Patents by Inventor Cem Basceri

Cem Basceri has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS, DEVICES, AND SYSTEMS RELATED TO FORMING SEMICONDUCTOR POWER DEVICES WITH A HANDLE SUBSTRATE
    Publication number: 20170294511
    Abstract: Methods of manufacturing device assemblies, as well as associated semiconductor assemblies, devices, systems are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a semiconductor device assembly that includes a handle substrate, a semiconductor structure having a first side and a second side opposite the first side, and an intermediary material between the semiconductor structure and the handle substrate. The method also includes removing material from the semiconductor structure to form an opening extending from the first side of the semiconductor structure to at least the intermediary material at the second side of the semiconductor structure. The method further includes removing at least a portion of the intermediary material through the opening in the semiconductor structure to undercut the second side of the semiconductor structure.
    Type: Application
    Filed: June 19, 2017
    Publication date: October 12, 2017
    Inventors: Martin F. Schubert, Vladimir Odnoblyudov, Cem Basceri
  • Aluminum Nitride Based Silicon-On-Insulator Substrate Structure
    Publication number: 20170288055
    Abstract: A substrate structure includes a polycrystalline substrate, a plurality of thin film layers disposed on the polycrystalline substrate, a bonding layer coupled to at least a portion of the plurality of thin films, and a single crystal silicon layer joined to the bonding layer.
    Type: Application
    Filed: March 28, 2017
    Publication date: October 5, 2017
    Applicant: Quora Technology, Inc.
    Inventors: Ozgur Aktas, Vladimir Odnoblyudov, Dilip Risbud, Cem Basceri
  • Methods, devices, and systems related to forming semiconductor power devices with a handle substrate
    Patent number: 9768271
    Abstract: Methods of manufacturing device assemblies, as well as associated semiconductor assemblies, devices, systems are disclosed herein. In one embodiment, a method of forming a semiconductor device assembly includes forming a semiconductor device assembly that includes a handle substrate, a semiconductor structure having a first side and a second side opposite the first side, and an intermediary material between the semiconductor structure and the handle substrate. The method also includes removing material from the semiconductor structure to form an opening extending from the first side of the semiconductor structure to at least the intermediary material at the second side of the semiconductor structure. The method further includes removing at least a portion of the intermediary material through the opening in the semiconductor structure to undercut the second side of the semiconductor structure.
    Type: Grant
    Filed: February 22, 2013
    Date of Patent: September 19, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Martin F. Schubert, Vladimir Odnoblyudov, Cem Basceri
  • Wide Band Gap Device Integrated Circuit Architecture on Engineered Substrate
    Publication number: 20170170232
    Abstract: Disclosed herein are wide band gap integrated circuits, such as gallium nitride (GaN) integrated circuits, including a plurality of groups of epitaxial layers formed on an engineered substrate, and methods of making the WBG integrated circuits. The epitaxial layers have a coefficient of thermal expansion (CTE) substantially matching the CTE of the engineered substrate. Mesas, internal interconnects, and electrodes configure each group of epitaxial layers into a WBG device. External interconnects connect different WBG devices into a WBG integrated circuit. The CTE matching allows the formation of epitaxial layers with reduced dislocation density and an overall thickness of greater than 10 microns on a six-inch or larger engineered substrate. The large substrate size and thick WBG epitaxial layers allow a large number of high density WBG integrated circuits to be fabricated on a single substrate.
    Type: Application
    Filed: December 1, 2016
    Publication date: June 15, 2017
    Applicant: Quora Technology, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri
  • Lift Off Process for Chip Scale Package Solid State Devices on Engineered Substrate
    Publication number: 20170110314
    Abstract: A method of processing an engineered substrate structure includes providing an engineered substrate structure including a polycrystalline substrate and an engineered layer encapsulating the polycrystalline substrate, forming a sacrificial layer coupled to the engineered layer, joining a solid state device structure to the sacrificial layer, forming one or more channels in the solid state device structure by removing one or more portions of the solid state device structure to expose one or more portions of the sacrificial layer, flowing an etching chemical through the one or more channels to the one or more exposed portions of the sacrificial layer, and dissolving the sacrificial layer by interaction between the etching chemical and the sacrificial layer, thereby separating the engineered substrate structure from the solid state device structure.
