Patents by Inventor Ce Ma

Ce Ma has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20100140120
    Abstract: Precursor source containers to hold precursor materials used in thin film deposition processes, such as ALD and MOCVD methods are described. In particular, the container holds both a liquid precursor or a dissolved precursor solution and a rinse solvent in separate chambers, and reduces the overall space requirement. In one embodiment, a cylinder within a cylinder arrangement provides two separate chambers, one for the precursor solution and the other for the rinse solvent.
    Type: Application
    Filed: December 5, 2008
    Publication date: June 10, 2010
    Inventor: Ce MA
  • Publication number: 20100055321
    Abstract: Stable ALD precursors that have at least one metal-nitrogen bond and a mixed ligand are presented. These ALD precursors exhibit self-limiting growth, at reduced deposition temperature and produce less contamination all with enhanced stability.
    Type: Application
    Filed: July 12, 2007
    Publication date: March 4, 2010
    Inventors: Ce Ma, Qing Min Wang
  • Publication number: 20100036144
    Abstract: Improved methods for performing atomic layer deposition (ALD) are described. These improved methods provide more complete saturation of the surface reactive sites and provides more complete monolayer surface coverage at each half-cycle of the ALD process. In one embodiment, operating parameters are fixed for a given solvent based precursor. In another embodiment, one operating parameter, e.g. chamber pressure is altered during the precursor deposition to assure full surface saturation.
    Type: Application
    Filed: July 12, 2007
    Publication date: February 11, 2010
    Inventors: Ce Ma, Graham McFarlane, Qing Min Wang, Patrick J. Helly
  • Publication number: 20090305504
    Abstract: Single precursors for use in flash ALD processes are disclosed. These precursors have the general formula: XmM(OR)n or XpM(O2R?)q where M is Hf, Zr, Ti, Al, or Ta; X is a ligand that can interact with surface hydroxyl sites; OR and O2R? are alkoxyl groups with R and R? containing two or more carbon atoms; m+n=3 to 5; p+2q=3 to 5; and m, n, p, q?0. Further precursors have the general formula: (R12N)mM(?NR2)n or (R3CN2R42)pM(?NR2)q where M is Hf, Zr, Ti, or Ta; R12N is an amino group with R1 containing two or more carbon atoms; NR2 is an imido group with R2 containing two or more carbon atoms; R3 and R4 are alkyl groups; m+2n=4 or 5; p+2q=4 or 5; and m, n, p, q?0. Flash ALD methods using these precursors are also described.
    Type: Application
    Filed: July 2, 2007
    Publication date: December 10, 2009
    Inventors: Ce Ma, Qing Min Wang
  • Publication number: 20090220374
    Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
    Type: Application
    Filed: March 3, 2009
    Publication date: September 3, 2009
    Inventors: Ce MA, Qing Min WANG, Patrick J. HELLY, Richard HOGLE
  • Publication number: 20090117274
    Abstract: Alkyl cyclopentadienyl precursors for use in ALD processes are disclosed. The present invention particularly relates to La alkyl cyclopentadienyl precursors, such as tris(isopropyl-cyclopentadienyl) Lanthanum.
    Type: Application
    Filed: October 30, 2008
    Publication date: May 7, 2009
    Inventors: Ce Ma, Kee-Chan Kim, Graham Anthony McFarlane
  • Patent number: 7514119
    Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
    Type: Grant
    Filed: April 10, 2006
    Date of Patent: April 7, 2009
    Assignee: Linde, Inc.
    Inventors: Ce Ma, Qing Min Wang, Patrick J. Helly, Richard Hogle
  • Publication number: 20090068086
    Abstract: Apparatus and methods for purifying WF6 gas by using carbonaceous materials are described. The apparatus and methods are particularly useful for removing high volatility impurities and for removing transition metal impurities, particularly chromium and molybdenum.
    Type: Application
    Filed: September 7, 2007
    Publication date: March 12, 2009
    Inventors: Richard Allen Hogle, Ce Ma, Dennis Precourt, Walter Hugh Whitlock
  • Publication number: 20070077778
    Abstract: Dielectric layers having a low dielectric constant are fabricated by using an asymmetric organocyclosiloxane as a precursor gas. The carbon content of the deposited layer is reduced to less than about 50 percent by use an oxidizing agent, a silicon containing compound, or a combination thereof.
    Type: Application
    Filed: October 4, 2005
    Publication date: April 5, 2007
    Inventors: Ce Ma, Qing Wang, Patrick Helly, Graham McFarlane
  • Publication number: 20060269667
    Abstract: A unique combination of solution stabilization and delivery technologies with special ALD operation is provided. A wide range of low volatility solid ALD precursors dissolved in solvents are used. Unstable solutes may be stabilized in solution and all of the solutions may be delivered at room temperature. After the solutions are vaporized, the vapor phase precursors and solvents are pulsed into a deposition chamber to assure true ALD film growth.
