Patents by Inventor Caterina Riva
Caterina Riva has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11737369Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.Type: GrantFiled: June 9, 2021Date of Patent: August 22, 2023Assignee: STMicroelectronics S.r.l.Inventors: Dario Paci, Marco Morelli, Caterina Riva
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Publication number: 20210296578Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.Type: ApplicationFiled: June 9, 2021Publication date: September 23, 2021Applicant: STMicroelectronics S.r.l.Inventors: Dario PACI, Marco MORELLI, Caterina RIVA
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Patent number: 11063211Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.Type: GrantFiled: November 27, 2018Date of Patent: July 13, 2021Assignee: STMicroelectronics S.r.l.Inventors: Dario Paci, Marco Morelli, Caterina Riva
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Publication number: 20190097127Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.Type: ApplicationFiled: November 27, 2018Publication date: March 28, 2019Applicant: STMicroelectronics S.r.l.Inventors: Dario Paci, Marco Morelli, Caterina Riva
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Patent number: 10221066Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.Type: GrantFiled: July 26, 2016Date of Patent: March 5, 2019Assignee: STMICROELECTRONICS S.R.L.Inventors: Giuseppe Barillaro, Alessandro Diligenti, Caterina Riva, Roberto Campedelli, Stefano Losa
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Patent number: 10196262Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity (P) and a top surface; forming a first interaction region having a second type of conductivity (N), opposite to the first type of conductivity (P), in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity (N), so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.Type: GrantFiled: December 18, 2007Date of Patent: February 5, 2019Assignee: STMICROELECTRONICS S.R.L.Inventors: Giuseppe Barillaro, Alessandro Diligenti, Caterina Riva, Roberto Campedelli, Stefano Losa
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Patent number: 10177306Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.Type: GrantFiled: November 11, 2015Date of Patent: January 8, 2019Assignee: STMicroelectronics S.r.l.Inventors: Dario Paci, Marco Morelli, Caterina Riva
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Publication number: 20160332871Abstract: A process for manufacturing an interaction system of a microelectromechanical type for a storage medium, the interaction system provided with a supporting element and an interaction element carried by the supporting element, envisages the steps of: providing a wafer of semiconductor material having a substrate with a first type of conductivity and a top surface; forming a first interaction region having a second type of conductivity, opposite to the first type of conductivity, in a surface portion of the substrate in the proximity of the top surface; and carrying out an electrochemical etch of the substrate starting from the top surface, the etching being selective with respect to the second type of conductivity, so as to remove the surface portion of the substrate and separate the first interaction region from the substrate, thus forming the supporting element.Type: ApplicationFiled: July 26, 2016Publication date: November 17, 2016Inventors: Giuseppe Barillaro, Alessandro Diligenti, Caterina Riva, Roberto Campedelli, Stefano Losa
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Patent number: 9442168Abstract: An integrated magnetoresistive device, where a substrate of semiconductor material is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material including at least one arm, extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor. In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.Type: GrantFiled: December 23, 2011Date of Patent: September 13, 2016Assignee: STMicroelectronics S.r.l.Inventors: Dario Paci, Marco Morelli, Caterina Riva
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Publication number: 20160072057Abstract: An integrated magnetoresistive device includes a substrate of semiconductor material that is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends within the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material includes at least one arm that extends in a transversal direction to the sensitivity plane and is vertically offset from the magnetoresistor. The concentrator concentrates deflects magnetic flux lines perpendicular to the sensitivity plane so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.Type: ApplicationFiled: November 11, 2015Publication date: March 10, 2016Applicant: STMICROELECTRONICS S.R.L.Inventors: Dario Paci, Marco Morelli, Caterina Riva
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Patent number: 8736262Abstract: An integrated magnetic sensor formed in a body including a substrate of semiconductor material, which integrates a Hall cell. A trench is formed in the body, for example, on the back of the substrate, and is delimited by lateral surface portions that extend in a direction transverse to the main face of the body. The trench has a depth in a direction perpendicular to the main face that is much greater than its width in a direction parallel to the main face of the body, between the lateral surface portions. A concentrator made of ferromagnetic material is formed within the trench and is constituted by two ferromagnetic regions, which are set at a distance apart from one another and extend along the lateral surface portions of the trench towards the first Hall cell.Type: GrantFiled: February 4, 2011Date of Patent: May 27, 2014Assignee: STMicroelectronics S.r.l.Inventors: Dario Paci, Caterina Riva, Marco Morelli