    Type: Application
    Filed: October 7, 2016
    Publication date: April 20, 2017
    Applicant: Quora Technology, Inc.
    Inventors: Vladimir Odnoblyudov, Cem Basceri
  • LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING
    Publication number: 20170104126
    Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.
    Type: Application
    Filed: December 20, 2016
    Publication date: April 13, 2017
    Inventors: Cem Basceri, Thomas Gehrke, Charles M. Watkins
  • Solid state lighting dies with quantum emitters and associated methods of manufacturing
    Patent number: 9620670
    Abstract: Solid state lighting dies and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting die includes a substrate material, a first semiconductor material, a second semiconductor material, and an active region between the first and second semiconductor materials. The second semiconductor material has a surface facing away from the substrate material. The solid state lighting die also includes a plurality of openings extending from the surface of the second semiconductor material toward the substrate material.
    Type: Grant
    Filed: September 2, 2010
    Date of Patent: April 11, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Cem Basceri, Casey Kurth, Thomas Gehrke, Kevin Tetz
  • Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing
    Patent number: 9620675
    Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.
    Type: Grant
    Filed: January 25, 2016
    Date of Patent: April 11, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Cem Basceri, Thomas Gehrke
  • Devices, systems, and methods related to removing parasitic conduction in semiconductor devices
    Patent number: 9577058
    Abstract: Semiconductor devices and methods for making semiconductor devices are disclosed herein. A method configured in accordance with a particular embodiment includes forming a stack of semiconductor materials from an epitaxial substrate, where the stack of semiconductor materials defines a heterojunction, and where the stack of semiconductor materials and the epitaxial substrate further define a bulk region that includes a portion of the semiconductor stack adjacent the epitaxial substrate. The method further includes attaching the stack of semiconductor materials to a carrier, where the carrier is configured to provide a signal path to the heterojunction. The method also includes exposing the bulk region by removing the epitaxial substrate.
    Type: Grant
    Filed: July 10, 2015
    Date of Patent: February 21, 2017
    Assignee: Micron Technology, Inc.
    Inventors: Martin F. Schubert, Vladimir Odnoblyudov, Cem Basceri, Thomas Gehrke
  • Light emitting devices with built-in chromaticity conversion and methods of manufacturing
    Patent number: 9530927
    Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.
    Type: Grant
    Filed: October 2, 2015
    Date of Patent: December 27, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Cem Basceri, Thomas Gehrke, Charles M. Watkins
  • BACK-TO-BACK SOLID STATE LIGHTING DEVICES AND ASSOCIATED METHODS
    Publication number: 20160372451
    Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.
    Type: Application
    Filed: August 30, 2016
    Publication date: December 22, 2016
    Inventors: Cem Basceri, Casey Kurth, Kevin Tetz
  • CHIP-ON-BOARD DESIGN WITH COLOR MIXING
    Publication number: 20160273749
    Abstract: Some embodiments of the disclosure provide for a lighting system including a substrate. The lighting system includes several blue light emitting diodes (LEDs) supported by the substrate. The lighting system includes at least one red LED supported by the substrate. The lighting system includes a light conversion material covering the blue LEDs and the at least one red LED.
    Type: Application
    Filed: March 16, 2016
    Publication date: September 22, 2016
    Inventors: Vladimir ODNOBLYUDOV, Cem BASCERI, Phil CHEN
  • Back-to-back solid state lighting devices and associated methods
    Patent number: 9443834
    Abstract: Solid state lights (SSLs) including a back-to-back solid state emitters (SSEs) and associated methods are disclosed herein. In various embodiments, an SSL can include a carrier substrate having a first surface and a second surface different from the first surface. First and second through substrate interconnects (TSIs) can extend from the first surface of the carrier substrate to the second surface. The SSL can further include a first and a second SSE, each having a front side and a back side opposite the front side. The back side of the first SSE faces the first surface of the carrier substrate and the first SSE is electrically coupled to the first and second TSIs. The back side of the second SSE faces the second surface of the carrier substrate and the second SSE is electrically coupled to the first and second TSIs.
