Abstract: A gas turbine device includes an inlet casing and a stator diaphragm provided inside the inlet casing. The stator diaphragm has an integral inner stator shroud and an outer stator shroud and a plurality of stator vanes provided in a circumferential arrangement between the inner stator shroud and the outer stator shroud. A plurality of key slots is provided in a circumferential arrangement on the stator diaphragm and a corresponding plurality of key slots is provided in a circumferential arrangement on the inlet casing. The key slots provided on the stator diaphragm are aligned with the plurality of key slots provided on the inlet casing. A key is inserted into each of the plurality of key slots provided to prevent rotation of the stator diaphragm with respect to the inlet casing. The stator diaphragm is secured in an axial direction by a stator shear ring.

Abstract: A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also deposited on a second region of the continuous active layer such that the first raised epitaxial layer is in close proximity to the second raised epitaxial layer. A mask may be used to etch a trench structure into the continuous active layer at both the first and the second raised epitaxial layer, whereby the etched trench structure is filled with isolation material for electrically isolating the first raised epitaxial layer from the second raised epitaxial layer.

Abstract: A method of forming a semiconductor structure may include preparing a continuous active layer in a region of the substrate and forming a plurality of adjacent gates on the continuous active layer. A first raised epitaxial layer may be deposited on a recessed region of the continuous active layer between a first and a second one of the plurality of gates, whereby the first and second gates are adjacent. A second raised epitaxial layer may be deposited on another recessed region of the continuous active layer between the second and a third one of the plurality of gates, whereby the second and third gates are adjacent. Using a cut mask, a trench structure is etched into the second gate structure and a region underneath the second gate in the continuous active layer. The trench is filled with isolation material for electrically isolating the first and second raised epitaxial layers.

Abstract: Methods for the production of ammonium sulfate nitrate include (a) providing at a temperature of less than about 175° C. a melt including ammonium nitrate, ammonium sulfate, and water and the water content is greater than about 2 wt % based on the total weight of ammonium nitrate, ammonium sulfate and water in the melt, and (b) solidifying from the melt 1:2 ANS double salt by cooling at least a portion of the melt at a rate of less than about 100° C./min.

Abstract: Processes for preparing alkylation aromatic compounds are provided. One process for preparing alkylated aromatic compounds includes reacting an aromatic compound and an olefin in at least one primary alkylation reaction in the presence of a first alkylation catalyst to produce a first effluent. The first effluent is split into a first product-rich stream and a first recycle stream, and the first recycle stream is recycled to the at least one primary alkylation reaction. Unreacted aromatic compound from the first product-rich stream and an additional olefin are reacted in at least one downstream alkylation reaction in the presence of a second alkylation catalyst to produce a second effluent. The second effluent is split into a second product-rich stream and a second recycle stream, and the second recycle stream is recycled to the at least one primary alkylation reaction and, optionally, to the at least one downstream alkylation reaction.

Abstract: Processes for preparing alkylation aromatic compounds are provided herein. In an embodiment, a process for preparing alkylated aromatic compounds includes reacting an aromatic compound and an olefin in a first alkylation reaction in the presence of a first alkylation catalyst to produce a first effluent that includes an alkylated aromatic compound and unreacted aromatic compound. Unreacted aromatic compound from the first effluent and additional olefin are reacted in at least one downstream alkylation reaction in the presence of a second alkylation catalyst to produce a second effluent including the alkylated aromatic compound. A recycle stream including the alkylated aromatic compound is recycled from the second effluent to the at least one downstream alkylation reaction and, optionally, the first alkylation reaction. A ratio of the recycle stream to a total mass flow is greater in the at least one downstream alkylation reaction than in the first alkylation reaction.

Abstract: A system for heating a hydrocarbon containing formation includes a heater having an elongated ferromagnetic metal heater section. The heater is located in an opening in a formation. The heater section is configured to heat the hydrocarbon containing formation. The exposed ferromagnetic metal has a sulfidation rate that goes down with increasing temperature of the heater, when the heater is in a selected temperature range.

Abstract: A method of forming a semiconductor structure on a substrate is provided. The method may include preparing a continuous active layer on a region of the substrate and depositing a first raised epitaxial layer on a first region of the continuous active layer. A second raised epitaxial layer is also deposited on a second region of the continuous active layer such that the first raised epitaxial layer is in close proximity to the second raised epitaxial layer. A mask may be used to etch a trench structure into the continuous active layer at both the first and the second raised epitaxial layer, whereby the etched trench structure is filled with isolation material for electrically isolating the first raised epitaxial layer from the second raised epitaxial layer.

Abstract: A Circuit architecture and a method for rapid and accurate statistical characterization of the variations in the electrical characteristics of CMOS process structures, MOS devices and Circuit parameters is provided. The proposed circuit architecture and method enables a statistical characterization throughput of <1 ms/DC sweep at <2 mV or <1 nA resolution accuracy of variations in voltage or current of the device under test. Salient features of proposed circuit architecture include a programmable ramp voltage generator that stimulates the device under test, a dual input 9-11 bit cyclic ADC that captures input and output DC voltage/current signals to/from the device under test, a 2 Kb latch bank that captures 9-11 bit streams for each measurement point in a DC sweep of programmable granularity and a clocking and control scheme that enables continuous measurement and stream out of digital data blocks from which the analog characteristics of the devices under test are reconstructed post measurement.

