Patents by Inventor Carsten Ahrens

Carsten Ahrens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11233493
    Abstract: Methods for manufacturing resonator structures and corresponding resonator structures are described. A first wafer including a first piezoelectric material is singulated and bonded to a second wafer.
    Type: Grant
    Filed: March 23, 2018
    Date of Patent: January 25, 2022
    Assignee: Infineon Technologies AG
    Inventors: Hans-Joerg Timme, Carsten Ahrens, Ruediger Bauder
  • Publication number: 20220009771
    Abstract: A method for providing a semiconductor layer arrangement on a substrate which comprises providing a semiconductor layer arrangement having a functional layer and a semiconductor substrate layer, attaching the semiconductor layer arrangement to a glass substrate layer such that the functional layer is arranged between the glass substrate layer and the semiconductor substrate layer, and removing the semiconductor substrate layer at least partially such that the glass substrate layer substitutes the semiconductor substrate layer as the substrate of the semiconductor layer arrangement.
    Type: Application
    Filed: June 24, 2021
    Publication date: January 13, 2022
    Inventors: Stephan Pindl, Carsten Ahrens, Stefan Jost, Ulrich Krumbein
  • Publication number: 20210246016
    Abstract: An infrared emitter with a glass lid for emitting infrared radiation comprises a package enclosing a cavity, wherein a first part is transparent for infrared radiation and a second part comprises a glass material and a heating structure configured for emitting the infrared radiation, wherein the heating structure is arranged in the cavity between the first part and the second part of the package.
    Type: Application
    Filed: January 15, 2021
    Publication date: August 12, 2021
    Inventors: Stephan Pindl, Carsten Ahrens, Stefan Jost, Ulrich Krumbein, Matthias Reinwald
  • Publication number: 20210057528
    Abstract: A semiconductor device includes a composite layer having a first and second opposing surfaces. The composite layer includes a mesa and a first insulating layer. The mesa has top and bottom surfaces and side faces. The side faces are embedded in the first insulating layer. The mesa includes a Group III nitride-based multilayer structure providing a Group III nitride based device having first and second electrodes arranged on the mesa top surface. First and second outer contacts are positioned on the second surface of the composite layer. A first conductive via extends through the first insulating layer and is electrically coupled to the first electrode on the mesa top surface and to the first outer contact. A second conductive via extends through the first insulating layer and is electrically coupled to the second electrode on the mesa top surface and to the second outer contact.
    Type: Application
    Filed: August 20, 2020
    Publication date: February 25, 2021
    Inventors: Helmut Brech, Carsten Ahrens, Matthias Zigldrum
  • Patent number: 10916515
    Abstract: A device is disclosed that includes a wafer/chip, a first layer, a first device, an isolation mold and a second device. The first layer is formed over the chip and has non-isolating characteristics. The first device is formed over the first layer. In one example, it is formed only over the first layer. The isolation mold is formed over the chip. The isolation mold has isolating characteristics. The second device is formed substantially over the isolation mold.
    Type: Grant
    Filed: June 28, 2019
    Date of Patent: February 9, 2021
    Assignee: Infineon Technologies AG
    Inventors: Carsten Ahrens, Anton Steltenpohl, Edward Fuergut, Anneliese Mueller
  • Patent number: 10829368
    Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.
    Type: Grant
    Filed: July 11, 2019
    Date of Patent: November 10, 2020
    Assignee: Infineon Technologies AG
    Inventors: Alfons Dehe, Stephan Pindl, Bernhard Knott, Carsten Ahrens
  • Patent number: 10734987
    Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.
    Type: Grant
    Filed: July 9, 2019
    Date of Patent: August 4, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Valentyn Solomko, Carsten Ahrens, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher
  • Patent number: 10629575
    Abstract: A semiconductor chip assembly includes first and second semiconductor dies that each include opposite facing upper and lower sides and an outer edge side, and an electrical interposer having opposite facing first and second conductive surfaces and a conductive connection between the conductive surfaces. The second semiconductor die is mounted on top of the first semiconductor die and the interposer such that the lower side of the second semiconductor die faces the first semiconductor die and the interposer, a first lateral section of the second semiconductor die at least partially covers the upper side of the first semiconductor die, and a second lateral section of the second semiconductor die extends past the outer edge side of the first semiconductor die. The first conductive surface is electrically connected to a first terminal that is disposed on a lower side of the second semiconductor die.
    Type: Grant
    Filed: December 13, 2018
    Date of Patent: April 21, 2020
    Assignee: Infineon Techologies AG
    Inventors: Thorsten Scharf, Carsten Ahrens, Helmut Brech, Martin Gruber, Thorsten Meyer, Matthias Zigldrum
  • Patent number: 10575101
    Abstract: A microelectromechanical microphone includes a reference electrode, a first membrane arranged on a first side of the reference electrode and displaceable by sound to be detected, and a second membrane arranged on a second side of the reference electrode, said second side being situated opposite the first side of the reference electrode, and displaceable by sound to be detected. A region of one from the first and second membranes that is displaceable by sound relative to the reference electrode, independently of said region's position relative to the reference electrode, can comprise a planar section and also an undulatory section adjoining the planar section and arranged in a region of overlap one of the first membrane or the second membrane with the other one of the first membrane and or the second membrane.