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Patent number: 8633688Abstract: The integrated magnetic sensor for detecting an external magnetic field, is formed by a body of semiconductor material having a surface; an insulating layer covering the body of semiconductor material; a magnetically sensitive region, for example a Hall cell, extending inside the body; and a concentrator of ferromagnetic material, extending on the Hall cell and having a planar portion extending parallel to the surface of the substrate on the insulating layer. The concentrator terminates with a tip protruding peripherally from, and transversely to, the planar portion toward the Hall cell. When the magnetically sensitive region is a sensing coil of a fluxgate sensor, it is formed on the substrate, embedded in the insulating layer, and the tip of the concentrator can reach as far as the sensing coil.Type: GrantFiled: November 30, 2010Date of Patent: January 21, 2014Assignee: STMicroelectronics S.r.l.Inventors: Dario Paci, Paolo Iuliano, Caterina Riva, Marco Morelli
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Publication number: 20130299930Abstract: An integrated magnetoresistive device, where a substrate of semiconductor material is covered, on a first surface, by an insulating layer. A magnetoresistor of ferromagnetic material extends in the insulating layer and defines a sensitivity plane of the sensor. A concentrator of ferromagnetic material including at least one arm, extending in a transversal direction to the sensitivity plane and vertically offset to the magnetoresistor. In this way, magnetic flux lines directed perpendicularly to the sensitivity plane are concentrated and deflected so as to generate magnetic-field components directed in a parallel direction to the sensitivity plane.Type: ApplicationFiled: December 23, 2011Publication date: November 14, 2013Applicant: STMicroelectronics S.r.l.Inventors: Dario Paci, Marco Morelli, Caterina Riva
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Publication number: 20130001719Abstract: A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm.Type: ApplicationFiled: September 12, 2012Publication date: January 3, 2013Applicant: STMICROELECTRONICS S.R.L.Inventors: Caterina Riva, Bruno Murari, Giovanni Frattini
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Patent number: 8287746Abstract: A process manufactures an interaction structure for a storage medium. The process includes forming a first interaction head provided with a first conductive region having a sub-lithographic dimension. The step of forming a first interaction head includes: forming on a surface a first delimitation region having a side wall; depositing a conductive portion having a deposition thickness substantially matching the sub-lithographic dimension on the side wall; and then defining the conductive portion. The sub-lithographic dimension preferably is between 1 and 50 nm, more preferably 20 nm.Type: GrantFiled: October 6, 2008Date of Patent: October 16, 2012Assignee: STMicroelectronics S.r.l.Inventors: Caterina Riva, Bruno Murari, Giovanni Frattini
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Patent number: 8049287Abstract: A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.Type: GrantFiled: April 14, 2008Date of Patent: November 1, 2011Assignee: STMicroelectronics S.r.l.Inventors: Chantal Combi, Benedetto Vigna, Federico Giovanni Ziglioli, Lorenzo Baldo, Manuela Magugliani, Ernesto Lasalandra, Caterina Riva
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Publication number: 20110210722Abstract: The integrated magnetic sensor for detecting an external magnetic field, is formed by a body of semiconductor material having a surface; an insulating layer covering the body of semiconductor material; a magnetically sensitive region, for example a Hall cell, extending inside the body; and a concentrator of ferromagnetic material, extending on the Hall cell and having a planar portion extending parallel to the surface of the substrate on the insulating layer. The concentrator terminates with a tip protruding peripherally from, and transversely to, the planar portion toward the Hall cell. When the magnetically sensitive region is a sensing coil of a fluxgate sensor, it is formed on the substrate, embedded in the insulating layer, and the tip of the concentrator can reach as far as the sensing coil.Type: ApplicationFiled: November 30, 2010Publication date: September 1, 2011Applicant: STMICROELECTRONICS S.R.L.Inventors: Dario Paci, Paolo Iuliano, Caterina Riva, Marco Morelli
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Publication number: 20110193556Abstract: An integrated magnetic sensor formed in a body including a substrate of semiconductor material, which integrates a Hall cell. A trench is formed in the body, for example, on the back of the substrate, and is delimited by lateral surface portions that extend in a direction transverse to the main face of the body. The trench has a depth in a direction perpendicular to the main face that is much greater than its width in a direction parallel to the main face of the body, between the lateral surface portions. A concentrator made of ferromagnetic material is formed within the trench and is constituted by two ferromagnetic regions, which are set at a distance apart from one another and extend along the lateral surface portions of the trench towards the first Hall cell.Type: ApplicationFiled: February 4, 2011Publication date: August 11, 2011Applicant: STMicroelectronics S.r.I.Inventors: Dario Paci, Caterina Riva, Marco Morelli
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Patent number: 7800234Abstract: A process for manufacturing a through via in a semiconductor device includes the steps of: forming a body having a structural layer, a substrate, and a dielectric layer set between the structural layer and the substrate; insulating a portion of the structural layer to form a front-side interconnection region; insulating a portion of the substrate to form a back-side interconnection region; and connecting the front-side interconnection region and the back-side interconnection region through the dielectric layer.Type: GrantFiled: November 16, 2006Date of Patent: September 21, 2010Assignee: STMicroelectronics S.r.l.Inventors: Mauro Marchi, Marco Ferrera, Caterina Riva
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Patent number: RE46671Abstract: A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.Type: GrantFiled: October 31, 2013Date of Patent: January 16, 2018Assignee: STMicroelectronics S.r.l.Inventors: Chantal Combi, Benedetto Vigna, Federico Giovanni Ziglioli, Lorenzo Baldo, Manuela Magugliani, Ernesto Lasalandra, Caterina Riva