Abstract: Methods for manufacturing resonator structures and corresponding resonator structures are described. A first wafer including a first piezoelectric material is singulated and bonded to a second wafer.

Abstract: A microelectromechanical microphone includes a reference electrode, a first membrane arranged on a first side of the reference electrode and displaceable by sound to be detected, and a second membrane arranged on a second side of the reference electrode, said second side being situated opposite the first side of the reference electrode, and displaceable by sound to be detected. A region of one from the first and second membranes that is displaceable by sound relative to the reference electrode, independently of said region's position relative to the reference electrode, can comprise a planar section and also an undulatory section adjoining the planar section and arranged in a region of overlap one of the first membrane or the second membrane with the other one of the first membrane and or the second membrane.

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack over a first main surface of a substrate, forming a polymer layer over a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

Abstract: In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.

Abstract: An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.

Abstract: In accordance with an embodiment, an RF module includes a bulk semiconductor substrate with at least one integrated RF component integrated in a first main surface region of the bulk semiconductor substrate; an insulator structure surrounding a side surface region of the bulk semiconductor substrate; a wiring layer stack including at least one structured metallization layer embedded into an insulation material, the wiring layer stack being arranged on the first main surface region of the bulk semiconductor substrate and a first main surface region of the insulator structure; and a carrier structure at a second main surface region of the insulator structure, wherein the carrier structure and the insulator structure include different materials.

Abstract: A method and a system are provided for providing a subscription profile on a mobile terminal for communication via a mobile communication network. The method comprises the following steps: the logging in of a first mobile terminal with a first subscription profile to a mobile communication network; the downloading of a second subscription profile to the first mobile terminal via the mobile communication network; and the forwarding of the second subscription profile from the first mobile terminal to a second mobile terminal via a communication channel.

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

Abstract: In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

Abstract: A method and a system are provided for providing a subscription profile on a mobile terminal for communication via a mobile communication network. The method comprises the following steps: the logging in of a first mobile terminal with a first subscription profile to a mobile communication network; the downloading of a second subscription profile to the first mobile terminal via the mobile communication network; and the forwarding of the second subscription profile from the first mobile terminal to a second mobile terminal via a communication channel.

Abstract: In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

Abstract: An arrangement is provided. The arrangement may include: a substrate having a front side and a back side, a die region within the substrate, a multi-purpose layer defining a back side of the die region, and an etch stop layer disposed over the multi-purpose layer between the multi-purpose layer and the back side of the substrate. The multi-purpose layer may be formed of an ohmic material, and the etch stop layer may be of a first conductivity type of a first doping concentration.

Abstract: According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.

Abstract: A method of manufacturing a semiconductor device includes: forming a porous area at a surface of a semiconductor body; forming a semiconductor layer on the porous area by epitaxial growth; forming semiconductor regions including source, drain, body, emitter, base and/or collector regions in a front surface of the semiconductor layer, wherein the front surface of the semiconductor layer corresponds to a front side of the semiconductor device; introducing, after forming the semiconductor regions, hydrogen into the porous area by a thermal treatment, wherein the semiconductor layer with the semiconductor regions is separated from the semiconductor body along the porous area; and applying, after separation of the semiconductor layer, rear side processing to the semiconductor layer, wherein a rear side of the semiconductor layer corresponds to a rear side of the semiconductor device.

Abstract: In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.

Abstract: According to various embodiments, a method for manufacturing a semiconductor device may include providing a semiconductor workpiece including a device region at a first side of the semiconductor workpiece, wherein a mechanical stability of the semiconductor workpiece is insufficient to resist at least one back end process without damage, and depositing at least one conductive layer over a second side of the semiconductor workpiece opposite the first side of the semiconductor workpiece, wherein the at least one conductive layer increases the mechanical stability of the semiconductor workpiece to be sufficient to resist the at least one back end process without damage.

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.

Abstract: A semiconductor device is manufactured by forming semiconductor elements extending between a front surface and a rear side of a semiconductor layer. This includes forming a porous area at a surface of a semiconductor body that includes a porous structure in the porous area, forming the semiconductor layer on the porous area by epitaxial growth so as to have a thickness in a range of 5 ?m to 200 ?m, and forming semiconductor regions including source, drain, body, emitter, base and/or collector regions in a front surface of the semiconductor layer by ion implantation. After forming the semiconductor regions, hydrogen is introduced into the porous area by a thermal treatment, activating a reallocation of pores and causing cavities to be generated. The semiconductor layer is separated from the semiconductor body along the porous area. After the separation, rear side processing is applied to the semiconductor layer.

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.