    Type: Grant
    Filed: September 2, 2010
    Date of Patent: September 13, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Cem Basceri, Casey Kurth, Kevin Tetz
  • SOLID STATE LIGHTING DEVICES WITH REDUCED CRYSTAL LATTICE DISLOCATIONS AND ASSOCIATED METHODS OF MANUFACTURING
    Publication number: 20160225948
    Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.
    Type: Application
    Filed: January 25, 2016
    Publication date: August 4, 2016
    Inventors: Cem Basceri, Thomas Gehrke
  • ENGINEERED SUBSTRATES FOR SEMICONDUCTOR DEVICES AND ASSOCIATED SYSTEMS AND METHODS
    Publication number: 20160155893
    Abstract: Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.
    Type: Application
    Filed: February 5, 2016
    Publication date: June 2, 2016
    Inventors: Martin F. Schubert, Cem Basceri, Vladimir Odnoblyudov, Casey Kurth, Thomas Gehrke
  • Engineered substrates for semiconductor devices and associated systems and methods
    Patent number: 9269858
    Abstract: Engineered substrates for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a transducer structure having a plurality of semiconductor materials including a radiation-emitting active region. The device further includes an engineered substrate having a first material and a second material, at least one of the first material and the second material having a coefficient of thermal expansion at least approximately matched to a coefficient of thermal expansion of at least one of the plurality of semiconductor materials. At least one of the first material and the second material is positioned to receive radiation from the active region and modify a characteristic of the light.
    Type: Grant
    Filed: August 31, 2011
    Date of Patent: February 23, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Martin F. Schubert, Cem Basceri, Vladimir Odnoblyudov, Casey Kurth, Thomas Gehrke
  • LED ARRAY PACKAGE
    Publication number: 20160035950
    Abstract: Various aspects of a light emitting apparatus includes a substrate. Various aspects of the light emitting apparatus include a light emitting die arranged on the substrate. The light emitting die includes one or more side walls. Various aspects of the light emitting apparatus include a reflective die attach material extending along the one or more side walls of the light emitting die.
    Type: Application
    Filed: July 31, 2014
    Publication date: February 4, 2016
    Inventors: Vladimir ODNOBLYUDOV, Scott WEST, Cem BASCERI, Zhengghng GAN
  • LIGHT EMITTING DEVICES WITH BUILT-IN CHROMATICITY CONVERSION AND METHODS OF MANUFACTURING
    Publication number: 20160027957
    Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.
    Type: Application
    Filed: October 2, 2015
    Publication date: January 28, 2016
    Inventors: Cem Basceri, Thomas Gehrke, Charles M. Watkins
  • Solid state lighting devices with reduced crystal lattice dislocations and associated methods of manufacturing
    Patent number: 9246051
    Abstract: Solid state lighting devices and associated methods of manufacturing are disclosed herein. In one embodiment, a solid state lighting device includes a substrate material having a substrate surface and a plurality of hemispherical grained silicon (“HSG”) structures on the substrate surface of the substrate material. The solid state lighting device also includes a semiconductor material on the substrate material, at least a portion of which is between the plurality of HSG structures.
    Type: Grant
    Filed: May 13, 2014
    Date of Patent: January 26, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Cem Basceri, Thomas Gehrke
  • Light emitting devices with built-in chromaticity conversion and methods of manufacturing
    Patent number: 9184336
    Abstract: Various embodiments of light emitting devices with built-in chromaticity conversion and associated methods of manufacturing are described herein. In one embodiment, a method for manufacturing a light emitting device includes forming a first semiconductor material, an active region, and a second semiconductor material on a substrate material in sequence, the active region being configured to produce a first emission. A conversion material is then formed on the second semiconductor material. The conversion material has a crystalline structure and is configured to produce a second emission. The method further includes adjusting a characteristic of the conversion material such that a combination of the first and second emission has a chromaticity at least approximating a target chromaticity of the light emitting device.
    Type: Grant
    Filed: September 17, 2014
    Date of Patent: November 10, 2015
    Assignee: Micron Technology, Inc.
    Inventors: Cem Basceri, Thomas Gehrke, Charles M. Watkins