Abstract: A method for inhibiting the formation of carbonyl compounds in a gas cylinder containing carbon monoxide wherein the gas cylinder is in fluid communication with a valve assembly wherein the valve assembly connects to a threaded opening in the gas cylinder by a threaded assembly by coating interior and exterior components of the valve assembly selected from the group consisting of an inlet port, an outlet port, a diaphragm and a lower spindle with an amorphous hydrogenated silicon compound. A valve assembly containing the coated interior and exterior components is also disclosed.

Abstract: Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Abstract: Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Abstract: Methods for selectively etching SiGe relative to Si are provided. Some of the methods incorporate formation of a passivation layer on a surface of the Si layer to enhance SiGe etchant selectivity and the use of interhalogen gases that preferentially etch the SiGe as opposed to the Si in the presence of the passivation layer. The methods can occur in a cyclic manner until the desired thickness of the SiGe layer is obtained.

Abstract: Novel methods for pretreating a rare-gas-containing stream exiting an etch chamber followed by recovering the rare gas from the pre-treated, rare-gas containing stream are disclosed. More particularly, the invention relates to the pretreatment and recovery of a rare gas, such as xenon or krypton, from a nitrogen-based exhaust stream with specific gaseous impurities generated during an etch process that is performed as part of a semiconductor fabrication process.

Abstract: Systems and processes for gas phase-phase synthesis of trisilylamine. One system includes a reactor vessel having a top, bottom, and sidewall having an inner surface. The reactor vessel includes inlets for gaseous reactants, and a gas inlet for an inert gas. In certain reactors the gas inlets are positioned near the top of the reactor vessel and configured to inject the reactant gases in the reactor substantially vertically and downward therefrom. Other reactors are cyclonic-shaped with tangential feeding of the gases. One or more baffles having a peripheral edge and substantially horizontally positioned in the reactor to define a reaction zone above the baffles and a separation zone below the baffles. The baffles are positioned in the reactor vessel such that there is a gap between the baffle peripheral edge and the inner surface of the reactor vessel. Certain systems and processes include mechanical or static mixers.

Abstract: A method for inhibiting the formation of carbonyl compounds in a gas cylinder containing carbon monoxide wherein the gas cylinder is in fluid communication with a valve assembly wherein the valve assembly connects to a threaded opening in the gas cylinder by a threaded assembly by coating interior and exterior components of the valve assembly selected from the group consisting of an inlet port, an outlet port, a diaphragm and a lower spindle with an amorphous hydrogenated silicon compound. A valve assembly containing the coated interior and exterior components is also disclosed.

Abstract: Systems and methods for the precise control of the delivery of solution-based precursors for use in ALD processes. By using direct liquid injection of the precursor solution to a local vaporizer, the vaporization of the solution-based precursors and delivery of the vaporized precursor can be precisely controlled in order to achieve true ALD film growth with a conversional ALD tool.

Abstract: Solution-based precursors for use as starting materials in film deposition processes, such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition. The solution-based precursors allow for the use of otherwise solid precursors that would be unsuitable for vapor phase deposition processes because of their tendency to decompose and solidify during vaporization.

Abstract: The present invention relates to the use of low-volatility compounds in forming deposited layers and to methods for accomplishing such deposition. Particular applicability is in the field of depositing layers for semiconductor devices. A solution made up of low vapor pressure solutes (source materials) and solvents, wherein the solvents have a vapor pressure several orders of magnitude lower than that of the solute is described. The solutions are introduced to a vaporization apparatus configured to enable rapid and efficient vaporization of the solute with minimum evaporation of solvent and minimum decomposition of solute.

Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.

Abstract: Precursor source containers to hold precursor materials used in thin film deposition processes, such as ALD and MOCVD methods are described. In particular, the container holds both a liquid precursor or a dissolved precursor solution and a rinse solvent in separate chambers, and reduces the overall space requirement. In one embodiment, a cylinder within a cylinder arrangement provides two separate chambers, one for the precursor solution and the other for the rinse solvent.

Abstract: Solution-based precursors for use as starting materials in film deposition processes, such as atomic layer deposition, chemical vapor deposition and metalorganic chemical vapor deposition. The solution-based precursors allow for the use of otherwise solid precursors that would be unsuitable for vapor phase deposition processes because of their tendency to decompose and solidify during vaporization.

Abstract: Processes for forming full graphene wafers on silicon or silicon-on-insulator substrates. The processes comprise formation of a metal carbide layer on the substrate and annealing of the metal carbide layer under high vacuum. For volatile metals, this annealing step results in volatilization of the metal species of the metal carbide layer and reformation of the carbon atoms into the desired graphene wafer. Alternatively, for non-volatile metals, the annealing step results in migration of the metal in the metal carbide layer to the top surface of the layer, thereby forming a metal rich top layer. The desired graphene layer is formed by the carbon atoms left at the interface with the metal rich top layer. The thickness of the graphene layer is controlled by the thickness of the metal carbide layer and by solid phase reactions.

Abstract: The present invention relates to the use of low-volatility compounds in forming deposited layers and to methods for accomplishing such deposition. Particular applicability is in the field of depositing layers for semiconductor devices. A solution made up of low vapor pressure solutes (source materials) and solvents, wherein the solvents have a vapor pressure several orders of magnitude lower than that of the solute is described. The solutions are introduced to a vaporization apparatus configured to enable rapid and efficient vaporization of the solute with minimum evaporation of solvent and minimum decomposition of solute.

Abstract: Processes for forming full graphene wafers on silicon or silicon-on-insulator substrates. The processes comprise formation of a metal carbide layer on the substrate and annealing of the metal carbide layer under high vacuum. For volatile metals, this annealing step results in volatilization of the metal species of the metal carbide layer and reformation of the carbon atoms into the desired graphene wafer. Alternatively, for non-volatile metals, the annealing step results in migration of the metal in the metal carbide layer to the top surface of the layer, thereby forming a metal rich top layer. The desired graphene layer is formed by the carbon atoms left at the interface with the metal rich top layer. The thickness of the graphene layer is controlled by the thickness of the metal carbide layer and by solid phase reactions.

Abstract: Oxygen free, solution based zirconium precursors for use in ALD processes are disclosed for growing ZrO2 or other Zr compound films in a self-limiting and conformal manner. An oxygen free, solution based ALD precursor of (t-BuCp)2ZrMC2 is particular useful for depositing ZrO2 or other Zr compound films.

Abstract: Oxygen free cyclopentadienyl solvent based precursor formulations having the general formula: (R1R2R3R4R5Cp)3*M wherein R1, R2, R3, R4, and R5 are H or hydrocarbon CnHm (n=1 to 10, m=1 to 2n+1), Cp is cyclopentadienyl and M is an element from the lanthanide series or Group III materials.

Abstract: Improved apparatus and methods for atomic layer deposition (ALD) are described—In particular, improved methods and apparatus for the vaporization and delivery of solution ALD precursors are provided. The present invention is particularly useful for processing lower volatile metal, metal oxide, metal nitride and other thin film precursors. The present invention uses total vaporization chambers and room temperature valve systems to generate true ALD vapor pulses while increasing utilization efficiency of the solution precursors.