Abstract: Pulse-width-modulating class D amplifier with an H-bridge output stage, and method of operating the same. in which output stage dead-time is compensated. Offset logic circuitry detects various dead-time-related conditions at push-pull output drivers, and generates an offset signal applied to the amplified differential input signal, to adjust the time at which the voltage at differential signal lines crosses a ramp reference waveform. The offset signal can correspond to the duration of a disturbance (dead-time at one driver in combination with an active signal at the active driver), or the sum of that disturbance duration with a dead-time at the active driver. The offset signal is generated by charging a capacitor for the duration of this disturbance, or disturbance plus dead-time. According to another approach, error is reduced by charging a capacitor for each transition of the signal for a duration of the dead-time of the active driver.

Abstract: Pulse-width-modulating class D amplifier with an H-bridge output stage, and method of operating the same. in which output stage dead-time is compensated. Offset logic circuitry detects various dead-time-related conditions at push-pull output drivers, and generates an offset signal applied to the amplified differential input signal, to adjust the time at which the voltage at differential signal lines crosses a ramp reference waveform. The offset signal can correspond to the duration of a disturbance (dead-time at one driver in combination with an active signal at the active driver), or the sum of that disturbance duration with a dead-time at the active driver. The offset signal is generated by charging a capacitor for the duration of this disturbance, or disturbance plus dead-time. According to another approach, error is reduced by charging a capacitor for each transition of the signal for a duration of the dead-time of the active driver.

Abstract: Two transistors of a class D output stage are driven by complementary, variable duty cycle signals PWM+ and PWM?. When the pulse width of the PWM+ signal becomes too narrow for reliable operation of prior art over-current protection circuits sensing the drain to source voltage of FET1 driven by PWM+, a Narrow Pulse Detector generates a signal indicative of this narrow pulse condition. A Negative Current Sense circuit measures the drain to source voltage across FET2 during the much longer conduction time of FET2 driven by PWM?. Because of the energy stored in the series inductor coupled to the output of the class D stage, a negative current flows through this FET2 during its conduction time. The resulting drain to source voltage of FET2 is measured and compared to a threshold. If the voltage indicative of current is over the threshold, and the Narrow Pulse Detector output indicates a narrow pulse condition, then an inhibit signal is generated which reduces current.

Abstract: Methods and apparatus to reduce voltage bounces and spike voltages in switching amplifiers are disclosed. An example apparatus to reduce spike voltages in a switching amplifier disclosed herein comprises an input to sense an output voltage of the switching amplifier, and a pull-down circuit to electrically couple the apparatus with a transistor in the switching amplifier, wherein the pull-down circuit is configured to vary in strength based on the output voltage sensed by the input.

Abstract: A circuit and method for determining overcurrent in a FET detects an output voltage of the FET in both a positive and negative polarity. The related positive or negative currents through the FET can be measured to determine whether an overcurrent condition exists. By measuring positive and negative currents in the FET, the overcurrent detector can obtain twice as much information as when measuring a positive current alone, and can respond more readily to overcurrent conditions. The overcurrent detector avoids the constraints typically observed in cycle-by-cycle PWM control with single polarity Vds sensing, while permitting a relaxation in the timing requirements for current sensing. A spike suppression circuit also contributes to longer sensing intervals.

Abstract: Two transistors of a class D output stage are driven by complementary, variable duty cycle signals PWM+ and PWM?. When the pulse width of the PWM+ signal becomes too narrow for reliable operation of prior art over-current protection circuits sensing the drain to source voltage of FET1 driven by PWM+, a Narrow Pulse Detector generates a signal indicative of this narrow pulse condition. A Negative Current Sense circuit measures the drain to source voltage across FET2 during the much longer conduction time of FET2 driven by PWM?. Because of the energy stored in the series inductor coupled to the output of the class D stage, a negative current flows through this FET2 during its conduction time. The resulting drain to source voltage of FET2 is measured and compared to a threshold. If the voltage indicative of current is over the threshold, and the Narrow Pulse Detector output indicates a narrow pulse condition, then an inhibit signal is generated which reduces current.

Abstract: Methods and apparatus to reduce voltage bounces and spike voltages in switching amplifiers are disclosed. An example method of removing a substrate current from a substrate disclosed herein comprises injecting the substrate current via turning on an active device, forming a low impedance path to ground via a substrate clamp based on the substrate current, and removing the substrate current from the substrate via the substrate clamp.

Abstract: Methods and apparatus to reduce voltage bounces and spike voltages in switching amplifiers are disclosed. An example apparatus to reduce spike voltages in a switching amplifier disclosed herein comprises an input to sense an output voltage of the switching amplifier, and a pull-down circuit to electrically couple the apparatus with a transistor in the switching amplifier, wherein the pull-down circuit is configured to vary in strength based on the output voltage sensed by the input.

Abstract: A system and method is provided for driving an output transistor. The system and method employ a sense control to adjust a drive strength associated with driving the output transistor. The sense control measures an output parameter of the transistor, and adjusts the drive strength based on the measured parameter. The drive strength can be based on a selected driver of a plurality of driver devices with varying drive strengths or selected output devices of a driver of a plurality of output devices of varying drive strengths. The drive strength of the driver devices or output devices can be varied by varying the channel widths of output drive devices selectively coupled to a drive terminal (e.g., gate, base) of the output transistor.