    Type: Application
    Filed: April 10, 2006
    Publication date: November 30, 2006
    Inventors: Ce Ma, Qing Wang, Patrick Helly, Richard Hogle
  • Publication number: 20060071213
    Abstract: The present invention relates generally to a method and means for growing strained or relaxed or graded silicon germanium (SiGe) layers on a semiconductor substrate using a selective epitaxial growth process. In particular, the present invention provides a method for epitaxially growing SiGe layers at temperatures lower than 600° C. by using halogermane and silane precursor materials.
    Type: Application
    Filed: October 4, 2004
    Publication date: April 6, 2006
    Inventors: Ce Ma, Qing Wang
  • Publication number: 20050250347
    Abstract: A method and apparatus for introducing a fluorine-containing flow stream to a deposition process to maintain process by-product volatility and reduce or eliminate by-product formation and/or interference.
    Type: Application
    Filed: December 21, 2004
    Publication date: November 10, 2005
    Inventors: Christopher Bailey, Richard Hogle, Simon Purdon, Revati Pradhan-Kasmalkar, Aaron Sullivan, Qing Wang, Ce Ma
  • Patent number: 6936537
    Abstract: The use of a polyhedral oligomeric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligomeric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.
    Type: Grant
    Filed: April 12, 2002
    Date of Patent: August 30, 2005
    Assignee: The BOC Group, Inc.
    Inventors: Richard A. Hogle, Patrick Joseph Helly, Ce Ma, Laura Joy Miller
  • Publication number: 20040187731
    Abstract: Improved acid copper electroplating bath compositions are disclosed. The improved bath solutions contain at least one of a carrier; a water-soluble, mercapto-containing organic brightener; and a leveler which comprises an organic compound containing single or multiply charged centers in acidic bath solution. These electroplating bath compositions are used to copper plate advanced interconnects on semiconductor devices.
    Type: Application
    Filed: April 14, 2004
    Publication date: September 30, 2004
    Inventors: Qing Min Wang, Weiji Huang, Miu Ling Lau, Carol Hsiuchin Liu, Ce Ma, Edward K. Chang, Wenpin Ho, Richard C. Paciej
  • Patent number: 6649540
    Abstract: Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surface and form a film which will have a dielectric constant, K, less than 2.5.
    Type: Grant
    Filed: November 2, 2001
    Date of Patent: November 18, 2003
    Assignee: The BOC Group, Inc.
    Inventors: Qing Min Wang, Ce Ma
  • Patent number: 6572923
    Abstract: Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2.0 to 2.5.
    Type: Grant
    Filed: January 9, 2002
    Date of Patent: June 3, 2003
    Assignee: The BOC Group, Inc.
    Inventors: Ce Ma, Qing Min Wang
  • Publication number: 20020192980
    Abstract: The use of a polyhedral oligometric silsesquioxane compound and linking agent to form an ultra low-k dielectric film on semiconductor or integrated circuit surfaces is disclosed. The reaction between the polyhedral oligometric silsesquioxane compound and linking agent is done in a chemical vapor deposition chamber.
    Type: Application
    Filed: April 12, 2002
    Publication date: December 19, 2002
    Inventors: Richard A. Hogle, Patrick Joseph Helly, Ce Ma, Laura Joy Miller
  • Publication number: 20020132408
    Abstract: Methods for synthesizing extra low-k CVD precursors and forming extra low-k dielectric films on the surfaces of semiconductors wafers and integrated circuits are disclosed. An asymmetric organocyclosiloxane compound is applied to the surface where it will react with and form a film that will have a dielectric constant, k, from 2.0 to 2.5.
    Type: Application
    Filed: January 9, 2002
    Publication date: September 19, 2002
    Inventors: Ce Ma, Qing Min Wang
  • Patent number: 6440876
    Abstract: Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated circuits are disclosed. A Si—O—C-in-ring cyclic siloxane precursor compound is applied to the surface by chemical vapor deposition where it will react with the surface and form a film having a dielectric constant, k, less than 2.5. The compound generally has the formula (—O—R1—O—)SiR2R3 or the formula (—R1—O—)SiR2R3.
    Type: Grant
    Filed: October 5, 2001
    Date of Patent: August 27, 2002
    Assignee: The BOC Group, Inc.
    Inventors: Qing Min Wang, Ce Ma
  • Publication number: 20020076944
    Abstract: Methods for depositing a low-k dielectric film on the surfaces of semiconductors and integrated surfaces are disclosed. A substituted organosilane compound precursor is applied to the surface by chemical vapor deposition where it will react with the surface and form a film which will have a dielectric constant, K, less than 2.5.
    Type: Application
    Filed: November 2, 2001
    Publication date: June 20, 2002
    Inventors: Qing Min Wang, Ce Ma