Abstract: A method of manufacturing a semiconductor device includes forming a porous area of a semiconductor body. The semiconductor body includes a porous structure in the porous area. A semiconductor layer is formed on the porous area. Semiconductor regions are formed in the semiconductor layer. Then, the semiconductor layer is separated from the semiconductor body along the porous area, including introducing hydrogen into the porous area by a thermal treatment.

Abstract: A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate.

Abstract: In accordance with an embodiment of the present invention, a method of forming a semiconductor device includes forming a sacrificial layer over a first surface of a workpiece having the first surface and an opposite second surface. A membrane is formed over the sacrificial layer. A through hole is etched through the workpiece from the second surface to expose a surface of the sacrificial layer. At least a portion of the sacrificial layer is removed from the second surface to form a cavity under the membrane. The cavity is aligned with the membrane.

Abstract: A semiconductor device with a buried electrode is manufactured by forming a cavity within a semiconductor substrate, forming an active device region in an epitaxial layer disposed on the semiconductor substrate and forming the buried electrode below the active device region in the cavity. The buried electrode is formed from an electrically conductive material different than the material of the semiconductor substrate.

Abstract: A method for producing a protective structure may include: providing a semiconductor base substrate with a doping of a first conductivity type; producing a first epitaxial layer on the substrate; implanting a dopant of a second conductivity type in a delimited implantation region of the first epitaxial layer; applying a second epitaxial layer with a doping of the second conductivity type on the first epitaxial layer; forming an insulation zone in the second epitaxial layer, such that the second epitaxial layer is subdivided into first and second regions; producing a first dopant zone with a doping of the first conductivity type in the first region above the implantation region; producing a second dopant zone with a doping of the second conductivity type in the second region; outdiffusing the dopant from the implantation region to form a buried layer at the junction between the first epitaxial layer and the first region.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.

Abstract: A protective structure may include: a semiconductor substrate having a doping of a first conductivity type; a semiconductor layer having a doping of a second conductivity type arranged at a surface of the semiconductor substrate; a buried layer having a doping of the second conductivity type arranged in a first region of the semiconductor layer and at the junction between the semiconductor layer and the semiconductor substrate; a first dopant zone having a doping of the first conductivity type arranged in the first region of the semiconductor layer above the buried layer; a second dopant zone having a doping of the second conductivity type arranged in a second region of the semiconductor layer; an electrical insulation arranged between the first region and the second region of the semiconductor layer; and a common connection device for the first dopant zone and the second dopant zone.

Abstract: A method for producing a connection region on a side wall of a semiconductor body is disclosed. A first trench is produced on a first surface of a semiconductor body and extends into the semiconductor body. An insulation layer is formed on the side walls and on the bottom of the first trench, and the first trench is only partially filled. The unfilled part of the first trench is filled with an electrically conductive material. A separating trench is produced along the first trench in such a way that a side wall of the separating trench directly adjoins the first trench. The part of the insulation layer which adjoins the separating trench is at least partially removed, with the result that at least some of the electrically conductive material in the first trench is exposed.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.

Abstract: A method for manufacturing a MEMS device is disclosed. Moreover a MEMS device and a module including a MEMS device are disclosed. An embodiment includes a method for manufacturing MEMS devices includes forming a MEMS stack on a first main surface of a substrate, forming a polymer layer on a second main surface of the substrate and forming a first opening in the polymer layer and the substrate such that the first opening abuts the MEMS stack.

Abstract: A semiconductor package includes a semiconductor chip, an inductor applied to the semiconductor chip. The inductor includes at least one winding. A space within the at least one winding is filled with a magnetic material.

Abstract: Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.

Abstract: In one embodiment of the present invention, an electronic device includes a first emitter/collector region and a second emitter/collector region disposed in a substrate. The first emitter/collector region has a first edge/tip, and the second emitter/collector region has a second edge/tip. A gap separates the first edge/tip from the second edge/tip. The first emitter/collector region, the second emitter/collector region, and the gap form a field emission device.

Abstract: A protective structure may include: a semiconductor substrate having a doping of a first conductivity type; a semiconductor layer having a doping of a second conductivity type arranged at a surface of the semiconductor substrate; a buried layer having a doping of the second conductivity type arranged in a first region of the semiconductor layer and at the junction between the semiconductor layer and the semiconductor substrate; a first dopant zone having a doping of the first conductivity type arranged in the first region of the semiconductor layer above the buried layer; a second dopant zone having a doping of the second conductivity type arranged in a second region of the semiconductor layer; an electrical insulation arranged between the first region and the second region of the semiconductor layer; and a common connection device for the first dopant zone and the second dopant zone.

Abstract: Embodiments show a method for fabricating a cavity structure, a semiconductor structure, a cavity structure for a semiconductor device and a semiconductor microphone fabricated by the same. In some embodiments the method for fabricating a cavity structure comprises providing a first layer, depositing a carbon layer on the first layer, covering at least partially the carbon layer with a second layer to define the cavity structure, removing by means of dry etching the carbon layer between the first and second layer so that the cavity structure is formed.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.

Abstract: In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.

Abstract: A protective structure is produced by providing a semiconductor substrate having doping of a first conductivity type. A semiconductor layer having doping of a second conductivity type is applied at a surface of the semiconductor substrate. A buried layer with doping of a second conductivity type is formed in a first region of the semiconductor layer, producing a layer at the junction between the semiconductor layer and semiconductor substrate. A first dopant zone having doping of a first conductivity type is formed in the first region of the semiconductor layer above the buried layer. A second dopant zone having doping of a second conductivity type is formed in a second region of the semiconductor layer. An electrical insulation is formed between the first and second regions of the semiconductor layer. A common connection device is formed for the first and second dopant zones.

Abstract: In one embodiment, a method of forming a semiconductor device includes forming a first inductor coil within and/or over a substrate. The first inductor coil is formed adjacent a top side of the substrate. First trenches are formed within the substrate adjacent the first inductor coil. The first trenches are filled at least partially with a magnetic fill material. At least a first portion of the substrate underlying the first inductor coil is thinned. A backside magnetic layer is formed under the first portion of the substrate. The backside magnetic layer and the magnetic fill material form at least a part of a magnetic core region of the first inductor coil.

Abstract: In one embodiment, an inductor has a substrate, a conductor disposed above the substrate and a seamless ferromagnetic material surrounding at least a first portion of the conductor.