Abstract: Disclosed is a method of forming an oxynitride film. The method comprises the steps of loading a silicon substrate into an oxidization furnace, implanting an oxygen based source gas into the oxidization furnace to grow a pure silicon oxide film on the silicon substrate, blocking implantation of the oxygen based source gas and implanting an inert gas to exhaust the oxygen based source gas remaining within the oxidization furnace, raising a temperature within the oxidization furnace to a nitrification process temperature, stabilizing the temperature within the oxidization furnace, implementing a nitrification process for the pure silicon oxide film by implanting a nitrogen based source gas, and stopping implantation of the nitrogen based source gas and rapidly cooling the oxidization furnace while implanting the inert gas into the oxidization furnace.

Abstract: The present invention relates to a method of manufacturing a flash memory cell. A tunnel oxide film is formed before a trench is formed and an exposed portion is then etched by a given thickness. Therefore, a phenomenon that the corner of the trench is thinly formed by a sidewall oxidization process is prevented and an active region of a desired critical dimension can be secured.

Abstract: Disclosed is a method of manufacturing a semiconductor device. A floating gate is formed and a nitrification process is then implemented. It is thus possible to improve the roughness of the top surface of the floating gate electrode. Furthermore, a nitrification process and a dielectric film formation process are implemented in-situ. It is possible to simplify the process.

Abstract: Disclosed is a method of forming an isolation film in semiconductor devices using a shallow trench. Trenches are formed in silicon substrates of a memory cell region and a peripheral circuit region. The inert ion is then injected into the surface of the trench in the peripheral circuit region, thus forming an amorphous layer. Thereafter, an oxidization process is implemented so that a thick oxide film is grown due to excessive oxidization at the amorphous layer, thus making thicker the trench in the peripheral circuit region than the trench in the memory cell region by a thickness of the oxide film.

Abstract: A method of forming an isolation layer in the semiconductor devices is disclosed. The present invention comprises forming the isolating film by means of a method in which a method of forming a V type trench at the isolation region, implanting ions capable of accelerating oxidization action into the center portion of the V type trench, implementing an oxidization process to form an insulating film consisting of an oxide film at the isolation region, and then completely burying the trench with an insulating material, using the LOCOS method, and a method of forming a trench type isolation layer, are applied together. Therefore, as the top corner of the trench is formed with inclination, concentration of the electric field and formation of a moat can be simultaneously prevented.

Abstract: Disclosed is a method for manufacturing a thin film transistor of a semiconductor device, wherein an offset area is influenced by a gate voltage to increase the ON-current, which provides a thin film transistor which improves the ON/OFF characteristic of the semiconductor device. The low swing value and the high ON/OFF ratio are implemented by forming a gate insulation layer of ONO structure on the gate electrode on the semiconductor device and then performing a steam anneal process using a wet-oxidizing method to reinforce the surface the respective ONO layer. Thus, the thickness of a gate insulation layer is reduced, the margin of the device is secured, and the electrical characteristic becomes superior.

Abstract: A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder.

Abstract: The present invention relates to a method of forming a gate electrode in a semiconductor device. Upon deposition processes for forming doped and undoped polysilicon films constituting a gate electrode, the deposition processes are performed at different temperatures. Thus, generation of an alien substance on the surface of the doped polysilicon film can be prohibited. As a result, the gate electrode having no defect can be implemented.

Abstract: The present invention relates to a method of manufacturing a flash memory cell. A tunnel oxide film is formed before a trench is formed and an exposed portion is then etched by a given thickness. Therefore, a phenomenon that the corner of the trench is thinly formed by a sidewall oxidization process is prevented and an active region of a desired critical dimension can be secured.

Abstract: The present invention relates to a flash memory cell and method of manufacturing the same. The flash memory cell comprises a trench for defining a semiconductor substrate to be an active region and an inactive region, a trench insulating film burying the trench and having a given protrusion, an impurity region formed in the active region, a floating gate isolated by the protrusion and having rugged portions, and a dielectric film and a control gate formed on the floating gate. Therefore, the present invention can significantly simplify the process, improve the yield of a product and reduce the manufacturing cost.

Abstract: The present invention relates to a method of manufacturing a flash memory cell capable of preventing an oxidation of a dielectric film between a floating gate and a control gate, in a manner that a polysilicon film for floating gate is deposited, nitrogen ions are injected to make amorphous and contaminate the surface of the polysilicon film.

Abstract: Disclosed is a method for manufacturing a thin film transistor of a semiconductor device, wherein an offset area is influenced by a gate voltage to increase the ON-current, which provides a thin film transistor which improves the ON/OFF characteristic of the semiconductor device. The low swing value and the high ON/OFF ratio are implemented by forming a gate insulation layer of ONO structure on the gate electrode on the semiconductor device and then performing a steam anneal process using a wet-oxidizing method to reinforce the surface the respective ONO layer. Thus, the thickness of a gate insulation layer is reduced, the margin of the device is secured, and the electrical characteristic becomes superior.

Abstract: The present invention forms a protection layer of doped amorphous silicon or amorphous silicon on a semiconductor substrate in which a control gate is formed in a stack structure of doped poly Si and etches only a given portion of the protection layer in a subsequent process to form a contact hole. Therefore, the present invention can prevent oxidization of a given portion of WSix due to exposed WSix.

Abstract: The present invention relates a method of manufacturing a flash memory device. In case of forming a dielectric film consisting of a lower oxide film, a nitride film and upper oxide film that is formed between a floating gate and a control gate, a nitrification process is performed after the lower oxide film is formed, thus forming a nitrogen layer below the lower oxide film. Then, an annealing process using an oxygen gas is performed to move the nitrogen layer onto the surface of the lower oxide film, thus forming a nitride film. Therefore, the present invention can reduce the effective thickness of the dielectric film.

Abstract: The present invention relates to a method of manufacturing a flash memory cell. The present invention forms a spacer at the sidewall of a floating gate pattern to increase the surface area of the floating gate, thus increasing a dielectric film. Therefore, the present invention can increase a gate coupling ratio. Also, the present invention can reduce the distance between the floating gates to prohibit a seam phenomenon generated upon deposition of a tungsten silicide film, thus reducing a word line resistance.

Abstract: The present invention forms a protection layer of doped amorphous silicon or amorphous silicon on a semiconductor substrate in which a control gate is formed in a stack structure of doped poly Si and etches only a given portion of the protection layer in a subsequent process to form a contact hole. Therefore, the present invention can prevent oxidization of a given portion of WSix due to exposed WSix.

Abstract: A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder.

Abstract: A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder.

Abstract: A cylindrical storage electrode in a semiconductor device is manufactured by forming a contact hole in a poly oxide film and by forming a first thin film on the film and in the hole. Next, a core oxide film and an anti-reflective coating film are formed on the first thin film to determine the height of the cylinder. A pattern is then formed by etching the anti-reflective coating film, core oxide film and the first thin film such that the poly oxide film is exposed. A second thin film is formed on the overall resultant structure, and a tungsten silicide layer is formed on the second thin film. Inner and outer walls of the cylinder are then formed by blanket-etching the tungsten silicide film and the second thin film such that the core oxide film is exposed. After the core oxide film is removed, a selective metastable polysilicon (SMPS) process is performed so that different grain growths are generated at the inner and outer walls of the cylinder. A storage electrode is then formed by annealing the cylinder.