located an axial distance between the first end and the second end, and at least one perforation cut into the curtain proximate the second end.

Abstract: A semiconductor processing system includes a processing chamber system and an activated gas source coupled to the chamber system. The gas source includes a primary winding coupled to an RF generator and a secondary winding effectively formed by the conductance of a plasma filled passageway in a toroidal chamber. The primary winding and the secondary winding are coaxially aligned to provide a suitable inductive coupling between the windings.

Abstract: An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

Abstract: A method for the deposition of a silicon dioxide film onto a substrate using plasma enhanced chemical vapor deposition and TEOS is disclosed. The method includes controlling the deposition rate of silicon dioxide on a substrate by pulsing the radio frequency power supply used to generate a TEOS oxide plasma. The obtained silicon dioxide film is good in electrical and mechanical film properties for the application of forming thin film transistors.

Abstract: A four post ROPS is provided with left and right front vertical posts and left and right rear vertical posts. The rear vertical posts have a bottom portion that extends upwardly, forwardly and outwardly from the floor of the operator's station. Each left and right front vertical post has an arrowhead shaped cross section. The arrow shaped cross section has a main lobe, a secondary lobe and a connecting portion located between the two lobes. The arrowhead shaped cross section defines a windshield channel for receiving the side edge of the windshield, and a side door channel for receiving the side edge of the side door. The arrowhead shape has an elongated axis that is in line with the line of sight of the operator when driving the backhoe loader.

Abstract: A method for the deposition of a silicon dioxide film onto a substrate using plasma enhanced chemical vapor deposition and TEOS is disclosed. The method includes controlling the deposition rate of silicon dioxide on a substrate by pulsing the radio frequency power supply used to generate a TEOS oxide plasma. The obtained silicon dioxide film is good in electrical and mechanical film properties for the application of forming thin film transistors.

Abstract: An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

Abstract: An apparatus for distributing RF power outputs to a first electrode in a parallel plate electrode system for generating plasma in depositing films on a substrate. A RF power output is applied to a distributed RF matching network to excite a plasma from a process gas stream to deposit a uniform film onto the substrate. The distributed matching network includes a load capacitor for receiving a radio frequency power input and an inductor having first and second ends with the first end coupled to the load capacitor. The matching network also includes multiple drive capacitors each of which couples the second end of the inductor to a different one of multiple points distributed on the first electrode. The capacitance of each drive capacitor is user-selectable, and the points on the backing plate to which the drive capacitors are coupled are user-selectable.

Abstract: A four post ROPS is provided with left and right front vertical posts and left and right rear vertical posts. The rear vertical posts have a bottom portion that extends upwardly, forwardly and outwardly from the floor of the operator's station. Each left and right front vertical post has an arrowhead shaped cross section. The arrow shaped cross section has a main lobe, a secondary lobe and a connecting portion located between the two lobes. The arrowhead shaped cross section defines a windshield channel for receiving the side edge of the windshield, and a side door channel for receiving the side edge of the side door. The arrowhead shape has an elongated axis that is in line with the line of sight of the operator when driving the backhoe loader.

Abstract: A four post ROPS is provided with left and right front vertical posts and left and right rear vertical posts. The rear vertical posts have a bottom portion that extends upwardly, forwardly and outwardly from the floor of the operator's station. Each left and right front vertical post has an arrowhead shaped cross section. The arrow shaped cross section has a main lobe, a secondary lobe and a connecting portion located between the two lobes. The arrowhead shaped cross section defines a windshield channel for receiving the side edge of the windshield, and a side door channel for receiving the side edge of the side door. The arrowhead shape has an elongated axis that is in line with the line of sight of the operator when driving the backhoe loader.

Abstract: A substrate support plate including a heating element for use in a process chamber is described. The heating element includes an outer sheath, a heating filament and a thermally-conductive and electrically insulative sealing material. The sealing material comprises a diamond powder.

Abstract: An apparatus deposits a high quality film onto a transparent substrate in a reactor. The transparent substrate may be made of glass, quartz or a polymer such as plastic. The transparent substrate is heated in a process chamber and a process gas stream is introduced into the process chamber. The apparatus generates a high frequency power output and a low frequency power output from a high frequency power supply and a low frequency power supply, respectively. The high frequency power output is generated at a frequency of about thirteen megahertz or more, and at a power from about one to five kilowatts, while the low frequency power output is generated at a frequency of about two megahertz or less, and at a power from about 300 to two kilowatts. The high frequency power output and the low frequency power output are superimposed and used to excite a plasma from the process gas stream at a pressure between about 0.4 Torr and 3 Torr, and at a temperature between about 250.degree. C. and 450.degree. C.

Abstract: A substrate support plate including a heating element for use in a process chamber is described. The heating element includes an outer sheath, a heating filament and a thermally-conductive and electrically insulative sealing material. The sealing material comprises a diamond powder.

Abstract: An impedance matching network for an RF coupled plasma reactor having RF excitation apparatus receiving RF power through the impedance matching network from an RF generator for producing a plasma in the reactor has at least one capacitor connected to the output of the RF generator and having a capacitance value providing an impedance match to the plasma impedance during a steady state of the plasma, at least a first rapidly tunable capacitor connected in parallel with the one capacitor, the rapidly tunable capacitor being rapidly switchable between a high capacitance value providing a match to the plasma impedance during the onset of plasma ignition and a lesser minimum capacitance value, and a controller for rapidly switching the rapidly tunable capacitor from the high to the lesser capacitance value upon reaching the plasma steady state.

Abstract: A temperature measurement system for use in a thin film deposition system is based on optical pyrometry on the backside of the deposition substrate. The backside of the deposition substrate is viewed through a channel formed in the susceptor of the deposition system. Radiation from the backside of the deposition substrate passes through an infrared window and to an infrared detector. The signal output by the infrared detector is coupled to electronics for calculating the temperature of the deposition substrate in accordance with blackbody radiation equations. A tube-like lightguide shields the infrared detector from background radiation produced by the heated susceptor.

Abstract: A temperature measurement system for use in a thin film deposition system is based on optical pyrometry on the backside of the deposition substrate. The backside of the deposition substrate is viewed through a channel formed in the susceptor of the deposition system. Radiation from the backside of the deposition substrate passes through an infrared window and to an infrared detector. The signal output by the infrared detector is coupled to electronics for calculating the temperature of the deposition substrate in accordance with blackbody radiation equations. A tube-like lightguide shields the infrared detector from background radiation produced by the heated susceptor.