Abstract: A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.

Abstract: Methods of fabricating P-I-N diodes, structures for P-I-N diodes and design structure for P-I-N diodes. A method includes: forming a trench in a silicon substrate; forming a doped region in the substrate abutting the trench; growing an intrinsic epitaxial silicon layer on surfaces of the trench; depositing a doped polysilicon layer to fill remaining space in the trench, performing a chemical mechanical polish so top surfaces of the intrinsic epitaxial silicon layer and the doped polysilicon layer are coplanar; forming a dielectric isolation layer in the substrate; forming a dielectric layer on top of the isolation layer; and forming a first metal contact to the doped polysilicon layer through the dielectric layer and a second contact to the doped region the dielectric and through the isolation layer.

Abstract: An overhead door assembly includes a horizontal track, a transition track and a vertical track. The horizontal track has a first axial end and an oppositely disposed second axial end. The transition track has a first end and a second end and is curved. The first end is engaged to the second axial end of the horizontal track. The vertical track includes a first end portion and a second end portion. The first end portion is rigidly mounted to the second end of the transition track. The vertical track includes a plurality of guide portions and a plurality of jog portions that are alternately disposed along the vertical track. The plurality of guide portions and the plurality of jog portions cooperatively define a channel. The plurality of jog portions is offset from the plurality of guide portions.

Abstract: High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tublar that is at least partially made from a material containing at least one of the metal alloys.

Abstract: In a first aspect, a first method of manufacturing a high-voltage transistor is provided. The first method includes the steps of (1) providing a substrate including a bulk silicon layer that is below an insulator layer that is below a silicon-on-insulator (SOI) layer; and (2) forming one or more portions of a transistor node including a diffusion region of the transistor in the SOI layer. A portion of the transistor node is adapted to reduce a voltage greater than about 5 V within the transistor to a voltage less than about 3 V. Numerous other aspects are provided.

Abstract: High strength metal alloys are described herein. At least one composition of a metal alloy includes chromium, nickel, copper, manganese, silicon, niobium, tungsten and iron. System, methods, and heaters that include the high strength metal alloys are described herein. At least one heater system may include a canister at least partially made from material containing at least one of the metal alloys. At least one system for heating a subterranean formation may include a tubular that is at least partially made from a material containing at least one of the metal alloys.

Abstract: A method system for a novelty greeting card combined with an embodied 3-D sculpture model kit is contained within a postal envelope. The invention's items are at least one or more inscribed parallel planar rectangular sheets bound in dependant form to enable an open and close greeting card function. The envelope is inscribed with systematic directions to guide construction of the novelty card's embodied sculpture model kit. The card is signed by a sender including a recipient's name; said sender gives card as a gift to a recipient to apply methods of the invention's intent. As recipient deploys invention's construction system by implementing tools and parts embodied in novelty card. The sender's actual signature and recipient's name are conveyed though the method of construction and retained upon the final resulting sculpture of the invention. All construction elements, tools and parts derive solely from the planar sheets that comprise the invention.

Abstract: Methods of fabricating P-I-N diodes, structures for P-I-N diodes and design structure for P-I-N diodes. A method includes: forming a trench in a silicon substrate; forming a doped region in the substrate abutting the trench; growing an intrinsic epitaxial silicon layer on surfaces of the trench; depositing a doped polysilicon layer to fill remaining space in the trench, performing a chemical mechanical polish so top surfaces of the intrinsic epitaxial silicon layer and the doped polysilicon layer are coplanar; forming a dielectric isolation layer in the substrate; forming a dielectric layer on top of the isolation layer; and forming a first metal contact to the doped polysilicon layer through the dielectric layer and a second contact to the doped region the dielectric and through the isolation layer.

Abstract: An electrical structure and method comprising a first substrate electrically and mechanically connected to a second substrate. The first substrate comprises a first electrically conductive pad and a second electrically conductive pad. The second substrate comprises a third electrically conductive pad, a fourth electrically conductive pad, and a first electrically conductive member. The fourth electrically conductive pad comprises a height that is different than a height of the first electrically conductive member. The electrically conductive member is electrically and mechanically connected to the fourth electrically conductive pad. A first solder ball connects the first electrically conductive pad to the third electrically conductive pad. The first solder ball comprises a first diameter. A second solder ball connects the second electrically conductive pad to the first electrically conductive member. The second solder ball comprises a second diameter. The first diameter is greater than said second diameter.

Abstract: A test baseplate is configured to support and expose at least one storage device component to particle evacuation and particle analysis. The test baseplate includes a base having an upper surface that extends between an outer peripheral wall and an inner peripheral wall and having a lower surface defined by the inner peripheral wall. The test baseplate also includes a top clamp configured to be fastened to the upper surface of the base to secure the at least one storage device component to the base.