Abstract: Hardware and/or software countermeasures are provided to reduce or eliminate vulnerabilities due to the observable and/or predictable states and state transitions of microprocessor components such as instruction cache, data cache, branch prediction unit(s), branch target buffer(s) and other components. For example, for branch prediction units, various hardware and/or software countermeasures are provided to reduce vulnerabilities in the branch prediction unit (BPU) and to protect against the security vulnerabilities due the observable and/or predictable states and state transitions during BPU operations.

Abstract: A system and method is provided for detecting an over-current condition in a power field-effect transistor (FET). In one embodiment, an over-current detection circuit for detecting an over-current condition in a power FET comprises a current generator circuit operative to generate a reference current and a plurality of matched FETs operative to receive the reference current and provide a reference voltage, the matched FETs being matched to each other and to the power FET. The over-current detection circuit also comprises a comparator operative to measure a drain-to-source voltage of the power FET and to provide an output that indicates that the drain-to-source voltage of the power FET has exceeded the reference voltage.

Abstract: The invention comprises a method of forming an integrated circuit, the method comprising: (1) forming a first dielectric layer disposed outwardly from a semiconductor substrate; (2) forming a first intermediate structure outwardly from the a dielectric layer, the first intermediate structure comprising a floating gate layer disposed outwardly from the first dielectric layer, a second dielectric layer disposed outwardly from the floating gate layer, and a first polysilicon layer disposed outwardly from the second dielectric layer; (3) removing regions of the first intermediate structure to form at least one gate stack disposed outwardly from the first dielectric layer; and (4) forming at least one dielectric isolation region after the formation of the gate stacks, wherein the at least one dielectric isolation region is disposed between two gate stacks.

Abstract: A circuit and method for determining overcurrent in a FET detects an output voltage of the FET in both a positive and negative polarity. The related positive or negative currents through the FET can be measured to determine whether an overcurrent condition exists. By measuring positive and negative currents in the FET, the overcurrent detector can obtain twice as much information as when measuring a positive current alone, and can respond more readily to overcurrent conditions. The overcurrent detector avoids the constraints typically observed in cycle-by-cycle PWM control with single polarity Vds sensing, while permitting a relaxation in the timing requirements for current sensing. A spike suppression circuit also contributes to longer sensing intervals.

Abstract: An apparatus is for detecting body diode conduction in a semiconductor device that includes first regions fixed with a substrate having an upper surface to establish a source, gate and drain with drain-to-source current flow parallel with the surface. The first regions experience body diode conduction in a first inter-region current flow among first involved regions. The apparatus includes: second regions fixed with the substrate and substantially similar in relative size and placement with respect to other second regions as a corresponding first region is in relative size and placement with respect to other first regions. The second regions experience model body diode conduction in a second inter-region current flow among second involved regions. The model body diode conduction occurs generally contemporaneously with the body diode conduction. Selected second regions are coupled with selected first regions to establish a connection locus to permit detecting the model body diode conduction.

Abstract: An amplifier system and method is provided for performing gate oxide integrity (GOI) testing of a power output field effect transistor (FET) of the amplifier system. The amplifier system and method provide for integrated test circuitry that protect drive components during overvoltage stress of a gate of the power output FET, and disables and/or isolates drive devices associated with leakage paths from the gate during gate oxide leakage measurements.

Abstract: A system and method is provided for detecting an over-current condition in a power field-effect transistor (FET). In one embodiment, an over-current detection circuit for detecting an over-current condition in a power FET comprises a current generator circuit operative to generate a reference current and a plurality of matched FETs operative to receive the reference current and provide a reference voltage, the matched FETs being matched to each other and to the power FET. The over-current detection circuit also comprises a comparator operative to measure a drain-to-source voltage of the power FET and to provide an output that indicates that the drain-to-source voltage of the power FET has exceeded the reference voltage.

Abstract: A system and method is provided for driving an output transistor. The system and method employ a sense control to adjust a drive strength associated with driving the output transistor. The sense control measures an output parameter of the transistor, and adjusts the drive strength based on the measured parameter. The drive strength can be based on a selected driver of a plurality of driver devices with varying drive strengths or selected output devices of a driver of a plurality of output devices of varying drive strengths. The drive strength of the driver devices or output devices can be varied by varying the channel widths of output drive devices selectively coupled to a drive terminal (e.g., gate, base) of the output transistor.

Abstract: An amplifier system and method is provided for performing gate oxide integrity (GOI) testing of a power output field effect transistor (FET) of the amplifier system. The amplifier system and method provide for integrated test circuitry that protect drive components during overvoltage stress of a gate of the power output FET, and disables and/or isolates drive devices associated with leakage paths from the gate during gate oxide leakage measurements.

Abstract: An apparatus is for detecting body diode conduction in a semiconductor device that includes first regions fixed with a substrate having an upper surface to establish a source, gate and drain with drain-to-source current flow parallel with the surface. The first regions experience body diode conduction in a first inter-region current flow among first involved regions. The apparatus includes: second regions fixed with the substrate and substantially similar in relative size and placement with respect to other second regions as a corresponding first region is in relative size and placement with respect to other first regions. The second regions experience model body diode conduction in a second inter-region current flow among second involved regions. The model body diode conduction occurs generally contemporaneously with the body diode conduction. Selected second regions are coupled with selected first regions to establish a connection locus to permit detecting the model body diode conduction.

Abstract: A forward biased diode 40 is used to charge up a photodiode 26 rather than an NMOS transistor. This photodiode charging mechanism increases the dynamic range and optical response of active pixel arrays, and improves the scalability of the pixel element.