Abstract: The invention relates to a manufacturing process of a photovoltaic solar cell (100) comprising: providing high doped areas (20) on the rear side (18) of the photovoltaic solar cell (100), providing localized metal contacts (30) localized on said high doped areas (20), providing a passivation layer (50) covering a surface (52) between said contacts (30), wherein the contacts (30) remain substantially free of the passivation layer (50), and depositing a metal layer (32) for a back surface field.

Abstract: Processes for preparing alkylation aromatic compounds are provided herein. In an embodiment, a process for preparing alkylated aromatic compounds includes reacting an aromatic compound and an olefin in a first alkylation reaction in the presence of a first alkylation catalyst to produce a first effluent that includes an alkylated aromatic compound and unreacted aromatic compound. Unreacted aromatic compound from the first effluent and additional olefin are reacted in at least one downstream alkylation reaction in the presence of a second alkylation catalyst to produce a second effluent including the alkylated aromatic compound. A recycle stream including the alkylated aromatic compound is recycled from the second effluent to the at least one downstream alkylation reaction and, optionally, the first alkylation reaction. A ratio of the recycle stream to a total mass flow is greater in the at least one downstream alkylation reaction than in the first alkylation reaction.

Abstract: Processes for preparing alkylation aromatic compounds are provided. One process for preparing alkylated aromatic compounds includes reacting an aromatic compound and an olefin in at least one primary alkylation reaction in the presence of a first alkylation catalyst to produce a first effluent. The first effluent is split into a first product-rich stream and a first recycle stream, and the first recycle stream is recycled to the at least one primary alkylation reaction. Unreacted aromatic compound from the first product-rich stream and an additional olefin are reacted in at least one downstream alkylation reaction in the presence of a second alkylation catalyst to produce a second effluent. The second effluent is split into a second product-rich stream and a second recycle stream, and the second recycle stream is recycled to the at least one primary alkylation reaction and, optionally, to the at least one downstream alkylation reaction.

Abstract: A test baseplate is configured to support and expose at least one storage device component to particle evacuation and particle analysis. The test baseplate includes a base having an upper surface that extends between an outer peripheral wall and an inner peripheral wall and having a lower surface defined by the inner peripheral wall. The test baseplate also includes a top clamp configured to be fastened to the upper surface of the base to secure the at least one storage device component to the base.

Abstract: High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tublar that is at least partially made from a material containing at least one of the metal alloys.

Abstract: A photovoltaic module (10) comprises a plurality of solar cells (20) interconnected in serial arrays (15). At least some of the solar cells (20) are equipped with control units (30) comprising at least one thermal sensor (42) and one power sensor (43). The control unit (30) comprises means (35) for removing a specific solar cell (20?) from the photovoltaic module (10) network if said solar cell (20?) is found to have reached a predefined level of degradation. In a preferred embodiment, control unit (30) is an ASIC chip (40) in thermal contact with said solar cell (20) and electrically connected to said solar cell (20).

Abstract: A Circuit architecture and a method for rapid and accurate statistical characterization of the variations in the electrical characteristics of CMOS process structures, MOS devices and Circuit parameters is provided. The proposed circuit architecture and method enables a statistical characterization throughput of <1 ms/DC sweep at <2 mV or <1 nA resolution accuracy of variations in voltage or current of the device under test. Salient features of proposed circuit architecture include a programmable ramp voltage generator that stimulates the device under test, a dual input 9-11 bit cyclic ADC that captures input and output DC voltage/current signals to/from the device under test, a 2 Kb latch bank that captures 9-11 bit streams for each measurement point in a DC sweep of programmable granularity and a clocking and control scheme that enables continuous measurement and stream out of digital data blocks from which the analog characteristics of the devices under test are reconstructed post measurement.

Abstract: The invention relates to a manufacturing process of a photovoltaic solar cell (100) comprising: providing high doped areas (20) on the rear side (18) of the photovoltaic solar cell (100), providing localized metal contacts (30) localized on said high doped areas (20), providing a passivation layer (50) covering a surface (52) between said contacts (30), wherein the contacts (30) remain substantially free of the passivation layer (50), and depositing a metal layer (32) for a back surface field.

Abstract: A system for enabling input/out virtualization for a device is disclosed. In one embodiment, the system includes a plurality of host CPUs; a multi-root switch connected to each of the plurality of host CPUs via respective buses; and an inline PCI virtualizing device connected to the multi-root switch via a front-side bus and the device via a back-side bus, the inline PCI virtualizing device including a plurality sets of registers, each of the plurality sets of registers accessible by a corresponding host CPU of the plurality of host CPUs and implementing functionalities of the device.

Abstract: A method system for a novelty greeting card combined with an embodied 3-D sculpture model kit is contained within a postal envelope. The invention's items are at least one or more inscribed parallel planar rectangular sheets bound in dependant form to enable an open and close greeting card function. The envelope is inscribed with systematic directions to guide construction of the novelty card's embodied sculpture model kit. The card is signed by a sender including a recipient's name; said sender gives card as a gift to a recipient to apply methods of the invention's intent. As recipient deploys invention's construction system by implementing tools and parts embodied in novelty card. The sender's actual signature and recipient's name are conveyed though the method of construction and retained upon the final resulting sculpture of the invention. All construction elements, tools and parts derive solely from the planar sheets that comprise the invention.

Abstract: Sensors on the integrated circuit are used to detect the current operating state of the chip, such as frequency, voltage, temperature characteristics, or variation in the integrated circuit manufacturing process. In response, the integrated circuit may choose to modify operational parameters (such as frequency, voltage, or power-down states) in order to dynamically and autonomously maintain an optimal performance and/or power-efficiency operational point.