    Type: Grant
    Filed: February 15, 2018
    Date of Patent: February 25, 2020
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Arnaud Walther, Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser, Carsten Ahrens
  • Publication number: 20200028504
    Abstract: A radio frequency, RF, switch device includes a plurality of switch units, wherein the switch units are coupled in series between a first series terminal and a second series terminal to establish a switchable RF path; and a plurality of ballasting capacitor units, wherein each ballasting capacitor unit is coupled in parallel to a respective switch unit, to provide a selectable capacitance in parallel to a signal path of the respective switch unit, wherein each ballasting capacitor unit includes at least one ballasting capacitor switch element to switch the capacitance of the ballasting capacitor unit between a first capacitance value and a second capacitance value, wherein the second capacitance value is larger than the first capacitance value.
    Type: Application
    Filed: July 9, 2019
    Publication date: January 23, 2020
    Inventors: Valentyn Solomko, Carsten Ahrens, Winfried Bakalski, Andrea Cattaneo, Bernd Schleicher
  • Publication number: 20200006262
    Abstract: A device is disclosed that includes a wafer/chip, a first layer, a first device, an isolation mold and a second device. The first layer is formed over the chip and has non-isolating characteristics. The first device is formed over the first layer. In one example, it is formed only over the first layer. The isolation mold is formed over the chip. The isolation mold has isolating characteristics. The second device is formed substantially over the isolation mold.
    Type: Application
    Filed: June 28, 2019
    Publication date: January 2, 2020
    Inventors: Carsten Ahrens, Anton Steltenpohl, Edward Fuergut, Anneliese Mueller
  • Patent number: 10504772
    Abstract: In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.
    Type: Grant
    Filed: June 22, 2017
    Date of Patent: December 10, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Alfons Dehe, Damian Sojka, Andre Schmenn, Carsten Ahrens
  • Publication number: 20190330057
    Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.
    Type: Application
    Filed: July 11, 2019
    Publication date: October 31, 2019
    Inventors: Alfons Dehe, Stephan Pindl, Bernhard Knott, Carsten Ahrens
  • Patent number: 10384934
    Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.
    Type: Grant
    Filed: March 16, 2018
    Date of Patent: August 20, 2019
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Alfons Dehe, Stephan Pindl, Bernhard Knott, Carsten Ahrens
  • Patent number: 10153266
    Abstract: According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.
    Type: Grant
    Filed: September 22, 2016
    Date of Patent: December 11, 2018
    Assignee: Infineon Technologies AG
    Inventors: Thomas Fischer, Carsten Ahrens, Damian Sojka, Andre Schmenn
  • Patent number: 10128204
    Abstract: In accordance with an embodiment, an RF module includes a bulk semiconductor substrate with at least one integrated RF component integrated in a first main surface region of the bulk semiconductor substrate; an insulator structure surrounding a side surface region of the bulk semiconductor substrate; a wiring layer stack including at least one structured metallization layer embedded into an insulation material, the wiring layer stack being arranged on the first main surface region of the bulk semiconductor substrate and a first main surface region of the insulator structure; and a carrier structure at a second main surface region of the insulator structure, wherein the carrier structure and the insulator structure include different materials.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: November 13, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Carsten Ahrens, Katharina Umminger, Carsten von Koblinski
  • Publication number: 20180294790
    Abstract: Methods for manufacturing resonator structures and corresponding resonator structures are described. A first wafer including a first piezoelectric material is singulated and bonded to a second wafer.
    Type: Application
    Filed: March 23, 2018
    Publication date: October 11, 2018
    Inventors: Hans-Joerg Timme, Carsten Ahrens, Ruediger Bauder
  • Publication number: 20180234774
    Abstract: A microelectromechanical microphone includes a reference electrode, a first membrane arranged on a first side of the reference electrode and displaceable by sound to be detected, and a second membrane arranged on a second side of the reference electrode, said second side being situated opposite the first side of the reference electrode, and displaceable by sound to be detected. A region of one from the first and second membranes that is displaceable by sound relative to the reference electrode, independently of said region's position relative to the reference electrode, can comprise a planar section and also an undulatory section adjoining the planar section and arranged in a region of overlap one of the first membrane or the second membrane with the other one of the first membrane and or the second membrane.
    Type: Application
    Filed: February 15, 2018
    Publication date: August 16, 2018
    Inventors: Arnaud Walther, Alfons Dehe, Gerhard Metzger-Brueckl, Johann Strasser, Carsten Ahrens
  • Publication number: 20180201504
    Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.
    Type: Application
    Filed: March 16, 2018
    Publication date: July 19, 2018
    Inventors: Alfons Dehe, Stephan Pindl, Bernhard Knott, Carsten Ahrens
  • Patent number: 10008318
    Abstract: In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.
    Type: Grant
    Filed: September 2, 2016
    Date of Patent: June 26, 2018
    Assignee: INFINEON TECHNOLOGIES AG
    Inventors: Gunther Mackh, Carsten Ahrens, Klemens Pruegl