Abstract: Methods for the production of ammonium sulfate nitrate include (a) providing at a temperature of less than about 175° C. a melt including ammonium nitrate, ammonium sulfate, and water and the water content is greater than about 2 wt % based on the total weight of ammonium nitrate, ammonium sulfate and water in the melt, and (b) solidifying from the melt 1:2 ANS double salt by cooling at least a portion of the melt at a rate of less than about 100° C./min.

Abstract: A PCM cell structure comprises a first electrode, a phase change element, and a second electrode, wherein the phase change element is inserted in between the first electrode and the second electrode and only the peripheral edge of the first electrode contacts the phase change element thereby reducing the contact area between the phase change element and the first electrode and thereby increasing the current density through the phase change element and effectively inducing the phase change at lower levels of current and reduced programming power.

Abstract: Sensors on the integrated circuit are used to detect the current operating state of the chip, such as frequency, voltage, temperature characteristics, or variation in the integrated circuit manufacturing process. In response, the integrated circuit may choose to modify operational parameters (such as frequency, voltage, or power-down states) in order to dynamically and autonomously maintain an optimal performance and/or power-efficiency operational point.

Abstract: A semiconductor structure and a method for forming the same. The semiconductor structure includes a semiconductor substrate. The semiconductor structure further includes an electrically insulating region on top of the semiconductor substrate. The semiconductor structure further includes a first semiconductor region on top of and in direct physical contact with the semiconductor substrate. The semiconductor structure further includes a second semiconductor region on top of the insulating region. The semiconductor structure further includes a capacitor in the first semiconductor region and the semiconductor substrate. The semiconductor structure further includes a capacitor electrode contact in the second semiconductor region and the electrically insulating region.

Abstract: A conduit enclosure system for enclosing an engine wiring harness includes a conduit manifold configured to removably enclose a manifold portion of the engine wiring harness, the conduit manifold having a manifold outlet for each corresponding harness branch of a plurality of harness branches of the engine wiring harness. The conduit enclosure system also includes a conduit branch for each corresponding harness branch, the conduit branch being configured to removably lengthwise enclose each corresponding harness branch. The conduit branch has a first branch end and a second branch end, the first branch end being coupled to a corresponding manifold outlet, and the second branch end being coupled to the exposed portion of a corresponding control component of the plurality of control components in sealing engagement for sealing the exposed portion.

Abstract: A conduit enclosure system for enclosing an engine wiring harness includes a conduit manifold configured to removably enclose a manifold portion of the engine wiring harness, the conduit manifold having a manifold outlet for each corresponding harness branch of a plurality of harness branches of the engine wiring harness. The conduit enclosure system also includes a conduit branch for each corresponding harness branch, the conduit branch being configured to removably lengthwise enclose each corresponding harness branch. The conduit branch has a first branch end and a second branch end, the first branch end being coupled to a corresponding manifold outlet, and the second branch end being coupled to the exposed portion of a corresponding control component of the plurality of control components in sealing engagement for sealing the exposed portion.

Abstract: A lifting apparatus for raising and lowering a vessel such as personal watercraft, jet skis, inflatables may be mounted to a transom on boats, to bulkheads and to docks for raising and lowering vessels. A single actuator is used for raising and lowering a cradle that supports the vessel. An arm driven by the actuator is pivotally mounted to a mounting bracket and is extendable to different lengths. The cradle includes a self-leveling carriage that may use rollers to roll on a curved surface of the cradle allowing the supported watercraft to remain in a substantially level position thereon. An adjustable swivel mount is used to adjust the cradle to a desired horizontal orientation.

Abstract: Structures and methods for forming the same. A semiconductor fabrication method comprises a step of providing a semiconductor structure. The semiconductor structure includes a semiconductor substrate and a capacitor electrode on the semiconductor substrate. The capacitor electrode comprises dopants, and is electrically insulated from the semiconductor substrate by a capacitor dielectric layer. The semiconductor structure further includes a semiconductor layer on the semiconductor substrate. The semiconductor layer comprises a trench which partially but not completely overlaps the capacitor electrode. The method further comprises the step of causing some of the dopants of the capacitor electrode to diffuse into the semiconductor layer, resulting in a doped source/drain region. The doped source/drain region overlaps the capacitor electrode and abuts a sidewall of the trench.

Abstract: A semiconductor structure and a method for forming the same. The semiconductor structure includes a semiconductor substrate. The semiconductor structure further includes an electrically insulating region on top of the semiconductor substrate. The semiconductor structure further includes a first semiconductor region on top of and in direct physical contact with the semiconductor substrate. The semiconductor structure further includes a second semiconductor region on top of the insulating region. The semiconductor structure further includes a capacitor in the first semiconductor region and the semiconductor substrate. The semiconductor structure further includes a capacitor electrode contact in the second semiconductor region and the electrically insulating region.